Shenzhen SI Semiconductors Co., LTD.

Product Specification

BUL LOW VOLTAGE SERIES TRANSISTORS BUL6803L

FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA

APPLICATION: SUITABLE FOR 110V CIRCUIT MODE FLUORESCENT LAMP

ELECTRONIC BALLAST ELECTRONIC TRANSFORMER

Absolute Maximum Ratings Tc=25°C TO-220

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter- Base Voltage VEBO 9 V
Collector Current IC 3.5 A
Total Power Dissipation PC 50 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65-150 °C

Electronic Characteristics Tc=25°C

CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT
Collector-Base Cutoff Current ICBO VCB=400V 100 A
Collector-Emitter Cutoff Current ICEO VCE=200V,IB=0 250 A
Collector-Emitter Voltage VCEO IC=10mA,IB=0 200 V
Emitter -Base Voltage VEBO IE=1mA,IC=0 9 V
IC=1.0A,IB=0.2A 0.5
Collector-Emitter Saturation Voltage Vcesat V
IC=2.0A,IB=0.4A 1.0
Base-Emitter Saturation Voltage Vbes IC=1A,IB=0.2A 1.5 V
VCE=5V,IC=1mA 7
hFE
DC Current Gain VCE=5V,IC=1A 10 40
VCE=5V,IC=3.5A 5
VCC=5V,
Storage Time tS IC=0.25A 1.5 4 us
(UI9600)

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 Shenzhen SI Semiconductors Co., LTD. Product Specification

BUL LOW VOLTAGE SERIES TRANSISTORS BUL6803L

SOA (DC) Pc Tj
Ic(A) %
10 120

100

1 80
IS/B

60
Ptot

0.1 40

20

0.01 Vce(V) 0
1 10 100 1000 Tj( )
0 50 100 150 200

hFE
hFE - Ic hFE
hFE - Ic
100.00 100.00

Tj=125 Tj=125

Tj=25 Tj=25

Tj=− 40 Tj=− 40
10.00 10.00

Vce=1.5V Vce=5V

1.00 Ic(A) 1.00 Ic(A)

0.00 0.01 0.10 1.00 10.00 0.00 0.01 0.10 1.00 10.00

Vces(v) Vces - Ic Vbes(v)

Vbes - Ic
100.00 2.00
hFE=5 1.80 hFE=5

1.60
10.00 Tj=125
1.40
1.20
1.00 1.00 Tj=− 40
0.80
Tj=− 40 Tj=25
0.60
0.10 Tj=25
Tj=125
0.40
0.20
0.01 Ic(A) 0.00 Ic(A)
0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00

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Shenzhen SI Semiconductors Co., LTD. Product Specification

TO-220 MECHANICAL DATA

UNIT mm
SYMBOL min nom max SYMBOL min nom max
A 3.5 4.8 e 2.54
B 2.4 F 1.1 1.4
B1 1.8 L 12.5 14.5
b 0.6 L1 3.5
b1 1.2 L2 6.3
c 0.4 P
D 16.5 Q 2.5 3.1
D1 5.9 6.9 Q1 2.0 2.8
E 10.7 Z 3.0

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