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Basic Semiconductor Diode Questions

1. Depletion layer is caused by


A. Doping
B. Recombination
C. Barrier potential
D. Ions

2. The reverse current in a diode is usually


A. Very small
B. Very large
C. Zero
D. In the breakdown region

3. Avalanche in Diode occurs at


A. Barrier potential
B. Depletion layer
C. Knee voltage
D. Breakdown voltage

4. The potential barrier of a silicon diode is


A. 0.3 V
B. 0.7 V
C. 1 V
D. 5V

5. The reverse saturation current in a Silicon Diode is _____ than that of Germanium Diode
A. Equal
B. Higher
C. Lower
D. Depends on temperature

6. A Diode is a
A. Bilateral Device
B. Nonlinear Device
C. Linear Device
D. Unipolar Device

7. The diode current is large for which condition


A. Forward Bias
B. Inverse Bias
C. Poor Bias
D. Reverse Bias

8. The output voltage signal of a bridge rectifier is


A. Half-wave
B. Full-wave
C. Bridge-rectified signal
D. Sine wave

9. If the maximum DC current rating of diodes in Bridge Rectifier is 1A, what is the maximum DC
load current?
A. 1A
B. 2A
C. 4A
D. 8A

10. Voltage multipliers produce


A. Low voltage and low current
B. Low voltage and high current
C. High voltage and low current
D. High voltage and high current

11. Since diodes allow flow of current in only one direction, they can be used for
A. Current Limiting
B. Reverse Polarity Protection
C. Storing Charge
D. Voltage Regulation

12. When you test a good diode with a multimeter, it shows


A. Low resistance when forward biased or reverse biased
B. High resistance when forward biased or reverse biased
C. High resistance when forward biased and Low resistance when reverse biased
D. Low resistance when forward biased and High resistance when reverse biased

13. When does current flow in a PN junction?


A. When both p-type and n-type elements are at same potential
B. When there is no potential at either p-type or n-type elements
C. When p-type element is at more positive potential than n-type
D. When n-type element is at more positive potential than n-type

14. Units of measurement for forward bias and reverse current of a diode are
A. µA and µA
B. mA and µA
C. µA and mA
D. mA and mA

15. What graphical method is used for modelling Diode Characteristics


A. Exponential Method
B. Small Signal Approximation
C. Iteration Method
D. Constant Voltage Drop Method

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