The document discusses λ-based design rules for VLSI layout. It states that feature size f is defined as the distance between the source and drain of a transistor, and improves by 30% every 3 years. Rules are expressed in terms of λ, which is defined as f/2. The rules specify the minimum widths and spacings for diffusion, metal, contacts, and polysilicon to avoid breaks, shorts, and ensure overlaps between layers. For example, metal and diffusion have minimum width and spacing of 4λ, while contacts are 2λ × 2λ and surrounded by 1λ on adjacent layers. Polysilicon overlaps diffusion by 2λ for transistors and has 1λ spacing where no transistor is needed.
The document discusses λ-based design rules for VLSI layout. It states that feature size f is defined as the distance between the source and drain of a transistor, and improves by 30% every 3 years. Rules are expressed in terms of λ, which is defined as f/2. The rules specify the minimum widths and spacings for diffusion, metal, contacts, and polysilicon to avoid breaks, shorts, and ensure overlaps between layers. For example, metal and diffusion have minimum width and spacing of 4λ, while contacts are 2λ × 2λ and surrounded by 1λ on adjacent layers. Polysilicon overlaps diffusion by 2λ for transistors and has 1λ spacing where no transistor is needed.
The document discusses λ-based design rules for VLSI layout. It states that feature size f is defined as the distance between the source and drain of a transistor, and improves by 30% every 3 years. Rules are expressed in terms of λ, which is defined as f/2. The rules specify the minimum widths and spacings for diffusion, metal, contacts, and polysilicon to avoid breaks, shorts, and ensure overlaps between layers. For example, metal and diffusion have minimum width and spacing of 4λ, while contacts are 2λ × 2λ and surrounded by 1λ on adjacent layers. Polysilicon overlaps diffusion by 2λ for transistors and has 1λ spacing where no transistor is needed.
Feature size f = distance between source and drain Set by minimum width of polysilicon Feature size improves 30% every 3 years or so Normalize for feature size when describing design rules Express rules in terms of λ = f/2 E.g. λ = 0.3 µm in 0.6 µm process The rules describe Minimum width to avoid breaks in a line, Minimum spacing to avoid shorts between lines, Minimum overlap to ensure that two layers completely overlap.
281 19EC504: VLSI Design (AKB)
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Lambda(λ)- based Rules
282 19EC504: VLSI Design (AKB)
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19EC504: VLSI Design
Anil Kumar Bhat 1 10/18/2021
Lambda(λ)- based Rules
283 19EC504: VLSI Design (AKB)
283
Lambda(λ)- based Rules
Metal and diffusion have minimum width and spacing of 4λ Contacts are 2λ × 2λ and must be surrounded by 1λ on the layers above and below. Polysilicon uses a width of 2λ. Polysilicon overlaps diffusion by 2λ where a transistor is desired and has a spacing of 1λ away where no transistor is desired. Polysilicon and contacts have a spacing of 3λ from other polysilicon or contacts. N-well surrounds pMOS transistors by 6λ and avoids nMOS transistors by 6λ
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