E is in eV.

wavelength will be in Angstrom

Ge = Eg=0.785
Si=Eg=1.21

band gap energy is a function of inter-atomic

spacing. therefore Eg depends on temperature.
charge carriers for
conduction of
current can be
controlled

drift current=movement of charges due to the influence of an electric field.

diffusion current = due to uniform concentration gradient.
v=u+at = 0 + at ; a= v/t
ma = Eq ; a = Eq/m

v/t = Eq/m ---- v = (q/mt) E = UE

J = nqv = p v

p = nq = charge density
 ~x5
~x3
~x3.6
~x3
~x3.6
Resistivity of
metal wrt
temperature
n0>>p0
-ve sign indicates direction of current is from higher density
to lower density.
Diode under open circuit condition
Ohmic contact: Resistance independent of direction of current or charge flow
Rectifying contact: Resistance dependent on direction of current (like pn-junction)
Synthesis of junction diode
charge per unit area
Transistor:
Emitter-base junction - step-graded
Base-collector junction - linear-graded

See Sec. 3.8

(storage excess
majority or
minority carriers)
Due to recombination of free minority carrier with ions (donor/acceptor) - at the junction - that are deficient with charge (charge polarity of
minority). Say, electrons which is minority in p-side is pushed towards junction - upon reverse biasing - and recombine with +ve ions on p-
side depletion layer. Similarly, it is for the case of holes (in n-side). Thus, minority carrier density at junction is reduced to zero.
As magnitude of voltage from external supply is increased, the voltage across the zener diode remains constant. Whereby, the total current flowing through the circuit - through the
zener diode given by I = (V - Vz)/R - is increased. To dissipate heat - developed over the volume of zener diode - power-dissipation capacity of zener diode is required to be
properly designed. On the other arm of load resistor, total circuit current is divided across the terminal node connecting resistor and zener diode (in parallel), i.e., sum of separate
currents across diode and resistor is equal to total circuit current. With the increase in total current (due to increase in voltage supply from external source), current across zener
diode is increase, thereby, current through resistor is remained constant, i.e., voltage across resistor (Vr = Ir * RL) is constant.
Forward biased?
Significance of load line
Ripple Voltage
 ~90-99.95%

Active region biasing (transistor)

I_c = alpha*I_E - I_co, and I_co is characterised by V_cb
i.e. I_c = I_c(I_E, V_cb)
Base-emitter and collector-base are all
reversed biased, i.e., no emitter current
and hence, no base current as well as
no collector current
 not independent of Rc

As Rc increases, voltage drop across Rc increases and thus, voltage

dropped across transistor is reduced fr a given collector voltage supply.

IE= IE = (1/beta)IC + IC = ((1 + beta)/beta)IC

In cut-off mode of operation, base-emitter and collector-base are all reversed biased, i.e., no emitter current
and hence, no base current as well as no collector current
Metal-semiconductor Contact
Thevenin’s Theorem
Norton’s Theorem
between E and E+dE

electron
distribution
is uniform
Checked and verified
psi = 0, for x=0 (Boundary Condition)
=0, for x=L (Boundary Condition)

p = h_cut*k = h_cut*n*pi/L = (h/2pi)*n*pi/L = nh/(2L)

w = ((h_cut^2)/(2*m))(pi^2*n*2/L^2) = (n^2*h^2/(8*m*L^2))