Professional Documents
Culture Documents
(multi-step substrate
processes)
Evaporate metal film
contacts substrate
film
substrate
Direct writing with narrow beam
Electron projection lithography using a mask
:EPL
Issues:
o
projection method
oBack-scattering and second electron result in
and expensive
Raster Scan
The e-beam is swept across
the entire surface, pixel by
pixel
Beam is turned on and off
Beam is scanned across the
entire surface
Vector Scan
◦ The e-beam “jumps” from
one patterned area to the
next
◦ Adjustments to the beam
can also be made relatively
easily
◦ It takes longer for the
beam to settle, making it
more difficult to
◦ maintain accurate placing
for the beam
15
o Diffraction is not a limitation on resolution ( < 1 Å for
10-50 keV electrons)
o Resolution depends on electron scattering and beam
optics the size of the beam, can reach ~ 5 nm
In EBL the resolution is not
limited by diffraction
In EBL backscattering
causes the electron beam
to broaden and expose a
large volume of resist then
expected.
The proximity effect places
a limit on the minimum
spacing between pattern
feature.
17
• The pattern is written directly onto the
electron-sensitive resist (no mask is used)
• More precise than photolithography or X-
Ray lithography
• Used to make high-resolution masks for
photolithography and X-Ray lithography
• Beats the diffraction limit of light,
minimum feature size around 5 nm
Very slow. Takes over 10 hours to scan
across the entire surface of a wafer
• Very costly. One e-beam system costs
upwards of 5 to 10 MILLION dollars
• Potential problems with electron
scattering:
–Electron energy: 100eV -> very slow,
inefficient, damage the substrate
–Electron energy: 10eV -> lower
penetration depth and lower resolution
S.M. Sze, Semiconductor Devices, Physics and
Technology, Willey, 2002.
C.Y. Chang and S.M. Sze, Eds., ULSI
Technology, McGraw-Hill, 1996.
S.M. Sze, Ed., VLSI Technology, McGraw-Hill,
1988.
Nguyễn Đức Chiến, Nguyễn Văn Hiếu, Công
nghệ chế tạo mạch vi điện tử, NXB Bách khoa,
2007.