The morphological effect on electronic and

electrical properties of ZnO nanostructure

Cite as: AIP Conference Proceedings 2142, 140032 (2019); https://doi.org/10.1063/1.5122545
Published Online: 29 August 2019

Manoj Kumar, and Vijay Kumar Lamba

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AIP Conference Proceedings 2142, 140032 (2019); https://doi.org/10.1063/1.5122545 2142, 140032

© 2019 Author(s).
 The Morphological Effect on Electronic and Electrical
Properties of ZnO Nanostructure
Manoj Kumar1a, Vijay Kumar Lamba2
1
BRCM College of Engineering and Technology, Bahal, Bhiwani, Haryana (India)
2
Global College of Engineering & Technology, Kahanpur Khui, Punjab (India)

a)
manoj10276@gmail.com

Abstract. The morphological effects on electronic and electrical properties of ZnO nanostructure chemical bath
deposition have been studied. The tin oxide substrate doped with Indium, on which ZnO nanostructures were evaporated
were observed. These nanostructures were prepared in a growth solution and positioned in three distinct directions. From
three distinct positioned ZnO nanostructures, three samples were taken and examined. The synthesized nanostructures
and their morphological properties were studied. It was found that surface morphology was affected by the substrate
positioned in growth solution. The electronic and electrical properties were calculated. It was observed that the
morphological nanostructures affect the electronic and electrical properties of Schottky diode like barrier height, series
resistance, rectification ratios and reverse saturation current. While comparing current transport mechanism, it was
originated that the space charge limiting current was the dominant as compared to the higher forward bias mechanism in
all samples.

INTRODUCTION
Due to the excessive performance in photonics, optics and electronics, the ZnO materials have originated a broad
attention. The major applications of ZnO thin films such as catalysts, transducers and sensors have made a mind of
scientists to do its synthesis. With the advancement in nanotechnology, the study of materials in nanoengineering,
nanoscience and nanotechnology was required [1]. The electronic and electrical properties resulted from quantum
confinement effects was required to be studied with the reduction in size of the materials. The ZnO is an interesting
and important material that has found a place in semiconductor electronics [2]. The originated study tells that the
barrier heights are lower than the values of Schottky diode and it was also found that the barrier height do not vary
with the differences in work functions [3]. Wurtzite structure ZnO is having large binding energy (60meV) and a
direct and large band gap (3.37eV) at room temperature.
These properties have made ZnO material as the most important materials in terminology of electrical
conductivity [4-5]. The various morphological structures of ZnO nanostructures were integrated and used in various
approaches [6]. The morphology including size, orientation, density and shape of ZnO nanostructure begin to have
an urgent measurement in the execution of the device. The study of Liang et al reveals that a basic part in
photovoltaic solar cell uses the morphology of ZnO material [7-9]. We have studied the morphological effect on the
electronic, electrical strengths of ZnO nanostructured schottky diodes. The ZnO structure was mixed by the use of
Chemical Bath Deposition (CBD) technique without using emulsifier (wetting agent). The position of the substrate
was changed in the growth solution and three morphological structures were found.

Advances in Basic Science (ICABS 2019)

AIP Conf. Proc. 2142, 140032-1–140032-5; https://doi.org/10.1063/1.5122545
Published by AIP Publishing. 978-0-7354-1885-1/$30.00

140032-1
 DESIGNING OF ZnO NANOSTRUCTURE

Indium doped Tin oxide substrate using chemical bath deposition (CBD) technique was used to synthesize the
ZnO structures. The substrate was cleaned for five minutes each with de-ionized water, acetone and ethanol, the
substrate is dried using N2 gas. Three different morphologies for different positions of substrate in the growth
solution are showed:
1. Nanorods placed parallel to the substrate
2. Hexagonal nanorods, vertically arranged, faced in upward direction
3. Hexagonal nanorods, vertically arranged, faced in downward direction in a beaker.
Nanostructure growth was seen in these three positions and samples were taken as shown in fig. 1. The growth
solution in which the nanorods have been placed in different arrangement, placed in a beaker, was kept in a water
bath having 90o C heated water. The solution is kept there for 2 hours with a constant steering. After that, using N2
gas the ZnO nanorods were rinsed and dried. The effects of the morphology of the synthesized samples were
examined using X-Ray Diffraction (XRD) and Filled Emission – Scanning Electron Microscopy (FE-SEM)
techniques. UV-Vis Spectrophotometer was used to measure the optical absorbance of the nanostructures. The light
signals of the wavelengths ranging from 350nm to 850nm were studied for absorbance. Another device fluorescence
spectrometer was used to measure photoluminescence (PL) of the room temperature (RT) at 375nm wavelength.
Raman spectrometer was used to study the Raman Effects. A DC voltage source was used at room temperature to
measure the I-V characteristics of nanostructured Schottky diodes.

Water Bath

Growth Solution (90o C)

Sample 1 with seed layer facing down

Sample 2 with seed layer placed vertically

Sample 3 with seed layer facing up

FIGURE 1. Substrate orientations of ZnO with seed layer facing down (Sample 1), with seed layer placed vertically (Sample 2)
and with seed layer facing up (Sample 3)

RESULTS AND DISCUSSION

Surface Morphology
The shape and density of synthesized nanostructure was affected by the orientations of the seeded substrate. The
nanostructures arranged vertically with hexagonal level tops were found on the seeded substrate. The substrate
placed vertically was seen as a small piece of bar whose size was decreased and was developed parallel to the
substrate. An amazing change in morphology was observed. A large bunch of little nanoparticles were seen that may
be due to the acceleration of both essential and auxiliary development components that established over the
substrate, favoring multi-directional development. This component was explained for development of various ZnO
structures [10].

Electronic and Electrical Characterization

The morphological effects on electrical and electronic properties of ZnO nanostructure were examined. The
linear behavior of the Schottky diode which was constructed by diffusing of sample and Au metal was shown in fig.
2. Fig. showed the non- linear response of diode also. It was found that for sample 1, 2 and 3, the cut – in voltage

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was 0.39V, 0.43V and 0.55V respectively. The ohmic characteristics of the substrate were also studied. The ohmic
characteristic is represented by the linear I-V characteristics for forward and reverse bias as shown in fig. 2.

3.60E-06 Sample 3
Sample 2
Sample 1
Current (A) 2.40E-06

1.20E-06

0.00E+00
-2.25 -1.25 -0.25 0.75 1.75

-1.20E-06
Voltage (V)

FIGURE 2. I–V plot for ohmic contact

The semi – logarithmic characteristics for different values of reverse bias voltages and forward bias voltages are
shown in I-V plot as demonstrated in fig. 3. For hexagonal ZnO nanorods, the current in forward biased condition
was higher for sample 1 than sample 2 and sample 3. At lower voltages i.e. 0.1V to 0.3V, the current increases
exponentially and at higher voltages i.e. 0.5V to 2.0V, it flows linearly. From this we conclude that Au metal is
successfully alloyed to the nanostructure with series resistance to make metal – semiconductor junction. Fig. 3 also
shows the rectification ratio (IF/IR) where IF is forward current and IR is reverse current. If the rectification ratio
shown is small, it means that without cleaning the surface of ZnO nanostructure, the contacts might be made.

9.01E-07
8.01E-07
7.01E-07
Current (A)

6.01E-07
5.01E-07
4.01E-07
Sample 3
3.01E-07
Sample 2
2.01E-07 Sample 1
1.01E-07 Region 1 Region 2
1E-09
-2.25 -1.5 -0.75 0 0.75 1.5 2.25

Voltage (V)

FIGURE 3: Semi log I–V plot for Schottky diode with Au/ZnO/ITO interface

Mtangi et al. in [11] told that it might be very difficult to get the clean surface ZnO Schottky diodes. In our
study, the vertically arranged naborods have higher rectification ratio as compared to other samples which concludes
that a good performance is given by the highly oriented nanostructures. Schottky-Mott theory told that work
function, Φ is 0.8eV for Au/ZnO nanostructure which is the difference of work function of Au and electron affinity
(4.26eV) of ZnO nanorods. In our study, work function of sample 1, 2 and 3 measured are 0.85eV, 0.93eV and
0.96eV respectively.

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 “TABLE 1,” Schottky diode with Au/ZnO/ITO interface parameters:
Work Function, Φ (eV) Series Resistance (Ω) Reverse saturation current (I0, A)
Sample 1 0.85 665.3 4.97 x 10 -6
Sample 2 0.93 2958.6 5.93 x 10 -7
Sample 3 0.96 3362.2 2.52 x 10 -7

9.00E+00 Region 1
8.00E+00
7.00E+00 Region 2
Log Current (A)

6.00E+00
5.00E+00
4.00E+00
3.00E+00 Sample 3
Sample 2
2.00E+00
Sample 1
1.00E+00
1.00E-06
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5

Log Voltage (V)

FIGURE 4. Double-log I–V plot for Schottky diode with Au/ZnO/ITO interface at higher forward voltages

The dark region and Schottky effect didn’t help the current to transport over Schottky barriers [12-13]. Table 1
shows the large values of series resistances for sample 2 and sample 3 which approves the semi log graph of fig. 3.
The surface morphology affects the I-V parameters. Sample 1 shows good electrical characteristics. Compared with
sample 2 and sample 3, sample 1 provides good work function Φ, lowest RS, and highest rectification ratio due to
higher vertical conduction being provided by the vertically arranged nanorods. Fig. 4 shows double-log I–V plot for
Schottky diode with Au/ZnO/ITO interface at higher forward voltages.
Brillson et al. in [12] told that dielectric is induced in the Schottky diodes which are made by synthesized ZnO
nanostructures. The induced dielectric can change the barrier height and accordingly the current of the diode is
highly affected. Aydogan et al. in [14] told that electron states might be assigned large values of Φ which may cause
the metal work function to decrease or increase resulting in barrier height to increase or decrease. Log I-V
characteristics) of our synthesized Schottky diode has been used to study the charge transport mechanism of the
diode. This mechanism is described by the Power Law, I = kV m where m is charge transport factor, V is the voltage,
I is the current and k is constant. The factor m is slope of log I – log V plot.
Fig. 3 shows the graph which indicates two linear regions. For Sample 1, 2 and 3, the values of charge transport
factor, m for region 1 were 2.95, 2.82 and 3.06 respectively, and the values for region 2 was 2.2, 2.7 and 2.5
respectively. The result showed that both regions favors power law, I = Vm which suggested SCLC as the potential
charge transport factor [15]. It has also been found that the slopes at region 2 in comparison with region 1, were
slightly decreased, due to the fact that device followed a law called trap filled limit.

CONCLUSION

In the non- linear response of Schottky diode for sample 1, 2 and 3, the cut – in voltage was found to be as
0.39V, 0.43V and 0.55V respectively as shown by the I–V characteristics. Sample 1, taken from vertically arranged
nanorod showed the rectification ratio of 69 as the highest ratio at 2V while sample 2 and 3 showed this value as 33
and 27 respectively at the same voltage i.e. 2V. The series resistance and barrier height, the parameters of Schottky

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diode depend on the synthesized nanostructure’s morphology. Sample 1 shows the work function value, Φ of
0.85eV nearly equal to 0.8eV (theoretical value) while 0.93eV and 0.96eV values are shown by sample 2 and 3
respectively which are the higher ones. In forward bias high voltage range, SCLC was the potential transport factor
as stated by power law.

REFERENCES
1. Z.L. Wang, Journal of physics: condensed matter 16, R829 (2004).
2. Y.H. Shin, M.D. Kim, J.E. Oh, M.S. Han, S.G. Kim, K.S. Chung, Journal of Korean Physical Society 53, 2504
(2008).
3. M.Y.A. Rahman, A.A. Umar, R. Taslim, M.M. Salleh, Journal of Experimental Nanoscience 10, 599 (2015).
4. X.H. Zhang, S.Y. Xie, Z.Y. Jiang, X. Zhang, Z.Q. Tian, Z.X. Xie, R.B. Huang, L.S. Zheng, The Journal of
Physical Chemistry B 107, 10114 (2003).
5. M. Law, J. Goldberger, P. Yang, Annu. Rev. Mater. Res. 34, 83 (2004).
6. N.S. Singh, L. Kumar, A. Kumar, S. Vaisakh, S.D. Singh, K. Sisodiya, S. Srivastava, M. Kansal, S. Rawat,
T.A. Singh, Materials Science in Semiconductor Processing 60, 29 (2017).
7. Z. Liang, Q. Zhang, O. Wiranwetchayan, J. Xi, Z. Yang, K. Park, C. Li, G. Cao, Advanced Functional
Materials 22, 2194 (2012).
8. S. Oh, S. Kim, S.C. Shin, P.C. Su, Y.J. Yoon, K.J. Lee, S.J. Kim, H. Choi, S.J. Park, K.K. Kim, ECS Journal
of Solid State Science and Technology 6, Q13 (2017).
9. B.S. Mwankemwa, M.J. Legodi, M. Mlambo, J.M. Nel, M. Diale, Superlattices and Microstructures 107, 163
(2017).
10. A. Resmini, I.G. Tredici, C. Cantalini, L. Giancaterini, F. De Angelis, E. Rondanina, M. Patrini, D. Bajoni, U.
Anselmi-Tamburini, Journal of Materials Chemistry A 3, 4568 (2015).
11. W. Mtangi, F.D. Auret, C. Nyamhere, P.J. van Rensburg, A. Chawanda, M. Diale, J.M. Nel, W.E. Meyer,
Physica B: Condensed Matter 404, 4402 (2009).
12. L.J. Brillson, Y. Lu, Journal of Applied Physics 109, 8 (2011).
13. H. Von Wenckstern, E.M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R.
Pickenhain, M. Grundmann, Applied physics letters 84, 79 (2004).
14. S. Aydogan, U. Incekara, A.R. Deniz, A. Turut, Solid State Communications 150, 1592 (2010).
15. A. Dey, A. Layek, A. Roychowdhury, M. Das, J., Datta, S. Middya, D. Das, P.P. Ray, RSC Advances 5, 36560
(2015).

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