Professional Documents
Culture Documents
PROPERTIES
ENS167 FUNDAMENTALS OF MATERIALS SCIENCE AND ENGINEERING
WILLIAM D. CALLISTER JR.
QUESTIONS TO BE
ANSWERED...
How are electrical conductance and resistance
characterized?
What are the physical phenomena that distinguish
conductors, semiconductors, and insulators?
For metals, how is conductivity affected by
imperfections, temperatures, and deformation?
For semiconductors, how is conductivity affected by
impurities (doping) and temperature?
ELECTRICAL
CONDUCTION
OHM'S LAW
ELECTRICAL CONDUCTIVITY
ELECTRONIC AND IONIC CONDUCTION
ENERGY BAND STRUCTURES AND SOLIDS
OHM'S LAW
relates the current I - or time rate of charge
passage - to the applied voltage V as
follows:
resistance of the
V=IR
material,
ohms (V/A)
voltage,
volts (J/C) Current,
ELECTRICAL RESISTIVITY ,
amperes (C/s) material property that is independent of
specimen geometry but related to R through
the expression
J = σε
intensity
ability to carry a current
ε = V/l
current density
(I/A)
unit: reciprocal ohm-meter
resistivity
SI unit: siemens per meter
(S/m)
CLASSIFICATION OF
MATERIALS
ACCORDING TO THE EASE WITH WHICH THEY CONDUCT AN
ELECTRIC CURRENT
Conductors Semiconductors
Insulators
negatively charged
particle
ENERGY BAND
STRUCTURES IN
SOLIDS
FERMI ENERGY
energy corresponding to the highest filled state at 0 K
ELECTRICAL
CONDUCTION
CONT.
CONDUCTION IN TERMS OF BAND AND
ATOMIC BONDING MODELS
ELECTRON MOBILITY
ELECTRICAL RESISTIVITY OF METALS
ELECTRICAL CHARACTERISTICS OF
COMMERCIAL ALLOYS
CONDUCTION IN
TERMS OF BAND
AND ATOMIC
BONDING MODEL
METAL
For metals having either of the band
structures shown above, there are vacant
energy states adjacent to the highest filled
state at Ef. Thus, very little energy is required
to promote electrons into the low lying empty
states
CONDUCTION IN TERMS OF BAND
AND ATOMIC BONDING MODEL
SEMICONDUCTORS
AND INSULATORS
CHARGE CARRIERS IN
INSULATORS AND
SEMICONDUCTORS
Free Electron
– negative charge
– in conduction band
Hole
– positive charge
– vacant electron state in
the valence band
ELECTRON MOBILITY
Vd = 𝜇eℰ
The drift velocity 𝜐d represents the average electron velocity in the
direction of the force imposed by the applied field
The constant of proportionality 𝜇e is called the electron mobility and is an
indication of the frequency of scattering events; its units are square meters
per volt-second (m2 /V·s)
where n is the number of free
or conducting electrons per
The conductivity 𝜎 of most materials
may be expressed as unit volume (e.g., per cubic
meter) and |e| is the absolute
magnitude of the electrical
charge on an electron (1.6 ×
10−19 C). Thus, the electrical
conductivity is proportional to
both the number of free
electrons and the electron
mobility
METALS: INFLUENCE OF TEMPERATURE AND
IMPURITIES ON RESISTIVITY
INFLUENCE OF TEMPERATURE
where A is a composition-
independent constant that is a
function of both the impurity and
host metals.
For a two-phase alloy consisting of
𝛼 and 𝛽 phases, a rule-of-mixtures
expression may be used to
approximate the resistivity as
follows:
INTRINSIC SEMICONDUCTOR
those in which the electrical behavior is
based on the electronic structure
inherent in the pure material.
EXTRINSIC SEMICONDUCTOR
those in which the electrical
characteristics are dictated by impurity
atoms.
SEMICONDUCTIVITY
SEMICONDUCTIVITY
Pure Material Semiconductors:
e.g., Silicon & Germanium
Group IVA materials
Compound semiconductors
III-V compounds
Ex: GaAs & InSb
II-VI compounds
Ex: CdS & ZnTe
INTRINSIC
The wider the electronegativity difference
between the elements the wider the energy
gap.
SEMICONDUCTORS
INTRINSIC SEMICONDUCTION IN TERMS OF
ELECTRON AND HOLE MIGRATION
electron mobility
NUMBER OF CHARGE
CARRIERS
INTRINSIC CONDUCTIVITY EXAMPLE: GaAs
Adapted from Figs. 18.12(a) & 18.14(a), Callister & Rethwisch 8e.
EXTRINSIC
EXTRINSIC SEMICONDUCTIVITY
SEMICONDUCTIVITY
EXTRINSIC
SEMICONDUCTORS:
CONDUCTIVITY VS. TEMPERATURE
Data for Doped Silicon:
σ increases doping
reason: imperfection sites lower the activation
energy to produce mobile electrons.
hole mobility
THE HALL
EFFECT
When a voltage is applied across a capacitor, one plate becomes positively charged and the
other negatively charged, with the corresponding electric field directed from the positive to
the negative plates. The capacitance C is related to the quantity of charge stored on either
plate Q by
C = Q/V C = 𝜀0 A/ l 𝜀r = 𝜀/𝜀0
Ionic Polarization occurs only in materials that are ionic. An applied field acts to
displace cations in one direction and anions in the opposite direction, which gives
rise to a net dipole moment. The magnitude of the dipole moment for each ion
pair pi is equal to the product of the relative displacement di and the charge on
each ion, or
pi = qdi
TYPES OF POLARIZATION
The third type, orientation polarization, is found only in substances that possess
permanent dipole moments. Polarization results from a rotation of the permanent
moments into the direction of the applied field. This alignment tendency is counteracted by
the thermal vibrations of the atoms, such that polarization decreases with increasing
temperature. The total polarization P of a substance is equal to the sum of the electronic,
ionic, and orientation polarizations (Pe, Pi , and Po, respectively), or
P = Pe + Pi + Po
DIELECTRIC
BEHAVIOR CONT.
FREQUENCY DEPENDENCE OF THE
DIELECTRIC CONSTANT
DIELECTRIC STRENGTH
DIELECTRIC MATERIALS
FREQUENCY DEPENDENCE OF THE DIELECTRIC CONSTANT
Alternating Currents
Electric Field changes
along with time
FREQUENCY DEPENDENCE OF THE DIELECTRIC CONSTANT
RELAXATION
FREQUENCY
For each polarization type, some
minimum reorientation time exists
that depends on the ease with
which the particular dipoles are
capable of realignment.
FREQUENCY DEPENDENCE OF THE DIELECTRIC CONSTANT
is dependent upon
frequency magnitude
FREQUENCY DEPENDENCE OF THE DIELECTRIC CONSTANT
DIELECTRIC
LOSS
absorption of electrical energy by
a dielectric material that is
subjected to an alternating electric
field.
dielectric loss
DIELECTRIC STRENGTH
DIELECTRIC STRENGTH
DIELECTRIC
As the current through a dielectric by the motion of
these electrons increases dramatically, sometimes
BREAKDOWN
localized melting, burning, or vaporization occurs.
DIELECTRIC
Represents the magnitude of an electric field
necessary to produce a breakdown.
Ceramics
DIELECTRIC
MATERIALS
A number of ceramics
and polymers are used as
insulators and/or
capacitors.
Polymers
DIELECTRIC MATERIALS
CERAMICS
Includes: glass, porcelain, steatite, and mica
Dielectric constants: 6 to 10
Additional info: high dimensional stability and
mechanical strength
Applications: electrical insulation, switch bases,
and light receptacles
DIELECTRIC MATERIALS
POLYMERS
Dielectric constants: 2 to 5
Applications: insulation of wires, cables,
motors, generators, capacitors, etc.
OTHER ELECTRICAL
CHARACTERISTICS OF
MATERIALS
FERROELECTRICITY
Electrical Energy
Electrical Energy
Mechanical Energy
a) stress-free
b) with applied
stress
Adapted from Fig. 18.36, Callister & Rethwisch 8e. (Fig. 18.36 from Van Vlack, Lawrence H., Elements of
Materials Science and Engineering, 1989, p.482, Adapted by permission of Pearson Education, Inc., Upper
Saddle River, New Jersey.)
WHAT MAKES A MATERIAL PIEZOELECTRIC?
Atomic Structure
Distribution of electric
charge
Similarities
associated with the asymmetry in the crystal structure of the materials
can generate an electric charge or voltage in response to an external stimulus
Differences
ferroelectric materials have permanent electric dipole moment, piezoelectric materials do not
ferroelectric materials can retain their polarization even in the absence of electric field,
piezoelectric materials do not
piezoelectric materials do not have the ability to switch polarization states
All ferroelectric materials
are piezoelectric, but not all
piezoelectric materials are
ferroelectric.
こんにちは
SUMMARY
Electrical conductivity Conductors, semiconductors, and
and resistivity are: insulators...
material parameters differ in range of conductivity values
geometry independent differ in availability of electron excitation states
ELECTRICAL
PROPERTIES
ENS167 FUNDAMENTALS OF MATERIALS SCIENCE AND ENGINEERING
WILLIAM D. CALLISTER JR.
こんにちは