PD - 95164

IRF7105PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance N-CHANNEL MOSFET

l Dual N and P Channel Mosfet S1

1 8
D1 N-Ch P-Ch
l Surface Mount G1
2 7
D1
l Available in Tape & Reel VDSS 25V -25V
3 6
S2 D2
l Dynamic dv/dt Rating
l Fast Switching G2
4 5
D2 RDS(on) 0.10Ω 0.25Ω
P-CHANNEL MOSFET
l Lead-Free
Top View ID 3.5A -2.3A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and SO-8
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.

Absolute Maximum Ratings

Max.
Parameter Units
N-Channel P-Channel
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.5 -2.3
I D @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.8 -1.8 A
IDM Pulsed Drain Current  14 -10
P D @TC = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ‚ 3.0 -3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient „ ––– ––– 62.5 °C/W

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IRF7105PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 25 — — VGS = 0V, I D = 250µA
V
P-Ch -25 — — VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient N-Ch — 0.030 — Reference to 25°C, ID = 1mA
V/°C
P-Ch — -0.015 — Reference to 25°C, ID = -1mA
— 0.083 0.10 VGS = 10V, I D = 1.0A ƒ
N-Ch
RDS(ON) Static Drain-to-Source On-Resistance — 0.14 0.16 VGS = 4.5V, ID = 0.50A ƒ
Ω
— 0.16 0.25 VGS = -10V, ID = -1.0A ƒ
P-Ch
— 0.30 0.40 VGS = -4.5V, I D = -0.50A ƒ
V GS(th) Gate Threshold Voltage N-Ch 1.0 — 3.0 VDS = VGS, I D = 250µA
V
P-Ch -1.0 — -3.0 VDS = VGS, I D = -250µA
g fs Forward Transconductance N-Ch — 4.3 — VDS = 15V, I D = 3.5A ƒ
S
P-Ch — 3.1 — VDS = -15V, I D = -3.5A ƒ
N-Ch — — 2.0 VDS = 20V, VGS = 0V
I DSS Drain-to-Source Leakage Current P-Ch — — -2.0 VDS = -20V, VGS = 0V,
µA
N-Ch — — 25 VDS = 20V, VGS = 0V, TJ = 55°C
P-Ch — — -25 VDS = -20V, V GS = 0V, TJ = 55°C
I GSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V
Qg Total GateCharge N-Ch — 9.4 27
N-Channel
P-Ch — 10 25
I D = 2.3A, VDS = 12.5V, VGS = 10V
Qgs Gate-to-Source Charge N-Ch — 1.7 —
nC ƒ
P-Ch — 1.9 —
P-Channel
Qgd Gate-to-Drain ("Miller") Charge N-Ch — 3.1 —
I D = -2.3A, VDS = -12.5V, VGS = -10V
P-Ch — 2.8 —
td(on) Turn-On Delay Time N-Ch — 7.0 20
N-Channel
P-Ch — 12 40
VDD = 25V, I D = 1.0A, RG = 6.0Ω,
tr Rise Time N-Ch — 9.0 20
RD = 25Ω
P-Ch — 13 40
ns ƒ
td(off) Turn-Off Delay Time N-Ch — 45 90
P-Channel
P-Ch — 45 90
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
tf Fall Time N-Ch — 25 50
RD = 25Ω
P-Ch — 37 50
LD Internal Drain Inductace N-P — 4.0 — Between lead , 6mm (0.25in.)from
nH
LS Internal Source Inductance N-P — 6.0 — package and center of die contact
C iss Input Capacitance N-Ch — 330 —
N-Channel
P-Ch — 290 —
VGS = 0V, V DS = 15V, ƒ = 1.0MHz
C oss Output Capacitance N-Ch — 250 —
pF
P-Ch — 210 —
P-Channel
Crss Reverse Transfer Capacitance N-Ch — 61 —
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
P-Ch — 67 —

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.0
IS Continuous Source Current (Body Diode) P-Ch — — -2.0 A
N-Ch — — 14
I SM Pulsed Source Current (Body Diode)  P-Ch — — -9.2
N-Ch — — 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V ƒ
VSD Diode Forward Voltage P-Ch — — -1.2 TJ = 25°C, IS = -1.3A, VGS = 0V ƒ
N-Ch — 36 54 ns N-Channel
trr Reverse Recovery Time P-Ch — 69 100 TJ = 25°C, IF = 1.3A, di/dt = 100A/µs
N-Ch — 41 75 nC P-Channel ƒ
Qrr Reverse Recovery Charge P-Ch — 90 180 TJ = 25°C, I F = -1.3A, di/dt = 100A/µs
ton Forward Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.

‚ N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel I SD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2 www.irf.com
 ID , Drain-to-Source Current ( A )
N-Channel
IRF7105PbF

ID , Drain-to-Source Current ( A )
VDS , Drain-to-Source Voltage ( V ) VDS , Drain-to-Source Voltage ( V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

RDS (on) , Drain-to-Source On Resistance

ID , Drain-to-Source Current ( A )

( Normalized)

VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )

V DS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage
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IRF7105PbF I SD , Reverse Drain Current ( A )
N-Channel

I D , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V ) V DS , Drain-to-Source Voltage ( V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
RD
VDS

VGS
I D , Drain Current ( A )

D.U.T.
RG
+
V
- DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VDS
TA , Ambient Temperature ( °C )
90%

Fig 9. Maximum Drain Current Vs.

Ambient Temperature
Current Regulator 10%
Same Type as D.U.T.
VGS
td(on) tr t d(off) tf
50KΩ

12V .2µF Fig 10b. Switching Time Waveforms

.3µF

+
V
D.U.T. - DS QG
10V
VGS QGS QGD

3mA
VG

IG ID
Current Sampling Resistors
Charge

Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform
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 -ID , Drain-to-Source Current ( A )
P-Channel
IRF7105PbF

-ID , Drain-to-Source Current ( A )

-VDS , Drain-to-Source Voltage ( V ) -V DS , Drain-to-Source Voltage ( V )

Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics

RDS (on) , Drain-to-Source On Resistance

-ID , Drain-to-Source Current ( A )

( Normalized)

-V GS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )

Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance

Vs. Temperature
-V GS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )

-VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )

Fig 16. Typical Capacitance Vs. Fig 17. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
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IRF7105PbF -ISD , Reverse Drain Current ( A )
P-Channel

-ID , Drain Current ( A )

VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V )

Fig 18. Typical Source-Drain Diode Fig 19. Maximum Safe Operating Area
Forward Voltage RD
VDS

VGS
-ID , Drain Current ( A )

D.U.T.
RG -
+ VDD

-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 21a. Switching Time Test Circuit

VDS
TA , Ambient Temperature ( °C ) 90%

Fig 20. Maximum Drain Current Vs.

Ambient Temperature
Current Regulator 10%
Same Type as D.U.T.
VGS
td(on) tr t d(off) tf
50KΩ

12V .2µF Fig 21b. Switching Time Waveforms

.3µF
-

D.U.T. +VDS QG
-10V
VGS QGS QGD

-3mA
VG

IG ID
Current Sampling Resistors
Charge

Fig 22a. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform
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 N & P-Channel
IRF7105PbF
100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02
PDM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)

Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7105PbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 24. For N and P Channel HEXFETS

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 IRF7105PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F 7101 A = AS SEMBLY S IT E CODE
RECT IFIER LOT CODE
LOGO
PART NUMBER

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IRF7105PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
10 www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
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can reasonably be expected to result in personal
injury.
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