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2SK4066
N-Channel Power MOSFET
http://onsemi.com
60V, 100A, 4.7mΩ, TO-262-3L/TO-263-2L
Features
• ON-resistance RDS(on)1=3.6mΩ(typ.) • Input capacitance Ciss=12500pF (typ.)
• 4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 100 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 400 A
1.65 W
Allowable Power Dissipation PD
Tc=25°C 90 W
Continued on next page.
2SK4066-1E 2SK4066-DL-1E
10.0 4.5 8.0 10.0 4.5 8.0
1.75
1.75
1.3 1.3
1.2
1.2
4 7.9
7.9
5.3
0.9
5.3
0.9
9.2
9.2
13.4
3.0
1.4
3.0
0.254
1.47 1 2 3
1.27
1.35
1.27
13.08
1 2 3
1 : Gate 1 : Gate
2.4
2.4
2 : Drain 2 : Drain
3 : Source 3 : Source
4 : Drain
0 to 0.25
2.54 2.54
TO-262-3L
TO-263-2L
LOT No.
DL
1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit
VIN VDD=30V
L 10V
0V
≥50Ω ID=50A
VIN RL=0.6Ω
D VOUT
2SK4066 PW=10μs
10V D.C.≤1%
50Ω VDD
0V G
2SK4066
P.G 50Ω S
Ordering Information
Device Package Shipping memo
2SK4066-1E TO-262-3L 50pcs./magazine
Pb Free
2SK4066-DL-1E TO-263-2L 800pcs./reel
No. A0225-2/9
2SK4066
ID -- VDS ID -- VGS
200 200
Tc=25°C VDS=10V
8V
6V
4V
180 180
10V
160 160
Drain Current, ID -- A
Drain Current, ID -- A
140 140
120 120
100 100
80 VGS=3V 80
60 60
C 5°C
°C
40 40
25° --2
5
=7
Tc
20 20
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain-to-Source Voltage, VDS -- V IT10467 Gate-to-Source Voltage, VGS -- V IT10468
RDS(on) -- VGS RDS(on) -- Tc
15 10
14
ID=50A
9
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source V
8
5
=4 =50
A
7 V GS V, I D
= 1 0
6 4 V GS
5
Tc=75°C
3
4 25°C
3 --25°C 2
2
1
1
0 0
0 1 2 3 4 5 6 7 8 9 10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT10469 Case Temperature, Tc -- °C IT10470
| yfs | -- ID IS -- VSD
3 3
VDS=10V 2 VGS=0V
2
Forward Transfer Admittance, | yfs | -- S
100
7
100 5
7 3
°C 2
Source Current, IS -- A
5 25
10
3 7
°C 5
2 --25 3
= °C
Tc 75
2
10 1.0
7
7 5
5 3
2
3
--25°C
0.1
5°C
25°C
2 7
5
Tc=7
3
1.0 2
7 0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 0 0.3 0.6 0.9 1.2 1.5
Drain Current, ID -- A IT10471 Diode Forward Voltage, VSD -- V IT10472
SW Time -- ID Ciss, Coss, Crss -- VDS
3 3
VDD=30V f=1MHz
2 VGS=10V 2
Switching Time, SW Time -- ns
td(off) Ciss
10k
Ciss, Coss, Crss -- pF
1000
7 7
tf
5 5
3 3
2 2
tr Coss
Crss
100 1k
td(on)
7 7
5 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 5 10 15 20 25 30
Drain Current, ID -- A IT10473 Drain-to-Source Voltage, VDS -- V IT10474
No. A0225-3/9
2SK4066
VGS -- Qg ASO
10 1000
VDS=30V 7 IDP=400A ≤10μs
5 10
9 ID=100A μs
3 10
Gate-to-Source Voltage, VGS -- V
2 1m 0μ
8 ID=100A 1 10 s s
100 DC 00m ms
op s
Drain Current, ID -- A
7 7
5 era
tio
6 3 n
2
5 10
7 Operation in
5 this area is
4
3 limited by RDS(on).
2
3
1.0
2 7
5
1 3
2
Tc=25°C
0 0.1 Single pulse
0 50 100 150 200 250 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Total Gate Charge, Qg -- nC IT10475 Drain-to-Source Voltage, VDS -- V IT10960
PD -- Ta PD -- Tc
2.0 100
Allowable Power Dissipation, PD -- W
60
1.0 50
40
30
0.5
20
10
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT10482 Case Temperature, Tc -- °C IT10483
EAS -- Ta
120
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C IT10478
No. A0225-4/9
2SK4066
Taping Specification
2SK4066-DL-1E
No. A0225-5/9
2SK4066
No. A0225-6/9
2SK4066
Magazine Specification
2SK4066-1E
No. A0225-7/9
2SK4066
Outline Drawing
2SK4066-1E
Mass (g) Unit
1.6 mm
* For reference
No. A0225-8/9
2SK4066
Note on usage : Since the 2SK4066 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0225-9/9