Implementation of ZVT-ZCT-PWM Boost Converter

A
Dissertation Report
On
“Implementation of ZVT-ZCT-PWM Boost Converter”
Submitted by
Vikram Sadashiv Rathod
Under the guidance of

Prof. P. R. Jadhav
For the degree of
Master of Technology
(Electrical Power Systems)
Department of Electrical Engineering,

Government College of Engineering, Karad
(An Autonomous Institute of Government of Maharashtra)
(2016 - 2017)
A
DISSERTATION REPORT
ON
“Implementation of ZVT-ZCT-PWM Boost Converter”
Submitted by
in partial fulfillment for the award of Degree of
Master of Technology
Department of Electrical Engineering,

Government College of Engineering, Karad
(An Autonomous Institute of Government of Maharashtra)
VIDYANAGAR, KARAD, 415124 DIST SATARA

Phone – (02164) 271711, 271712 Fax No. – (02164) 271713
Website: www.gcekarad.ac.in Email: principal@gcekarad.ac.in
(2016 - 2017)
CERTIFICATE
This is to certify that, the dissertation entitled “Implementation of ZVT-ZCT-PWM

Boost Converter” which is being submitted herewith for the award of the Degree of ‘Master
of Technology’ in (Electrical Power Systems) of Government College of Engineering, Karad
(An Autonomous Institute of Govt. of Maharashtra), affiliated to Shivaji University,
Kolhapur, India. This is the result of the work carried out by Vikram Sadashiv Rathod
under my supervision and guidance. This work embodied in this dissertation has not formed
earlier for the basis of the award of any degree or compatible certificate or similar title of this
for any other diploma/examining body or university to the best of knowledge and belief.
Place: Karad.
Date:
Prof. P. R. Jadhav Prof. V. B. Waghmare

Guide Head of Department
Department of Electrical Engineering Department of Electrical Engineering
Government College of Engineering, Government College of Engineering,
Karad. Karad.
Principal
Government College of Engineering,
Karad.
DECLARATION
I hereby declare that I have formed, completed and written the dissertation entitled
“Implementation of ZVT-ZCT-PWM Boost Converter”. It has not been previously
submitted for the basis of the award of any Degree or Diploma or other similar title for any
other Examining body or University.
Place: Karad
Date:

M.Tech.
Enrolment No: 15251258
DISSERTATION APPROVAL SHEET
Vikram Sadashiv Rathod has done the appropriate work related to
“Implementation of ZVT-ZCT-PWM Boost Converter” in partial fulfillment for the
award of Degree of Master of technology (Electrical Power Systems) is being submitted to
Government College of Engineering, Karad (An Autonomous Institute of Govt. of
Maharashtra), affiliated to Shivaji University, Kolhapur, India.
Guide: Prof. P. R. Jadhav
External Examiner:
Place: Karad
Date:
INDEX
List of Symbols I
List of Abbreviations II
List of figures III
List of Tables V
1 INTRODUCTION 1
2 LITERATURE SURVEY 4
2.1 Necessity 11
2.2 Theme 12
2.3 Objectives 12
2.4 Organization of Report 12
3 CONVERTER TOPOLOGIES 13
3.1 Power Electronics 13
3.2 Switches 13
3.2.1 Power MOSFETs 13
3.3 Basic of DC-DC Converter 15
3.3.1 Principle of Chopper Circuit 15
3.4 Switching Methods for DC-DC Converter 16
3.4.1 Hard Switching Topologies 17
4 SOFT SWITCHING OPERATION OF PROPOSED CONVERTER 23
4.1 Soft Switching Topologies 23
4.2 Types of Soft Switching Techniques 23
4.2.1 Zero Voltage Switching (ZVS) 23
4.2.2 Zero Current Switching (ZCS) 24
4.3 Proposed ZVT-ZCT-PWM Boost Converter 25
4.4 Operating modes of the converter 26
5 PERFORMANCE ANALYSIS 34
5.1 Analysis of Proposed Converter 34
5.2 Simulation of Proposed Boost Converter 35
5.3 Simulation Results 37
5.4 Hardware Implementation 40
5.4.1 Block Diagram of Hardware Prototype 40
5.4.2 Hardware Layout of ZVT-ZCT-PWM Boost Converter 41
5.4.3 Power Supply 41
5.4.4 Microcontroller (PIC 16F877A) 42
5.4.5 Isolation Circuit (Opto-coupler) 45
5.4.6 Liquid Crystal Display (LCD) RG1602A 46
5.4.7 Power MOSFET 47
5.5 Design parameter of boost converter 49
5.6 Hardware Results and discussion 52
5 CONCLUSION AND FUTURE SCOPE 53
6.1 Conclusion 53
6.2 Future Scope 53
References
Acknowledgement
Appendix
List of Symbols
Symbol Illustration
Ton Turn on time
Toff Threshold Voltage
DF Freewheeling Diode
F Operating Frequency
T Chopping Period
L Inductor
C Capacitor
R Resistance
S Switch
Vin Input Voltage
Vout Output Voltage
Lr Resonance Inductor
fsw Switching Frequency
LF Main Inductor
Vo output voltage
CF output filter capacitor
Ls Snubber inductor
Cs Snubber capacitor
Cr parasitic capacitor
I
List of Abbreviations
Abbreviations Illustration
AC Alternating Current
DC Direct Current
ZVS Zero Voltage Switching
ZCS Zero Current Switching
ZVZCS Zero Voltage Zero Current Switching
DGA Dissolved Gas Analysis
PWM Pulse Width Modulation
ZCT Zero Current Transition
ZVT Zero Voltage Transition
IGBT Insulated Gate Bipolar Transistor
Metal Oxide Semiconductor Field Effect
MOSFET
Transistor
BJT Bipolar Junction Transistor
GTO Gate Turn Off Thyristor
SEPIC Single Ended Primary Inductor Converter
PV Photo Voltaic
PSM Phase Shift Modulation
LED Light Emitting Diode
Programmable and Erasable Read Only
PEROM
Memory
II
List of Figures
Figure Illustration Page
3.1 N-Channel power MOSFET symbol 14
3.2 Elementary chopper circuit 15
3.3 Output voltage and current waveform of chopper circuit 16
3.4 Hard switching and soft switching 17
3.5 Circuit diagram of buck converter 18
Steady-state inductor voltage and current waveform, buck

3.6 converter 18
3.7 Circuit diagram of boost converter 19
Steady-state inductor voltage and current waveform, boost

3.8 converter 19
3.9 Circuit diagram of buck-boost converter 20
3.10 Steady-state inductor voltage and current waveform, buck-boost

converter 20
3.11 Circuit diagram of cuk converter 21
3.12 Circuit diagram of SEPIC converter 21
4.1 Zero voltage switching (ZVS) 23
4.2 Zero current switching (ZCS) 24
4.3 Circuit Scheme of Proposed ZVT-ZCT-PWM boost converter 25
4.4 Operating modes of the converter 25
4.4(a) Mode 1 26
4.5(b) Mode 2 27
4.6(c) Mode 3 27
4.7(d) Mode 4 28
4.8(e) Mode 5 28
III
4.9(f) Mode 6 29
4.10(g) Mode 7 30
4.11(h) Mode 8 31
4.12(i) Mode 9 31
4.13(j) Mode 10 32
4.14(k) Mode 11 32
Circuit Diagram of Boost Converter with Auxiliary Resonant

5.1
Circuit 34
5.2 Overall MATLAB-Simulink Model 35
5.3 Block Diagram of PWM Generator 36
Output Voltage Vs Time across main switch while snubber

5.4
circuit disconnected 37
5.5 Output Current Vs Time across main switch with snubber circuit 37
Output Voltage with input 150 V while snubber circuit

5.6
disconnect 38
5.7 Output Voltage with input 150 V with snubber circuit 38
Block diagram of hardware implementation of ZVT-ZCT-PWM

5.8
Boost converter 40
5.9 Hardware Connection of ZVT-ZCT-PWM Boost converter 41
5.10 5 V DC Supply 41
5.11 12 V DC Supply 42
5.12 Circuit diagram of micro-controller 45
5.13 Internal Structure of opto-Coupler 45
5.14 LCD display 47
5.15 LCD display showing result 47
5.16 Symbol of Power MOSFET 48
5.17 Structure of Power MOSFET 48
5.18 Output Voltage when input of rectifier circuit is 10V 54
IV
V
List of Tables
Table Illustration Page
3.1 Hard switching dc-dc converter topologies 22
5.1 Circuit Parameter 34
5.2 Simulink Output 39
5.3 Output Result with snubber cell 52
5.4 Output Result without snubber cell 53
V
Implementation of ZVT-ZCT-PWM Boost Converter
CHAPTER 1
INTRODUCTION
The modernization of industries and growing green power technologies raises the
demand of power electronic interfaces rapidly with the objective of improved efficiency,
compact size, and reduction in system cost with better power quality of supply.
Power electronics is the field of electrical engineering related to the use of
semiconductor devices to convert power from the form available from a source to that
required by a load. The load may be AC or DC, single-phase or three-phase, and may or
may not need isolation from the power source. The power source can be a DC source or
an AC source (single-phase or three-phase with line frequency of 50 or 60 Hz), an
electric battery, a solar panel, an electric generator or a commercial power supply. A
power converter takes the power provided by the source and converts it to the form
required by the load.
A power electronic system consists of one or more power electronic converters. A
power electronic converter is made up of power semiconductor devices controlled by
integrated circuits. The switching characteristics of power semiconductor devices permit
a power electronic converter to shape the input power of one form of power to the other.
The static power converters perform this operation very efficiently. The power electronic
converters are classified into five types. The power electronic converter can be AC-DC
converter, a DC-DC converter, a DC-AC inverter, diode rectifiers or an AC-AC
converter depending on the application [28].
Modem AC-DC power supplies utilize power factor correction in order to
minimize the harmonics in the input current drawn from the utility. The Boost topology
is the most popular topology for power factor correction today but it has some
disadvantages like very high EMI due to reverse recovery of the boost diode and high
switching losses caused by hard switching of the boost switch. Many variations of the
original boost topology have been suggested to overcome these problems. The Zero
Voltage Transition Boost converter is one such solution. In such a converter an auxiliary
resonant circuit is employed which is activated only when the boost switch is turning on
or off. This auxi1iary circuit allows the boost switch to turn on and off under zero
voltage conditions thus reducing the switching losses. However the auxiliary circuit
might be very complex and conduction losses in it might offset the expected rise in
Department of Electrical Engineering, Government College of Engineering, Karad Page 1

efficiency. In this thesis a soft-switching boost power converter is proposed and

analyzed. This converter reduces the EMI and increases the efficiency because the
auxiliary circuit is itself soft-switching and has low conduction losses due to creative
placement of the resonant capacitors.
In DC-DC power conversion a switched topology is often the only way to achieve
reasonable efficiency and can be done by using semiconductor switches and energy
storage devices that ideally do not dissipate energy. The trade-off for high efficiency is in
size and cost of passive energy storage which can often be the dominant factor for given
topology. In order to reduce the size of passive components, it is necessary to go for
higher frequency.
The incentive to move to higher frequency is not only given by the reduced size of
the passive components, but also by transient performance. With smaller inductors and
capacitors, less energy is stored in the converter, allowing for faster response to a change
in load. It is thus clear that much can be gained from moving to a design that enables
operation at very high frequency. In conventional hard switched converters upper bound
for the switching frequency is determined by the losses associated with each switching
cycle. One way to maintain high efficiency at higher switching frequency is to employ a
low switching loss converter topology, incorporating zero voltage transition (ZVT) or
zero current transition (ZCT).
Boost converter is one of the most important and widely used devices of modern
power applications. Till now Boost Converters with snubber circuits are used where
switching losses are dissipated in external resistors leading to higher switching losses and
low overall efficiency. Modern Boost converters use power electronics switches which
have the following properties such as high current and voltage rating, fast switching, low
power gate drive. These properties lead to following disadvantages such as at high
blocking voltage the switching frequency is reduced to low values and due to high
switching speed, the rate of change of current and voltages become high. Boost converter
with auxiliary resonant circuit can overcome these problems by either forcing current
(ZCS) or voltage (ZVS) or both of them to zero. By adopting this topology the total
efficiency of the system is improved. As boost converters are widely used these days
therefore large amount of power is saved from wastages.
From all power converters, High Frequency PWM dc-dc boost converter is usually
used in battery charging, power factor correction and renewable energy application. It is
widely used in industries. In order to achieve higher power density, fast response with

reduction in size and weight, it required to operate converter at high switching frequency.
dc-dc boost converter are used in regenerative braking of DC motors, Low power boost
converters are used in portable device applications, switching regulator circuit in highly
efficient white LED drives etc. However, high-frequency operation results in increased
switching losses, higher electromagnetic interference (EMI), and lower converter
efficiency. Especially, at high frequencies and high power levels, it is necessary to use
soft-switching techniques to reduce switching losses [1]–[22].

CHAPTER 2
LITERATURE SURVEY
 N. Altinas, F. bakan and I. Akoy presented a new boost converter with an

active snubber cell is proposed. The active snubber cell provides main switch to turn
ON with zero-voltage transition (ZVT) and to turn OFF with zero-current transition
(ZCT). The proposed converter incorporating this snubber cell can operate with soft
switching at high frequencies. Also, in this converter all semiconductor devices operate
with soft switching. There is no additional voltage stress across the main and auxiliary
components. The converter has a simple structure, minimum number of components,
and ease of control as well. The operation principle and detailed steady-state analysis of
the novel ZVT-ZCT-PWM boost converter are given. The presented theoretical
analysis is verified exactly by a prototype of 100 kHz and 1 kW converter. Also, the
overall efficiency of the new converter has reached a value of 97.8% at nominal output
power.
 G. Hua, C. S. Leu, Y. Jiang, and F. C. Lee proposed the soft-switching
techniques applied to the PWM converters, with the exception of few isolated cases, are
subjected to either high switch voltage stresses or high switch current stresses, or both.
A new class of zero-voltage-transition PWM converters is proposed where both the
transistor and the rectifier operate with zero-voltage switching, and are subjected to
minimum voltage and currwit stresses. Breadboarded converters are constructed to
verify the novelty of the proposed new family of converters.
 G. Hua, C. S. Leu, Y. Jiang, and F. C. Lee presented A new family of zero-
current-transition (ZCT) pulse width- modulated (PWM) converters are proposed. The
new family of converters implements zero-current turn-off forn power transistor(s)
without increasing voltagekurrent stresses and operates at a fixed frequency. The
proposed converters are deemed most suitable for high-power applications where the
minority-carrier semiconductor devices (suchas IGBTs, BJTs, and MCTs) are
predominantly used as the power switches. Theoretical analysis is verified on a 100
kHz, 1 kW ZCT-PWM boost converter using an IGBT.
 H. Mao, F. C. Lee, X. Zhou, H. Dai, M. Cosan, and D. Boroyevich
developed concept regarding Existing Zero-Current Transition (ZCT) converters do not
solve main switch turn-on problems and require auxiliary switches to be turned off with

high current, and therefore are not suitable for high power applications. Novel ZCT
schemes proposed in this paper enable all main switches and auxiliary switches to be
turned on and off under zero current conditions. The zero-current switching at both turn
on and turn-off not only reduces switching losses significantly, but also eliminates the
necessity of passive snubbers due to the much reduced switch stress. The cost of the
auxiliary switches can be reduced compared to the existing ZCT schemes due to their
zero-current turn-of .The proposed technology is well suited for dc-de and three-phase
converters with IGBTs, MCTY and GTOs. Theoretical analysis, computer simulation
and experimental results are presented to explain the proposed schemes.
 J. G. Cho, J. W. Baek, G. H. Rim, and I. Kang presented Novel zero-voltage-
transition (ZVT) pulse-width modulation (PWM) multiphase converters are presented.
To construct a ZVT multiphase converter in a conventional way, it is necessary to add
the auxiliary circuits with as many numbers of phases. In the proposed converter, only
one auxiliary circuit provides the zero-voltage switching (ZVS) for main switches and
diodes of all phases. So, the new converters are cost effective and attractive for high-
performance and high power-density conversion applications. Operation, features, and
characteristics of the two-phase buck converter are illustrated and verified on a 4-kW
100-kHz insulated gate bipolar transistor (IGBT)-based (a MOSFET for the auxiliary
switch) experimental circuit.
 C. J. Tseng and C. L. Chen proposed an active snubber cell is proposed to
contrive zero voltage- transition (ZVT) pulse width-modulated (ZVT-PWM)
converters. Except for the auxiliary switch, all active and passive semiconductor
devices in a ZVT-PWM converter operate at zero-voltage-switching (ZVS) turn on and
turn off. The auxiliary switch operates at ZVS turn off and near zero-current-switching
(ZCS) turn on. An analytical study on a boost ZVT-PWM converter with the proposed
active snubber cell is presented in detail. A 750-W 80-kHz prototype of the boost ZVT-
PWM converter has been built in the laboratory to experimentally verify the analysis.
Six basic ZVT-PWM converters can be easily created by attaching the proposed active
snubber cells to conventional PWM converters. A detailed design procedure of the
proposed active snubber cell is also presented in this paper.
 V. Grigore and J. Kyyra proposed An auxiliary circuit (consisting of one
active switch and some reactive components) is added to the original Buck converter.
The auxiliary circuit is inactive during the ON and OFF intervals of the main switch in

the normal Buck converter. However, the transitions between the two states are
controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch
in the Buck converter is forced to zero. Thus, the turn-on losses of the active switch are
practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative
passive snubber, reducing the turn-off losses to a great extent. Zero-Voltage-Transition
switching technique almost eliminates switching losses. The active switch operates
under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and
the switch in the auxiliary circuit operates under Zero- Current-Switching (ZCS)
conditions.
 K. M. Smith and K. M. Smedley presents general topological and electrical
properties common to all lossless passive soft-switching converters with defined
characteristics and proposes a synthesis procedure for the creation of new converters.
The synthesis procedure uses the properties to determine all possible locations for the
resonant inductors and capacitors added to achieve soft switching. Then a set of circuit
cells is used to recover the energy stored in these resonant elements. This paper also
explains the operation of the circuit cells and the many new passive lossless soft-
switching converters. A family of soft-switching boost converters is given as an
example of the synthesis procedure. Experimental waveforms are shown for a new soft-
switching Cuk converter.
 C. M. de O. Stein and H. L. Hey introduces a true zero-current and zero-
voltage transition (ZCZVT) commutation cell for dc–dc pulse width modulation
(PWM) converters operating with an input voltage less than half the output voltage. It
provides zero-current switching (ZCS) and zero-voltage switching (ZVS)
simultaneously, at both turn on and turn off of the main switch and ZVS for the main
diode. The proposed soft-switching technique is suitable for both minority and majority
carrier semiconductor devices and can be implemented in several dc–dc PWM
converters. The ZCZVT commutation cell is placed out of the power path, and,
therefore, there are no voltage stresses on power semiconductor devices. The
commutation cell consists of a few auxiliary devices, rated at low power, and it is only
activated during the main switch commutations. The ZCZVT commutation cell, applied
to a boost converter, has been analyzed theoretically and verified experimentally. A 1-
kW boost converter operating at 40 kHz with an efficiency of 97.9% demonstrates the
feasibility of the proposed commutation cell.

 D. Y. Lee, B. K. Lee, S. B. Yoo, and D. S. Hyun proposed a novel full-bridge

(FB) zero-voltage transition (ZVT) pulse width modulation (PWM) dc/dc converter
topology is proposed. The proposed FB-ZVT PWM dc/dc converter has zero-voltage
switching (ZVS) of main switches for the entire line and load range and an advantage
of achieving ZVS and zero current switching of the auxiliary switches using the
auxiliary network. The auxiliary network is simply composed of a saturable inductor,
auxiliary capacitors, and auxiliary diodes. With the help of the proposed auxiliary
network, the improved FB-ZVT PWM dc/dc converter has such characteristics as
higher overall system efficiency and better utilization of the auxiliary switches
compared with the conventional FB-ZVT PWM dc/dc converter. The operation
principles are explained in detail and the several interesting simulation and
experimental results verify the validity of the proposed circuit with an 83-kHz 1-kW
prototype converter using insulated gate bipolar transistors.
 H. Bodur and A. F. Bakan presented a new active snubber cell that overcomes
most of the drawbacks of the normal “zero voltage transition-pulse width modulation”
(ZVT-PWM) converter is proposed to contrive a new family of ZVT-PWM converters.
A converter with the proposed snubber cell can also operate at light load conditions. All
of the semiconductor devices in this converter are turned on and off under exact or near
zero voltage switching (ZVS) and/or zero current switching (ZCS). No additional
voltage and current stresses on the main switch and main diode occur. Also, the
auxiliary switch and auxiliary diodes are subjected to voltage and current values at
allowable levels. Moreover, the converter has a simple structure, low cost, and ease of
control. A ZVT-PWM boost converter equipped with the proposed snubber cell is
analysed in detail. The predicted operation principles and theoretical analysis of the
presented converter are verified with a prototype of a 2 kW and 50 kHz PWM boost
converter with insulated gate bipolar transistor (IGBT). In this study, a design
procedure of the proposed active snubber cell is also presented. Additionally, at full
output power in the proposed soft switching converter, the main switch loss is about
27% and the total circuit loss is about 36% of that in its counterpart hard switching
converter, and so the overall efficiency, which is about 91% in the hard switching case,
increases to about 97%.
 H. Yu, B. M. Song, and J. S. Lai presented a novel zero-current-transition
(ZCT) PWM dc/dc converters without additional current stress and conduction loss on

the main switch during the resonance period of the auxiliary cell. The auxiliary cell
consists of a resonant inductor, a resonant capacitor, an auxiliary switch and an
auxiliary diode in parallel with the main switch and the zero-current- switching (ZCS)
ranges of the main and the auxiliary switch of the proposed converters are entirely
achieved by operating the auxiliary cell. In addition, the resonant inductor of the
proposed ZCT cell helps soft turn-on of the main switch. The theoretical analysis and
the operation principle of the new ZCT technique are described in detail using a boost
converter as an example. To verify the validity of the proposed ZCT technique, the
simulation and the experiment were performed on the non-isolated and the isolated
converter, respectively. Here, the nonisolated converter is a boost converter having 100
kHz switching frequency, 1 kW rating power, and the isolated converter is a full-bridge
(FB) converter having 50 kHz switching frequency, 1 kW rating power.
 D. Y. Lee, M. K. Lee, D. S. Hyun, and I. Choy presents novel zero-current-
transition (ZCT) PWM dc/dc converters without additional current stress and
conduction loss on the main switch during the resonance period of the auxiliary cell.
The auxiliary cell consists of a resonant inductor, a resonant capacitor, an auxiliary
switch and an auxiliary diode in parallel with the main switch and the zero-current-
switching (ZCS) ranges of the main and the auxiliary switch of the proposed converters
are entirely achieved by operating the auxiliary cell. In addition, the resonant inductor
of the proposed ZCT cell helps soft turn-on of the main switch. The theoretical analysis
and the operation principle of the new ZCT technique are described in detail using a
boost converter as an example. To verify the validity of the proposed ZCT technique,
the simulation and the experiment were performed on the nonisolated and the isolated
converter, respectively. Here, the nonisolated converter is a boost converter having 100
kHz switching frequency, 1 kW rating power, and the isolated converter is a full-bridge
(FB) converter having 50 kHz switching frequency, 1 kW rating power.
 H. Bodur and A. F. Bakan proposed a new active snubber cell is proposed to
contrive a new family of pulse width modulated (PWM) converters. This snubber cell
provides zero voltage transition (ZVT) turn on and zero current transition (ZCT) turn
off together for the main switch of a converter. Also, the snubber cell is implemented
by using only one quasi resonant circuit without an important increase in the cost and
complexity of the converter. New ZVT–ZCT–PWM converter equipped with the
proposed snubber cell provides most the desirable features of both ZVT and ZCT

converters presented previously, and overcomes most the drawbacks of these

converters. Subsequently, the new converter can operate with soft switching
successfully at very wide line and load ranges and at considerably high frequencies.
Moreover, all semiconductor devices operate under soft switching, the main devices do
not have any additional voltage and current stresses, and the stresses on the auxiliary
devices are at low levels. Also, the new converter has a simple structure, low cost and
ease of control. In this study, a detailed steady state analysis of the new converter is
presented, and this theoretical analysis is verified exactly by a prototype of a 1-kW and
100-kHz boost converter.
 C. M. Wang A new family of zero-voltage-switching (ZVS) pulse width-
modulated (PWM) converters that uses a new ZVS-PWM switch cell is presented in
this paper. Except for the auxiliary switch, all active and passive semiconductor devices
in the ZVS-PWM converters operate at ZVS turn ON and turn OFF. The auxiliary
switch operates at zero-current-switching (ZCS) turns ON and OFF. Besides operating
at constant frequency, these new converters have no overvoltage across the switches
and no additional current stress on the main switch in comparison to the hard-switching
converter counterpart. Auxiliary components rated at very small current are used. The
principle of operation, theoretical analysis, and experimental results of the new ZVS-
PWM boost converter, rated 1 kW, and operating at 80 kHz, are provided in this paper
to verify the performance of this new family of converters.
 I. Aksoy, H. Bodur, and A. F. Bakan presented a new snubber cell is
developed in order to increase the power density and the efficiency in pulse width
modulation (PWM) converters and to decrease the EMI noise. The developed snubber
cell provides main switch both to turn on with zero-voltage transition (ZVT) and to turn
off with zero-current transition (ZCT). The converter incorporating this snubber cell
operates with soft switching (SS) in a wide range of line and load voltages. Also, all
semiconductor devices in the converter operate with SS. There is no additional voltage
stress in the main components, and the stresses of the auxiliary components are
negligible. The new converter has a simple structure, low cost, and ease of control as
well. The operation principle and detailed steady-state analysis of the ZVT-ZCT-PWM
boost converter with new snubber cell are presented. The presented theoretical analysis
is verified exactly by a prototype of 100 kHz and 500 W converter. Also, the overall

efficiency of the new converter has reached a value of 98.3%mat nominal output
power.
 W. Li, Y. Zhao, Y. Deng, and X. He proposed A novel interleaved high step-
up converter with voltage multiplier cell is proposed in this paper to avoid the
extremely narrow turn- OFF period and to reduce the current ripple, which flows
through the power devices compared with the conventional interleaved boost converter
in high step-up applications. Interleaved structure is employed in the input side to
distribute the input current, and the voltage multiplier cell is adopted in the output side
to achieve a high step-up gain. The voltage multiplier cell is composed of the secondary
windings of the coupled inductors, a series capacitor, and two diodes. Furthermore, the
switch voltage stress is reduced due to the transformer function of the coupled
inductors, which makes low-voltage-rated MOSFETs available to reduce the
conduction losses. Moreover, zero-current-switching turn- ON soft switching
performance is realized to reduce the switching losses. In addition, the output diode
turn- OFF current falling rate is controlled by the leakage inductance of the coupled
inductors, which alleviates the diode reverse recovery problem. Additional active
device is not required in the proposed converter, which makes the presented circuit easy
to design and control. Finally, a 1-kW 40- V-input 380-V-output prototype operating at
100 kHz switching frequency is built and tested to verify the effectiveness of the
presented converter.
 Y. Zhao, W. Li, Y. Deng, and X. He A novel isolated zero-voltage-transition
(ZVT) boost converter with coupled inductors is proposed in this paper to satisfy the
high power, high step-up, and isolated requirements. In the proposed converter, the
input-parallel configuration is adopted to share the large input current and to reduce the
conduction losses, while the output-series structure is employed to double the output
voltage gain. Consequently, a transformer with a low turns ratio can be applied, which
makes the transformer design and optimize easily. Moreover, the active clamp circuits
are employed to reduce the switch voltage stress and to recycle the energy stored in the
leakage inductance. The ZVT is achieved during the whole switching transition for all
the active switches, so the switching losses can be reduced greatly. Furthermore, the
diode reverse-recovery problem is partly solved due to the leakage inductance. In
addition, the magnetic integration technology is applied to improve the efficiency and
to reduce the magnetic component size. Finally, a 48-V input 380-V output 1-kW

prototype operating with 100-kHz switching frequency is built and tested to

demonstrate the effectiveness of the proposed converter.
 W. Li, Y. Zhao, J. Wu, and X. He proposed the concept of winding-cross-
coupled inductors (WCCIs) and voltage multiplier cells is integrated to derive a novel
interleaved high step-up converter in this paper. The voltage gain is extended and the
switch voltage stress is reduced by the WCCIs and the voltage multiplier cells in the
presented circuit, which minimizes the peak current ripple of the power devices and
makes low-voltage MOSFETs with high performance available in high step-up and
high output voltage applications. Moreover, the output diode reverse-recovery problem
is alleviated by the leakage inductance of the WCCIs, which reduces the reverse-
recovery losses. Zero current switching (ZCS) turn-on is realized for the power
switches to reduce the switching losses. Furthermore, the voltage spikes on the
MOSFETs are clamped and the leakage energy is recycled by the voltage multiplier
cells, when the switch turns off. A 1 kW prototype with 35–45 V input and 380 V
output operating at 50 kHz switching frequency is built and tested to verify the
significant improvements of the proposed converter.
2.1 Necessity
Boost converter is one of the most important and widely used devices of modern
power applications. Till now Boost Converters with snubber circuits are used where
switching losses are dissipated in external resistors leading to higher switching losses
and low overall efficiency. Modern Boost converters use IGBT switches which have
the following properties such as high current and voltage rating, fast switching, low
power gate drive. These properties lead to following disadvantages such as at high
blocking voltage the switching frequency is reduced to low values and due to high
switching speed, the rate of change of current and voltages become high. Boost
converter with auxiliary resonant circuit can overcome these problems by either forcing
current (ZCS) or voltage (ZVS) or both of them to zero. By adopting this topology the
total efficiency of the system is improved. As boost converters are widely used these
days therefore large amount of power is saved from wastages.

2.2 Theme
Aim of this project is to design boost converter with an auxiliary resonant

circuit. This dissertation work consists of study of conventional boost converter. In this
work of conventional boost converter and modified boost converter topology designed
by simulation model. Work also consist hardware prototype of ZVT-ZCT-PWM Boost
converter system.
2.3 Objectives
The objectives of this dissertation are as follows:

 To design Simulink model of boost converter.
 To design prototype hardware model of ZVT-ZCT-PWM Boost converter.
2.4 Organization of Report
Chapter 1: Presents the introduction of different type of hard switching converter

system
Chapter 2: Presents a brief review of the work (literature survey) carried out by
various authors so far and related to research and various new developed concepts. As
well as the Necessity, Objective, and Theme. Finally, the outline of the dissertation
work is presented.
Chapter 3: Presents used topology of conventional boost converter and various types
of power electronics converter.
Chapter 4: presents soft switching technique and operating modes of proposed ZCT-
ZVT-PWM Boost converter.
Chapter 5: It contains the MATLAB simulation of the proposed soft switching Boost
converter with auxiliary resonant circuit and result is discussed and hardware design of
proposed ZCT-ZVT-PWM Boost converter.
Chapter 6: It concludes the work done under this project. The future work that can be
done under this project to improve the efficiency further is also discussed. The future
work that can be undertaken is discussed.

CHAPTER 3
CONVERTER TOPOLOGIES
3.1 Power Electronics
Power electronics is the field of electrical engineering related to the use of semiconductor
devices to convert power from the form available from a source to that required by a
load. The load may be AC or DC, single-phase or three-phase, and may or may not need
isolation from the power source. The power source can be a DC source or an AC source
(single-phase or three-phase with line frequency of 50 or 60 Hz), an electric battery, a
solar panel, an electric generator or a commercial power supply. A power converter takes
the power provided by the source and converts it to the form required by the load. The
power converter can be an AC-DC converter, a DC-DC converter, a DC-AC inverter or
an AC-AC converter depending on the application.
3.2. Switches
An important part of any power electronic converter is its semiconductor device. The
semiconductor devices that are typically used in switch-mode power converter are
diodes, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs
(Insulated Gate Bipolar Transistors). Diodes can be considered to be uncontrolled
switches as they are on and conduct current when they are forward-biased and are off
when they are reverse-biased. Current cannot be interrupted in a diode and some external
action must be taken to the diode in order to divert current away from it and make it
reverse biased. MOSFETs and IGBTs are controllable switches as they can be turned on
and off by feeding a signal to their gate then removing it. The basic characteristics of
each device are discussed in further detail below.
3.2.1 Power MOSFETs

A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor
(MOSFET) designed to handle significant power levels and is typically depicted as
shown in Figure 3.1. It has three terminals - a gate, a drain, and a source. The switch is
on when current is fed to the gate and its gate-source capacitance is charged to a
threshold voltage Vth, which creates a field that opens the drain-source channel and
allows current to flow from drain to source. It has an isolated gate and current does not
have to be continuously fed to the gate to keep the device on; the device is on as long as

the voltage across the gate-source capacitance Vgs is greater than Vth and the field that
keeps the drain-source channel open exists. A MOSFET has an intrinsic parallel body
diode and can conduct reverse current even when the switch is off. The MOSFET has
three main regions of operation: triode, saturation, and cut-off. Since controllable
semiconductor devices in almost all power electronics applications function as switches
that are either fully on or fully off, a MOSFET in a power converter operates either in the
triode region (fully on) or in the cut-off region (fully off). When the power MOSFET is
in the on-state, however, it is not an ideal switch; it acts as if there is a resistor, Rds(on)
(drain to source on-state resistance), between its drain and source terminals. This Rds(on)
resistance contributes to energy loss when current flows through the device; the technical
term for this energy loss is conduction loss. Compared to other power semiconductor
devices such as the IGBT, the MOSFET’s main advantage is its high switching speed.
MOSFETs can be turned on and off very quickly and are the fastest semiconductor
devices in terms of switching because they are majority carrier devices and their
operation is based on the generation and removal of an electric field,. They are the
devices of choice in low power applications as their fast switching characteristics allows
them to be implemented in converters that operate with high switching frequencies
(>100kHz) to reduce the size of their magnetic elements (inductors, transformers). They
are not suitable for higher power applications due to their Rds(on) and the conduction
losses created by this parameter.
Fig. 3.1- N-Channel power MOSFET symbol

3.3 Basic of DC-DC Converter

A chopper circuit is a static device that converters fixed DC to a variable DC
output voltage directly.
Fig. 3.2- Elementary chopper circuit

A chopper is a DC equivalent of an AC transformer since they behave in an
identical manner. As chopper involve one step conversion, these are more efficient. The
power semiconductor devices used for a chopper circuit can be forced commutated
thyristor, power BJT, power MOSFET, GTO or IGBT. These devices can be considered
as a switch.
A boost converter is a switch mode DC-DC converter in which the output is
greater than the input voltage. It is also called as step up converter. The name step up
transformer the input voltage is stepped up to a level greater than the input voltage.
3.3.1 Principle of Chopper Circuit-
• Chopper is a high speed on/off semiconductor device.

• It connects and disconnect source to load at a fast speed.
• During the period Ton chopper is on and load voltage is equal source
voltage Vs.
• During the period T off chopper is off and load current flows through the
freewheeling diode D. As a result load terminals are short circuited by D.
And load voltage is therefore Zero during T off.

Fig. 3.3 Output voltage and current waveform of chopper circuit
V = average load voltage

T T
V = .V = V = KV … … … … … … … … . (1)
T +T T
T=T +T = Chopping period … … … … … … … . . . (2)
T
K= = Duty cycle … … … … … … … … … … … . . … … (3)
T
V = T . f. V … … … … … … … … … . (4)
1
f= = Chopping frequency … … … … … … … … … . (5)
T
Where,
T = Turn on time
T = Turn off time
V = Supply Voltage

3.4 Switching Methods for DC-DC Converter
There are different types of switching methods, they are

1. Hard switching, and
2. Soft switching
Fig. 3.4- Hard switching and soft switching
3.4.1 Hard Switching Topologies
Converters which are based on traditional switching are known as hard switching
converter. During Turn ON period the voltage across the switch tends to increase and the
current tends to decrease, which results in some switching losses. Similarly during turn
OFF period the voltage tends to increase and the current tends to decrease across the
switch. Again it leads to some switching losses.
There are many circuit configurations of these traditional hard switching
configurations. They are discussed below.
A. Buck Converter
B. Boost Converter
C. Buck – Boost Converter
D. Cuk Converter
E. SEPIC Converter
F. Full Bridge Converter

A. Buck Converter:
Fig. 3.5- Circuit diagram of buck converter
In Step down converter or Buck converter, the average output voltage Vo is less
than the input voltage Vs. when the switch in turned ON, the voltage across the load is
Vs. the current flows through the circuit as shown in the figure 3.5. When the switch is
turned OFF, the current direction is same as before, but the voltage across the load is
zero. The power flows from source to load; hence the output voltage is less than the
source voltage, which can be determined by the duty cycle of the GATE pulse to the
switch.
The load current is smoothening by the inductor and the capacitor makes the
output voltage ripple free. Hence a constant output voltage is obtained. Inductor voltage
and current waveforms for a buck converter are as shown in figure 3.6 below.

Fig. 3.6- Steady-state inductor voltage and current waveform, buck converter
B. Boost Converter:
Fig. 3.7- Circuit diagram of boost converter
In step up converter or Boost converter, the average output voltage Vo is more

than the input voltage Vs. When the switch is turned ON, current through the inductor
increases and the inductor starts to store energy. And when the switch is made OFF, the
stored energy in the inductor starts to dissipate. The current is forced to flow through the
Diode and load during the turn off time. As a result the voltage across the load exceeds
the source voltage.

Fig. 3.8- Steady-state inductor voltage and current waveform, boost converter
C. Buck- Boost Converter:
Fig. 3.9- Circuit diagram of buck-boost converter
In Buck-Boost converter the output voltage can be either greater than or less than
the input voltage depending upon the duty cycle. When the switch is turned ON, the
inductor starts storing energy, and when the switch is made OFF, the stored energy is
supplied to the capacitor and load. So the output voltage can be varied by the duty cycle
of the GATE pulse of the switch. The steady state inductor current and voltage waveform
is shown in figure 3.10 below,
Fig. 3.10- Steady-state inductor voltage and current waveform, buck-boost

converter

D. Cuk Converter:
Fig. 3.11- Circuit diagram of cuk converter

This is similar to Buck-Boost converter. But in this case the main energy storing
element is capacitor, unlike the inductor in case of Buck-Boost converter. The capacitor
is charged during the turn ON period, through the inductor L1 and discharges the stored
energy in the turn OFF period through the inductor L2.
E. SEPIC Converter:
Fig. 3.12- Circuit diagram of SEPIC converter

Single Ended Primary Inductor Converter (SEPIC) is a DC – DC converter whose

output voltage is greater than, equal to or less than the input voltage. This is similar to
Buck-Boost converter with an advantage of generating non-inverting output. Energy is
exchanged between the inductor and capacitor to convert one voltage to another. During
the turned ON period, the inductor L2 is charged by the capacitor C1. And during turned
OFF period, the capacitor is charged by the inductor L1. Hence the power is transferred
from inductor L1 and L2 to the load during the OFF time period.
Comparison of the above mentioned hard switching converters are given in the
Table 3.1.
Table 3.1: Hard switching dc-dc converter topologies
DC –DC Number of Range of Average Relationship

CONVERTER Switches Average Output Voltage between the duty
Output cycle and Output
Voltage Voltage
Buck Converter One 0-Vi D Vin Linear
Boost Converter One Vi -∞ D Non-Linear

Vin
1−D
Buck-Boost Two 0-Vi and Vi - D Non-Linear

∞ − Vin
Converter 1−D
Cuk Converter One 0-Vi and Vi - D Non-Linear

− Vin
∞ 1−D
SEPIC Converter One 0-Vi and Vi - Non-Linear

∞ − Vin
1−D

CHAPTER 4
SOFT SWITCHING OPERATION OF PROPOSED CONVERTER
4.1 Soft Switching Topologies
A power converter can be operated with high switching frequencies only if the
problems of switching losses can be overcome; this can be done using "soft-switching"
techniques. This term "soft-switching" refers to various techniques that make the
switching transitions more gradual than just simply turning a switch on or off (which is
referred to as "hard-switching" in the power electronics literature) and that force either
the voltage or current to be zero while the switching transition is being made. Switching
losses are reduced as there is no overlap of switch voltage and switch current during a
switching transition as one of the two is zero during this time. Soft-switching techniques
are either zero-voltage switching (ZVS) techniques or zero-current switching (ZCS)
techniques.
Soft switching techniques can reduce the switching losses and Electromagnetic
interference by putting some stress on the devices. When either current or voltage is zero
during the turn ON or turn OFF period, then the product of the voltage and current
becomes zero, which leads to zero power loss. Hence the switching loss can be
eliminated and the device can operate at high switching frequency. Size and weight of
the device is reduced as the heat sink is not required.
4.2 Types of Soft Switching Techniques
4.2.1 Zero Voltage Switching (ZVS)
In this technique, the switching takes place at zero voltage condition
Fig. 4.1- Zero voltage switching (ZVS)

ZVS is used during turn ON of the device. Initially the main switch is OFF and
the auxiliary switch is ON. So the current through the main switch is zero but the voltage
is not zero. During the turn ON, voltage is made zero and current is given some time
delay so that the current will begin to rise after the voltage is zero.
4.2.2 Zero Current Switching (ZCS)
In this technique, the switching takes place at zero current conditions
Fig. 4.2- Zero current switching (ZCS)

It is used at turning OFF of the device. Initially the device is conducting. So the
current through the device is not zero but the voltage across it is zero. In ZCS condition,
the current is made to zero and the voltage is allowed to rise after the current becomes
zero.
The soft switching phenomenon known as zero- current switching (ZCS) & zero-
voltage switching (ZVS) can lead to reduce switching loss. When the turn-on & turn-off
transitions of a semiconductor switching device coincides with the zero crossing of
applied waveforms. In converters containing MOSFETs & diodes, zero-voltage
switching mitigates the switching loss otherwise caused by diode recovered charge &
semiconductor output capacitance. Zero current switching can mitigates the switching
loss caused by current tailing in IGBTs & by stray inductances. Zero-current switching
can also be used for communication of SCRs. In the majority of applications, where
diode recovered charge & semiconductor output capacitances are the dominant sources
of PWM switching loss, zero voltage switching is preferred [5]. These types are ZVS and
ZCS for full wave topology.

4.3 Proposed ZVT-ZCT-PWM Boost Converter
The block diagram of proposed ZVT-ZCT-PWM-Boost Converter is shown in figure 3.6.
Fig. 4.3 Circuit Scheme of Proposed ZVT-ZCT-PWM boost converter
The circuit scheme of the proposed ZVT-ZCT-PWM boost converter circuit is

shown in Fig. 4.3. In this circuit, Vi is input voltage source, Vo is output voltage, LF is
main inductor, CF is output filter capacitor, S1 is main switch and DF is main diode. The
main switch consist of a main transistor T1and its body diode D1 . The snubber circuit
shown with dashed line is formed by snubber inductor Ls , a snubber capacitor Cs and
auxiliary switch S2. T2 and D2 are the transistor and its body diode of the auxiliary
switch, respectively. The capacitor Cr is assumed to be the sum of the parasitic capacitor
of S1 and the other parasitic capacitors incorporating it. In the proposed converter, it is
not required to use an additional Cr capacitor.
During one switching cycle, the following assumptions are made in order to
simplify the steady-state analysis of the circuit shown in Fig. 4.3. Input and output
voltages and input current are constant, and the reverse recovery time of DF is taken into
account. In the equations, semiconductor devices and resonant circuits are assumed ideal
for simplification.

4.4 Operating modes of the converter
Mode 1: At the beginning of this mode, the main transistor T1 and auxiliary transistor
T2 are in the off state. The main diode DF is in the ON state and let the beginning of
mode 1 be the OFF state of the conventional boost converter. Let the input current flows
through the main diode. So in the beginning, IT1=0; ILS= IT2 =0; IDF =Ii ; and IDF =V0.
Fig. 4.4(a) Mode 1

The mode 1 begins by applying a turn on signal to the gate of the auxiliary
transistor T2. Now a resonance starts between the snubber inductance Ls and the snubber
capacitance Cs. Due to the resonance, T2 current rises and DF currents falls
simultaneously. The rate of rise of the T2 current is limited by the snubber inductance Ls
that connected in series with the auxiliary switch. So the turn ON of the auxiliary switch
provided with ZCS. At the end of this mode, the snubber capacitance voltage VCs
charged to VCs1 .IT2 reaches Ii and IDF falls to zero. When IDF reaches –Irr, DF is turned
OFF and this stage finished. So in mode 1, T2 turns ON with zero voltage switching and
DF turned OFF with nearly zero voltage switching and zero current switching.
Mode 2: At the beginning of this mode, IT1=0; ILs= IT2=Ii+ Irr; IDF=0;VCr=V0. The main
diode DF and main transistor T1 are in the OFF state. The auxiliary transistor T2 is in the
ON state and that conduct the sum of the input current Ii and reverse recovery current of
DF.

The mode begins with a resonance between the parasitic capacitor Cr, snubber
capacitance Cs and the snubber inductance Ls. This mode finishes with the parasitic
capacitance voltage VCr becomes zero. Thus the energy stored in the parasitic capacitor
Cr will be completely transferred to the resonance circuit. At the end of this mode, diode
D1 turns ON with nearly zero voltage switching. At the end of this mode VCs=VCs2.
Fig. 4.5(b) Mode 2
Mode 3: Just after the diode D1 turned ON, i.e. at the beginning of this mode, IT1=0; ILs=
IT2= ILS2, IDF=0 , VCr=0 and VCs=VCS2.
Fig. 4.6(c) Mode 3

In this mode, the resonance between the snubber inductance LS and the snubber
capacitance Cs continuous. Here the diode D1 is turned ON and that will conduct the
excess of the snubber inductance current from the input current. This interval is called
the ZVT duration of the main transistor. At the end of this mode, a control signal is
applied to the gate of the main transistor T1. The diode D1 is kept turned ON in order to
provide ZVT turn ON of T1 .This mode ends with the snubber inductance current falls to
input current and the diode D1 turned OFF under ZCS.
Mode 4: This mode begins when the diode D1 is turned OFF. At the beginning of this
mode , IT1=0; ILs= IT2= ILS3=Ii, IDF=0, VCr=0 and VCs=VCS3.
Fig. 4.7(d) Mode 4

The main transistor T1 turns ON with ZVT and its current starts to rise. The
resonance between snubber inductance Ls and snubber capacitor Cs continuous. At the
end of this mode, the main transistor current reaches to Ii and ILs become zero. This mode
ends by removing the control signal of auxiliary transistor.
Mode 5: At the beginning of this mode, the auxiliary transistor T2 is turned OFF under
ZCT. And at the beginning, IT1= Ii, ILs= IT2= ILS4=0, VCs=VCS4, VCr=0 and IDF=0. This
mode begins with the turn ON of the diode D2 with zero current switching and its current
starts to rise. The resonance between snubber inductance Ls and snubber capacitance Cs
continuous in this mode.

Fig. 4.8(e) Mode 5

The resonance between snubber inductance Ls and snubber capacitance Cs continuous in
this mode. ILs become negative and the current through the main transistor current
becomes higher than the input current. At the end of this mode, the main transistor
current decreases to input current level and ILs becomes zero. Then ID2 becomes zero and
D2 turned OFF under ZCS at the end of this mode.
Mode 6: At the beginning of this mode IT1= Ii, ILs= IT2= ILS4=0, IDF=0 ,
VCs=VCS5 and VCr=0
Fig. 4.9(f) Mode 6

In this mode, the main transistor continuous to conduct the input current Ii and in this
case, the snubber circuit is not active. This mode can be stated as the ON state of the
conventional boost converter. The ON state duration can be controlled by the PWM
control.
Mode 7:At the beginning of this mode IT1= Ii, ILs= IT2=0, IDF=0, VCs=VCS6,and VCr=0.
Fig. 4.10(g) Mode 7

This mode begins by applying a control signal to the gate of the auxiliary transistor T2 .
Then a new resonance between snubber inductance Ls and snubber capacitor Cs starts. In
this mode, the auxiliary transistor T2 turned ON with ZCS. At the end of this mode, the
current through the auxiliary transistor current reaches input current level and the main
transistor current becomes zero.
Mode 8: At the beginning of this mode, IT1= 0, ILs= IT2= Ii, IDF=0, VCs=VCS7 and
VCr=0. This mode begins when T1 current falls to zero so that D1 turns ON with ZCS.
T1 can be turned OFF after the turn ON of D1 so that T1 can be turned OFF under ZCS
and ZVS. The resonance between Ls and Cs continuous in this mode also. This mode
ends by the turn OFF of D1.

Fig. 4.11(h) Mode 8

Mode 9: This mode begins after the turn OFF of D1 under ZCS. At the beginning of this
mode, IT1= 0, ILs= IT2= ILS8= Ii – Irr, IDF=0, VCs=VCS8= VCs=VCS0 and VCr=0.
Fig. 4.12(i) Mode 9

Now a resonance between parasitic capacitor Cr , snubber inductance Ls and snubber
capacitor Cs starts and ILS falls to zero and the capacitor Cr charged from 0 to VCS8. At

the end of this mode, the control signal from the auxiliary transistor T2 is removed. So
that, T2 is turned OFF under ZCS.
Mode 10: At the beginning of this mode, IT1= 0, ILs= IT2= ILS9=0, IDF=0, VCs=VCS9=
VCS0 and VCr= VCS8
Fig. 4.13(j) Mode 10

During this mode, the parasitic capacitor Cr is charged linearly under the input current.
At the end of this mode, voltage across Cr reaches the output voltage V0 and the main
diode DF is turned ON under ZVS. This mode finishes.
Mode 11: At the beginning of this mode, IT1= 0, ILs= IT2 =0, IDF= Ii, VCs = VCS0, and
VCr= V0.
Fig. 4.14(k) Mode 11

This mode can be stated as the OFF state of the conventional boost converter. During this
mode, the main diode DF continuous to conduct the input current Ii, and the snubber
circuit is not active. The duration of this mode can be controlled by the PWM control.
This is the end of one switching cycle. After this another switching cycle starts.

CHAPTER 5
PERFORMANCE ANALYSIS
5.1 Analysis of Proposed Converter
Fig. 5.1 Circuit Diagram of Boost Converter with Auxiliary Resonant Circuit
The above proposed boost converter with auxiliary resonant circuit is simulated in
MATLAB-SIMULINK. The values of the circuit parameters are given below:
Table 5.1: Circuit Parameter
Input voltage (Vin) 150 V
Switching Frequency (fsw) 30 KHz
Main Inductor (LF) 160 μH
Resonant Inductor (Ls) 10 μH
Parasitic Capacitor (Cs) 1000 nF
Resonant Capacitor (Cr) 1200 μF

5.2 Simulation of Proposed Boost Converter
Fig. 5.2 Overall MATLAB-Simulink Model

The proposed Boost Converter has two switches namely main switch and auxiliary
switch. The main switch has a duty ratio of 0.61 while that of auxiliary switch is 0.21. The
main switch duty ratio determines the average output voltage. The function of auxiliary
switch is to enable the main switch to operate soft switching. First the auxiliary switch is
turned ON then the main switch in turned ON after some time delay. The resonant loop of the
resonant inductor (LS) and resonant capacitor (Cs) is completed by the turning ON of the
auxiliary switch. By the help of resonance the auxiliary switch is made to operate at ZCS. As
the snubber capacitor is discharged the current of the resonant loop flows through the anti-
parallel diode of the main switch. By turning ON the main switch the ZVS is assured. As the
resonant capacitor is fully discharged the auxiliary switch is turned OFF.
The PWM signal of the main switch is given some delay compared to auxiliary
switch. The phase difference is obtained by delaying the carrier waveform. The main switch
is turned ON while the auxiliary switch is still in the ON state.
Fig. 5.3: Block Diagram of PWM Generator

5.3 Simulation Results:
Fig. 5.4: Output Voltage Vs Time across main switch while Snubber Ciruit
disconnected
Fig. 5.5: Output Current Vs Time across main switch with Snubber Circuit
Result shown in Fig. 5.4 & 5.5, output voltage and current waveform of main switch
while Snubber circuit not connected to circuit and with connection. It shows the reduction in
losses from main switch.

Fig. 5.6: Output Voltage with input 150 V while Snubber Circuit Disconnect
Output Voltage of conventional boost converter
=
1−
= 214.28
Fig. 5.7: Output Voltage with input 150 V with Snubber Circuit

Output voltage of proposed boost converter,
= ( )
1−
= 244
Table 5.2: Simulink Output

Input Observed output across load Calculated output voltage
150 246.4 234.61
175 287.6 273.7
200 328.8 312.8
225 370 351.9
250 411.2 391.02

5.4 Hardware Implementation
5.4.1 Block Diagram of Hardware Prototype
Aim of this work is to boost the output voltage by using ZVT-ZCT- technique. The
proposed system includes a snubber circuit, which is used to suppress voltage and current
stress from main switch. The hardware system consists of two MOSFET switches. A 12 V
and 5 V power supply circuit are used to supply power to mosfet SWITCHES AND
Microcontroller circuit. The Microcontroller (16F877A) circuit is used to supply pulse to
MOSFET switches. A bridge rectifier circuit used to convert AC to DC voltage for proposed
boost converter system.
AC
Power Supply
Supply
Microcontroller
PIC
AC Opto-coupler
Supply 4N25
Four Boost DC
Bridge Converter Output
Rectifier
Fig. 5.8- Block diagram of hardware implementation of ZVT-ZCT-PWM Boost

converter
This is the hardware implementation of ZVT-ZCT-PWM Boost Converter. It consists of
 Power Supply
 Microcontroller
 Isolator
 Four Bridge Rectifier
 Transformer
 Rectifier
5.4.2 Hardware Layout of ZVT-ZCT-PWM Boost Converter
Fig. 5.9 Hardware set up of ZVT-ZCT-PWM Boost converter
Supply voltage (230V AC) is rectified and stepped down to 5V. Programming is done in the
microcontroller to trigger the MOSFET with proper firing angle or time period. Isolator i.e.
here photo-optocoupler is used to protect the MOSFET those are used in the converter circuit.
Bridge rectifier circuit used to convert AC input supply to DC. The DC output is used as
input for proposed boost converter.
5.4.3. Power Supply
Fig. 5.10: 5 V DC Supply

Power supply is required to provide power to driver circuit of converter. And also the
microcontroller requires basically 5-V DC supply. This supply is generated from a step-down
transformer connected to the main AC supply, which is rectified by using rectifier. The
output of rectifier is filtered using capacitor.
For getting +5 volts supply, the + 12 volts supply from power supply output is taken. And it
is given to 7805. The minimum input to 7805 is +7 Vdc and Maximum input is + 35 vdc.
And we are giving + 12 Vdc as input to the 7805. Therefore the output of the 7805 is constant
regulated +5 Vdc.
Fig. 5.11 12 V DC Supply
7812 is constant regulator giving 12 V supply required for gating drive circuit.
5.4.4 Microcontroller (PIC 16F877A):

A microcontroller is a complete microprocessor system built on a single IC.
Microcontrollers were developed to meet a need for microprocessors to be put into low cost
products. Building a complete microprocessor system on a single chip substantially reduces
the cost of building simple products, which use the microprocessor's power to implement
their function, because the microprocessor is a natural way to implement many products. This
means the idea of using a microprocessor for low cost products comes up often. But the
typical 8-bit microprocessor based system, such as one using a Z80 and 8085 is expensive.
Both 8085 and Z80 system need some additional circuits to make a microprocessor system.
Each part carries costs of money. Even though a product design may requires only very
simple system, the parts needed to make this system as a low cost product.

To solve this problem microprocessor system is implemented with a single chip

microcontroller. This could be called microcomputer, as all the major parts are in the IC.
Most frequently they are called microcontroller because they are used to perform control
functions. The microcontroller contains full implementation of a standard
MICROPROCESSOR, ROM, RAM, I/O, CLOCK, TIMERS, and also SERIAL PORTS.
The microcontroller that has been used for this project is from PIC series. PIC
microcontroller is the first RISC(Reduced Instruction Set Computing) based microcontroller
fabricated in CMOS (complementary metal oxide semiconductor) that uses separate bus for
instruction and data allowing simultaneous access of program and data memory. The main
advantage of CMOS and RISC combination is low power consumption resulting in a very
small chip size with a small pin count. The main advantage of CMOS is that it has immunity
to noise than other fabrication techniques.
Various microcontrollers offer different kinds of memories. EEPROM, EPROM, FLASH etc.
are some of the memories of which FLASH is the most recently developed. Technology that
is used in pic16F877A is flash technology, so that data is retained even when the power is
switched off. Easy Programming and Erasing are other features of PIC 16F877A.
PIC16F877A is a 8 bit microcontroller with 8K X 14 words flash Program memory and

368 X 8 of RAM and 256 X 8 of EEPROM and many other extra peripherals. The
PIC16F877A mcu is based on reduced instruction set computer (RISC) architecture.
It has following features:
1. Program memory – 8K X 14 words flash
2. It contains only 35 instructions.
3. Data memory - 368 X 8 of RAM and 256 X 8 of EEPROM
4. It has 3 timers and WDT
5. 5 ports are available.
6. 8 channel 10 bit ADC
7. Brown out Reset (BOR),Power on Reset(POR)
Power consumption is very low, less than 20 ma at 5 V and 4MHz

 MPLAB IDE
MPLAB IDE is a Windows-based Integrated Development Environment for the
Microchip Technology Incorporated PIC microcontroller (MCU) and dsPIC digital signal
controller (DSC) families. In the MPLAB IDE, we can:
i) Create source code using the built-in editor.
ii) Assemble, compile and link source code using various language tools. An
assembler, linker and librarian come with MPLAB IDE. C compilers are available
from Microchip and other third party vendors.
iii) Debug the executable logic by watching program flow with a simulator, such as
MPLAB SIM, or in real time with an emulator, such as MPLAB IDE. Third party
emulators that work with MPLAB IDE are also available.
iv) Make timing measurements.
v) View variables in Watch windows.
 Pulse-Width-Modulation (PWM) in Microcontroller:
The Pulse-Width-Modulation (PWM) in microcontroller is used to control duty cycle of
gate pulse of MOSFET. PWM is an entirely different approach to controlling the gate pulse
of MOSFET. Power is supplied to the MOSFET in square wave of constant voltage but
varying pulse-width or duty cycle. Duty cycle refers to the percentage of one cycle during
which duty cycle of a continuous train of pulses. Since the frequency is held constant while
the on-off time is varied, the duty cycle of PWM is determined by the pulse width. Thus the
power increases duty cycle in PWM.
The duty cycle is determined by using the expression,
% Duty cycle = ×100

Fig.5.12 Circuit diagram of micro-controller.
5.4.5 Isolation Circuit (Opto-coupler)
Figure 5.14- Internal Structure of opto-Coupler

The 4N137 family is an industry standard single channel phototransistor coupler. This
family includes the 4N25, 4N26, 4N27, 4N28. Each opto-coupler consists of gallium arsenide
infrared LED and a silicon NPN phototransistor. It is mostly applicable in AC mains
detection, Reed relay driving, Switch mode power supply feedback, Telephone ring
detection, Logic ground isolation, Logic coupling with high frequency noise rejection. It has
specialization such as Isolation test voltage 5000 VRMS, Interfaces with common logic
families, Input-output coupling capacitance < 0.5 pF.
When any variations in input side voltages, it can produce changes in the LED
current, which changes the current through the phototransistor. Thus a signal voltage is
coupled from the input circuit to the output circuit. The circuit arrangement with internal
structure for the opto-coupler is as shown in figure 4.15. The big advantage of an opto-
coupler is the electrical isolation between the input and output circuits.
5.4.6 Liquid Crystal Display (LCD) RG1602A:
Liquid crystal displays (LCDs) have materials, which combine the properties of both
liquids and crystals. Rather than having a melting point, they have a temperature range within
which the molecules are almost as mobile as they would be in a liquid, but are grouped
together in an ordered form similar to a crystal. An LCD consists of two glass panels, with
the liquid crystal material sand witched in between them. The inner surface of the glass plates
are coated with transparent electrodes which define the character, symbols or patterns to be
displayed polymeric layers are present in between the electrodes and the liquid crystal, which
makes the liquid crystal molecules to maintain a defined orientation angle. One each
polarizes are pasted outside the two glass panels. These polarizes would rotate the light rays
passing through them to a definite angle, in a particular direction. When the LCD is in the off
state, light rays are rotated by the two polarizes and the liquid crystal, such that the light rays
come out of the LCD without any orientation, and hence the LCD appears transparent.
When sufficient voltage is applied to the electrodes, the liquid crystal molecules would
be aligned in a specific direction. The light rays passing through the LCD would be rotated
by the polarizes, which would result in activating / highlighting the desired characters. The
LCD’s are lightweight with only a few millimeters thickness. Since the LCD’s consume less
power, they are compatible with low power electronic circuits, and can be powered for long
durations.
Crystalonics dot–matrix (alphanumeric) liquid crystal displays are available in TN, STN
types, with or without backlight. The use of C-MOS LCD controller and driver ICs result in

low power consumption. These modules can be interfaced with a 4-bit or 8-bit
microprocessor /Micro controller.
The built-in controller IC has the following features:
 Correspond to high speed MPU interface (2MHz).
 80 x 8 bit display RAM (80 Characters max).
 9,920-bit character generator ROM for a total of 240 character fonts. 208 character
fonts (5 x 8 dots) 32 character fonts (5 x 10 dots).
 64 x 8 bit character generator RAM 8 character generator RAM 8 character fonts (5 x
8 dots) 4 characters fonts (5 x 10 dots).
 Programmable duty cycles.
Fig. 5.14 LCD display
Fig. 5.15 LCD display showing result
5.4.7 Power MOSFET

There are many types of transistors. A type of transistor capable of fast-switching speed
and low-switching losses is the so-called Metal-Oxide Semiconductor Field Effect Transistor
(MOSFET) which is gate controlled by electric field (voltage) rather than current. This is
achieved by capacitive coupling of the gate to the device. Fig.5.8 & 5.9 shows its structure
and equivalent circuit. MOSFET is extensively used for low power (kilowatts) applications
and is unsuitable for high power. However, they are useful devices when in conjunction with
advanced GTOs.

MOSFET can be a pnp or npn device. There is a silicon-oxide (SiO) dielectric layer
between the gate metal and the n+ and p junction. The principal advantage of MOS gate is
that voltage, instead of current, is applied to the gate with respect to the source to fully or
partially block the device by creating space charge around the tiny gate areas. When the gate
is given a sufficiently positive voltage with respect to the emitter, the effect of its electric
field pulls electrons from the n layer into the p layer. This opens a channel closest to the gate,
which in turn allows the current to flow from the drain (collector) to the source (emitter).
MOSFET is heavily doped on the drain side to create an n+ buffer below the n- drift
layer. This buffer prevents the depletion layer from reaching the metal, evens out the voltage
stress across the n- layer, and also reduces the forward voltage drop during conduction.
Provision of the buffer layer also makes it an asymmetrical device with rather low reverse
voltage capability. MOSFETs require low gate energy, and have very fast switching speed
and low switching losses. Unfortunately MOSFETs have high forward on-state resistance,
and hence high on-state losses, which makes them unsuitable for power devices, but they are
excellent as gate amplifying devices. MOSFETs have similar forward current-voltage
characteristics, as that for a transistor; however, the base current is replaced by the gate
voltage.
Fig.5.16 Symbol of Power MOSFET Fig.5.17 Structure of Power MOSFET

Advantages of Power MOSFET over other switching devices:
1. Power MOSFET is most suitable for medium voltage and current, typically 500V,
200A.

2. Higher switching frequency (up to 100 kHz), therefore faster response.
3. It is a voltage controlled device.
4. Positive temperature coefficient of resistance (TCOR). This makes parallel

operation of power MOSFET easy.
Such advantages and comparisons are considered for selection of Power MOSFET as switch
for single phase AC to DC bidirectional converter. In this dissertation work the power
MOSFET IRF840B is used. Following are the features of IRF840B.
 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V.

 Low gate charge ( typical 41 nC) .
 Fast switching.
 100% avalanche tested.
 Improved dv/dt capability.
5.5 Design parameter of boost converter
For designing boost converter considered system having required output voltage 36 V. The
DC-DC Switching Boost Converter will take a 12 Volt DC voltage supply with 10%
tolerance and deliver 40 Volts to the load. The maximum current delivered to the load will be
1 A.
Power Output
= 40
Load Resistance
Assuming to be 1 A.
40
= = = 40 Ω
1

Duty Cycle
12
Duty Cycle = 1 − =1− = 0.7
40
Ripple Current
Considered normal frequency
= 10
= 100
D=
0.7 =
100
= 70
= 30
Assuming ripple current is 10% of .
∆ = −
= 1.1
= 6.8
∆ = 0.2
Calculating value of L
∆ =
12
0.2 = ∗ 0.7 ∗ 100
= 4.2

Calculating value of C
∗ ∗
∆ =
Assuming ripple current is 10% of .
= 0.1 ∗ 40
=4
= 40 + 4 = 44
= 40 − 4 = 36
∆ = 44 − 36 = 8
∗ ∗
∆ =
1 ∗ 0.7 ∗ 100 ∗ 10
8=
= 8.75
Snubber Circuit
Considered maximum output voltage 164 V.

Load= 40 W
30 % overshoot considered
Transient voltage =164*1.3=213.2 V
40
= = 0.2439
164
( ) = 0.31
213.2
0.31 = [ ]
1

= 1340
Calculating Inductor value
30 = [1.73 ]
30 = [1.73 ∗ 10 ]
= 17 = 20
5.6 Hardware Results:
Table 5.4: Output Result with snubber cell
Input voltage (V) Output voltage across load (V)
10 35.6
12 40
15 62.2
25 82.9
30 96.1

The output voltage with D1= (1-D)
Table 5.3: Output Result without Snubber cell
Input Voltage (V) Output voltage (V)
10 12.8
12 15.38
15 19.23
20 25.64
25 32..1
30 38.46
These are the input voltage with corresponding output voltage of designed converter system.

The DSO result of output voltage with having input to the circuit is 10V.
Fig. 5.18 Output Voltage when input of rectifier circuit is 10 V

CHAPTER 5
CONCLUSION AND FUTURE SCOPE
6.1 Conclusion
In this thesis, a new soft-switching boost converter using a snubber cell circuit
has been discussed which uses an auxiliary switch with resonant circuit. The soft
switching under the zero-voltage and zero current condition is performed by main and
auxiliary switch using a resonant capacitor and inductor, as does the auxiliary switch.
This thesis has proposed a new ZVT–ZCT- PWM boost converter circuit. Switching
losses, stresses and noise due to circuit parasitic are inherent in the PWM technique, and
these limitations have restricted the PWM converters from operating at higher
frequencies for size, weight reduction and for performance improvement. To minimize
these problems resonant technique were developed. Typically, a resonant converter
incorporates a certain type of resonant network into a PWM topology to shape the switch
voltage/current waveform so that the power switches are commutated with ZVT and
ZCT.
A new snubber circuit proposed for conventional boost converter in order to
reduce losses from switch and to obtain increase in efficiency. The boost converter
operations are analyzed with simulation and hardware prototype. The operation of circuit
is analysed by using MATLAB. Where the losses across switch are minimized by using
snubber circuit and efficiency of converter increased.
6.2 Future Scope

In normal cases the output of PV array is stored in batteries which is low voltage
equipment in order to change this perception multiple PV array can be integrated and
there output can dc voltage can be boosted to higher voltage without producing any
measure loss. There is requirement of changing dc voltage in high voltage laboratories
conventionally this voltage is change by high resistance value rheostat which results into
high I2R loss using this tech we can easily change this phenomenon become lossless one.

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Department of Electrical Engineering, Government College of Engineering, Karad

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2006

ACKNOWLEDGEMENTS
On the submission of our dissertation phase II entitled “Implementation of

ZVT-ZCT-PWM Boost Converter”, we would like to extend our gratitude & our
sincere thanks to our supervisor Prof. P. R. Jadhav, Assi. Professor, Department of
Electrical Engineering for his constant motivation and support during the course of our
work in the last one year. We truly appreciate and value his esteemed guidance and
encouragement from the beginning to the end of this thesis. His knowledge and company
at the time of crisis would be remembered.
We are very thankful to our teachers Prof. V.B.Waghmare, Prof. S.K.Patil and
Prof. S. H. Pawar for providing solid background for our studies and research thereafter.
They have great sources of inspiration to us and we thank them from the bottom of our
hearts.
At last but not least, we would like to thank the staff of Electrical engineering
department for constant support and providing place to work during project period. We
would also like to extend our gratitude to our friends who are with us during thick and
thin.
Vikram S. Rathod
M.Tech II (Electrical Power System)
APPENDIX
Microcontroller Programming:
#include<pic.h>
#include"pic_lcd4.h"
#include"pic_adc.h"
#include<stdlib.h>
#include<math.h>
void interrupt Receiver()
{
}
unsigned char count=0,Vset,Vout,Verr,Vin;
float Vfzy=0;
void main()
{
ADCON1=0x00;
TRISD=0x00;
TRISC=0x00;
TRISA=0xFF;
TRISB=0xFF;
Lcd_Init();
Lcd_Display(0x80,"Vin= ",16);
Lcd_Display(0xC0," Vout= ",16);
PR2 = 0b11110001 ;
T2CON = 0b00000101 ;
CCPR1L = PR2/2 ;
CCP1CON = 0b00001100 ;
CCPR2L = PR2/2 ;
CCP2CON = 0b00001100 ;
while(1)
{

Vin= Adc8_Cha(0);
Vout=Adc8_Cha(1);
Lcd_Decimal(0x85,Vin,3);
Lcd_Decimal(0xc5,Vout,3);
else if(Vout>Vset)
{
Verr=Vout-12;
if(Verr>10 && Vfzy>5) Vfzy-=5.0;
else if(Verr>7 && Vfzy>2) Vfzy-=2.0;
}
CCPR1L=(unsigned char)Vfzy;
}
}
Adc8_Cha(unsigned char);
Adc10_Cha(unsigned char);
unsigned int adc_hbit,adc_lbit;
unsigned int adc_temp,adc_temp0,adc_val1;
unsigned char adc_val,adc_del,adc_j;
Adc8_Cha(unsigned char val)
{
ADFM=0;
adc_del=25;
if(val==0)
{
adc_temp0=0;
for(adc_j=0;adc_j<10;adc_j++)
{
ADCON0=0x00;
ADON=1;
while(adc_del--);
ADCON0 =0x05;

while(ADCON0!=0X01);
adc_temp=ADRESH;
adc_temp0=adc_temp0+adc_temp;
}
}
else if(val==1)
{
adc_temp0=0;
{
ADCON0=0x08;
ADON=1;
while(adc_del--);
ADCON0 =0x0d;
adc_temp=ADRESH;
}
}
else if(val==2)
{
adc_temp0=0;
{
ADCON0=0x10;
ADON=1;
while(adc_del--);
ADCON0 =0x15;
while(ADCON0!=0x11);
adc_temp=ADRESH;
}
}
else if(val==3)

{
adc_temp0=0;
{
ADCON0=0x18;
ADON=1;
while(adc_del--);
ADCON0 =0x1d;
adc_temp=ADRESH;
}
}
else if(val==4)
{
adc_temp0=0;
{
ADCON0=0x20;
ADON=1;
while(adc_del--);
ADCON0 =0x25;
adc_temp=ADRESH;
}
}
else if(val==5)
{
adc_temp0=0;
{
ADCON0=0x28;
ADON=1;

while(adc_del--);
ADCON0 =0x2d;
adc_temp=ADRESH;
}
}
else if(val==6)
{
adc_temp0=0;
{
ADCON0=0x30;
ADON=1;
while(adc_del--);
ADCON0 =0x35;
adc_temp=ADRESH;
}
}
else if(val==7)
{
adc_temp0=0;
{
ADCON0=0x38;
ADON=1;
while(adc_del--);
ADCON0 =0x3d;
adc_temp=ADRESH;
}

}
adc_val=adc_temp0/10;
return adc_val;
}
Adc10_Cha(unsigned char val)
{
ADFM=1;
adc_del=25;
if(val==0)
{
adc_temp0=0;
{
ADCON0=0x00;
ADON=1;
while(adc_del--);
ADCON0 =0x05;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
adc_temp = adc_lbit + (256*adc_hbit);
}
}
else if(val==1)
{

adc_temp0=0;
{
ADCON0=0x08;
ADON=1;
while(adc_del--);
ADCON0 =0x0d;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
else if(val==2)
{
adc_temp0=0;
{
ADCON0=0x10;
ADON=1;
while(adc_del--);
ADCON0 =0x15;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
else if(val==3)
{
adc_temp0=0;

{
ADCON0=0x18;
ADON=1;
while(adc_del--);
ADCON0 =0x1d;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
else if(val==4)
{
adc_temp0=0;
{
ADCON0=0x20;
ADON=1;
while(adc_del--);
ADCON0 =0x25;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
else if(val==5)
{
adc_temp0=0;
{
ADCON0=0x28;

ADON=1;
while(adc_del--);
ADCON0 =0x2d;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
else if(val==6)
{
adc_temp0=0;
{
ADCON0=0x30;
ADON=1;
while(adc_del--);
ADCON0 =0x35;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
else if(val==7)
{
adc_temp0=0;
{
ADCON0=0x38;
ADON=1;
while(adc_del--);

ADCON0 =0x3d;
adc_hbit=ADRESH;
adc_lbit=ADRESL;
}
}
adc_val1=adc_temp0/10;
return adc_val1;
}
#define First_Line 0x80
#define Second_Line 0xc0
#define Curser_On 0x0f
#define Curser_Off 0x0c
#define Clear_Display 0x01
#define Data_Port PORTD
#define Lcd_rs RC4
#define Lcd_en RC5
void Lcd8_Init();
void Lcd8_Command(unsigned char);
void Lcd8_Write(unsigned char,unsigned char);
void Lcd8_Display(unsigned char,const unsigned char*,unsigned
int);
void Lcd8_Decimal2(unsigned char,unsigned char);
void Lcd8_Decimal3(unsigned char,unsigned int);
void Lcd8_Decimal3c(unsigned char,unsigned int);
void Lcd8_Decimal4(unsigned char,unsigned int);
void Lcd8_Decimal5(unsigned char,unsigned long int);
void Delay(unsigned int);
void Lcd8_Init()
{
Lcd8_Command(0x38); //to select function set
Lcd8_Command(0x06); //entry mode set

Lcd8_Command(0x0c); //display on
Lcd8_Command(0x01); //clear display
}
void Lcd8_Command(unsigned char com)
{
Data_Port=com;
Lcd_en=1;
Lcd_rs=0;
Delay(200);
Lcd_en=0;
Delay(200);
}
void Lcd8_Write(unsigned char com,unsigned char lr)
{
Lcd8_Command(com);
Data_Port=lr; // Data
Lcd_en=Lcd_rs=1;
Delay(200);
Lcd_en=0;
Delay(200);
}
void Lcd8_Display(unsigned char com,const unsigned char
*word,unsigned int n)
{
unsigned char Lcd_i;
for(Lcd_i=0;Lcd_i<n;Lcd_i++)
{
Lcd8_Write(com+Lcd_i,word[Lcd_i]);
}
}
void Lcd8_Decimal2(unsigned char com,unsigned char val)
{
unsigned int Lcd_hr,Lcd_t,Lcd_o;
Lcd_hr=val%100;

Lcd_t=Lcd_hr/10;
Lcd_o=Lcd_hr%10;
Lcd8_Write(com,Lcd_t+0x30);
Lcd8_Write(com+1,Lcd_o+0x30);
}
void Lcd8_Decimal3(unsigned char com,unsigned int val)
{
unsigned int Lcd_h,Lcd_hr,Lcd_t,Lcd_o;
Lcd_h=val/100;
Lcd_hr=val%100;
Lcd_t=Lcd_hr/10;
Lcd_o=Lcd_hr%10;
Lcd8_Write(com,Lcd_h+0x30);
Lcd8_Write(com+1,Lcd_t+0x30);
}
void Lcd8_Decimal3c(unsigned char com,unsigned int val)
{
unsigned int Lcd_h,Lcd_hr,Lcd_t,Lcd_o;
Lcd_h=val/100;
Lcd_hr=val%100;
Lcd_t=Lcd_hr/10;
Lcd_o=Lcd_hr%10;
Lcd8_Write(com,Lcd_h+0x30);
Lcd8_Write(com+1,'.');
Lcd8_Write(com+2,Lcd_h+0x30);
}

void Lcd8_Decimal4(unsigned char com,unsigned int val)

{
unsigned int Lcd_th,Lcd_thr,Lcd_h,Lcd_hr,Lcd_t,Lcd_o;
val = val%10000;
Lcd_th=val/1000;
Lcd_thr=val%1000;
Lcd_h=Lcd_thr/100;
Lcd_hr=Lcd_thr%100;
Lcd_t=Lcd_hr/10;
Lcd_o=Lcd_hr%10;
Lcd8_Write(com,Lcd_th+0x30);
}
void Lcd8_Decimal5(unsigned char com,unsigned long int val)
{
unsigned int Lcd_th,Lcd_thr,Lcd_h,Lcd_hr,Lcd_t,Lcd_o,a,b;
//val = val%10000;
Lcd_th=val/10000;
Lcd_thr=val%10000;
Lcd_h=Lcd_thr/1000;
Lcd_hr=Lcd_thr%1000;
Lcd_t=Lcd_hr/100;
Lcd_o=Lcd_hr%100;
a=Lcd_o/10;
b=Lcd_o%10;
Lcd8_Write(com,Lcd_th+0x30);
Lcd8_Write(com+3,a+0x30);
Lcd8_Write(com+4,b+0x30);
}
void Delay(unsigned int del)

{
while(del--);
}

PUBLICATIONS
A. Conference Papers:
1. Pradnya R. Jadhav, Vikram S. Rathod “A comparative Study of DC-DC Step Up
Converter ”, presented in International Conference on “Electrical, Computer and
Communication Technology (ICECCT) ”, at SVS college of Engineering,
Coimbatore on 17th March 2017.

Implementation of ZVT-ZCT-PWM Boost Converter

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Implementation of ZVT-ZCT-PWM Boost Converter

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A

“Implementation of ZVT-ZCT-PWM Boost Converter”

Under the guidance of

For the degree of

(Electrical Power Systems)

Department of Electrical Engineering,

“Implementation of ZVT-ZCT-PWM Boost Converter”

in partial fulfillment for the award of Degree of

Department of Electrical Engineering,

VIDYANAGAR, KARAD, 415124 DIST SATARA

This is to certify that, the dissertation entitled “Implementation of ZVT-ZCT-PWM

Prof. P. R. Jadhav Prof. V. B. Waghmare

“Implementation of ZVT-ZCT-PWM Boost Converter”. It has not been previously

other Examining body or University.

Vikram Sadashiv Rathod

Vikram Sadashiv Rathod has done the appropriate work related to

“Implementation of ZVT-ZCT-PWM Boost Converter” in partial fulfillment for the

award of Degree of Master of technology (Electrical Power Systems) is being submitted to

Government College of Engineering, Karad (An Autonomous Institute of Govt. of

Maharashtra), affiliated to Shivaji University, Kolhapur, India.

Guide: Prof. P. R. Jadhav

List of figures III

Figure Illustration Page

3.1 N-Channel power MOSFET symbol 14

3.2 Elementary chopper circuit 15

3.3 Output voltage and current waveform of chopper circuit 16

3.4 Hard switching and soft switching 17

3.5 Circuit diagram of buck converter 18

Steady-state inductor voltage and current waveform, buck

3.7 Circuit diagram of boost converter 19

Steady-state inductor voltage and current waveform, boost

3.9 Circuit diagram of buck-boost converter 20

3.10 Steady-state inductor voltage and current waveform, buck-boost

3.11 Circuit diagram of cuk converter 21

3.12 Circuit diagram of SEPIC converter 21

4.1 Zero voltage switching (ZVS) 23

4.2 Zero current switching (ZCS) 24

4.3 Circuit Scheme of Proposed ZVT-ZCT-PWM boost converter 25

4.4 Operating modes of the converter 25

Circuit Diagram of Boost Converter with Auxiliary Resonant

5.2 Overall MATLAB-Simulink Model 35

5.3 Block Diagram of PWM Generator 36

Output Voltage Vs Time across main switch while snubber

Output Voltage with input 150 V while snubber circuit

5.7 Output Voltage with input 150 V with snubber circuit 38

Block diagram of hardware implementation of ZVT-ZCT-PWM

5.9 Hardware Connection of ZVT-ZCT-PWM Boost converter 41

5.12 Circuit diagram of micro-controller 45

5.13 Internal Structure of opto-Coupler 45

5.14 LCD display 47

5.15 LCD display showing result 47

5.16 Symbol of Power MOSFET 48

5.17 Structure of Power MOSFET 48

5.18 Output Voltage when input of rectifier circuit is 10V 54

Table Illustration Page

3.1 Hard switching dc-dc converter topologies 22

5.1 Circuit Parameter 34

5.2 Simulink Output 39

5.3 Output Result with snubber cell 52

5.4 Output Result without snubber cell 53

Department of Electrical Engineering, Government College of Engineering, Karad Page 1

efficiency. In this thesis a soft-switching boost power converter is proposed and

Department of Electrical Engineering, Government College of Engineering, Karad Page 2

Department of Electrical Engineering, Government College of Engineering, Karad Page 3