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MUR3040PT, RURH1540CC, MUR3050PT,

RURH1550CC, MUR3060PT, RURH1560CC


April 1995 File Number 2774.3

15A, 400V - 600V Ultrafast Dual Diodes Features


• Ultrafast with Soft Recovery Characteristic
MUR3040PT, MUR3050PT, MUR3060PT and RURH1540CC,
(tRR < 55ns)
RURH1550CC, RURH1560CC are ultrafast dual diodes
(tRR < 55ns) with soft recovery characteristics. They have a low • +175oC Rated Junction Temperature
forward voltage drop and are of planar, silicon nitride passivated, • Reverse Voltage Up to 600V
ion-implanted, epitaxial constructiodn.
• Avalanche Energy Rated
These devices are intended for use as energy steering/clamping
diodes and rectifiers in a variety of switching power supplies and Applications
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristics minimizes • Switching Power Supply
ringing and electrical noise in many power switching circuits thus • Power Switching Circuits
reducing power loss in the switching transistor.
• General Purpose

Ordering Information Package


PACKAGING AVAILABILITY
JEDEC TO-218AC
PART NUMBER PACKAGE BRAND ANODE1
MUR3040PT TO-218AC MUR3040PT CATHODE
CATHODE ANODE2
RURH1540CC TO-218AC RURH1540C
(FLANGE)
MUR3050PT TO-218AC MUR3050PT
RURH1550CC TO-218AC RURH1550C
MUR3060PT TO-218AC MUR3060PT
RURH1560CC TO-218AC RURH1560C
NOTE: When ordering, use the entire part number.
Symbol
K

A1 A2

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified


MUR3040PT MUR3050PT MUR3060PT
RURH1540CC RURH1550CC RURH1560CC
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 400V 500V 600V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 400V 500V 600V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 400V 500V 600V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) 15A 15A 15A
(Total device forward current at rated VR and TC = +150oC)
Peak Forward Repetitive Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 42 42 30A
(Rated VR, square wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 200A 200A 200A
(Surge applied at rated load condition halfwave 1phase 60Hz)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -55oC to +175oC -55oC to +175oC -55oC to +175oC

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC

Electrical Specifications TC = +25oC, Unless Otherwise Specified

LIMITS
TEST MUR3040PT, RURH1540CC MUR3050PT, RURH1550CC MUR3060PT, RURH1560CC
SYMBOL CONDITION MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF IF = 15A - - 1.12 - - 1.20 - - 1.20 V
TC = +150oC
IF = 15A - - 1.25 - - 1.50 - - 1.50 V
TC = +25oC
IR at VR = 400V - - 500 - - - - - - µA
TC = +150oC VR = 500V - - - - - 500 - - - µA
VR = 600V - - - - - - - - 500 µA
IR at VR = 400V - - 100 - - - - - - µA
TC = +25oC VR = 500V - - - - - 100 - - - µA
VR = 600V - - - - - - - - 100 µA
tRR IF = 1A - - 55 - - 55 - - 55 ns
IF = 15A - - 60 - - 60 - - 60 ns
tA IF = 1A - 20 - - 20 - - 20 - ns
IF = 15A - 30 - - 30 - - 30 - ns
tB IF = 1A - 15 - - 15 - - 15 - ns
IF = 15A - 17 - - 17 - - 20 - ns
RθJC - - 1.5 - - 1.5 - - 1.5 oC/W

EAVL see Fig. 7, 8 - - 20 - - 20 - - 20 mj


DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time at dIF/dt = 100A/µs (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.

V1 AMPLITUDE CONTROLS IF +V3


V2 AMPLITUDE CONTROLS dIF/dt
R1 Q2 t1 ≥ 5tA(MAX)
L1 = SELF INDUCTANCE OF R4
t2 > tRR
+ LLOOP
Q1 t3 > 0
L1 tA(MIN)
+V1 ≤
R4 10 dIF tRR
0 IF
dt
LLOOP tA tB
t2
0
R2
t1 DUT
Q4 0.25 IRM
IRM
t3
C1 R4
0
Q3
-V2 -V4 VR
R3
VRM (REC)

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. DEFINITIONS OF tRR, tA AND tB

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

2
MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC

Typical Performance Curves


100.0 200
100

TJ = +150oC
IF, FORWARD CURRENT (A)

IR , REVERSE CURRENT (µA)


10.0 10
TJ = +150oC

TJ = +100oC 1 TJ = +100oC
1.0
TJ = +25oC
0.1

0.10
0.01
TJ = +25oC

0.1
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 100 200 300 400 500 600
VF, FORWARD VOLTAGE DROP (V) VR , REVERSE VOLTAGE (V)

FIGURE 3. FORWARD VOLTAGE vs FORWARD CURRENT FIGURE 4. REVERSE VOLTAGE vs REVERSE CURRENT
CHARACTERISTIC CHARACTERISTIC
80.0 16

70.0 14
IF(AVG) , AVERAGE CURRENT (A)
t, RECOVERY TIMES (ns)

60.0 12 DC

50.0 10

40.0 8 SQUARE WAVE


tRR
30.0 6

20.0 tA 4

10.0 tB 2

0.0 0
1.0 10.0 100.0 140 145 150 155 160 165 170 175 180
IF, FORWARD CURRENT (A) TC , CASE TEMPERATURE (oC)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL CURRENT DERATING CURVE vs CASE
CURRENT TEMPERATURE

IMAX = 1A
L = 40mH
R < 0.1Ω
EVAL - 1/2 LI2 [VAVL/VAVL -VDD)]
Q1 AND Q2 ARE 1000V MOSFETS
L R +
Q1
VDD

130Ω
1MΩ
DUT VAVL
Q2
12V

CURRENT IL
130Ω SENSE I V
VDD
-

12V t0 t1 t2 t

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. CURRENT VOLTAGE WAVEFORM

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