Electronic Devices and Circuits

(EL-324)
LABORATORY MANUAL
FALL 2016

(LAB# 08)
Study of Bipolar Junction Transistor
Engr. Muhammad Sajjad

Student Name: ___________________________

Roll No: _____________ Section: ___________

Date performed: _____________________, 2016

Manual Submission Date: ______________, 2016

_______________________________
LAB ENGINEER SIGNATURE & DATE

MARKS AWARDED: /10

______________________________________________________________________________________________________________________________________________________

NATIONAL UNIVERSITY OF COMPUTER AND EMERGING SCIENCES, ISLAMABAD

Prepared by: Engr. Naveed Iqbal Version: 2.0

Last Edited by: Engr. Muhammad Sajjad Updated: FALL 2016
Verified by: Dr. Durdana Habib
 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad FALL 2016
08
_________________________________________________________________________________

LAB: 08 Study of Bipolar Junction Transistor

Objectives of the Exercise:
 Introduction to Transistors with emphasis on BJTs.
 Introduction to different characteristic parameters related to BJT and their Measurement/Calculation.
 Analysis of Transistor circuit to with the help of these parameters.

Equipment Required:
 BJT (PNP-2N2907)
 Resistors
 Multimeter
 Jumper Wires
 Wire Stripper
Theory:
The transistor was invented by a team of 3 men in 1947 at Bell Laboratories. This first device in this
family of devices was not a bipolar junction device but it was beginning of a technological revolution
that is still continuing on. Two basic types of transistors
 Bipolar Junction Transistor
 Field-Effect Transistors (Fets)
Generally, devices in which currents are established due to the motion of both the N-type and P-type
particles are referred to as the bipolar devices. Consequently, the transistors in which the current flow
is due to Holes and electrons are termed as the BJTs.
Structure
 BJT consists of three differently doped semiconductor regions, the emitter region, the base region
and the collector region.
 These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and
n type in an NPN transistor.
 Each semiconductor region is connected to a terminal, appropriately labeled: emitter (E), base (B)
and collector (C).

Fig 7.1: Symbolic Representation of BJTs

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of Computer and Emerging Sciences
Islamabad FALL 2016
08
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BJT Characteristic Curve and Regions of Operation:

Modes Of Operation:
The operational mode of the BJT depends on how the junctions between the regions are biased. Since
there are two junctions, the emitter-base junction (EBJ) and the collector-base junction (CBJ), and
each of these junctions may be either forward- or reverse-biased, there are four possible modes of
operation.
Mode Base-Emitter Junction Base-Collector Junction
Saturation Forward Forward
Active Forward Reverse
Inverse Active Reverse Forward
Cutoff Reverse Reverse

1) Cutoff region:
The first region is called “cutoff”. This is the case where the transistor is essentially inactive. In
cutoff, the following behavior is noted:
 Ib = 0 (no base current)
 Ic = 0 (no collector current)
 Vbe < 0.7V(emitter-base junction is not forward biased)
Whenever we observe the terminals of a BJT and see that the emitter-base junction is not at least 0.6-
0.7 volts, the transistor is in the cutoff region. In cutoff, the transistor appears as an open circuit
between the collector and emitter terminals. This implies Vout is equal to Vcc.
2) Saturation region:
The second region is called “saturation”. This is where the base current has increased well beyond the
point that the emitter-base junction is forward biased. In fact, the base current has increased beyond
the point where it can cause the collector current flow to increase. In saturation, the transistor appears
as a near short circuit between the collector and emitter terminals. This implies Vout is almost 0 volts,
but actually about 0.2 volts.
In saturation, the following behavior is noted:
 Vce <= 0.2V. This is known as the
saturation voltage, or Vce(sat)
 Ib > 0, and Ic > 0
 Vbe >= 0.7V
3) Active Region
The final region of operation of the BJT is the
“forward active” region. It is in this region
that thetransistor can act as a fairly linear

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad FALL 2016
08
_________________________________________________________________________________

amplifier. In this region, we see that:

 0.2 < Vce < Vcc ; where Vcc is the supply voltage
 Ib > 0 and Ic > 0
 Vbe >= 0.7V
Thus the transistor is on and the collector to emitter voltage is somewhere between the cutoff and
saturated states. In this state, the transistor is able to amplify small variations in the voltage present on
the base. The output is extracted at the collector. In the forward active state, the collector current is
proportional to the base current by a constant multiplier called “beta”, denoted by the symbol β. Thus
in the forward active region we will also observe that:
Ic = β*Ib

LAB TASKS

Task 1:

Based on these DC continuity tester indications, what type of transistor is this, PNP or NPN? Also, to the best of
your ability, identify the transistor’s three terminals (emitter, base, and collector).

• With negative test lead on pin 1, positive test lead on pin 2: no continuity
• With negative test lead on pin 1, positive test lead on pin 3: no continuity
• With negative test lead on pin 2, positive test lead on pin 1: no continuity
• With negative test lead on pin 2, positive test lead on pin 3: no continuity
• With negative test lead on pin 3, positive test lead on pin 1: continuity
• With negative test lead on pin 3, positive test lead on pin 2: continuity

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad FALL 2016
08
_________________________________________________________________________________

Task 2:
 Implement the following Circuit and then determine the values for the IC, IB, IE, VBE, VCE, VCB, α
DC, and βDC
. practically. Solve the Circuit for βDC = 100.
 Also perform theoretical equations. Compare measured and calculated results.
 Show the detail of your theoretical work.
VCC=5V, Rb= 150K, Rc= 1k VBB= -2V

Values IB IC IE VCE VBE VBC βDC αDC

Measured
Calculated

Calculations:

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of Computer and Emerging Sciences
Islamabad FALL 2016
08
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Task 3:
Generation of the Collector Characteristics Curve.
 Using the circuit shown below one can generate a set of collector characteristic curves that show
how the collector current IC, varies with the collector-to-emitter voltage VCE, for specified values of
base current, IB.
 After finding the values draw the characteristic curves corresponding to each set of values
 Find βac using the graph.

Use the following procedure to complete your task:

 First Set VCC and VBB equal to zero.
 Measure IC, IB and IE. Justify the Readings that you get. What should be the ideal
case readings under this situation?
 Increase the VBB and obtain a reasonable value of IB , at this value fix the VBB. Sweep the VCC
and record the values of IC at reasonable points along the sweep.
 The step shall generate a curve. This is the first curve among the set of curves which we shall
generate.
 Repeat the above step for higher values of VBB and correspondingly a higher value of IB.
 Record the reading to generate a total of 5 curves.
 Draw DC Load Line and identify the Cutoff and Saturation on the set of curves.

Ib ( uA) =___________ Vbb ( V ) =__________ Vbe ( V ) =_________

Sr. No Vcc ( V ) Vce ( V ) Ic ( mA) Vcb ( V ) Vbe ( V ) V(Rl) (V) Vc ( V )

1 0
2 0.3

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad FALL 2016
08
_________________________________________________________________________________

3 0.6
4 0.9
5 1.2
6 1.5
7 1.8
8 2.1
9 2.4
10 2.7
11 3
12 3.3
13 3.6
14 3.9
15 4.5

Task 4:
 Using the data obtained during the previous task, draw characteristic curves.

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad FALL 2016
08
_________________________________________________________________________________

Task 5:
First perform calculation and solve the circuit below.
 Implement the following Circuit and then determine the values for the IC1, IB2, IE2, VC1, VC2, VCEQ1,
VCeQ2,.practically. βDC = 200.
Now compare theoritical results with experimental results.

Values IB2 IB1 IC1 IC2 IE2 VCEq1 VCEq2 VC1 VC2
Measured
Calculated

Transistors Region of Operation

Q1

Q2

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad FALL 2016
08
_________________________________________________________________________________

Student's feedback: Purpose of feedback is to know the strengths and weaknesses of the
system for future improvements. This feedback is for the 'current lab session'. Circle your
choice:

[-3 = Extremely Poor, -2 = Very Poor, -1 = Poor, 0 = Average, 1 = Good, 2 = Very Good, 3 =
Excellent]:
The following table should describe your experience with:
S# Field Rating Describe your experience in words
1 Overall Session -3 -2 -1 0 1 2 3
2 Lab Instructor -3 -2 -1 0 1 2 3
3 Lab Staff -3 -2 -1 0 1 2 3
4 Equipment -3 -2 -1 0 1 2 3
5 Atmosphere -3 -2 -1 0 1 2 3

Any other valuable feedback:

__________________________________________________________________________
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Student's Signature: _________________________________

AWARDED

Correctness

Conclusion
Originality
of results

Initiative
Neatness
MARKS

Attitude

TOTAL

TOTAL 10 10 10 20 20 30 100

EARNED

Lab Instructor's
Comments:_________________________________________________________________
__________________________________________________________________________
__________________________________________________________________________

Lab Instructor's Signature: ________________________

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