Name: 甲氏嫻（Giap Thi Hien）

Student ID: 610914214

Colloquium report
Two-Dimensional Layered Materials Toward Phase-
Engineered Hybrid Films for Innovative Nanoelectronics
The Physics Colloquium module sessions have been particularly significant to
me, because sharing the results of relevant research carried out by several specialists
has deepened my knowledge and boosted my interest in scientific research. In this
module, what I found particularly striking was the “Two-Dimensional Layered
Materials Toward Phase-Engineered Hybrid Films for Innovative Nanoelectronics”
by professor Yu-Lun Chueh. In this report, the author told about 2D layered
materials, including graphene, transition metal dichalcogenides (TMDs) allow the
scaling down to atomically thin thicknesses and possess unique physical properties
under dimensionality confinement. Chemical vapor deposition (CVD) process is the
most popular approach for all kind of 2D materials due to its high yield and quality.
Nevertheless, the need for high temperature and the relatively long process time
within each cycle hinders for commercial development in terms of production cost.
However, the transfer procedure has become one of the major limitations of the
overall performance. In addition, the lack of a large-area and reliable synthesis
method restrict exploring all the potential applications of the TMDs. Chemical vapor
deposition (CVD) is a traditional approach for the growth of TMDs; nevertheless,
the high growth temperature is a major drawback for its to be applied in flexible
electronics. Therefor, an inductively coupled plasma (ICP) was used to synthesize
transition metal dichalcogenides (TMDs) through a plasma-assisted selenization
process of metal oxide (MOx) at a low temperature, as low as 250°C. Compared to
other CVD processes the use of ICP facilitates the decomposition of the precursors
at lower temperatures; therefore, the temperature required for the formation of
TMDs can be drastically reduced. By this way, they created PtSe2-layered films. The
synthesis temperature can be further reduced down to 100 °C under the plasma
condition of 400W. Accordingly, the electrical property and photoelectrical
properties of PtSe2-layered films were also investigated. I personally decided to
further investigate two-dimensional materials and this article will give an overview
of the most common characteristics of PtSe2 in two-dimensional materials.
2D layered materials, such as graphene and transition metal dichalcogenides
(TMDCs) have been extensively studied because of their electricity and optics
feature with ultrathin thickness and has been seen as having great potential for a
wide range of future applications. In particular, TMDCs have a general formula of
MX2, where M refers to transition metal atom, such as molybdenum (Mo),
tungsten (W), platinum (Pt), and palladium (Pd), while X is the chalcogen atom,
such as sulfur (S), selenium (Se), and tellurium (Te), in which the layers are
attached by Van der Waals force, allowing the layer separation by the mechanical
force up to a TMDC monolayer with three atomic layers by a transition metal layer
sandwiched by two chalcogen layers. To apply TMDs materials to real devices,
their large scale growth is essential. The chemical or physical vapor deposition
(CVD or PVD) is the most common way to achieve large-area growth. This
method can be divided into two types, the sulfurization (or selenization) of
metal thin films and vapor phase reaction of metal oxides with chalcogen
precursor. it is not only provides better thickness controllability and uniformity
in a larger area but also offers an easy platform with a controllable pattern
process to the direct growth of TMDCs on arbitrary substrates.
Platinum diselenide (PtSe2) is an exciting new member of the two-
dimensional (2D) transition metal dichalcogenide (TMD) family. It has a semimetal
to semiconductor transition when approaching monolayer thickness and has already
shown significant potential for use in device applications. Notably, PtSe2 can be
grown at low temperature making it potentially suitable for industrial usage. Its
ultralow bandgap has been revealed to be potentially used for optical and electrical
applications as the thickness of the PtSe2-layered film approaches to a monolayer.
From theoretical calculation, the bulk PtSe2 is metallic, and when the thickness
shrinks to bilayer and monolayer, the bandgap opens to 0.6 and 1.38 eV, respectively.
Furthermore, theoretical calculation on PtSe2-layered film estimates high mobility
at room temperature and its unique band structure offered excellent performance in
photocatalysis such as hydrogen evolution reaction (HER) andoxygen evolution
reaction. In contrast to Mo and W TMDCs, bulk PtSe2 shows a metallic behavior,
which may offer a new possibility to improve device contact for material
manipulation by controlling the numbers of PtSe2 monolayers.