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Vacuum xxx (xxxx) xxx

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Vacuum
journal homepage: www.elsevier.com/locate/vacuum

WO3 nanowire field emission point electron source with high brightness
and current stability
Zufang Lin, Huanjun Chen, Juncong She, Shaozhi Deng, Jun Chen *
State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information
Technology, Sun Yat-sen University, Guangzhou, China

A R T I C L E I N F O A B S T R A C T

Keywords: Field emission current stability and brightness are important criteria for commercial field emission point electron
WO3 nanowires sources. Here, field emission point electron sources were fabricated from individual WO3 nanowires (NWs) and
Current stability stable emission was achieved under ~10− 5 Pa. The reduced brightness of one of the emitter was ~6.08 × 109 A
Field emission
m− 2⋅sr− 1 V− 1, which was comparable to commercial cold cathode sources. One of the individual WO3 field
Point electron source
emitters could operate at an emission current of 0.68 μA for tens of hours without degradation using a ballast
resistor regulator. A current fluctuation of the emitter, at a low emission current of 155 nA, was 0.045% for the
short-term. Its long-term fluctuation, at 0.68 μA, was 3.89% for 38 h. Besides the ballast resistor, inert surface of
the oxide NW and low tip temperature owing to the defect-related field emission mechanism were proposed as
the reasons for such high emission stability under mild high vacuum. Our result was significant in the devel­
opment of stable field emission point sources.

1. Introduction explore new cathode materials to improve the property of cold cathode,
such as CNT, silicon, diamond and etc. [3–14].
The point electron source is the main component in electron-beam In the studies of stability, carbon cone nanotip (CCNT) exhibits un­
based inspection instruments and microfabrication equipment, such as precedented stability with a root mean square (RMS) of ˂ 0.5% during
scanning electron microscopy (SEM), transmission electron microscopy the 1 h measurement in a vacuum level of 2 × 10− 9 Pa after flash
(TEM), electron beam lithography (EBL), etc. The consistent progress of cleaning. Further, highly reduced brightness of 1.6 × 109 A m− 2⋅sr− 1
the semiconductor industry increases the demands on the performance V− 1 and narrow energy spread of 0.32 eV were obtain from the CCNT
of these instruments, which is largely limited by the electron source. emitter. Moreover, by adopting CCNT as the emitter, the challenge of the
Therefore, a high-performance point electron source is critical to the operation regarding the selection, alignment, and mounting of a typical
development of these instruments. Compared to thermionic emission CNT onto the W tip could be avoided, and the reproducibility of the FE
(TE) and Schottky emission (SE) cathodes, cold cathode sources could characteristics could also be improved [15–17]. Furthermore, as
offer an electron beam with improved brightness and lowered energy demonstrated by Zhang et al. a LaB6 nanowire (NW) with ultrahigh
spread [1]. Therefore, they are expected to satisfy the growing demands brightness and beam monochromaticity could also work in a vacuum of
of the electron source in these instruments [2]. 3 × 10− 7 Pa, at high current density, with very low flicker noise and
Until now, tungsten (W) tips are still the major cold cathode point without decay for tens of hours. The excellent stability of the emission
electron source for commercial SEM or TEM. A vacuum level of <10− 8 current was due to the inert surface of the NW. Moreover, LaB6 NW was
Pa was required while utilizing W tips as the cold cathode. Although also installed in cold cathode SEM and the SEM performance was
working in this vacuum environment, flash cleaning was required every investigated. Compared to the W (310) cold cathode source, the per­
few hours on the W tips to prevent the temporal decay of the current, formance of cold cathode SEM utilizing LaB6 NW was significantly
which was not desired in the operation. The long- and short-term in­ improved in terms of imaging and analytical capabilities [18].
stabilities of the field emission (FE) current are the weakened stems of Lanthanum hexaboride (LaB6) cold field emission tips reported by Singh
the W tip cold cathode sources, and many efforts have been invested to et al. also possess excellent emission current stability. All the three tips

* Corresponding author.
E-mail address: stscjun@mail.sysu.edu.cn (J. Chen).

https://doi.org/10.1016/j.vacuum.2021.110660
Received 29 April 2021; Received in revised form 4 October 2021; Accepted 5 October 2021
Available online 7 October 2021
0042-207X/© 2021 Elsevier Ltd. All rights reserved.

Please cite this article as: Zufang Lin, Vacuum, https://doi.org/10.1016/j.vacuum.2021.110660


Z. Lin et al. Vacuum xxx (xxxx) xxx

Fig. 1. (a) Typical SEM image of one of the WO3 NW samples, which were welded on the W tip. The inset is the schematic diagram of the assembled WO3 NW emitter
for the FE measurements. (b) Tip morphology of one of the WO3 NW emitters. (c) TEM image of the NW. The inset is the selected area electron diffraction (SAED)
pattern. (d) High-resolution TEM image of the NW tip.

with different diameter could operate stable for more than 30 min in a emission current of 0.68 μA with RMS of 3.89% for tens of hours in a
vacuum level of 5 × 10− 7 Pa. The tips were fabricated by electro­ mild vacuum level of 1.4 × 10− 5 Pa while connecting with a ballast
chemical etching and focused ion beam milling which could avoid the resistor. The reduced brightness of the emitter was ~6.08 × 109 A
alignment problem during the fabrication of the sources [19]. A HfC NW m− 2⋅sr− 1 V− 1. The properties of the WO3 NW emitters were repeatable
electron point source, which was recently developed by Tang et al. also and uniform. The results obtained from our work indicate that WO3 NW
demonstrated good emission stability in a vacuum of 4 × 10− 7 Pa with may be a candidate for application as a point electron source.
fluctuations of ˂ 1% for 1 h, at 50 nA. The practical brightness of the HfC
NW point electron source was 1.95 × 1011–3.81 × 1011 A m− 2⋅sr− 1 V− 1, 2. Material and methods
which corresponded to the energy spread of 0.21–0.26 eV. The terminal
surface structure of the NW was composed of HfC1− xOx layers with HfO2 The WO3 NWs were grown by a non-catalytic thermal oxidation
on the edge. It is inert to the adsorption/desorption of gas molecules, method. The details of their preparation process, composition, and
thus inducing such a stable emission current [20,21]. structure characterization have been reported in our previous work [34,
In summary, there are several new types of nanomaterials that 35]. Briefly, a glass substrate was cleaned, after which a W film of ~1 μm
possess high brightness, low energy spread, and high emission stability thick was deposited on the substrate by direct current (DC) magnetron
and are certainly qualified candidates for next-generation point electron sputtering. The sample was heated to 540 ◦ C within 90 min while N2 gas
sources. However, to achieve their commercial applications, more in­ was passed into the quartz tube. Thereafter, after it was kept for 90 min,
vestigations are still required. Furthermore, the syntheses of these ma­ at 540 ◦ C, the sample was allowed to cool to room temperature (24 ◦ C).
terials are quite complicated, and the pretreatment process is also Before the NW assembling process, the apex of W tip was truncated
challenging to operate, especially for LaB6 and HfC NWs. by the Ga ion beam in a focused ion beam (FIB) system to obtain a
Metal oxide NWs possess robust structures and chemical stabilities platform. Next, the truncated W tip was moved to touch a selected WO3
and could be readily synthesized by thermal oxidation method. Like NW, and a thin layer of Pt/C film was deposited onto the contact point
other one-dimensional (1D) nanomaterial, metal oxide NWs possess between the NW and the platform of the truncated W tip. The NW would
small radii and high aspect ratios and were reported to be excellent cold be subsequently separated from the substrate. The assembling process
cathode emitters [22–29]. Numerous studies were also conducted to was easy to operate and reproducible.
investigate their FE properties, and the results indicate that the FE The morphology and structure of the WO3 NWs were characterized
currents of metal oxide NW films, such as ZnO, CuO, and WO3 NW films, by SEM (Zeiss SUPER-55) and high-resolution TEM (HRTEM, FEI Tecnai
were steady [30–33]. Therefore, investigation of the stability of an in­ G2 F30). A phosphor screen and an indium tin oxide (ITO) thin film were
dividual metal oxide NW would be attractive. The results of our previous employed as the anode for the brightness and stability measurements,
works indicate that defective WO3 NWs possess high emission currents respectively. Five individual WO3 NWs were measured in this work. The
and are beneficial to achieving a long lifetime electron source [34,35]. distance between the W tip and the anode was in a range of 3–5 mm,
Therefore, in this study, we comprehensively studied the FE properties which was slightly different for the different measurements in practical
of single WO3 NW field emitter and explained the underlying mecha­ operation. The samples would undergo a common conditioning process
nism. Because of the robust structure, chemical stability, as well as the to remove the surface adsorption before measurements. In short, the
unique FE mechanism, the WO3 NW field emitter could generate applied voltage would increase gradually after sweep up and down for

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Z. Lin et al. Vacuum xxx (xxxx) xxx

mounted on the truncated W tip. The inset is the schematic diagram of


the assembled WO3 NW emitter for the FE measurements. Fig. 1 (b)
shows the SEM characterization result of the tip for one sample of the
field emitters. From the SEM image, it could be observed that the shape
of the NW tip could be approximated as a hemisphere. Its diameter and
length are 75 nm and 4.3 μm, respectively. The structure of the NW
could be observed in Fig. 1 (c) and (d). The results indicated that WO3
NW was defective with ordered planar defects, as previously depicted
[34]. The cleavage plane of the NW tip was (002), which possessed the
lowest energy, indicating that it was the most stable surface [36].

3.2. FE properties and brightness of the WO3 NW emitter

Typical FE property of one of the WO3 NWs is shown in Fig. 2 (a) by


subtracting the partial voltage of the ballast resistance. The turn-on
voltage corresponding to a current of 10 nA was ~155 V. The emis­
sion current (0.8 μA) could be achieved when the applied voltage
attained 200 V. The FE property could be described by the Fowl­
er–Nordheim (FN) equation:
/ ( / )
I = J × S = aF 2 ϕexp − bϕ3/2 F S (1)

where I and J are the emission current and current density, respectively;
S is the FE area; a = 1.54 × 10− 6 ; b = 6.53 × 109 ; ϕ is the work function;
And F is the electric field, at the surface, and it could be approximated by
Eq. (2) [37]:
/
F = Vapplied 5r (2)

Where Vapplied is the applied voltage and r is the radius of the NW. The
FN plot, shown in Fig. 2 (b) indicated that the emission process obeyed
the tunneling mechanism. The slope of the FN plot is 2605.4. The field
factor β value is calculated to be 2.5 × 107 m− 1. Then the “effective” tip
radius obtained from calculation is 8.1 nm as β = 1/(5 × r).
FE image of a WO3 NW field emitter was recorded from the phosphor
screen anode in the measurement, and the result is given in the inset of
Fig. 2 (c), which also shows the grayscale information of the FE image
that was extracted by MATLAB. From the results, the full width at half
maximum (FWHM) of the curve, which was referred to as the diameter
of the FE pattern, could be obtained. Its value is ~1.42 mm. Two peaks
could be observed from the gray scale image. This might originates from
the emission from different sites. The image on the phosphor screen is
the magnification of the emission site at the surface. The emissions from
the tip usually originate from small area at atomic scale because of the
work function variation induced by crystalline facet or surface absorp­
tion induced. In the FE image measurements, the radius of the NW was
31.6 nm, the distance between the cathode and the anode was ~4 mm.
Employing the method described in the reference [38], the solid angle of
Fig. 2. (a) FE I/V curve and (b) the corresponding FN plot of one individual
WO3 NW could be calculated as 0.097 sr. The reduced brightness of WO3
WO3 NW. (c) Grayscale information of the FE image of a WO3 NW sample that
NW is represented by Eq. (3):
was extracted by MATLAB. Inset is the FE emission pattern.
/
Br = I/(Sv ΩV) = I (πrv 2 ΩV) (3)
many cycles. A DC power supply (Keithley 248) and a multimeter
Since the tip of WO3 NW possessed a smooth hemisphere-like shape,
(Keithley 6485) were employed in the FE measurements. Resistors with
the virtual source-size could be expressed as follows [39]:
different resistance (vary from 300 MΩ to 900 MΩ) as current regulator
√̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅
were connected to the anode for stable operation. The specific resistance rv = 3rd/5eF (4)
was chosen based on the emission current and experimental procedure.
During conditioning and early stage of the measurement large resistor Where r is the radius of WO3 NW, e is the elementary charge, F is the
(900 MΩ) was used and when the conditioning process was finished, a electric field, andd = 9.76 × 10− 11 F/(φ1/2 t(y)) is the transverse energy.
small resistor (300 MΩ–500 MΩ) was adopted. Further, t(y) = 1 + 0.1107y1.33 and y = 3.79 × 10− 5 F1/2 /φ while kT/
d < 0.7 and y < 1 [39,40].
3. Results and discussions Resistance of the ballast resistor is 300 MΩ. The partial voltage
applied on the NW was 440 V, and the emission current was 700 nA. The
3.1. Morphology and structure work function of WO3 NW, as adopted in our previous work, was 4.6 eV,
which was reasonable based on the range (4.26–4.91 eV) that was re­
Fig. 1 (a) shows a typical image of one of the WO3 NWs, which was ported in the literature [41]. By approximating the shape of the nano­
welded on the W tip. There, we can observe that the WO3 NW was firmly wire tip as a hemisphere, rv was calculated to be 0.929 nm. Employing

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Table 1
Comparison of the reduced brightness of different individual one-dimensional nanomaterial point electron sources.
Material Vacuum levels Radius Brightness ( × 109 A m− 2⋅sr− 1
FE current rv (nm) Solid angle Angular current density Reference
(Pa) (nm) V− 1 ) (nA) (sr) (μA⋅sr− 1)
8
MCNT 2.66 × 10− 2.7 3±1 Total current 2.1 ± 0.2 – 16 ± 3 [43]
5–90
− 9
CCNT 2 × 10 ~2.5 1.6 Probe current 0.3 0.006 13 [15,17]
2.5
9
MCNT 5 × 10− 10 0.11 Total current 0.5 – 11 [44]

6
W5O14 10–8 ~25 – Total current – 8.03 × 10− 25.1 [45]
NW 580
− 7
LaB6 NW 3 × 10 ~30 60 Probe current ~0.195 – – [46]

7
HfC NW 5 × 10− ~25 289 Probe current ~0.357 – – [20]
46.4
6
WO3 NW 5.3 × 10− 31.6 6.08 Total current 0.929 0.097 7.24 this work
700

Fig. 3. (a) Typical short-term stability of a WO3 NW, at low (~155 nA) and high (0.886 μA) emission current. (b) Long-term current fluctuations of a WO3 NW in
~38 h.

the parameters and Eq. (3), the estimated reduced brightness of WO3 the emitted electrons would be scattered by the residual ions and gas
NW was 6.08 × 109 A m− 2⋅sr− 1 V− 1 rv would be smaller and the reduced molecules, hence the direction of the electrons would be diffused.
brightness would be higher if we used the value of the tip radius Probably, plate holes and a Faraday cup could be introduced in the beam
calculated from the slope of the FN data. A further experimental result brightness measurement to filter out the emitted electrons of wide an­
indicated that the reduced brightness of WO3 NW may be higher than gles. Generally, WO3 NW could be a qualified field emitter for electron
the aforementioned one because WO3 NW could operate stably, at a high sources with high brightness. However, further investigation of the
emission current of 2 μA. reduction of the solid angle is required. Moreover, an accurate calcu­
The brightness of the WO3 NW was compared to other point electron lation of the brightness by measuring rv, experimentally, may also be
source made from individual one-dimensional nanomaterials, which required, as well as reducing the diameter of the NW, as an alternative
were reported in the literature, as listed in Table 1. Notably, the angular and effective method of increasing its brightness [42].
current density of WO3 NW was slightly low despite the high emission
current. The low angular current density was attributed to the large solid
3.3. FE stability of the individual WO3 NW emitter
angle. We suspect that the large solid angle was caused by the low
vacuum level and the low applied field. In a low vacuum environment,
The RMS noise ratio is the parameter that is commonly employed to

Table 2
Comparison of the FE stabilities of point electron source made from individual one-dimensional nanomaterials.
Material Pretreatment Auxiliary circuit Vacuum levels Measurement FE current Fluctuation Time Reference
(Pa) temperature (◦ C) (nA) (h)
8
CNT 700 ± 50 10 min flash – 1.33 × 10− 300 200 0.2% 1 [47]
cleaning
9
MCNT undescribed active current 5 × 10− RT 100 0.5% 2 [44]
regulation
CCNT Flash cleaning – 2 × 10− 9 RT 40 0.5% 1 [16]
5
SCNT undescribed ballast resistor 6.65 × 10− RT 1000 5% 10 [48]
W5O14 NW Flash cleaning – 10–8 RT 5 3.5% 0.67 [45]
LaB6 NW Field evaporation – 3 × 10− 7 RT ~10 0.32% 1/60 [18]
HfC NW Field evaporation – 5 × 10− 7 RT 50 0.49% 1/60 [20]
0.93% 1
2.72% 5
250 0.6% 1/60
7
FIB milled Ga–HfC undescribed – 1 × 10− RT 173 0.7% 5/3 [21]
NW
− 5
WO3 NW Common conditioning ballast resistor 300 1.4 × 10 RT 692 0.332% 1/30 this work
process MΩ
300 MΩ 0.864% 1
500 MΩ 682 3.89% 38
300 MΩ 1151 1.18% 5/6
800 MΩ 155 0.045% 1/30

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Fig. 4. (a)–(d) are the HRTEM image, mapping result of the W + O, O element, and W element, respectively. (e) Field emission I–V curve of the W tip measured
immediately after field evaporation process. (f) Stability of a WO3 NW at different vacuum level.

evaluate the stability of a field emitter. Generally, higher emission value to clean the tip. And the FE emission properties were measured
current would increase ion bombardments. Also high emission current immediately after field evaporation. We found after the field evapora­
will induce increasing temperature at the emitter tip due to Joule tion the emission current (~6 μA) was much lower than that before field
heating, which will increase absorption and desorption process. These evaporation process and the turn-on voltage of the tip increased from
phenomena will induce higher fluctuation in emission current. How­ ~359 V to 2245 V. However, we found the emission from tungsten tip
ever, a high emission current is required in practical applications. was not stable after the field evaporation treatment process. Fig. 4 (e)
Therefore, the emission stabilities of WO3 NW, at different emission shows a typical result which we obtained when measuring the field
currents, were studied. The FE stability measurements of the WO3 NW emission I–V curve of the W tip immediately after the field evaporation
field emitters were conducted, at a pressure of ~1.4 × 10− 5 Pa. Our process. The emission current was low (in the level of several nA) when
results indicated that WO3 NW could emit tens of hours with a ballast we first increased the voltage to 2000 V. Then the emission current will
resistor connecting to the anode, at a current of 0.682 μA (ballast resistor increase to higher current (up to 6 μA) when sweep the voltage from 0 to
500 MΩ), without degradation. The long-term measurement was 4000 V. When we decreased the voltage again, the current was much
terminated because of the data overflow of the software. The typical higher than that the current obtained when the voltage sweeps up, as
short- and long-term stabilities of the emitter are shown in Fig. 3. The shown in Fig. 4 (e). The current level was close to that before the field
short-term current fluctuation of WO3 NW, at 155 nA and 0.886 μA were evaporation process gradually. We suspected the tip was rapidly
0.045% (ballast resistor 800 MΩ) and 0.415% (ballast resistor 300 MΩ), oxidized by the residual gas (mainly water vapor) in this vacuum level
respectively, in 2 min. Limited by the accuracy of the meter, the resis­ (10− 5 Pa) during the measurement. Then the field emission current
tance of the ballast resistor in low current measurement was increased to would be similar to the WO3 NWs again. Due to this complicated
increase the partial voltage of the ballast resistor and reduce the influ­ behavior, we cannot obtain the emission stability of the W tip at this
ence of the output voltage fluctuation of the voltage source on mea­ vacuum level. However, these results seem to indicate that the tungsten
surement results. Specific resistance of the ballast resistor is not vital to oxide layer was helpful to improve the emission stability and decrease
the FE stability and the reason will be present in the discussion part the turn-on voltage of the W tip at this vacuum level.
below. The long-term current fluctuation of the emitter for ~38 h was We also measured the current stability of the WO3 NW under
3.89%. The high stability characteristics were repeatable and could be different vacuum levels and the results are shown in Fig. 4 (f). The
obtained from the different measured samples. More data on the emis­ current fluctuation of the WO3 NW at a pressure of ~1.4 × 10− 5 Pa, ~1
sion stability are presented in the supplementary material (Fig. S1). For × 10− 5 Pa and ~9.3 × 10− 6 Pa (ballast resistor 300 MΩ) are 0.94%,
comparison, the FE stabilities of other reported nanomaterials are 0.79% and 1.52%, respectively. These results further indicated that the
summarized in Table 2. By comparison, it could be observed that the WO3 NW is less influenced by the vacuum level.
stability of the WO3 NWs with a ballast resistor was particularly
excellent.
We tried to compare its field emission properties with the W tip 3.4. Discussion about the current stability of the individual WO3 NW
under similar vacuum level. However, we found there was always an emitter
oxide layer on the surface of the W tip. A typical TEM characterization
result of a W tip is shown in Fig. 4(a–d). The element mapping results First of all, we found that the ballast resistor was pivotal for
show oxide layer exists on the tip. We measured the FE properties of the achieving long time operation and balancing the fluctuations of the
tip and the results shown that the FE properties and stability were emitted current. Since the vacuum level was about 10− 5 Pa, surface
similar with that of the WO3 NWs. We think the emission is from the adsorption, desorption and ion bombardments due to the residual
oxide therefore the properties are similar due to the influence of the molecules will definitely cause fluctuations in the current. Moreover,
surface oxide. We later adopted a field evaporation process to remove field emission is a quantum tunneling could cause the fluctuations in the
the oxide layer. We increased the emission current suddenly to a high current. We also measured current stability without ballast resistor
(Supporting materials, Fig. S2). It was found the emission current is

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Fig. 6. Calculated relationship between the FE current and the temperature of


the WO3 NW tip.

same ballast resistor indicates that the resistor adjustment do not play a
decisive role in stable current. Current fluctuations of the same WO3 NW
connected with 300 MΩ and 500 MΩ are 1.61% and 2.11%, respectively.
It is obvious that the FE stability does not increase due to the higher
resistance. Fig. 5 (b) shows the FE stability of two individual WO3 NW
emitters connected with the same ballast resistor. Although connecting
with the same ballast resistor, current fluctuations of the two samples
are different from each other. RMS of the two samples is 0.86% and
2.26% respectively. It reveals that the current fluctuation of the NW is
more likely depending on the characteristic of the NW itself under the
protection of the ballast resistor. Therefore, the structure and surface of
WO3 NW might also play important roles.
To obtain high emission stability that the change in work function of
the tip during the continuous emission process should be small and the
influence of the changes could be balanced by the ballast resistor. From
the characterization results of our previous work, it is clear that WO3
NW, which was synthesized by this method, possessed a γ-monoclinic
Fig. 5. (a) FE stability of one of the individual WO3 NW emitters connected lattice. The TEM results indicate that the cleavage plane of the NW tip
with different ballast resistors. (b) FE stability of two individual WO3 NW was (002), which was thermodynamically stable [55]. Moreover,
emitters connected with the same ballast resistor. because of the oxidation-resistant behavior and mechanical robustness
of oxides, the tip surface of WO3 NW would be chemically inert and
instable and the NW emitter is liable to breakdown. High spikes in resistant to ion bombardment. Furthermore, the low turn-on field of the
current were present and this will cause the NW could not keep thermal NW could reduce the kinetic energies of the back-bombarding gas ions
equilibrium and the temperature rise sharply could easily lead to ther­ and minify its impact on the cathode [56]. These unique characteristics
mal run away and breakdown of NW will occur. Either, without ballast of WO3 NW are favorable for reducing the changes in surface work
resistor, the NW could not undertake lone time constant voltage surface function during the emission process.
conditioning to improve the stability by surface cleaning. By using the Additionally, a current induced heating usually presents in nano­
resistor, the spikes could be suppressed and the NW will not easily go structured field emitter while operating at high current level [57,58].
breakdown. Constant voltage conditioning will be possible only using However, according to the defect-related FE model described in our
the resistor. Also, through an adjustment of the partial voltage applied previous work, a low temperature is expected due to the negative
on the NW, the ballast resistor would help to achieve a high stable feedback induced by defect-inducted conductivity. During the FE pro­
current. When the FE current increase, partial voltage of the ballast cess, the temperature of the NW would increase while the FE current
resistor will increase and the voltage applied on the NW would decrease. increases due to the Joule heating. Then, as the temperature increased,
Then, the FE current would decrease due to the reduced applied voltage more carriers would be excited from the defect states to the conduction
and protect the NW from thermal runaway and vice versa. It is worth band and promote the transport process. Naturally, the resistance of the
noting that by incorporating ballast resistors, diodes, MOSFETs, or NW would decrease. The decreasing resistance would play a negative
ungated FETs could not only improve the stability but also the unifor­ feedback on the increasing Joule heating and limit the increasing of the
mity of the emission from large area field emitter arrays [49–54]. Here temperature of the NW. We used the defect-related FE model described
as only one single NW emitter is used, the resistor could also increase the in our previous study to estimate the tip temperature of the WO3 NW
uniformity of the emission from different individual NW emitters. during field emission [34]. Values of the parameters used in the calcu­
However, our results using different ballast resistors show that the lation were listed as follow: the length and the radius of the measured
reason of stable current is not only the resistor adjustment. As shown in NW are 3.36 μm and 22.4 nm, respectively. The heat conduction coef­
Fig. 5, the instability of current measured from one sample connected ficient k is 1.63 W(mK)− 1and the transport mechanism factor Q equals
with different ballast resistors and two different NWs connected with the 130 meV according to our previous study [34]. The concentration factor

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Z. Lin et al. Vacuum xxx (xxxx) xxx

5
ρ0 is 4.9 × 10− Ω m which is tuned slightly to make the theoretical Foundation (Grant No. 2019M663232), the Fundamental Research
current value match the experimental one. By substituting the formula Funds for the Central Universities and the Science and Technology
of the FE current density and the value of the parameters listed above Department of Guangdong Province (Grant No.2020B0101020002).
into the temperature-dependent heat equation, temperature of the NW
tip would be obtained when thermal equilibrium is established. A Appendix A. Supplementary data
calculated variation of the temperature of the WO3 NW tip (Ttip) with the
FE current is shown in Fig. 6 considering the effect of a defect-induced Supplementary data to this article can be found online at https://doi.
conductivity. It could be obtained that the temperature of the NW tip org/10.1016/j.vacuum.2021.110660.
is only 603 K while the emission current is 0.682 μA. As the current
continues to increase, the temperature of the NW tip increases slowly References
and the maximum tip temperature of the NW is 630.7 K during the
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1.1683435.
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Overall, we think that the ballast resistor, structural stability, chemical and cold field emission sources, J. Vac. Sci. Technol. B. 24 (6) (2006) 2897–2901,
stability, as well as low Ttip, were responsible for the stable emission at https://doi.org/10.1116/1.2366675.
[3] K.S. Yeong, J.T.L. Thong, Life cycle of a tungsten cold field emitter, J. Appl. Phys.
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hours. [4] W.I. Milne, K.B.K. Teo, G.A.J. Amaratunga, P. Legagneux, L. Gangloff, J.P. Schnell,
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ultramic.2014.11.021.
The authors declare that they have no known competing financial [17] S. Mamishin, Y. Kubo, R. Cours, M. Monthioux, F. Houdellier, keV cold field
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The authors gratefully acknowledge financial support from the Na­ [19] G. Singh, R. Bucker, G. Kassier, M. Barthelmess, F.S. Zheng, V. Migunov, M. Kruth,
tional Natural Science Foundation of China (Grant Nos. 61901536 & R.E. Dunin-Borkowski, S.T. Purcell, R.J.D. Miller, Fabrication and characterization
of a focused ion beam milled lanthanum hexaboride based cold field electron
91833303), National Key Research and Development Program of China emitter source, Appl. Phys. Lett. 113 (9) (2018), 093101, https://doi.org/10.1063/
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