GRADE 11 EPAS 1

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 1

LEARNING ACTIVITY SHEET NO. 1

Resistors
Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9-

12PITD-IIb-c- 13

II. Key Concept

SYMBOLS
GRADE 11 EPAS 2

Actual image of resistor components

Fig.1.3-3

Uses / Application of Resistors

Resistance:
The property of a substance which opposes the flow of electric current (or electricity) through it
is called Resistance OR Resistance is the ability of a circuit which opposes current.
Mica, Glass, Rubber, Wood etc. are the examples of resistive materials. The unit of resistance
is OHM (Ω) where 1Ω = 1V/1A. which is derived from the basic electrical Ohm’s law = V = IR.

Other definitions of Ohm “Ω “are as follows;

If there is a potential difference of 1 volt between two ends of the conductor and the flowing
current through it is 1Ampere, then the resistance of that conductor would be 1 Ohm (Ω). OR
If 1 ampere of current is flowing through a resistance, and 1 joule per second (1Watt) energy (in
the form of heat) is generated, then the measurement of that resistance is 1 Ω.
GRADE 11 EPAS 3

Ohm is the measurement quantity of resistance, which produces one joule of energy (in the form
of heat) in one second, when one ampere of current is flowing through it.
The reciprocal of the resistance is called conductance.
Resistor
A resistor is a component or device designed to have a known value of resistance. OR,
Those components and devices which are specially designed to have a certain amount of
resistance and used to oppose or limit the electric current are called resistors.

Different Type of Resistors.

Types of Resistors
Resistors are available in different size, Shapes and materials. We will discuss all possible
resistor types one by one in detail with pro and cons and application/uses.

Two Types of Resistor

 Linear Resistors
 Non Linear Resistors

1. Linear Resistors:
Those resistors, which values change with the applied voltage and temperature, are called linear
resistors. In other words, a resistor, which current value is directly proportional to the applied
voltage is known as linear resistors.
Generally.

Two types of resistors which have linear properties.

1. 1. Fixed Resistors
1. 2. Variable Resistors

1. 1. Fixed Resistors
As the name tells everything, fixed resistor is a resistor which has a specific value and we can’t
change the value of fixed resistors.

Four Types of Fixed resistors.

 Carbon Composition Resistors
 Wire Wound Resistors
 Thin Film Resistors
 Thick Film Resistors

1. 1. 1) Carbon Composition Resistors

A typical fixed resistor is made from the mixture of granulated or powdered carbon or graphite,
insulation filler, or a resin binder. The ratio of the insulation material determines the actual
resistance of the resistor. The insulating powder (binder) made in the shape of rods and there are
two metal caps on the both ends of the rod.
GRADE 11 EPAS 4

There are two conductor wires on the both ends of the resistor for easy connectivity in the circuit
via soldering. A plastic coat covers the rods with different color codes (printed) which denote the
resistance value. They are available in 1 ohm to 25 mega ohms and in power rating from ¼ watt
to up to 5 Watts.

Fig.1.3-4

Characteristic of Fixed Resistors

Generally, they are very cheap and small in size, hence, occupy less space. They are reliable and available
in different ohms and power ratings. Also, fixed resistor can be easily connected to the circuit and
withstand for more voltage.

In other hand, they are less stable means their temperature coefficient is very high. Also, they make a
slight noise as compared to other types of resistors.

1. 1. 2) Wire wound Resistors

Wire wound resistor is made from the insulating core or rod by wrapping around a resistive wire. The
resistance wire is generally Tungsten, Manganin Nichrome or nickel or nickel chromium alloy and the
insulating core is made of porcelain, Bakelite, press bond paper or ceramic clay material.

The manganin wire wound resistors are very costly and used with the sensitive test equipment e.g.
Wheatstone bridge, etc. They are available in the range of 2 watts up to 100 watt power rating or more.
The ohms value of these types of resistors is 1 ohm up to 200k ohms or more and can be operated safely
up to 350°C.

in addition, the power rating of a high power wire wound resistor is 500 Watts and the available
resistance value of these resistors are is 0.1 ohm – 100k Ohms.
Construction of Wire wound Resistors

Advantages and Disadvantage of Wire wound Resistors

Wire wound resistors make lower noise than carbon composition resistors. Their performance is well in
overload conditions. They are reliable and flexible and can be used with DC and Audio frequency range.
Disadvantage of wire wound resistor is that they are costly and can’t be used in high frequency equipment.
GRADE 11 EPAS 5

Application/Uses of Wire Wound Resistors

Wire wound resistors used where high sensitivity, accurate measurement and balanced current control is
required, e.g. as a shunt with ampere meter. Moreover, Wire wound resistors are generally used in high
power rating devices and equipment, Testing and measuring devices, industries, and control equipment.

1. 1. 3) Thin Film Resistors

Basically, all thin film resistors are made of from high grid ceramic rod and a resistive material. A very
thin conducting material layer overlaid on insulating rod, plate or tube which is made from high quality
ceramic material or glass. There are two further types of thin film resistors.

III. Guided Practice

Activity 1

Self-Test

Direction: Enumerate the following type in separate activity sheet.

Three type of schematic diagram.

1. ______________
2. ______________
3. ______________

Two type of resistors

4. ______________
5. ______________

IV. Independent practice

Activity No. 2

Title: Fixed Resistor

Direction: Draw the actual image of fixed resistor.( See the actual image of resistor components)

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

DRAW BOX
GRADE 11 EPAS 6

V. Assessment

Two type of resistor which have a linear properties.

1.______________
2.______________

Give at least three type of fixed resistor.

3._____________
4______________
5______________

VI. Answer key of activity 1

1. Block diagram
2. Schematic diagram
3. Pictorial diagram
4.Linear Resistors
5. Non Linear Resistors

VII. Reference

CBLM

Writer: Benjunly P. Gengone

School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 7

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 2

LEARNING ACTIVITY SHEET NO. 2

Thin and thick film resistor

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

Two type of thin Resistor

1. Carbon Film Resistors

2. Metal Film Resistors

1. 1. 3. 1) Carbon Film Resistors

Carbon Film resistors contains on an insulating material rod or core made of high grade ceramic material
which is called the substrate. A very thin resistive carbon layer or film overlaid around the rod. These
kinds of resistors are widely used in electronic circuits because of negligible noise and wide operating
range and the stability as compared to solid carbon resistors. See Fig.1.4-1

Fig.1.4-1
Construction of Carbon Film Resistors & Its labels.

1. 1. 3. 2) Metal Film Resistors

Metal film resistors are same in construction like Carbon film resistors, but the main difference is
that there is metal (or a mixture of the metal oxides, Nickel Chromium or mixture of metals and
GRADE 11 EPAS 8

glass which is called metal glaze which is used as resistive film) instead of carbon. Metal film
resistors are very tiny, cheap and reliable in operation. Their temperature coefficient is very low
(±2 ppm/°C) and used where stability and low noise level is important.

Metal Film Resistor. Construction and name of internal parts. Fig.1.4-2

1.1.4) Thick Film Resistors

The production method of Thick film resistors is same like thin film resistors, but the difference is
that there is a thick film instead of a thin film or layer of resistive material around. That’s why it is
called Thick film resistors.

Types of thick film resistors.

1. Metal Oxide Resistors

2. Cermet Film Resistors
3. Fusible Resistors
1.1.4.1) Metal Oxide Resistors
By oxidizing a thick film of Tin Chloride on a heated glass rod (substrate) is the simple method
to make a Metal oxide Resistor. These resistors are available in a wide range of resistance with
high temperature stability. In addition, the level of operating noise is very low and can be used
at high voltages.

1.1.4.2) Cermet Oxide Resistors

In the cermet oxide resistors, the internal area contains on ceramic insulation materials. And
then a carbon or metal alloy film or layer wrapped around the resistor and then fix it in a ceramic
metal (which is known as Cermet). They are made in the square or rectangular shape and leads
and pins are under the resistors for easy installation in printed circuit boards. They provide a
stable operation in high temperature because their values do not change with change in
temperature.

Cermet Film Resistor Network Construction Fig.1.4-3

GRADE 11 EPAS 9

1.1.4.3) Fusible Resistors

These kinds of resistors are same like a wire wound resistor. When a circuit power
rating increased than the specified value, then this resistor is fused, i.e. it breaks or
open the circuit. That’s why it is called Fusible resistors. Fusible restores perform
double jobs means they limit the current as well as it can be used as a fuse.
They used widely in TV Sets, Amplifiers, and other expensive electronic circuits.
Generally, the ohmic value of fusible resistors is less than 10 Ohms.

III. Guided Practice

Direction: Enumerate the following type of resistors.

Two type of thin resistor

1. ____________ 2.___________

Three type of thick film resistor

2. ___________ 4.___________ 5.____________

IV. Independent practice

Activity No. 2

Title: Metal Film Resistor

Direction: Draw the actual image of metal film resistor. See fig. 1.4-2

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

DRAW BOX
GRADE 11 EPAS 10

V. Assessment

What is the function of fusible resistor?

VI. Answer key for activity 1

1. Carbon Film Resistors

2. Metal Film Resistors
3. Metal Oxide Resistors
4. Cermet Film Resistors
5. Fusible Resistors

VII. Reference

CBLM

Writer: Benjunly P. Gengone

School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 11

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 3

LEARNING ACTIVITY SHEET NO. 3

Variable Resistors

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

1. 2) Variable Resistors
As the name indicates, those resistors which values can be changed through a dial,
knob, and screw or manually by a proper method. In these types of resistors, there is a
sliding arm, which is connected to the shaft and the value of resistance can be changed
by rotating the arm. They are used in the radio receiver for volume control and tone
control resistance.

Types of Variable Resistors

1. Potentiometers
2. Rheostats
3. Trimmers

1.2.1) Potentiometers
Po4tentiometer is a three terminal device which is used for controlling the level of voltage in the
circuit. The resistance between two external terminals is constant while the third terminal is
connected with moving contact (Wiper) which is variable. The value of resistance can be
changed by rotating the wiper which is connected to the control shaft.
GRADE 11 EPAS 12

Fig.1.4-4

This way, Potentiometers can be used as a voltage divider and these resistors are
called variable composition resistors. They are available up to 10 Mega Ohms.

Fig.1.4-5

1.2.2) Rheostats
Rheostats are a two or three terminal device which is used for the current limiting
purpose by hand or manual operation. Rheostats are also known as tapped resistors or
variable wire wound resistors.
GRADE 11 EPAS 13

Fig.1.4-6

Types of Rheostats resistor and construction of Screw Drive Rheostat

To make a rheostats, they wire wind the Nichrome resistance around a ceramic core and then
assembled in a protective shell. A metal band is wrapped around the resistor element and it can
be used as a Potentiometer or Rheostats (See the below note for difference between Rheostat
and Potentiometer).

Fig1.4-7

Variable wire wound resistors are available in the range of 1 ohm up to 150 Ohms. The
available power rating of these resistors is 3 to 200 Watts. While the most used Rheostats
according to power rating is between 5 to 50 Watts.
GRADE 11 EPAS 14

Wirewound Rheostat Construction Fig.1.4-8

Basically, there is no difference between Potentiometer and Rheostat. Both are variable
resistors. The main difference is the use and circuit operation, i.e. for which purpose we use that
variable resistor?

For example, if we connect a circuit between resistor element terminals (where one terminal is a
general end of the resistor element while the other one is sliding contact or wiper) as a variable
resistor for controlling the circuit current, then it is Rheostats.

In the other hand, if we do the same as mentioned above for controlling the level of voltage,
then this variable resistor would be called a potentiometer. That’s it.

1.2.3) Trimmers
There is an additional screw with Potentiometer or variable resistors for better efficiency and
operation and they are known as Trimmers. The value of resistance can be changed by
changing the position of screw to rotate by a small screwdriver.

Fig.1.4-9
Construction of Different Types of Trimmers.

They are made from carbon composition, carbon film, cermet and wire materials and available in the
range of 50 Ohms up to 5 mega ohms. The power rating of Trimmers potentiometers are from 1/3 to ¾
Watts
GRADE 11 EPAS 15

III. Guided Practice

Direction: Enumerate the three type of variable resistor.

1. ___________ 2.___________ 3.____________

IV. Independent practice

Activity No. 2

Title: Rheostat

Direction: Draw the construction of rheostat. See fig. 1.4-7

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

DRAW BOX

V. Assessment

What is the main Difference between Potentiometer and Rheostats?

VI. Answer key of activity 1

1. Potentiometers
2. Rheostats
3. Trimmers

VII. Reference

CBLM
Writer: Benjunly P. Gengone
School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 16

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 4

LEARNING ACTIVITY SHEET NO. 4

Non Linear Resistors

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

2. Non Linear Resistors

We know that, nonlinear resistors are those resistors, where the current flowing through it
does not change according to Ohm’s Law but, changes with change in temperature or applied
voltage.
In addition, if the flowing current through a resistor changes with change in body temperature,
then these kinds of resistors are called Thermisters. If the flowing current through a resistor
change with the applied voltages, then it is called a Varistors or VDR (Voltage Dependent
Resistors).

Types of Non Linear Resistors.

1. Thermisters
2. Varisters (VDR)
3. Photo Resistor or Photo Conductive Cell or LDR

2.1) Thermisters
Thermisters is a two terminal device which is very sensitive to temperature. In other words, Thermisters
is a type of variable resistor which notices the change in temperature. Thermisters are made from the
cobalt, Nickel, Strontium and the metal oxides of Manganese. The Resistance of a Thermister is inversely
proportional to the temperature, i.e. resistance increases when temperature decrease and vice versa.
GRADE 11 EPAS 17

Fig.1.5-1
Types of Thermisters & Its Construction
Thermisteres has a negative temperature coefficient (NTC) but there is also a PTC
(Positive Temperature Coefficient) which a made from pid barium titanate
semiconductor materials, and their resistance increases when increases in temperature.

2.2) Varisters (VDR)

Varisters are voltage dependent Resistors (VDR) which is used to eliminate the high
voltage transients. In other words, a special type of variable resistors used to protect
circuits from destructive voltage spikes is called varisters.
When voltage increases (due to lighting or line faults) across a connected sensitive
device or system, then it reduces the level of voltage to a secure level i.e. it changes the
level of voltages.

Fig.1.5-2

2.3) Photo Resistor or Photo Conductive Cell or LDR (Light

Dependent Resistors)
Photo Resistor or LDR (Light Dependent Resistors) is a resistor which terminal value of
resistance changes with light intensity. In other words, those resistors, which resistance values
GRADE 11 EPAS 18

changes with the falling light on their surface is called Photo Resistor or Photo Conductive Cell
or LDR (Light Dependent Resistor). The material which is used to make these kinds of resistors
is called photo conductors, e.g. cadmium sulfide, lead sulfide etc.

Fig.1.5-3

Construction of LDR (Light Dependent Resistor), Photo-resistor or photo

conductive cell
When light falls on the photoconductive cells (LDR or Photo resistor), then there is an
increase in the free carriers (electron hole pairs) due to light energy, which reduce the
resistance of semiconductor material (i.e. the quantity of light energy is inversely
proportional to the semiconductor material). It means photo resistors have a negative
temperature coefficient.

Fig.1.5-4
Types of Photo cells, and LDR

2.4) SMD (Surface Mount Technology) Resistors

You can read about SMD Resistor with color coding methods.
Application and Uses of Photo Resistors/Photo Conductive Cells or LDR
These types of resistors are used in burglar alarm, Door Openers, Flame detectors,
Smock detectors, light meters, light activated relay control circuits, industrial, and
commercial automatic street light control and photographic devices and equipments.
Uses / Application of Resistors.
Practically, both types of resistors (Fixed and Variable) are generally used for the
following purposes.

I. For Current control and limiting

II. To change electrical energy in the form of heat energy
III. As a shunt in Ampere meters
IV. As a multiplier in a Voltmeter
V. To control temperature
VI. To control voltage or Drop
GRADE 11 EPAS 19

III. Guided practice

Self-Test

Activity 1

Direction: Enumerate the following type of resistors.

Enumerate the three type of linear resistor.

1. ___________ 2. _____________ 3._____________

Enumerate at least two type of thermistor.

4. ____________ 5.______________

IV. Independent practice

Activity No. 2

Title: LDR

Direction: Draw the construction of LDR . See fig. 1.5-3

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

DRAW BOX
GRADE 11 EPAS 20

V. Assessment

What is the application of varister?

VI. Answer key of activity 1

1. Thermisters
2. Varisters (VDR)
3. Photo Resistor or Photo Conductive Cell or LDR
4. Bead thermistor
5. Disc thermistor, Glass prob, Special prob, Washer, Special mouned bead ring thermisthor.

VII. Reference

CBLM
Writer: Benjunly P. Gengone
School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 21

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 5

LEARNING ACTIVITY SHEET NO. 5

Capacitors

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

Capacitor Symbols
Variable Capacitor

Non Polarized Capacitor

(co-moving) variable capacitors

Polarized Capacitor

Trimmer capacitor
GRADE 11 EPAS 22

Actual Image of Capacitor

Fig.1.6-1

Capacitor
A capacitor is a component designed to create and hold an electric field,
which means that capacitors can store energy . It takes energy to pull electric
charges apart and so establish an electric field between the separated charges.
With the charges held apart, the energy is stored in the electic field, and when
the charges are allowed to move again, the stored energy becomes available
to do something useful. Capacitors are like little batteries.

Fig1.6-2
GRADE 11 EPAS 23

Styles of aluminum and tantalum electrolytic capacitors

Aluminum electrolytic capacitors form the bulk of the electrolytic capacitors used in electronics
because of the large diversity of sizes and the inexpensive production. Tantalum electrolytic
capacitors, usually used in the SMD version, have a higher specific capacitance than the aluminum
electrolytic capacitors and are used in devices with limited space or flat design such as laptops.
They are also used in military technology, mostly in axial style, hermetically sealed. Niobium
electrolytic chip capacitors are a new development in the market and are intended as a replacement
for tantalum electrolytic chip capacitors.

Different styles of aluminum electrolytic capacitors

1. Fig.1.6-2

Aluminum electrolytic SMD "V" (vertical) chip capacitors

2. Fig1.6-3

Axial style aluminum electrolytic capacitors

3. Fig.1.6-4

Radial or single-ended aluminum electrolytic capacitors

4. Fig.1.6-5

Aluminum electrolytic capacitor with "snap-in" terminals

GRADE 11 EPAS 24

5. Fig.1.6-6

Aluminum electrolytic capacitors with screw terminals

6. Fig.1.6-7

Typical tantalum SMD capacitor

7. Fig.1.6-8

Dipped lacquered tantalum “pearl” capacitors

8. Fig.1.6-9

Axial style tantalum electrolytic capacitors

9. Fig.1.6-10

Dry electrolytic capacitor with 100 µF and 150 V

Tantalum capacitors
One of the first tantalum electrolytic capacitors were developed in 1930 by Tansitor Electronic Inc.
USA, for military purposes. The basic construction of a wound cell was adopted and a tantalum
anode foil was used together with a tantalum cathode foil, separated with a paper spacer
impregnated with a liquid electrolyte, mostly sulfuric acid, and encapsulated in a silver case.
GRADE 11 EPAS 25

Niobium capacitors
Another price explosion for tantalum in 2000/2001 forced the development of niobium electrolytic
capacitors with manganese dioxide electrolyte, which have been available since 2002.Niobium is a
sister metal to tantalum and serves as valve metal generating an oxide layer during anodic oxidation.

Water based electrolytes

With the goal of reducing ESR for inexpensive non-solid e-caps from the mid-1980s in Japan, new
water-based electrolytes for aluminum electrolytic capacitors were developed. Water is inexpensive,
an effective solvent for electrolytes, and significantly improves the conductivity of the electrolyte

Fig.1.6-11

Standard electrolytic capacitors, and aluminum as well as tantalum and niobium

electrolytic capacitors are polarized and generally require the anode electrode voltage
to be positive relative to the cathode voltage.
Nevertheless, electrolytic capacitors can withstand for short instants a reverse voltage
for a limited number of cycles. In detail, aluminum electrolytic capacitors with non-solid
electrolyte can withstand a reverse voltage of about 1 V to 1.5 V.
GRADE 11 EPAS 26

Fig.1.6-12

Type of Variable Capacitor

Fig.1.6-11

Fig.1.6-12

Tuning Capacitor
GRADE 11 EPAS 27

Variable Capacitor

Variable capacitors may have their capacitance changed by mechanical motion. Generally two
versions of variable capacitors has to be to distinguished.

1. Tuning capacitor – variable capacitor for intentionally and repeatedly tuning an oscillator
circuit in a radio or another tuned circuit.
2. Trimmer capacitor – small variable capacitor usually for one-time oscillator circuit internal
adjustment.

Variable capacitors include capacitors that use a mechanical construction to change the distance
between the plates, or the amount of plate surface area which overlaps. They mostly use air as
dielectric medium.

Semiconductive variable capacitance diodes are not capacitors in the sense of passive
components but can change their capacitance as a function of the applied reverse bias voltage
and are used like a variable capacitor. They have replaced much of the tuning and trimmer
capacitors.

Guided practice

Activity 1

Self- Test

Direction: Name the following type of capacitors in separate activity sheet.

1. _________

2. ___________

3. ___________

4. __________

5. __________
GRADE 11 EPAS 28

6. __________

7. __________

8. _________

9. _________

10. __________

What is the function of variable capacitor? (5 pts)

VIII. Independent practice

Activity No. 2

Title: Capacitor symbol

Direction: Draw the symbols of capacitor .

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

(Co-moving) Variable capacitor / Trimmer Capacitor

Assessment

What is the function of variable capacitor?

GRADE 11 EPAS 29

Answer key of activity 1

1. Tuner capacitor
2. Aluminum electrolytic SMD
3. Axial style aluminum electrolytic
4. Radial or single-ended aluminum electrolytic
5. Aluminum electrolytic capacitor with "snap-in" terminals
6. Aluminum electrolytic capacitors with screw terminals
7. Typical tantalum SMD capacitor
8. Dipped lacquered tantalum “pearl” capacitors
9. Axial style tantalum electrolytic capacitors
10. Dry electrolytic capacito

IX. Reference

CBLM
Writer: Benjunly P. Gengone
School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 30

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 6

LEARNING ACTIVITY SHEET NO. 6

Transistor

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

Transistor Symbols

Unipolar

Enhancement mode, N-channel MOSFET

N-channel junction gate field-effect transistor

(JFET)
Enhancement mode, P-channel MOSFET

P-channel junction gate field-effect transistor

(JFET)

Metal-Oxide-Semiconductor Field-Effect
Transistor (MOSFET)
GRADE 11 EPAS 31

Bipolar

NPN darlington

NPN bipolar junction transistor (BJT)

PNP darlington
PNP bipolar junction transistor (BJT)

Different Types of Transistors and Their Functions

Transistor is an active component and that is establishing in all over electronic circuits. They are
used as amplifiers and switching apparatus. They are used in high and low level, frequency
stages, oscillators, modulators, detectors and in any circuit need to perform a function. In
digital circuits they are used as switches. There are a huge number of manufacturers
approximately the world who produces semiconductors (transistors are members of this family
of apparatus), so there are exactly thousands of different types. There are low, medium and
high power transistors, for functioning with high and low frequencies, for functioning with very
high current and or high voltages.

Transistor Symbol

A diagrammatic form of n-p-n and p-n-p transistor is exposed. In circuit is a connection drawn form is
used. The arrow symbol defined the emitter current. In the n-p-n connection we identify electrons flow
into the emitter. This means that conservative current flows out of the emitter as an indicated by the
outgoing arrow. Equally it can be seen that for p-n-p connection, the conservative current flows into the
emitter as exposed by the inward arrow in the figure. See Fig1.7-1
GRADE 11 EPAS 32

Transistor Symbols Fig1.7-1

There are so many types of transistors and they each vary in their characteristics and each has
their possess advantages and disadvantages. Some types of transistors are used mostly for
switching applications. Others can be used for both switching and amplification. Still other
transistors are in a specialty group all of their own, such asphototransistors, which react to the
amount of light shining on it to produce current flow through it. Below is a list of the different
types of transistors; we will go over the characteristics that create them each up

Bipolar Junction Transistor (BJT)

Bipolar Junction Transistors are transistors which are built up of 3 regions, the base, the collector,
and the emitter. Bipolar Junction transistors, different FET transistors, are current-controlled
devices. A small current entering in the base region of the transistor causes a much larger current
flow from the emitter to the collector region. Bipolar junction transistors come in two major
types, NPN and PNP. A NPN transistor is one in which the majority current carrier are electrons.
Electron flowing from the emitter to the collector forms the base of the majority of current flow
through the transistor. The further types of charge, holes, are a minority. PNP transistors are the
opposite. In PNP transistors, the majority current carrier is holes.

Bipolar Junction Transistor pins

Fig.1.7-2
GRADE 11 EPAS 33

III. Guided practice

Activity 1

Self-Test

Direction: Enumerate the five unipolar transistor

1. ____________

2. ____________

3. ___________

4. ___________

5. ___________

IV. Independent practice

Activity No. 2

Title: Bipolar transistor symbol

Direction: Draw the symbols of unipolar transistor .

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

DRAW BOX

NPN bipolar junction transistor / PNP bipolar transistor

GRADE 11 EPAS 34

V. Assessment: What are the three region of Bipolar Junction Transistor

1. ____________ 2. ____________ 3.________________

VI. Answer key of activity 1

1. N-channel junction gate field-effect transistor (JFET)
2. P-channel junction gate field-effect transistor (JFET)
3. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
4. Enhancement mode, N-channel MOSFET
5. Enhancement mode, P-channel MOSFET

VII. Reference

CBLM

Writer: Benjunly P. Gengone

School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 35

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 7

LEARNING ACTIVITY SHEET NO. 7

Field Effect Transistor

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

Field Effect Transistor

Field Effect Transistors are made up of 3 regions, a gate, a source, and a drain. Different bipolar
transistors, FETs are voltage-controlled devices. A voltage placed at the gate controls current
flow from the source to the drain of the transistor. Field Effect transistors have a very high input
impedance, from several mega ohms (MΩ) of resistance to much, much larger values. This high
input impedance causes them to have very little current run through them. (According to ohm’s
law, current is inversely affected by the value of the impedance of the circuit. If the impedance is
high, the current is very low.) So FETs both draw very little current from a circuit’s power
source.

Field Effect Transistor

Fig.1.8-1

Thus, this is ideal because they don’t disturb the original circuit power elements to which they
are connected to. They won’t cause the power source to be loaded down. The drawback of FETs
is that they won’t provide the same amplification that could be gotten from bipolar transistors.
GRADE 11 EPAS 36

Type of Field Effect

1. JFET
2. MOSFET

Bipolar transistors are superior in the fact that they provide greater amplification, even though
FETs are better in that they cause less loading, are cheaper, and easier to manufacture. Field
Effect Transistors come in 2 main types: JFETs and MOSFETs. JFETs and MOSFETs are very
similar but MOSFETs have an even higher input impedance values than JFETs. This causes even
less loading in a circuit.

Fig.1.8-2

Heterojunction Bipolar Transistor (HBT)

AlgaAs/GaAs heterojunction bipolar transistors (HBTs) are used for digital and analog
microwave applications with frequencies as high as Ku band. HBTs can supply faster switching
speeds than silicon bipolar transistors mostly because of reduced base resistance and collector-to-
substrate capacitance. HBT processing requires less demanding lithography than GaAs FETs,
therefore, HBTs can priceless to fabricate and can provide better lithographic yield.
GRADE 11 EPAS 37

This technology can also provide higher breakdown voltages and easier broadband impedance
matching than GaAs FETs. In assessment with Si bipolar junction transistors (BJTs), HBTs show
better presentation in terms of emitter injection efficiency, base resistance, the base-emitter
capacitance, and cutoff frequency. They also present a good linearity, low phase noise and high
power-added efficiency. HBTs are used in both profitable and high-reliability applications, such
as power amplifiers in mobile telephones and laser drivers.

Darlington Transistor

A Darlington transistor sometimes called as a “Darlington pair” is a transistor circuit that is made
from two transistors. Sidney Darlington invented it. It is like a transistor, but it has much higher
ability to gain current. The circuit can be made from two discrete transistors or it can be inside an
integrated circuit. The hfe parameter with a Darlington transistor is every transistors hfe
multiplied mutually. The circuit is helpful in audio amplifiers or in a probe that measures very
small current that goes through the water. It is so sensitive that it can pick up the current in the
skin. If you connect it to a piece of metal, you can build a touch-sensitive button.

Darlington Transistor Fig.1.8-3

Schottky Transistor

A Schottky transistor is a combination of a transistor and a Schottky diode that prevents the
transistor from saturating by diverting the extreme input current. It is also called a Schottky-
clamped transistor. See Fig.1.8-4

Schottky Transistor Fig.1.8-4

GRADE 11 EPAS 38

Multiple-Emitter Transistor

A multiple-emitter transistor is specialize bipolar transistor frequently used as the inputs of

transistor transistor logic(TTL) NAND logic gates. Input signals are applied to the emitters.
Collector current stops flowing simply, if all emitters are driven by the logical high voltage, thus
performing a NAND logical process using a single transistor. Multiple-emitter transistors replace
diodes of DTL and agree to reduction of switching time and power dissipation.

Multi-Emmiter Transistor Fig.1.8-5

Dual Gate MOSFET

One form of MOSFET that is a particularly popular in several RF applications is the dual gate
MOSFET. The dual gate MOSFET is used in many RF and other applications where two control
gates are required in series. The dual gate MOSFET is fundamentally a form of MOSFET where,
two gates are made-up along the length of the channel one after the other.

Fig.1.8-6
Dual Gate Mosfet

Single Gate Mosfet Fig.1.8-7

GRADE 11 EPAS 39

In this way, both gates influence the level of current flowing between the source and drain. In
effect, the dual gate MOSFET operation can be considered the same as two MOSFET devices in
series. Both gates affect the general MOSFET operation and therefore the output. The dual gate
MOSFET can be used in a lot of applications including RF mixers /multipliers, RF amplifiers,
amplifiers with gain control and the like.

Junction FET Transistor

The Junction Field Effect Transistor (JUGFET or JFET) has no PN-junctions but in its place has
a narrow part of high resistivity semiconductor material forming a “Channel” of either N-type or
P-type silicon for the majority carriers to flow through with two ohmic electrical connections at
either end normally called the Drain and the Source respectively. There are a two basic
configurations of junction field effect transistor, the N-channel JFET and the P-channel JFET.
The N-channel JFET’s channel is doped with donor impurities meaning that the flow of current
through the channel is negative (hence the term N-channel) in the form of electrons.

Juntion FET Transistor Fig.1.8-8

GRADE 11 EPAS 40

Avalanche Transistor
An avalanche transistor is a bipolar junction transistor designed for process in the region of its collector-
current/collector-to-emitter voltage characteristics beyond the collector-to-emitter breakdown voltage,
called avalanche breakdown region. This region is characterized by the avalanche breakdown, an
occurrence similar to Townsend discharge for gases, and negative differential resistance. Operation in the
avalanche breakdown region is called avalanche-mode operation: it gives avalanche transistors the
capability to switch very high currents with less than a nanosecond rise and fall times (transition times).

Transistors not particularly designed for the purpose can have reasonably consistent avalanche
properties; for example 82% of samples of the 15V high-speed switch 2N2369, manufactured
over a 12-year period, were capable of generating avalanche breakdown pulses with rise time of
350 ps or less, using a 90V power supply as Jim Williams writes.

Diffusion Transistor
A diffusion transistor is a bipolar junction transistor (BJT) formed by diffusing dopants into a
semiconductor substrate. The diffusion process was implemented later than the alloy junction
and grown junction processes for making BJTs. Bell Labs developed the first prototype diffusion
transistors in 1954. The original diffusion transistors were diffused-base transistors. These
transistors still had alloy emitters and sometimes alloy collectors like the earlier alloy-junction
transistors. Only the base was diffused into the substrate. Sometimes the substrate produced the
collector, but in transistors like Philco’s micro alloy diffused transistors the substrate was the
bulk of the base.

III. Guided practice

Activity 1

Self- Test

Direction: Enumerate the following.

three region of Field Effect Transistor

1. _____________ 2._____________ 3._____________

Two type of Effect Transistor

4.______________ 5._____________
GRADE 11 EPAS 41

IV. Independent practice

Activity No. 2

Title: Single gate MOSFET

Direction: Draw the Single Gate MOSFET

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

DRAW BOX

Single gate MOSFET

VI.Assessment

Enumerate the three region of FET.

1. ___________ 2.__________ 3.__________

VII.Answer key of activity 1

1. Gate
2. Drain
3. Source

VII.Reference

CBLM
Writer: Benjunly P. Gengone
School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph
GRADE 11 EPAS 42

ELECTRONIC PRODUCT ASSEMBLY AND SERVICING NC II

GRADE 11

QUARTER 2 WEEK 8

LEARNING ACTIVITY SHEET NO. 8

DIODES

Name of Learner :________________________________ Section:______________

School :_________________________________________ Date : ______________

I. Learning Competency: Recognize components, assemblies, or objects TLE_IAEPAS9- 12PITD-IIb-c- 13

II. Key Concept

Diodes

Rectifier diode

nel diode

Schottky diode

Light Emitting Diode (LED)

GRADE 11 EPAS 43

Photodiode

Varicap

Shockley diode

Silicon-controlled rectifier (SCR)

Constant-current diode
GRADE 11 EPAS 44
GRADE 11 EPAS 45

P-N Junction Diode

The P-N junction diode is made up of semiconductor material. It consists of two layers
of semiconductors. One layer is doped with P-type material and the other layer with N-
type material. The combination of these both P and N-type layers form a junction known
as the P-N junction. Hence the name P-N junction diode.

It allows the flow of current in the forward direction and blocks it in reverse direction.
They are also known as rectifier diode used for rectification.

There are different types of diodes that use the P-N junction with variation in doping
concentration. They are discussed below.

Small Signal Diode

It is a type of P-N junction diode which operates on low voltage signals. Its junction area
is very small. Due to which, the junction has less capacitance & low charge storing
capacity. It enables the small signal diode to have high switching speed with very fast
recovery time. However, its limitations are low voltage and current parameters.

Due to its high switching speed, these types of diodes are used in circuits with high
frequencies.

Rectifier Diode

A rectifier diode is a type of P-N junction diode, whose P-N junction area is very large.
This results in high capacitance in reverse direction. It has low switching speed.
GRADE 11 EPAS 46

This is the most common and most used type of a diode. These types of diodes can
handle heavy current and are used in converting AC into DC (Rectification).

Schottky Diode

The Schottky diode, named after a German physicist Walter H. Schottky, is a type of
diode which consists of a small junction between an N-type semiconductor and a metal.
It has no P-N junction.

The plus point of the Schottky diode is that it has very low forward voltage drop and
fast switching. As there is no capacitive junction (P-N junction), the Schottky diode
switching speed is very fast.

The limitation of Schottky diode is that it has low reverse breakdown voltage and high
reverse leakage current.

Super Barrier Diodes

Super barrier diodes (SBR) are also rectifier diodes but they have a low forward
voltage drop just like a Schottky diode. They have low reverse leakage current just
like a normal P-N junction diode.

SBR uses MOSFET by making short contact between its gate and source.

SBR has a low forward voltage drop, less reverse leakage current and fast switching
capability.
GRADE 11 EPAS 47

Light Emitting Diode (LED)

The light emitting diode is also a type of P-N junction diode that emits light in
the forward bias configuration.

LED is made up of a direct-band semiconductor. When the charge carriers (electrons)

cross the barrier and recombine with electron holes on the other side, they emit photon
particles (light). While the color of the light depends on the energy gap of the
semiconductor.

LED converts electrical energy into light energy.

Photodiode

The photodiode is a type of P-N junction diode that converts the light energy into
electrical current. Its operation is opposite to that of an LED.
GRADE 11 EPAS 48

Every semiconductor diode is affected by optical charge carriers. It is why they are
packaged in a light blocking material.

In the photodiode, there is a special opening that allows the light to enter its sensitive
part.

When the light (Photon particles) strikes the PN junction, it creates an electron-hole pair.
These electron and hole flow out as electrical current. To increase its efficiency, a
PIN junction diode is used.

A photodiode is used in reverse bias and they can be used in solar cells.

Laser Diode

A laser diode is similar to LED because it converts electrical energy into light energy.
But unlike LED, Laser diode produces coherent light.

The laser diode consists of a PIN junction, where electron and holes combine together
in the intrinsic (I) region. when they combine, it generates a laser beam.
GRADE 11 EPAS 49

Laser diodes are used in optical communication, laser pointer, CD drives and laser
printer etc.

Tunnel Diode

Tunnel diode was invented by Leo Esaki in 1958 for which he received Nobel prize in
1973, which is why it is also known as Esaki diode.

A tunnel diode is a heavily doped P-N junction diode. It works on the principle of the
tunneling effect. Due to heavy doping concentration, the junction barrier becomes very
thin. This allows the electron to easily escape through the barrier. This phenomenon is
known 4as tunneling effect.

The Tunnel diode has a region in its VI curve where the current decreases as the
voltage increases. This region is known as the negative resistance region. The tunnel
diode operates in this region in different applications such as an oscillator and a
microwave amplifier.

The symbol with VI characteristic curve of tunnel diode is given below:

The tunnel diode also conducts current in reverse direction & it is a fast switching device.

Zener Diode

Zener diode is named after Clarence Malvin Zener who discovered the zener effect.

It is a type of diode, which not only allows the flow of current in the forward direction but
also in reverse direction. when the reverse voltage reaches the breakdown voltage
known as Zener voltage it allows the current flow.

The Zener diode has heavier doping concentration than a normal P-N junction diode.
Hence, it has a very thin depletion region.

In forward bias, it operates as a simple P-N junction diode (Rectifier).

GRADE 11 EPAS 50

In reverse bias, it blocks until the reverse voltage reaches breakdown. After that, it
allows the current flow with a constant voltage drop.

Zener reverse breakdown is caused due to two reason i.e. electron quantum
tunneling and Avalanche breakdown.

A Zener diode is mainly used in reverse bias configuration. It provides a stabilized

voltage for protection of circuits from overvoltage.

Backward Diode

The backward diode or the back diode is a P-N junction diode, whose operation is
similar to that of tunnel diode and Zener diode. But the operating voltages are much
lower.

A backward diode is essentially a tunnel diode, whose one side of the junction has
relatively less doping concentration compared to the other side.

In the forward bias, it operates as a tunnel diode but its tunneling effect is much
reduced as compared to tunnel diode. Otherwise, it operates as a normal P-N junction
diode.

In reverse bias, it operates as a Zener diode but the breakdown voltages are much
lower.
GRADE 11 EPAS 51

It is not widely used but it can be used for rectification of a small voltage signal (0.1 to
0.6v). Due to its fast switching speed, it can be used as a switch in RF mixer and
multiplier.

Avalanche Diode

The Avalanche diode is a P-N junction diode that is specifically designed to operate in
the avalanche breakdown region.

Avalanche breakdown is a phenomenon where sufficient reverse voltage is applied to

the P-N junction. Due to which, the minority carrier ionizes & starts a heavy current flow
in reverse direction.

Avalanche diode works electrically similar to the Zener diode. However, the doping
concentration of a Zener diode is relatively higher as compared to an avalanche diode.

The heavy doping inside the Zener diode creates a small junction & low voltages can
easily break it. However, the avalanche diode has a wide junction because of light
doping concentration. Thus, it requires a high voltage for its breakdown. This wide
junction makes it a better surge protector compare to a simple Zener diode.

Transient Voltage Suppression (TVS) Diode

Transient voltage suppression diode or TVS diode is a type of avalanche diode that
protects the circuit form high voltage surges.

TVS diode has the capability of handling high voltages as compared to avalanche diode.

Unidirectional TVS diode operates similar to avalanche diode. it acts as a rectifier in

forward bias & surge protector in reverse bias.

Bidirectional TVS diode acts as two avalanche diodes opposing each other in series. It
is manufactured as a single component. It operates both ways and provides surge
protection when used in parallel with a circuit.

Gold Doped Diode

In such type of diode, Gold or platinum is used as the dopant (doping material). It
enables the diode to operate at fast switching speed but at the expense of increasing
the forward voltage drop. Also, its reverse leakage current is higher than a normal P-N
junction diode.
GRADE 11 EPAS 52

Constant Current Diode

The constant current diode AKA the current-limiting diode (CLD) is a two terminal
diode made from JFET. It regulates the current flow through it up to a fixed level.

CLD is made by making short contact between the gate and the source of JFET. It limits
the current just like Zener diode limits voltage.

Step Recovery Diode

Step recovery diode or snap-off diode is a P-N junction diode which abruptly ceases the
flow of current when its direction is reversed.

The SRD (Step Recovery Diode) is made of a P-N junction with very low doping
concentration near the junction. Due to which, the charge carriers (electron and holes)
near the junction also decrease in number. Hence, the charge storing capacity near the
junction becomes negligible. This enables the SRD to switch from ON to OFF very fast.

In a normal diode, when it is switched from forward conduction to reverse cutoff, the
current flows briefly because of the stored charge. Due to which, the normal diode takes
some time in switching. The SRD does not store charge, So it can cease the current
flow instantaneously.

Peltier Or Thermal Diode

Peltier or thermal diode is a type of diode whose thermal resistance is different in one
direction than the other direction. So the heat generated flows in one direction to one
side (terminal) and leaving the other side cooler.

This diode is used in the application of heat monitoring in microprocessor and in

refrigerators for cooling effect.
GRADE 11 EPAS 53

Vacuum Diode

It is the simplest form of a diode made from a vacuum tube and two electrodes (cathode
and anode). The Anode and Cathode are enclosed inside the vacuum tube (empty
glass).

When the cathode heats up it emits electrons, the anode picks up the electrons and the
flow continues.

The cathode can be heated directly or indirectly.

In forward bias, the free electron on cathode release into the vacuum after getting heat
up. The anode collects these electrons and the current flows.

In reverse bias, the free electron in the vacuum gets repelled by the anode as it is
connected to the negative terminal, therefore the current does not flow.

Thus, the current flows in only one direction.

Varactor Diode

Varactor diode also known as Vericap diode are voltage controlled capacitors. They
have a P-N junction with variable junction capacitance.
GRADE 11 EPAS 54

The varactor diode operates under reverse bias conditions. The depletion layer between
the P and N-type material is varied by changing the reverse voltage.

All diode’s junction capacitance varies with reverse voltage but Varactor diode is able to
use this effect with a high range of capacitance.

The applications of Varactor diodes are as a voltage controlled oscillator in the

phase-lock loop, in RF tuning filters and frequency multipliers.

Gunn Diode

Gunn diode AKA “Transferred Electron Device” (TED) is a type of diode having
negative resistance like tunnel diode. It is named after a British physicist J.B Gunn who
discovered the “Gunn Effect” in 1962.

The Gunn diode does not have P-N junction. In fact, it consists of only N-type material,
which is why it does not rectify AC or work like a normal diode. It is also the reason
many people call it “Transferred Electron Device” (TED) instead of a diode.

It consists of three N-type layers; two of them which are on the terminal’s side have a
higher doping concentration whereas the middle thin layer has a lighter doping
concentration.

When the voltage is applied to Gunn diode, initially its current increases with increase in
voltage.
GRADE 11 EPAS 55

At higher voltage, the resistance of the middle layer starts increasing with voltage. It
results in the fall of the current flow. This is the negative resistance region & Gunn
diode operates in this region.

The Gunn diode is used in an oscillator for generating microwaves of high frequency.

PIN Diode

PIN diode is a three-layer diode i.e. P-layer, I-layer & N-layer. The ‘I‘ intrinsic
semiconductor layer is placed between heavily doped P and an N-type semiconductor.

The electron and holes from N and P-type region respectively flow to the intrinsic region
(I). Once the “I” region fills completely with electron-holes, the diode starts conduction.

In reverse bias, the wide intrinsic layer in the diode can block and tolerate high reverse
voltages.

At higher frequency, the PIN diode will act as a linear resistor. It is because of the fact
that the PIN diode has poor reverse recovery time. The reason is that the heavily
charged “I” region does not get enough time to discharge during fast cycles.

While at low frequency, it acts as a rectifier diode. Because it gets enough time to
discharge & turn off during the cycle.

If a photon enters the “I” region of a reversed bias PIN diode, it produces an electron-
hole pair. This electron-hole pair flows out as current. So it is also used in
photodetectors and photovoltaic cells.

PIN diodes are used in high voltage rectification, in RF application as attenuator &
switching element.

Silicon Controlled Rectifier (SCR)

SCR is a four-layer P-N-P-N semiconductor switching device. It has three terminals

Anode, Cathode, and Gate.
GRADE 11 EPAS 56

SCR is essentially a diode with an external control input known as the gate input. It
allows current flow in one direction.

When SCR is connected in the forward bias, it won’t yet allow the flow of current. This is
known as the forward blocking mode.

To make SCR conduct in the forward mode, it either needs the necessary voltage to
cross its breakover limit or by applying a positive pulse to its gate input.

To turn off SCR, either decrease the current below the holding current point or turn off
the gate input and short circuit the anode-cathode momentarily.

In reverse bias, the SCR does not allow current even after applying gate input. But if the
reverse voltage reaches reverse breakdown voltage, the SCR starts conduction due to
avalanche phenomena.

SCR is used for controlling high power circuits, rectification of high power AC

Shockley Diode

Shockley diode is a four layer PNPN diode. It resembles SCR but it has no control or
gate input.

Shockley diode tends to stay ‘ON’ once it is turned ‘ON’ & tends to stay ‘OFF’ when it is
turned ‘OFF’.
GRADE 11 EPAS 57

As we know that the Shockley diode has no gate input so the only way to switch it ‘ON’
is by applying Forward voltage greater than its breakdown voltage.

After applying the voltage greater than its breakdown voltage, it will allow the current
flow.

During conduction state, it won’t turn off even if the voltage decreases from its
breakdown voltage. To make it switch ‘OFF’, the voltage needs to be sufficiently lower
than its breakdown voltage.

Point Contact Diode

It is also known as Cat Whisker diode or crystal diode.

It is a type of diode in which a small point junction is formed between a metal wire & N-
types semiconductor crystal.

“cat whisker” is a thin springy wire made of Phosphorus bronze or tungsten. It makes a
point contact junction with an N-type semiconductor, Hence the name point-contact
diode.

As the junction formed is very small so the junction capacitance of point contact diode is
very low. Thus, there is very low charge storage capacity, which makes it a fast
switching device.
GRADE 11 EPAS 58

During manufacturing, passing a relatively large current through the cat whisker wire
results in the formation of small a P-region upon the N-type semiconductor. This small
junction acts as a P-N junction.

Point contact diodes are used for low voltage signal & in microwave mixer & detectors.

These are some of the most common types of diodes used in designing and operation
of electronic circuits. If you want to add more kinds of diodes, let us know in the
comment box below.

III. Guided practice

Activity 1

Self-Test

Direction: Fill in the blank to complete the type of diode.

1. ___________is a type of P-N junction diode, whose P-N junction area is very large.
This results in high capacitance in reverse direction. It has low switching speed.
2. ___________is a type of diode having negative resistance like tunnel diode.
3. ___________s a type of diode whose thermal resistance is different in one direction
than the other direction.
4. ___________is a four-layer P-N-P-N semiconductor switching device
5. ___________ is a type of diode, which not only allows the flow of current in the
forward direction but also in reverse direction.

IV.Independent practice

Activity No. 2

Title: Cat Whisker diode or crystal diode.

Direction: Draw the Cat Whisker diode

CRITERIA
Neatness 10 pts. Clarity 10 pts. Total 20 pts.

CAT WHISKER
GRADE 11 EPAS 59

V.Assessment

Write the symbols of the following diode:

1. Rectifier ___________
2. Zener ___________
3. LED ___________
4. Photo diode ___________
5. Vricap ___________

VI.Answer key of activity 1

1. Rectifier diode
2. Tunnel Diode
3. Thermal Diode
4. SCR
5. Zener

VII.Reference

CBLM
Writer: Benjunly P. Gengone
School: Trento National High School
Division: Agusan del Sur
Contact information: benjunly.gengone@deped.gov.ph