Junctions the barrier for holes moving from p to n. The depletion region on each side is analogous to that described in Eq. (5-23), except that we must account for the different dielectric constants in the two semiconductors. To draw the band diagram for any semiconductor device involving homojunctions or heterojunctions, we need material parameters such as the band gap and the electron affinity which depend on the semiconductor ma- terial but not on the doping, and the work function which depends on the semiconductor as well as the doping. The electron affinity and work function are referenced to the vacuum level. The true vacuum level (or global vacu- tim level), £18 the potential energy reference when an electron is taken out of the semiconductor to infinity, where it sees no forces. Hence, the true vacuum level is a constant (Fig. 5-45). That introduces an apparent En wT | os bey EE o Fa re = AE,+AE, — a Ex -. 4, — * fe Ba Equtloc) a¥o= 9(Vor + Vox) © a Vou _ Nex t, 5 Mae a Vou ~ Nat 236 Chopter § 235 igure Sas ‘An ideal hetero- junction beween a prype, wide band gap tomi conductor and an type narrower band gop semi- ‘conductor: {c) band dia. grams before join ing; (b) band discontinuities ‘ond band bending at equilibrium, contradiction, however, because looking at the band bending in a si