Semiconductor STJ828M

P-Channel Enhancement-Mode MOSFET

Description
• High speed switching application.
• Analog switch application.
Features
• -2.5V Gate drive.
• Low threshold voltage : Vth = -0.5~ -1.5V.
• High speed.

Ordering Information
Type NO. Marking Package Code

STJ828M J828 TO-92M

Outline Dimensions unit : mm

4.0±0.1
3.0±0.1

0.44 REF

0.52 REF 2.15 Typ.

11.85 Typ.

14.0±0.40

1.27 Typ.

2.54 ± 0.1.

PIN Connections
1. Source
2.3±0.1.

2. Drain
3. Gate
0.42 Typ.
0.7 Typ.

3.0±0.1

3.8 Min.

KST-I016-000 1
 STJ828M

Absolute maximum ratings (Ta=25°C)

Characteristic Symbol Ratings Unit
Drain-Source voltage VDS -20 V
Gate-Source voltage VGSS ±7 V
DC Drain current ID -50 mA
Drain Power dissipation PD 400 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C

Electrical Characteristics (Ta=25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drian-Source breakdown voltage BVDSS ID=-100µA, VGS=0 -20 V
Gate-Threshold voltage Vth ID=-0.1mA, VDS=-3V -0.5 -1.5 V
Drain cut-off current IDSS VDS=-20V, VGS=0 -1 µA
Gate leakage current IGSS VGS=±7V, VDS=0 ±1 µA
Drain-Source on-resistance RDS(ON) VGS=-2.5V, ID=-10mA 40 Ω
Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 15 mS
Input capacitance Ciss VDS=-3V, VGS=0, f=1MHz 10.4 pF
Output capacitance Coss VDS=-3V, VGS=0, f=1MHz 8.4 pF
Reverse Transfer capacitance Crss VDS=-3V, VGS=0, f=1MHz 2.8 pF
VDD=-3V, ID=-10mA
Turn-on time tON 0.15 ㎲
VGEN=0~-2.5V
VDD=-3V, ID=-10mA
Turn-off time tOFF 0.13 ㎲
VGEN=0~-2.5V

*. Switching Time Test Circuit

KST-I016-000 2
 STJ828M
Electrical Characteristic Curves

Fig1 ID - VDS Fig2 ID - VDS

℃ ℃

Fig3 IDR - VDS Fig4 ID - VGS

100℃ - ℃

Fig5 Yfs - ID Fig6 C - VDS

℃
℃

KST-I016-000 3
 STJ828M

Fig7 VDS(on) - ID Fig8 t - ID

G
℃
Ω

Fig. 9 PD - Ta

KST-I016-000 4
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