Silicon Junction FETs (Small Signal)

2SK301
Silicon N-Channel Junction FET

For low-frequency amplification

unit: mm
For switching
5.0±0.2 4.0±0.2

5.1±0.2
■ Features
● Low noies, high gain
● High gate to drain voltage VGDO

13.5±0.5
■ Absolute Maximum Ratings (Ta = 25°C) +0.2
0.45 –0.1 0.45 –0.1
+0.2

Parameter Symbol Ratings Unit 1.27 1.27

Drain to Source voltage VDSX 55 V

2.3±0.2
−55
1 2 3
Gate to Drain voltage VGDO V
1: Drain
Gate to Source voltage VGSO −55 V 2.54±0.15
2: Gate
Drain current ID ±30 mA 3: Source
JEDEC: TO-92
Gate current IG 10 mA EIAJ: SC-43
TO-92 Type Package
Allowable power dissipation PD 250 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C

■ Electrical Characteristics (Ta = 25°C)

Parameter Symbol Conditions min typ max Unit
Drain to Source cut-off current IDSS* VDS = 10V, VGS = 0 1 20 mA
Gate to Source leakage current IGSS VGS = −30V, VDS = 0 −10 nA
Gate to Drain voltage VGDC IG = −100µA, VDS = 0 −55 −80 V
Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA −5 V
Mutual conductance gm VDS = 10V, VGS = 0, f = 1kHz 2.5 7.5 mS
Input capacitance (Common Source) Ciss 6.5 pF
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss 1.9 pF
VDS = 10V, VGS = 0, Rg = 100kΩ
Noise figure NF 0.5 dB
f = 100Hz

* IDSS rank classification

Runk P Q R S
IDSS (mA) 1 to 3 2 to 6.5 5 to 12 10 to 20

1
Silicon Junction FETs (Small Signal) 2SK301

PD  Ta ID  VDS ID  VDS
320 5 10
Ta=25˚C Ta=25˚C
Allowable power dissipation PD (mW)

280
4 8
VGS=0V
240

Drain current ID (mA)

Drain current ID (mA)

200
3 6 – 0.2V
VGS=0
160 – 0.2V
– 0.4V
2 – 0.4V 4
120
– 0.6V
– 0.6V
80
– 0.8V
1 2
– 0.8V
40 – 1.0V
–1.0V – 1.2V
0 0 0
0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 12
Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Drain to source voltage VDS (V)

ID  VGS gm  VGS gm  ID
16 12 12
VDS=10V VDS=10V VDS=10V
14 Ta=25˚C Ta=25˚C
Mutual conductance gm (mS)

Mutual conductance gm (mS)

10 10

12
Drain current ID (mA)

8 8
10

IDSS=7.5mA
8 6 6
Ta=–25˚C
25˚C
6
4 4

4
75˚C 2 2
2

0 0 0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2 –2.0 –1.6 –1.2 – 0.8 – 0.4 0 0 2 4 6 8 10
Gate to source voltage VGS (V) Gate to source voltage VGS (V) Drain current ID (mA)

Ciss  VDS Coss  VDS Crss  VDS

16 8 8
Output capacitance (Common source) Coss (pF)

Reverse transfer capacitance (Common source) Crss (pF)

Input capacitance (Common source) Ciss (pF)

VGS=0 VGS=0 VGS=0

Ta=25˚C Ta=25˚C Ta=25˚C
14 7 7

12 6 6

10 5 5

8 4 4

6 3 3

4 2 2

2 1 1

0 0 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12 0 2 4 6 8 10 12
Drain to source voltage VDS (V) Drain to source voltage VDS (V) Drain to source voltage VDS (V)