DSEP2x61-03A

HiPerFRED VRRM = 300 V

I FAV = 2x 60 A
t rr = 30 ns

High Performance Fast Recovery Diode

Low Loss and Soft Recovery
Parallel legs
Part number

DSEP2x61-03A

Backside: isolated

2 1

3 4

Features / Advantages: Applications: Package: SOT-227B (minibloc)

● Planar passivated chips ● Antiparallel diode for high frequency ● Isolation Voltage: 3000 V~
● Very low leakage current switching devices ● Industry standard outline
● Very short recovery time ● Antisaturation diode ● RoHS compliant
● Improved thermal behaviour ● Snubber diode ● Epoxy meets UL 94V-0
● Very low Irm-values ● Free wheeling diode ● Base plate: Copper
● Very soft recovery behaviour ● Rectifiers in switch mode power internally DCB isolated
● Avalanche voltage rated for reliable operation supplies (SMPS) ● Advanced power cycling
● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS)
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b

© 2016 IXYS all rights reserved

 DSEP2x61-03A

Fast Diode Ratings

Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 300 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 V
IR reverse current, drain current VR = 300 V TVJ = 25°C 650 µA
VR = 300 V TVJ = 150°C 2.5 mA
VF forward voltage drop IF = 60 A TVJ = 25°C 1.51 V
I F = 120 A 1.82 V
IF = 60 A TVJ = 150 °C 1.11 V
I F = 120 A 1.45 V
I FAV average forward current TC = 80 °C T VJ = 150 °C 60 A
rectangular d = 0.5
VF0 threshold voltage TVJ = 150 °C 0.79 V
for power loss calculation only
rF slope resistance 5.3 mΩ
R thJC thermal resistance junction to case 0.85 K/W
R thCH thermal resistance case to heatsink 0.10 K/W
Ptot total power dissipation TC = 25°C 140 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C 600 A
CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 170 pF
I RM max. reverse recovery current TVJ = 25 °C 12 A
IF = 60 A; VR = 190 V TVJ = 100 °C 15 A
t rr reverse recovery time -di F /dt = 600 A/µs TVJ = 25 °C 40 ns
TVJ = 100 °C 60 ns

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b

© 2016 IXYS all rights reserved

 DSEP2x61-03A

Package SOT-227B (minibloc) Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 100 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 30 g
MD mounting torque 1.1 1.5 Nm
MT terminal torque 1.1 1.5 Nm
d Spp/App terminal to terminal 10.5 3.2 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 8.6 6.8 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V

Product Marking
Part No.
Logo XXXXX ®
Zyyww abcd
Assembly Line
DateCode Assembly Code

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard DSEP2x61-03A DSEP2x61-03A Tube 10 476250

Equivalent Circuits for Simulation * on die level T VJ = 150 °C

I V0 R0 Fast
Diode
V 0 max threshold voltage 0.79 V
R0 max slope resistance * 3.4 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b

© 2016 IXYS all rights reserved

 DSEP2x61-03A

Outlines SOT-227B (minibloc)

2 1

3 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b

© 2016 IXYS all rights reserved

 DSEP2x61-03A

Fast Diode
160 800 25
TVJ = 100°C TVJ = 100°C
VR = 150 V VR = 150 V
20
120 600
IF = 120 A
TVJ = 150°C IF = 120 A 60 A
15 30 A
IF 100°C Qr 60 A
80 25°C 400 30 A IRM

[A] [nC] 10
[A]
40 200
5

0 0 0
0.0 0.5 1.0 1.5 2.0 100 1000 0 200 400 600 800 1000
VF [V] -diF /dt [A/μs] -diF /dt [A/μs]
Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current
IF versus VF Qr versus -diF /dt IRM versus -diF /dt

1.4 90 14 0.85
TVJ = 100°C TVJ = 100°C
VR = 150 V IF = 60 A
1.2 12 0.80
80

1.0 trr VFR 10 0.75

IF = 120A
Kf 70 IF = 60A
tfr
0.8 [ns] IF = 30A [V] 8 0.70
IRM [μs]

Qr 60
0.6 6 0.65
VFR tfr

0.4 50 4 0.60
0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000
TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]
Fig. 4 Typ. dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage
Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt

0.1

ZthJC
Constants for ZthJC calculation:
0.01
[K/W] i Rthi (K/W) ti (s)
1 0.307 0.0055
0.001
2 0.353 0.009
3 0.089 0.0007
4 0.101 0.04
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
t [s]
Fig. 7 Transient thermal resistance junction to case

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b

© 2016 IXYS all rights reserved

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