Arab Academy for Science & Technology & Maritime Transport

Collage of Engineering and Technology

Cairo Campus

Department of Electronics & Communication Engineering

EC339 Electronic II

Lab. Report

Exp. No.: 4
Title : MOSFET DC Analysis
Name : Adel Osama Nabhan

ID No. : 18108313.

Class : Sat 10:30

Grade:
Lab_4_MOSFET DC Analysis EC339 Electronic II

 Objective:
Measure and calculate Id, Ig, Is, to get gm and compare them
to orcad todetermine the range of the operation of mosfet

 Theory:

 Theory of Operation:
MOSFET stands for metal oxide semi conductor feild transistor,
it has 2 modes: deplation and enhacement
each is available as p-type, n-type

Ids = 0, cutoff Vgs< vt

Ids != 0, small value, Vgs > vt, Vds > vd

Ids(large value), saturation Vgs Vgs > vt

 Design Equations
Id = 0.5 UnCox W/L (Vgs-vt)^2

gm = root(2Id Uncox W/L)

 Circuit Diagram :

Figure 1

1
 Lab_4_MOSFET DC Analysis EC339 Electronic II

Equipment:

Battery, resistance, ammeter

MOSFET, Breadboard
Procedure:
Measurements and Results:
Measurement Steps:
1- Construct the circuit as shown in figure 1.
2- Measure the entire transistor Currents and Voltages.
3- Check the transistor mode of operation.
4- Calculate the transistor’s Transconductance.

 Attach your ORCAD simulation for the experiment

Conclusion and comments:

as noticed, there is a great difference between the measured voltage and the
simulated one in orcade due to losses, tolerances and other affecting factors