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Highly Accelerated Life Testing and Reliability Prediction of Solid

Tantalum Capacitors

Conference Paper · October 2019

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Alexander Teverovsky
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NASA Electronic Parts and Packaging (NEPP) Program

Alexander Teverovsky
Parts, Packaging, and Assembly Technologies
Office, Code 562, GSFC/ Dell Perot Systems
Alexander.A.Teverovsky@nasa.gov
  Introduction.
 Errors of determining FR at accelerated conditions.
 Errors of determining accelerating factors.
 Historical WGT data.
 Manufacturers’ data to predict reliability.
 Physics of failure approach.
 Experimental data.
 Derating.
 BI conditions at different temperatures and voltages.
 Conclusions.

MRQW 2010 2
 WGT is a combination of burn-in (screening) and reliability
verification (qualification) test.
 If β < 1 and λ can be monitored during testing, then the test can
be stopped when the necessary λ is achieved. =>
Any lot can be screened out to as high reliability as necessary?
β −1
  t β  βt 
F(t) WGT F (t ) = 1 − exp −    λ (t ) =  
  η   η η 
63% norm β norm = βWGT η norm = AF ×ηWGT
λWGT (tWGT ) = AF × λnorm ( AF × tWGT )
Original notion [Didinger’64]: “to pay for
only as much grading as needed,
t without the risk of getting too little or
η_WGT η_norm overpaying for too much reliability”.
MRQW 2010 3
 WGT condition per MIL-PRF-55365:
o 85 oC for 40 hours or more at V = 1.1 to 1.53VR.
o A failure is defined as a blown 1A or 2A fuse.
o FR is calculated using an empirical equation obtained ~ 40 years ego:
 V 
AF = 7.03412025 ×10 −9 × exp18.77249321 
 VR 
 Life test at 85 oC can confirm λ ~1%/1000hrs which is more
than 100 times greater than is required for T-grade parts =>
long-term reliability is determined by 40-hr accelerating test.
 Problems:
oDefinition of failures as blown fuses – why 1A or 2A?
oMethod of calculation of λ at accelerated conditions.
oAcceleration factors used.
V
Simplified equation for AF: AF = exp( B × u ) u=
VR
−1
B is the voltage acceleration constant (B = 18.77249321???)
MRQW 2010 4
  Failures that occur before 0.25 hr are defined as infant
mortality failures (??) and are not used for calculations.
 By definition, all WGT failures are IM defects.
 MC Simulation for a lot with β=0.1, FR=1e-7 1/hr, and u = 0.4:
WGT Simulation
100

90 MIL-spec calculations The lot has 23 samples failing

50 before 40 hrs; 17 failed before 0.25
hr, one between 0.25 hr and 2 hr,
cumulative probability, %

23 pcs, h=3E10hr, b=0.12

10

5
300 pcs, h=5E12hr, b=0.1 and 5 between 2 hr and 40 hr.
x5

5.E-1
1
6 pcs, h=1E4hr, b=0.7 Neglecting early failures skews
distributions significantly.
1.E-1
1.E-3 1.E-1 10 1000 100000 1.E+7 1.E+9
time, hr

MRQW 2010 5
 MIL-spec: all failures between 0.25 hr and 2 hr are assumed to
occur at t1 = 2 hr, and between 2 hr and 40 hr at t2 = 40 hr.
 Maximum likelihood estimation (MLE) for the interval data takes
into account the uncertainty of time to failure and provides a more
accurate assessment of the parameters of Weibull distributions.
WGT for 5 lots of MIL-PRF-55365 capacitors at V=1.52VR Results of Weibull Grading Test
99
1.E-06

FR based on MIL-spec, 1/hr

90

50

1.E-07
cumulative probability, %

10

5
1.E-08

5.E-1
1.E-09
1.E-09 1.E-08 1.E-07 1.E-06
1.E-1
1.E-1 1 10 100 FR based on MLE of all data, 1/hr
time, hr

Method of calculations per MIL-PRF-55365 might result in FR that

are less than the real values by several times.
MRQW 2010 6
For FR calculations based on 300 samples, F(tWGT) should be
>~1%. Assuming FR = 0.01%/1000 hr or FR = 0.001%/1000 hr,
F(tWGT) were calculated for test conditions at u = 0.3, 0.4, and 0.5
at different β.
Probability of failure during 40hr WGT
1.E+00
At FR = 0.001%/1000 hr and u=0.4
probability of failure

1.E-01
F(tWGT) is below 1% for all cases
1.E-02
when β >0.1. At u = 0.5 F(tWGT) is
below 1% even at relatively large β.
1.E-03

1.E-04
0 0.2 0.4 0.6 0.8 1
beta
u=0.3, l=1e-7 u=0.3, l=1e-8 u=0.4, l=1e-7
u=0.4, l=1e-8 u=0.5, l=1e-7 u=0.5, l=1e-8

Possible statistical variations in the number of failures during

WGT might result in significant variations of FR due to a
relatively small total number of failures.
MRQW 2010 7
  At small number of failures during WGT there is a possibility of
missing a lot susceptible to wear-out degradation (e.g. field-
induced crystallization). χ 2 (1 − c.l ,2n + 2) 1 1
λ= × ×
 If no failures observed: 2 AF N ×t
At u = 0.4, n = 0, c/l= 90%: χ2 = 4.6 and λ = 1E-7 1/hr
Weibull Simulation at FR=0.01%/1000hr, V=1.4VR
1.E-3

FR_ set =0.01%/1000 hr Variations of λ with time at different

β, but the same FR=0.01%/1000 hr
8.E-4

Wear-out failures
failure rate, 1/hr

6.E-4

β=3
β=0.5
4.E-4
Extension of the duration of WGT
β=0.1 λ_40∼1.8Ε−4 up to 160 hrs would give more
β=1
2.E-4 confidence that no wear-out
failures occur during the mission.
0
0 20 40 60 80 100
time, hr

MRQW 2010 8
  V 
AF = exp  B ×  − 1
  VR 
 Rated voltage is set by proprietary Mfr. methods
=> Uncertainty in VR.
 When and how acceleration constant has been established?
=> Uncertainty in B.
Effect of VR variations
1.E+06

1.E+05
0.9VRo Dashed line - “ideal” case when
VRo
1.E+04 1.1VRo
VR = VRo (corresponds to the
1.E+03 model at B = 18.772).
AF

1.E+02 Solid lines are calculated for

1.E+01
cases when VR deviate from
1.E+00

1.E-01
VRo by 10%.
0 0.1 0.2 0.3 0.4 0.5 0.6
u=V/VR-1

AF changes more than 100 times when VR deviates on 10%

MRQW 2010 9
 Experimental data from Navy Crane report, 1982, for various
hermetic solid tantalum capacitors and data reported by KEMET
in 1972 and 2006
MIL-C-39003 capacitors The data confirm an
1.E+05
MIL-spec, B=18.77 increase of AF errors with V
NC min, B=10.3
1.E+04 NC max, B=24.4 and wide range of variations
acceleration f actor

KEMET-1972, B=14.7

1.E+03
Paulsen'06, B=8
of B, from 8 to 24.4.
1.E+02
Note: Paulsen’s data for chip
capacitors were recalculated from
1.E+01 power [AF=(V/VR)n] to exponential
[AF=exp(Bu) ] dependence on
1.E+00
voltage.
1 1.1 1.2 1.3 1.4 1.5
V/VR

The range of variations of B is close to TDDB model predictions

MRQW 2010 10
AF calculated at 85 oC using Ea calculated based on vendors’
vendors’ and MIL-spec data and MIL-spec data
1000
MIL-PRF, B=18.77
Manufacturer Ea, eV
AVX, B=8.1
100
KEMET, B=14.7 AVX 0.63
NEC/TOKIN, B~7.2
acceleration factor

10 Hitach, B~6.8
Vishay*, B=18.3 KEMET 1.17
1 Panasonic, B=3.4
MIL-PRF-55365 2.1
0.1

0.01
HITACHI 0.62
0.001 NEC/TOKIN 0.66
0.0001 Vishay*/MIL-HDBK-217F 0.15
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V/VR
Panasonic 0.16
 The range of reliability AF corresponds to the existing
experimental data for AF at WGT.
 The values of Ea and B are within the range of results
predicted by TDDB model.
MRQW 2010 11
Thermochemical model of time dependent dielectric breakdown
 ∆H 
TF = to × exp − γE + 
 kT 
where ∆H is the activation energy required for displacement of ions, γ is the field
acceleration parameter, and to is a time constant.
Assuming VBR = n×VR:
 V 
TF (T1 )  E  1 1  Eeff = ∆H × 1 − 
ATFT = = exp − eff  −   nVR 
TF (T2 )  k  T2 T1 
Eeff depends on V
∆H
B=
= exp(− Bu )
TF (VR )
ATFV = nkT
TF (V )
B depends on T
MRQW 2010 12
 Variations of B with ∆H Voltage dependence of AF
for 2.5 < n < 3.5 at different B
Calculated values of B at T=85C Effect of B variations
30 1.E+06
10
MIL-PRF-55365 1.E+05 13
25 16
18.77
1.E+04 22
20 25
28

AF
1.E+03
B

15
1.E+02
n=2 n=2.5
10 n=3 n=3.5 1.E+01 MIL-PRF-55365
MIL-spec
5 1.E+00
1 1.2 1.4 1.6 1.8 2 0 0.1 0.2 0.3 0.4 0.5 0.6

activation energy, eV u=V/VR-1

Possible variations of AF increase with V up to 104 times

MRQW 2010 13
 Distributions of VBR at different ∆H × d
Model prediction: VBR =
temperatures for 4.7uF 50V
4.7uF 50V scintillation breakdown
γ × kT
99
Scintillation breakdown
90 150
165C
22C
130
50
cumulative probability, %

VBR_scint
110

145C 90
10 22uF 63V
125C 4.7uF 50V
5
70
22uF 50V
85C
50
0.002 0.0024 0.0028 0.0032 0.0036
1
40 100 200
breakdown voltage, V 1/T, 1/K

Assuming γ = 13.6 cm/MV and thickness of Ta2O5 layer proportional to

the rated voltage, d = α×VR, where α = 7 nm/V, the values of ∆H are in
the range from 1 eV to 2 eV.

MRQW 2010 14
 Results of HALT for 22 uF/50 V and 4.7 uF/50 V
capacitors at different voltages and temperatures
22uF 50V capacitors at different BI conditions 4.7uF 50V capacitors at different BI conditions
99 99

90 125C80V 90 75V125C
112.5V22C
87.5V85C
130C60V 100V22C
50 50
87.5V22C
cumulative probability, %

cumulative probability, %
75V22C

10
22C100V 10

22C87.5V
5 5

1 1
1.E-3 1.E-2 1.E-1 1 10 100 1000 1.E-2 1.E-1 1 10 100 1000
time, hr time, hr

 ∆H  V 
Model prediction for characteristic life : η = η o × exp  × 1 − 
 kT  nVR 
MRQW 2010 15
The characteristic life can be presented as a general log-linear relationship
η = exp(α 0 + α1 X 1 + α 2 X 2 )
Based on PoF approach, the following conversion was used:
∆H 1 ∆H V
α 0 = ln(η 0 ) α1 = X1 = α2 = −
k × n × VR
X2 =
k T T

PART F S β α0 α1 α2 t0, hr ∆H, eV n B_85C

4.7uF 50V 90 117 0.24 -15.06 12761.6 -68.61 2.9E-07 1.1 3.7 9.6

22uF 50V 40 41 0.40 -28.13 21026.1 -124.49 6.1E-13 1.8 3.4 17.4

22uF 63V 59 43 0.24 -28.45 25072.2 -145.03 4.4E-13 2.1 3.5 20.6

MRQW 2010 16
 Derating is a reduction by OEM of stress during operating
conditions to further increase reliability.
 Derating is determined by mission conditions, nominal failure rate,
and acceleration factors.
 Example: Preq(10y) <3E-5. For a part with FR=0.001%/1000hr P(10)~8.8E-4
(exceed Preq). For B=18.77 derating to 80% results in P(10)~2E-5. At B=10
derating to 30% would be necessary.
 Severe derating is necessary to compensate for uncertainty in AF
and in the FR at the rated conditions.
 This approach refutes the notion of WGT and the benefits of this
test for the user. A regular BI at V > VR would give the same
result.

MRQW 2010 17
 Condition for equivalent WGT at different T, V, and t:
AF (T1 , V1 ) × t1 = AF (T2 , V2 ) × t 2
Example. Find V that is equivalent to condition V1=1.3VR, T1=85 oC,
t1=40hr for two cases: 1) T2 = 145 oC and t2 = 40 hrs;
2) T2 = 105 oC and t2 = 160 hrs.
4.7uF 50V AF to 85C 1.3VR
1.E+03
22uF 50V AF to 85C 1.3VR
85C 95C
Answer:
1.E+03
85C
105C
95C
115C
1.E+02
105C
125C
145C
115C
135C
155C
1. V2=0.9VR for 4.7uF
1.E+02 125C 135C
145C 155C AF=1 AF=0.25
50V and 0.95VR for
AF(2)/AF(1)

AF=1 AF=0.25
AF(2)/AF(1)

1.E+01
1.E+01
22uF 50V capacitors.
1.E+00 1.E+00
2. V2 =1.02VR for 4.7uF
1.E-01 1.E-01 50 V and 1.1VR for
1.E-02 1.E-02 22 uF 50V capacitors.
-0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
u2 = V2/VR-1 u2 = V2/VR-1

MRQW 2010 18
 FR determined by WGT varies significantly depending on the method
of calculation and AF used. Reliance on MIL-PRF-55365 method for
reliability rating might be misleading.
 Errors related to the method of calculation sum up to an order of
magnitude. Errors related to AF are up to 103.
 TDDB model predicts an exponential dependence of AF on voltage with
the voltage acceleration constant B depending on T. Temperature
dependence of AF can be presented in the Arrhenius-like form with
Eeff depending on V.
 A method for calculation of AF(T, V) based on approximation of HALT
test results with a general log-linear relationship at two stress factors
has been demonstrated.
 Derating should be a prerogative of the user to further increase
reliability. Manufacturers should confirm FR at rated conditions and
determine adequate AFs for derating.
MRQW 2010 19
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