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MITSUBISHI IGBT MODULES

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CM300DY-28H

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HIGH POWER SWITCHING USE

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INSULATED TYPE

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A
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B
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P - DIA.

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M

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(4 TYP.)
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C2E1 E2 C1
R

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C F L D
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G G H Description:

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S - M6 THD.
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p- Mitsubishi IGBT Modules are de-

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(3 TYP)

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ft

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p-
N K N TAB #110, t = 0.5 signed for use in switching applica-
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tions. Each module consists of two
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Q
up

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K K
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p-

IGBTs in a half-bridge configuration

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with each transistor having a re-

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E
verse-connected super-fast recov-
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J
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ery free-wheel diode. All compo-

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N
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nents and interconnects are iso-

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lated from the heat sinking base-

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plate, offering simplified system as-
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sembly and thermal management.

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Features:

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u Low Drive Power
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u Low VCE(sat)
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u Discrete Super-Fast Recovery

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ft

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C2E1
Free-Wheel Diode
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E2 C1
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u High Frequency Operation

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u Isolated Baseplate for Easy

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Heat Sinking
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Applications:
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u AC Motor Control
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u Motion/Servo Control
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Outline Drawing and Circuit Diagram

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u UPS

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Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies

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A 4.33 110.0 K 0.71 18.0
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Ordering Information:
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Example: Select the complete part

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B
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3.6610.01 93.00.25 L 0.59 15.0

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p-
t.c

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module number you desire from

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C 3.15 80.0 M 0.55 14.0

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the table below -i.e. CM300DY-28H

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p-

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D 2.4410.01 62.00.25 N 0.28 7.0

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is a 1400V (VCES), 300 Ampere

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p-

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E 1.18 Max. 30.0 Max. P 0.26 Dia. Dia. 6.5 Dual IGBT Module.
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F 1.18 30.0 Q 0.33 8.5

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Type Current Rating

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VCES
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G 0.98 25.0 R 0.24 6.0

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Amperes
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Volts (x 50)
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H 0.85 21.5 S M6 Metric M6

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CM 300 28
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J 0.83 21.2
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Sep.2000
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 .

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MITSUBISHI IGBT MODULES

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CM300DY-28H

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HIGH POWER SWITCHING USE

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INSULATED TYPE

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Absolute Maximum Ratings, Tj = 25 C unless otherwise specified

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Symbol Ratings Units

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Junction Temperature –40 to 150

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Tj C

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Storage Temperature Tstg –40 to 125 C

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1400
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Collector-Emitter Voltage (G-E SHORT) VCES Volts

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Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts

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Collector Current (TC= 25C) 300 Amperes

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IC
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Peak Collector Current 600* Amperes
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ICM

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Emitter Current** (TC= 25C) IE 300 Amperes

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Peak Emitter Current** IEM 600* Amperes
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2100
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Maximum Collector Dissipation (T C= 25C, T j ≤ 150C) Pc Watts

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1.96 ~ 2.94

t.c
Mounting Torque, M6 Main Terminal N·m

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–

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1.96 ~ 2.94

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Mounting Torque, M6 Mounting N·m
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–
ft

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Weight 500 Grams

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–
up

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Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms

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*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
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**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

p-
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Static Electrical Characteristics, Tj = 25 C unless otherwise specified

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Characteristics Symbol Test Conditions Min. Typ. Max. Units

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Collector-Cutoff Current 1.0 mA

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ICES VCE = VCES, VGE = 0V – –
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0.5 A
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Gate Leakage Current IGES VGE = VGES, VCE = 0V – –

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Gate-Emitter Threshold Voltage VGE(th) IC= 30mA, VCE = 10V 5.0 6.5 8.0 Volts

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Collector-Emitter Saturation Voltage 3.1 4.2** Volts

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VCE(sat) IC = 300A, VGE = 15V –
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IC = 300A, VGE = 15V, Tj = 150C –

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2.95 Volts

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–
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ft

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Total Gate Charge QG VCC = 800V, IC = 300A, VGE = 15V – 1530 – nC
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p-
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3.8
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IE = 300A, VGE = 0V –
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Emitter-Collector Voltage VEC – Volts

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** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
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Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified

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Characteristics Symbol Test Conditions Min. Typ. Max.

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Units
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Input Capacitance Cies – – 60 nF

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21

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VGE = 0V, VCE = 10V – –

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Output Capacitance Coes nF

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p-
12 nF
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Reverse Transfer Capacitance Cres – –

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Turn-on Delay Time td(on) – – 250 ns

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Resistive
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Load Rise Time tr VCC = 800V, IC = 300A, 500 ns

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– –
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p-
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Switching Turn-off Delay Time VGE1 = VGE2 = 15V, RG = 1.0Ω 350

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td(off) – – ns
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Times Fall Time

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500
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tf – – ns
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p-

Diode Reverse Recovery Time trr IE = 300A, di E /dt = –600A/s – – 300 ns

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p-
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t.c

Diode Reverse Recovery Charge Qrr IE = 300A, di E /dt = –600A/s – 3.0 C

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–
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t.c

Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified

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Max.
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Characteristics Symbol Test Conditions Min. Typ.

p-

Units
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Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.06

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C/W
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Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.12 C/W

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p-
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Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.035 C/W
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p-

Sep.2000
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p-

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MITSUBISHI IGBT MODULES

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CM300DY-28H

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HIGH POWER SWITCHING USE

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INSULATED TYPE

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COLLECTOR-EMITTER
lif

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TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
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OUTPUT CHARACTERISTICS

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p-

n
(TYPICAL)

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(TYPICAL) (TYPICAL)

lif

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w
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p-
600 600 5

n
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lif
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Tj = 25 C 15 14 13 VCE = 10V

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V 15V

p-

t
GE =

lif
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Tj = 25C
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500 VGE = 20 500

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t

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p-
4
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(V)

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Tj = 125  C

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p-

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12

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400 400

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p-

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3

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p-
300 11 300
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p-

200 200

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10

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1
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9
100

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100
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ft

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p-
8 Tj = 25C
t.c

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Tj = 125C

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up

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t.c
0

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0 4 8 12 16
p-

0 2 4 6 8 10 20

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0 120 240 360 480 600

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lif

t.c
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n

GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC , (AMPERES)

p-
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

lif
t.c

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COLLECTOR-EMITTER
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FREE-WHEEL DIODE

p-
lif

SATURATION VOLTAGE CHARACTERISTICS

t.c

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FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
w

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p-

(TYPICAL)

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(TYPICAL)
w

(TYPICAL)
lif

t.c

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w
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10 103 102
p-

n
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lif
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t.c
w
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T = 25 C
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p-
j j = 25C
T
Cies

lif
t.c

IC = 6 00A
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8
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p-
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p-

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101
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C = 300A
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I
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Coes

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p-
102
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4
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100 Cres
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2
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IC = 120A
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VGE = 0V
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0 101 10-1
t.c

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0 4 8 12 16 20 10-1 100 102

p-

1.0 1.5 2.0 2.5 3.0 3.5 4.0 101

n
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lif
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t.c
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GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

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EMITTER-COLLECTOR VOLTAGE, VEC , (VOLTS)

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p-

lif
t.c

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n
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p-
HALF-BRIDGE
lif

t.c

SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS

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p-

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(TYPICAL) (TYPICAL) GATE CHARGE, VGE

lif

t.c

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104 103 102

p-

20
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lif
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VCC = 800V
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t.
n
w

p-

I = 3 00A
VGE = 15V C

lif
t.c

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w

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RG = 1.0Ω
n
w

p-
16
lif

t.c

Tj = 125C Irr VCC = 600V

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p-

n
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lif

103
t.c

w
0V
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td(off) CC = 80
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V
t rr
n

p-

tf 12
lif
t.c

w
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n
w

p-

102 101
t.c

w
w

td(on)
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n
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8
t.c

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w
p-

102 tr
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lif

t.c
w
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n

p-

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4
t.c

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di/dt = -600A/sec
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w

p-
lif

t.c

Tj = 25C
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p-

n
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100
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101 101
t.c

0
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w
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p-

101 102 103 101 102 103 1200 1600 2000 2400
n

0 400 800
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lif
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t.c
w
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COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES)

n

GATE CHARGE, QG, (nC)

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p-

lif
t.c

w
w

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n
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p-
lif

t.c

w
w

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p-

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lif

t.c

w
w
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p-

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lif
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p-
t.c

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p-

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p-

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p-

Sep.2000
t.c

w
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t.c

w
w
p-

w
lif

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p-
t.c

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t.c w up
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p- w
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t.c w lif
t.c w n .u p- w t .c
n .u p- w
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10-3
100
101
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10-2
10-1
t.c
p- w
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10-3
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t.c w
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10-2

TC = 25C
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Single Pulse
p- lif w
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lif w n .u p- w ft
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10-5
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(IGBT)
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TIME, (s)
w lif n
w n .u p- w t.c w
.u p- w
lif w n .u
w
TRANSIENT THERMAL
t.c
lif w n

100
.u p- w

10-4
p- w t.c w

Per Unit Base = Rth(j-c) = 0.06C/W

w
IMPEDANCE CHARACTERISTICS
lif w lif
t.c w n .u p- w t.c w
n .u p- w
lif w n .u
w
t.c w 101 p

10-3
p- lif n .u
w t.c w -li

10-3
10-2
10-1
p- w
lif w n .u p- w f
lif w
t.c w lif w
t.c
t.c w n .u p- w t .c w
lif w n

10-3
10-2
10-1
100
101

n .u p- w w .u
lif w
t.c
n p
10-3

p- w t.c w .u -li
w
lif w n .u p- w ft
w
t.c w lif w .c
n
w n .u p- w t.c w
10-2

TC = 25C

lif w n
Single Pulse

.u p- w w .u
p- lif w
t.c
n .u p w
w t.c w -li
w
lif w n .u p- w ft

10-5
10-1
(FWDi)

w w w

TIME, (s)
t.c lif w .c
w n .u p- w w n .
w lif w
t.c
n .u
TRANSIENT THERMAL

.u p- w t.c w
100

w
10-4
lif n p-
p- w .u w
Per Unit Base = Rth(j-c) = 0.12C/W
IMPEDANCE CHARACTERISTICS

lif w
t.c w lif w
t.c w n .u p- w t.c w
n .u p- w
lif w n .u
w
101

10-3

p- lif w
t.c
n .u p
w
10-3
10-2
10-1

lif w
t.c w -li
f
w t.c w n .u p- w t.c
ift w n .u p- w
lif
t w n
.c w lif w .c w
n .u p- w w n .u
p- lif w
t.c
n .u p
w t.c w -li
w
lif w n .u p- w ft
w
t.c w lif w .c
n
w n .u p- w t.c w
.u p- w
lif w n .u
lif w
t.c w
p- w t.c w n .u p- w
lif w n .u p- w
lif w
t.c w lif w
t.c w
n .u p- w w n .u
p- li ft w
t.c
n .u p
w .c w
w
lif w n .u p- w
w
t.c w lif w
w n .u p- w t.c w
.u p- w
lif w n .u
lif w
t.c w p
n .u
INSULATED TYPE

p-

Sep.2000
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES

w
CM300DY-28H

lif w
t.c w -li
f
t.c w n .u p- w t.c
n .u p- w
lif
t w n
lif w .c w
p- w w n .u
lif w
t.c
n .u p
w t. w -l