Ordering number : ENN7179A

2SJ615
P-Channel Silicon MOSFET

2SJ615

Ultrahigh-Speed Switching Applications

Preliminary
Features Package Dimensions
• Low ON-resistance. unit : mm
• Ultrahigh-speed switching. 2062A
• 4V drive. [2SJ615]
4.5
1.6 1.5

4.25max
2.5
0.4

1.0
0.5
3 2 1 0.4
1.5
3.0
(Bottom view) 1 : Gate
0.75 2 : Drain
3 : Source

Specifications SANYO : PCP

Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --2.5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --10 A
Mounted on a ceramic board (250mm2✕0.8mm) 1.0 W
Allowable Power Dissipation PD
Tc=25°C 3.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance yfs VDS=--10V, ID=--1.3A 1.1 1.6 S
RDS(on)1 ID=--1.3A, VGS=--10V 210 270 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.7A, VGS=--4V 330 460 mΩ
Marking : JV Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1502 TS IM TA-3846 / 41002 TS IM TA-3523 No.7179-1/4
 2SJ615

Continued from preceding page.

Ratings
Parameter Symbol Conditions Unit
min typ max
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns
Rise Time tr See specified Test Circuit. 22 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns
Fall Time tf See specified Test Circuit. 7.5 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2.5A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--01V, ID=--2.5A 0.7 nC
Diode Forward Voltage VSD IS=--2.5A, VGS=0 --0.97 --1.5 V

Switching Time Test Circuit

VIN VDD= --15V
0V
--10V
ID= --1.3A
VIN RL=11.5Ω
D VOUT
PW=10µs
D.C.≤1%
G

2SJ615
P.G 50Ω S

ID -- VDS ID -- VGS
--2.0 --2.0
VDS= --10V
--5 V
V

--1.8 --1.8
--6
--8

V
--4
--1.6 --1.6
Drain Current, ID -- A

Drain Current, ID -- A
V

--1.4 --1.4
0
--1

--1.2 --1.2

--1.0 VGS= --3V --1.0

--0.8 --0.8

--0.6 --0.6
C

25°C
75°

--0.4 --0.4
Tc=

°C
--25

--0.2 --0.2

0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS -- V IT02665 Gate-to-Source Voltage, VGS -- V IT04263
RDS(on) -- VGS RDS(on) -- Tc
800 600
Tc=25°C
On-State Resistance, RDS(on) -- mΩ
On-State Resistance, RDS(on) -- mΩ

700
500

600
--4 V
400
, VG S=
500
-- 0.7A
I D=
Static Drain-to-Source
Static Drain-to-Source

ID= --0.7A --1.3A

400 300 V
= --10
1.3A , V GS
300 I D= --
200

200

100
100

0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT04264 Case Temperature, Tc -- °C IT04265

No.7179-2/4
 2SJ615
yfs -- ID IF -- VSD
3 --10
VDS= --10V 7 VGS=0
Forward Transfer Admittance, yfs -- S

5
2
3
2

Forward Current, IF -- A
1.0 --1.0
7
7 5
5°
C
5 --2 3
=
Tc °C 5°
C 2
75 2
3 --0.1
7
5

°C
2

25°C
--25°C
Tc=75
3
2

0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Drain Current, ID -- A IT04266 Diode Forward Voltage, VSD -- V IT04267
SW Time -- ID Ciss, Coss, Crss -- VDS
100 1000
VDD= --15V f=1MHz
7 7
VGS= --10V
5 5
Switching Time, SW Time -- ns

3 td(off) 3

Ciss, Coss, Crss -- pF

2 2 Ciss

10
tf 100
td(on)
7 7
5 5
tr
3 3 Coss
2 2 Crss

1.0 10
3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --5 --10 --15 --20 --25 --30
Drain Current, ID -- A IT04268 Drain-to-Source Voltage, VDS -- V IT02671
VGS -- Qg ASO
--10 2
VDS= --10V IDP= --10A <10µs
ID= --2.5A --10
7 10
Gate-to-Source Voltage, VGS -- V

5 0µ
--8 1m s
3 ID= --2.5A s
10
Drain Current, ID -- A

2 ms
10
--6 --1.0 DC 0m
7 op s
5 era
Operation in this area tio
3 n
is limited by RDS(on).
--4 2

--0.1
7
--2 5
3 Ta=25°C
2 Single pulse
0 --0.01
Mounted on a ceramic board(250mm2✕0.8mm)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Total Gate Charge, Qg -- nC IT04269 Drain-to-Source Voltage, VDS -- V IT04270
PD -- Ta PD -- Tc
1.2 4.0
Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W

3.5
1.0
M
ou 3.0
nt
ed
0.8 on
ac 2.5
er
am
0.6 ic 2.0
bo
ar
d(
25 1.5
0.4 0m
m2
✕ 1.0
0.8
m
0.2 m
) 0.5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT04271 Case Temperature, Tc -- °C IT04272

No.7179-3/4
 2SJ615

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2002. Specifications and information herein are subject
to change without notice.

PS No.7179-4/4
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