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Journal of Electromagnetic Waves and Applications

ISSN: (Print) (Online) Journal homepage: https://www.tandfonline.com/loi/tewa20

Design of high-power dual-frequency rectifier

circuit

Xu Han, Xiaomin Luo, Yanxiao Huang, Zhaojun Zhu, Qiaoli Zhang, Zihao
Feng, Sipei Li & Shuai Ding

To cite this article: Xu Han, Xiaomin Luo, Yanxiao Huang, Zhaojun Zhu, Qiaoli Zhang, Zihao
Feng, Sipei Li & Shuai Ding (2022): Design of high-power dual-frequency rectifier circuit, Journal of
Electromagnetic Waves and Applications, DOI: 10.1080/09205071.2022.2037108

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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS

https://doi.org/10.1080/09205071.2022.2037108

RESEARCH ARTICLE

Design of high-power dual-frequency rectifier circuit

Xu Han , Xiaomin Luo, Yanxiao Huang, Zhaojun Zhu, Qiaoli Zhang, Zihao Feng,
Sipei Li and Shuai Ding
Institute of applied physics, University of Electronic Science and Technology of China, Chengdu, People’s
Republic of China

ABSTRACT ARTICLE HISTORY

The microwave wireless power transmission system avoids the prob- Received 13 May 2021
lems of large consumables, complex construction, and high main- Accepted 28 January 2022
tenance costs caused by the cable. It can be seen that this method KEYWORDS
has specific demands and is worthy of deep research. This paper Broadband power amplifiers;
designs a high-power dual-frequency rectifier circuit that works at wireless energy transmission;
1.15 and 1.7 GHz for wireless energy transmission. Using GaN HEMT rectifier circuit; GaN HEMT
as the rectifier, the output DC power reaches 6.5W, far beyond the device
conventional diode rectifier circuit in terms of power capacity.

1. Introduction
Traditional power transmission systems use cables as carriers, which have low noise inter-
ference and high transmission efficiency, without considering the influence of electromag-
netic energy radiation. However, to a complex system, long-distance power transmission is
much costlier, and the maintenance of the transmission system is still a major problem. The
microwave wireless power transmission system has solved these problems[1]. As a trans-
mission channel, it transmits the power in the microwave through a specific device to the
designated receiving terminal and guarantees a certain transmission efficiency. It has the
advantages of being small and flexible and can work in a complex transmission environ-
ment. For example, in the power supply of medical equipment inside the human body, the
wireless charging device can be used to place the energy receiving end in the human body
in advance, and the transmitter can directly supply power, eliminating the complicated
steps of taking out the internal equipment and charging. As the popularity of electronic
equipment increases, so does the equipment’s power demand. Microwave wireless power
transmission system has the advantages mentioned above, and the fields of application are
increasingly extensive. [2]. In the microwave wireless power transmission system, the con-
version between RF signal and DC signal is mainly achieved by the power amplifier and
rectifier circuit.
The basic rectifier circuit uses the positive conducting state and reverses cutoff char-
acteristics of the diode to build various types of topological structures. Schottky diodes
are widely used in low-power rectifier circuits. If the input power needs to be milliwatt

CONTACT Shuai Ding uestcding@uestc.edu.cn Institute of applied physics, University of Electronic Science
and Technology of China, Chengdu 611731, People’s Republic of China
© 2022 Informa UK Limited, trading as Taylor & Francis Group
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2 X. HAN ET AL.

Table 1. Comparison of current research results of relevant literature.

Ref. Device F/GHz DCout H (%)
[8] HSMS2850 1 4.6186 mW 73.2%
[9] GaN HEMT 2.75 6W 60%
[10] HSMS2862 3.5/5.8 18.0354 mW/13.2879 mW 71.8%/52.9%
[11] GaNMMIC 10.1 3.18W 63.9
[12] HSMS 286 2.45/5.8 8.2 mW/7.8 mW 64.8/62.2
[13] GaN HEMT 2.8 7.08W 70.8
[14] GaN Diode 2.45 0.73W 79
This paper GaN HEMT 1.15/1.7 5W/6.5W 50/65

level, the design of a diode-based rectifier circuit is more complicated. In 2014, Zhang pro-
posed a broadband high-efficiency radio frequency rectifier with shunt Schottky diodes,
which achieved a maximum rectification efficiency of 81% when the input power is 25 mW.
The operating frequency band is 0.78–1.43 GHz [3]. In 2015, Ignacio designed an alternat-
ing current (AC) to direct current (DC) converter at microwave frequency. The improved
GaN HEMT nonlinear model was used to verify the harmonic balance simulation, which
provides a new design idea for high-efficiency self-synchronous power rectification[4]. In
2018, a research team used GaN HEMT to design a Class E rectifier [5]. A DC power out-
put of 7.13W is achieved at an operating frequency of 2.8 GHz, the rectification efficiency
is 70.9%, and the power capacity has been greatly improved. In 2019, a dual-frequency
rectifier circuit that works at 2.45 GHz and 5.8 GHz was reported. The input power is
11 dBm, and the rectification efficiency of the two frequency points is 64.8% and 62.2%,
respectively[6]. There is a certain broadening of the operating frequency, but this rectifier
circuit is still limited to the milliwatt power range.
In the research of existing rectifier circuits, various research teams have achieved excel-
lent results in improving rectification efficiency through the analysis and design of circuit
topology and devices. However, there is little research on high-power rectifier circuits
with dual-frequency points. As shown in Table 1, among the existing rectification research
results, literature [7] designed a dual-frequency rectification structure, but the DC out-
put power did not exceed 10 mW. Other related documents only study the rectification
efficiency of a single frequency point but don’t care about the output power.

2. Principle and design

In the microwave wireless power transmission system, the rectifier circuit mainly plays the
role of the final microwave-DC energy conversion at the receiving end. The microwave
is received by the antenna and reaches the diode through the matching circuit, as shown
in Figure 1. where the circuit rectifies a DC output with the high-frequency component
partially removed.

2.1. Device selection

Generally, there are three types of rectifier circuits: series half-wave rectification, parallel
half-wave rectification, and voltage multiplier rectifier circuit. These types are composed
of diodes, capacitors, input matching circuits, and harmonic suppression circuits. For
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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 3

Figure 1. System diagram

Figure 2. voltage multiplier rectifier circuit topology

half-wave rectifier circuits, according to the I-V characteristics of the diode, half-wave rec-
tification turns the positive half-cycle of the input signal on and the negative half-cycle off,
causing it to have a loss of half of the signal.
In comparison, the voltage multiplier rectifier circuit has higher efficiency, shown in
Figure 2. When the input signal is a positive voltage, the diode D1 keeps forward biased
condition, and D2 is off. At this point, capacitor C1, D1, and the signal source will form a
current loop. When the input signal is negative, D1 is reversely cut off, and D2 is turned on.
The electric quantity stored in the positive half cycle of the capacitor C1 and the negative
half cycle of the signal is superimposed in series on the loads R1 and C2. Therefore, rectifi-
cation structures such as triple voltage and quadruple voltage can be introduced. Compared
with half-wave rectification, the voltage multiplier rectifier has a higher signal utilization
rate and better rectification efficiency, but it uses more devices and its structure is more
complex.
In applications, the rectifier circuit structure is selected according to design require-
ments. With their excellent performance, GaN HEMTs are widely used in the field of
switches and amplifiers. Its equivalent model has a V-A characteristic curve similar to that
of a diode when operating in switching mode, which means that the GaN HEMTs has the
inherent advantage of high-power capacity.
The choice of the substrate material has a greater impact on the performance of the
device. Generally, factors such as the degree of matching between the thermal expansion
coefficient of the material are comprehensively considered. Silicon carbide (Sic) or sapphire
is commonly used as the substrate material for more mature processes. sic and GaN are the
most widely used today because of their good match and low thermal conductivity. And
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4 X. HAN ET AL.

Figure 3. the I-V characteristics of the diode selected in this article.

Sic and GaN have a good matching degree and low thermal conductivity, which is the most
widely used in current applications.
In 2009, a new nonlinear HEMT model suitable for AlGaN/GaN switch applications
based on the above model [15]. This formula requires fewer parameters, has high conver-
gence, and can be used to model different types of devices. In the case of using the same
topology, using this formula can effectively shorten the modeling time. Figure 3 shows the
I-V characteristics of the diode selected in this article.
From the above research, it can be seen that under a specific gate voltage, the
drain–source of GaN HEMT has a reverse-conducting forward-cut IV characteristic, and
the breakdown voltage range is large, which can become the best core device for high-
power rectifier circuits. In this chapter, the CGH40010F GaN HEMT of CREE is selected
as the rectifier device. By designing a dual-frequency matching circuit and a harmonic sup-
pression circuit, a dual-frequency high-power rectifier circuit with rectification efficiency
of 50% and 65% is realized. The schematic diagram of the rectifier circuit is shown in Figure
4.

2.2. Dual frequency matching

The basic matching theory is the matching of a single frequency point. A series of works
have been done to broaden the frequency band of rectifier circuits, but there is little
research on dual-frequency matching on high-power rectifier circuits.
The dual-frequency matching theory uses Source-pull and Load-pull iteratively
to determine the best efficiency impedance at the two frequencies of the transistor
Zf 1 = Rf 1 + jXf 1 and Zf 2 = Rf 2 + jXf 2. The dual-frequency matching microstrip circuit
and its equivalent network are shown in Figure 5. After the impedance TL1 and TL2 are
summed, a conjugate impedance pair Zin1 is formed, which is matched with a 50-ohm
signal source through a π-type matching structure.
Zin1 represents the input impedance seen from the right end of TL1 (Z1, θ 1) to the load
terminal. The impedance expressions for the two operating frequency points are shown in
formulas (1) and (2)
Rf1 + jXf1 + jZ1 tan βf1 l1
Zin1 (f1 ) = Z1 (1)
Z1 + j(Rf 1 + jXf1 ) tan βf1 l1
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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 5

Figure 4. Schematic diagram of GaN HEMT rectifier circuit

Figure 5. (a)Dual-frequency matching microstrip circuit(b) π-type matching structure equivalent net-
work

Rf2 + jXf2 + jZ1 tan βf2 l1

Zin1 (f2 ) = Z1 (2)
Z1 + j(Rf2 + jXf2 ) tan βf2 l1

Zin1 (f1 ) and Zin1 (f2 ) are the input impedance of TL1 at the two frequencies of f1 and f2 ,
β f 2 , β f 1 are the propagation constants of the two frequency points, and l1 is the physical
length of TL1 . By separating the real and imaginary parts of Zin1 (f1 ) = ∗Zin1 (f2 ), formulas
(3) and (4) can be obtained.

Xf 1 + Xf 2
Z1 = Rf 1 Rf 2 + Xf 1 Xf 2 + (Rf 1 Xf 2 − Rf 2 Xf 1 ) (3)
Rf 1 Rf 2
Z (R −R )
nπ + arctan Rf 11Xf 2f −R
1 f2
f 2 Xf 1
θ1 = (4)
βf 2 + βf 1
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6 X. HAN ET AL.

After forming the conjugate impedance, set the expression Zin1 on the admittance circle
as shown in formula (5).

Yin1 (f1 ) = Gin1 − jBin1
(5)
Yin1 (f2 ) = Gin1 + jBin1

Since the electrical length of the microstrip line is proportional to the frequency, the rela-
tionship between the electrical lengths θ b1 and θ b2 of the TL2 branch at the two frequency
points can be expressed by formula (6).

θb1 = kθb2 = (f2 /f1 )θb2 (6)

The input admittance corresponding to the two frequency points at the open branch
TL2 (Zb , θ b ) is shown in formula (7)

Yin2  (f1 ) = jZb cot
1
θb
(7)
Yin2  (f2 ) = jZb cot
1
kθb

After the microstrip line TL2 (Zb , θ b ) is connected in parallel and the short stub is opened,
the input impedance becomes the Zin2 (f1 ) = ∗Zin2 (f2 ) real part and the imaginary part
is separated, and the characteristic impedance Zb and electrical length θ b of TL2 can be
calculated. Correspondingly, it can be known from the transmission line theory that in
parallel branches, the input admittance values are directly added. The input admittance
corresponding to Zin2 can be represented by formula (8).
 1
Yin2 (f1 ) = Gin1 − jBin1 + jZb cot θb
1 (8)
Yin2 (f2 ) = Gin1 + jBin1 + jZb cot kθb

All impedance matching processes can be represented on the Smith chart, as shown in
Figure 6. The input admittance after adding TL1 can be expressed as Yin1 (f1 ) and Yin1 (f2 ),
and then the input admittance after adding TL2 is expressed as Yin2 (f1 ) and Yin2 (f2 ). Finally,
the π-type matching structure is added to complete the matching to the center origin.
Zin3 is the input impedance seen from the node to the source, and the expression is
shown in formula (9).
Z0 + jZπ tan θπ
Zin3 = Zπ × (9)
Zπ + jZ0 tan θπ
In the formula, Z0 represents the impedance of the signal source, and Zπ repre-
sents the characteristic impedance of TLπ . From Zin3 = ∗Zin2 , we can obtain the
impedance and electrical length of the TLπ microstrip line at two frequency points (Zπ ,
θ π ) and (Zπ , π-θ π ), to achieve dual-frequency matching.
The specific parameters of each branch of the π-type network can be calculated by the
transmission matrix. Given known (Zπ , θ π ) conditions, the transmission matrix of the
π-type equivalent network can be obtained as shown in formula (10).
⎡ ⎤
cos θπ jZπ sin θπ
Aπ = ⎣ j sin θπ ⎦ (10)
cos θπ
Zπ
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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 7

Figure 6. Dual-frequency matching admittance change track in Smith chart

Figure 7. π network

The above requirements cannot be achieved through a section of the microstrip line, so
the π -type network shown in Figure 7 is used to achieve the requirement of equivalent
impedance at two frequency points as (Zπ , θ π ) and (Zπ , π -θ π ).
The transmission matrix of the π-type network is shown in formula (11).
⎡ ⎤⎡ ⎤⎡ ⎤
1 0 cos θ4 jZ4 sin θ4 1 0
A=⎣ 1 ⎦ ⎣ j sin θ4 ⎦⎣ 1 ⎦ (11)
1 cos θ4 1
jZ3 cot θ3 Z4 jZ5 cot θ5

If the equivalent transmission matrix and the transmission matrix of the π-type
network are equal Aπ = A, the impedance and electrical length of each branch of the
π-type network can be obtained. So far, the entire dual-frequency matching network has
been designed.
The harmonic suppression circuit is implemented by parallel microstrip lines, and its
structure is shown in Figure 8. The λ1 and λ2 are the wavelengths corresponding to f1
and f2 , respectively. The electrical length of L10 is λ1 /12. Since f2 is 3/2 times that of f1 ,
l10 = λ2 /8, which is used to suppress the second harmonic of f1 and the third harmonic
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8 X. HAN ET AL.

Figure 8. Harmonic suppression circuit

of f2 . L7 = λ2 /12 and L8 = λ1 /8 are used to suppress the third harmonic of f1 and the sec-
ond harmonic of f2 . Each harmonic is reflected the transistor by the harmonic suppression
circuit to continue to participate in the rectification to improve the rectification efficiency.

3. Simulation and experiment

According to the above formula, the final circuit specific parameters can be obtained after
optimization, as shown in Figure 9.
Since the schematic simulation can only detect the current and voltage at the specified
point, the rectification efficiency change curve in the frequency band can be obtained from
the formula (12).

η = 100 × real( V− dc [0] × I− dc. i[0])/P− in (12)

As shown in Figure 10, in the L-band, 1.15 and 1.7 GHz rectification effects reach 65% and
76%, respectively. Prove the feasibility of applying a dual-frequency matching structure to
the rectifier circuit.
After the RF signal passes through the rectifier device, the drain output is the superpo-
sition of the DC voltage and the AC voltage, and the output signal waveform is shown in
Figure 11(a). The DC voltage output waveform is shown in Figure 11(b).
The simulation data is shown in Figure 12. As the input power increases, the rectifi-
cation efficiency of the two frequency points of the rectifier circuit also increases. The
rectification efficiency at both frequency points of the rectifier circuit increases as the input
power increases. In the power capacity range, when the input power reaches 40 dBm, the
maximum rectification efficiency is obtained. Different resistance DC loads have a certain
impact on the rectification efficiency. As shown in Figure 12(b), a 50-ohm DC load can get
the best efficiency.
The circuit board is made of RO4350B board, the dielectric constant is 3.6, the thick-
ness is 0.508 mm, and the size of the circuit board is 105 mm × 50 mm. The signal source
adopts an Agilent N9310A RF signal generator, which can support 9 kHz–3 GHz continu-
ous wave output, and the output level range is −127–+13 dBm. Since the maximum output
signal power is lower than the experimental requirements, the signal source is followed by
a linear power amplifier with a gain of 20 dB to make the RF output signal power higher
than 40 dBm. The output terminal of the power amplifier is connected to the RF cable to
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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 9

Figure 9. the final circuit specific parameters

the input port of the rectifier circuit. And the grid RF output terminal is connected to an
RF load, and the drain bias terminal is connected to a DC adjustable resistor. To prevent
the transistor from being damaged due to excessive heat consumption, the circuit under
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10 X. HAN ET AL.

Figure 10. 1–2.5 GHz rectification efficiency simulation results

Figure 11. The output voltage waveform when the input signal is 30–40 dBm. (a) The output voltage
waveform of the HEMT drain pin; (b) The DC output voltage after low-pass filtering

test is fixed on the heat sink with silicone grease, and a fan is added for heat dissipation.
Finally, the processing test is shown in Figure 13.
Experiment process:

(1) To ensure that the output signal at the output terminal of the power amplifier is sta-
ble at 40 dBm, we need to connect the output terminal of the power amplifier to an
attenuator first and then to a power meter. Set the signal source to a 1–2 GHz radio
frequency signal with 100 MHz steps, and record the output signal size displayed by
the signal source when the power amplifier output signal power is 40 dBm.
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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 11

Figure 12. Diagram of simulation results. (a) The rectification efficiency of two operating frequency
points when the input power is 30–40 dBm; (b) The rectification efficiency of different DC loads when
the input power is 40dBm

Figure 13. Experimental platform. (a) Physical processing diagram; (b) Test diagram.

(2) Build a complete experimental platform, and place the equipment correctly according
to the test needs. Cables must be placed orderly during the connection process to avoid
accidents. And, the cooling devices such as fans is estimated in advance to ensure the
cooling system is normal. Rectifier circuit grid power supply modulation −6.5 V, DC
electronic load is adjusted to 50-ohms. Adjust the output power of each frequency
point of the signal source to the value recorded in the process (1), and record the
voltage and current displayed by the DC electronic load at the output.

After experimental testing, when the 1.7 GHz RF signal input power is 10W (40 dBm),
the DC output voltage is 18 V, the current is 0.36A, the DC load is 50-ohms, the maximum
output DC power reaches 6.5W, the ripple factor is 256 mV/18V = 1.4%, the test result as
shown in Figure 14(b). Under the same conditions, the 1.15 GHz radio frequency signal is
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12 X. HAN ET AL.

Figure 14. Test results. (a) 1.15 GHz rectified output power; (b) 1.7 GHz rectified output power.

Figure 15. Rectification efficiency corresponding to different RL .

rectified, the DC output voltage is 15.75 V, the current is 0.316A, the DC load is 50-ohms,
and the maximum DC output power reaches 5W. The test result is shown in Figure 14(a).
As shown in Figure 14, because the experiment involves many instrument cable
adapters, there is inevitable energy loss during the experiment, and the overall test result
has a certain error compared with the simulation. The rectification efficiency η can be
calculated by the formula (22).
VDC 2
η= (13)
RL PRF
We choose this RL based on the simulation of the rectifier device. It can be selected arbitrar-
ily within a certain range, and the rectification efficiency error does not exceed one percent.
The reason why RL is chosen like this is that there are parasitic resistances in the rectifier
device, and if the RL we choose does not match the parasitic resistance, the efficiency will
be reduced as shown in Figure 15.
Experimental results show that in the L-band, the signal rectification efficiency at the
two frequency points of 1.15 and 1.7 GHz reaches 50% and 65%, respectively.
From Figure 16, we can see that although there are errors between the test data and
the simulation data, the overall trend is consistent with the simulation data. From this, we
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JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 13

Figure 16. Simulation and test results in the L-band when the input power is 10W.

can infer that the main reason for the error is the actual line loss and Loss of circuit board
material.

4. Conclusion
This paper designs a high-power dual-frequency rectifier circuit that works at 1.15 and
1.7 GHz using GaN HEMT as the rectifier device. The output DC power reaches 6.5W,
which is far beyond the conventional diode rectifier circuit in terms of power capacity.
After theoretical derivation, this article has tested and verified two points of view.
(1) According to the GaN HEMT modeling technology, under a specific gate voltage,
its drain–source has a reverse-conducting forward-cut I-V characteristic, and a large
breakdown voltage range, which can be used as a high-power rectifier device.
(2) The dual-frequency matching circuit can use the same matching structure to match
the different impedances of the two frequency points to a 50-ohm load. From the theo-
retical analysis formula, the characteristic impedance and electrical length of each branch
are derived and the harmonic suppression circuit for harmonic suppression by paralleling
the quarter-wavelength open branches. After that, harmonics are reflected to the transistor
by the harmonic suppression circuit to continue to participate in the rectification, thereby
achieving the purpose of improving the rectification efficiency.
Compared with the Schottky diode rectifier circuit that has been more researched, there
are fewer related researches based on the GaN HEMT rectifier circuit. Driven by the back-
ground of the demand for high-power rectification, the analysis of the I-V characteristics
of GaN HEMT under different working conditions proves that it can be used as a rectifier
device, thereby achieving an improvement in the power capacity of the rectifier circuit. In
terms of broadening bandwidth, the target of dual-frequency operation is achieved through
principle analysis, formula derivation, and simulation optimization. The overall simula-
tion analysis shows that the rectification efficiency reached 50% and 65% at the operating
frequency of 1.15 and 1.7 GHz and the input power of 10W [16–18].
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14 X. HAN ET AL.

Acknowledgment
This work is supported by ‘Sichuan Science and Technology Program (grant number2020YJ0271
and grant number 2020YJ0273)’.

Disclosure statement
No potential conflict of interest was reported by the author(s).

Funding
This work was supported by Sichuan Science and Technology Program: [Grant Number
2020YJ0271,2020YJ0273].

ORCID
Xu Han http://orcid.org/0000-0001-6082-1386

References
[1] Shin S, Shin J, Song B, et al. Wireless power transfer system for high power application and a
method of segmentation[C]. 2013 IEEE Wireless Power Transfer (WPT), Perugia. 2013: 76–78.
[2] Ashoor AZ, Almoneef TS, Ramahi OM. A planar dipole array surface for electromagnetic
energy harvesting and wireless power transfer[J]. IEEE Trans. Microwave Theory Tech.
2018;66(3):1553–1560.
[3] Zhang H, Zhu X. A broadband high efficiency rectifier for ambient RF energy harvesting[C].
2014 IEEE MTT-S International Microwave Symposium (IMS2014), Tampa, FL. 2014;30:1–3.
[4] Ignacio R, Maria N, Ruiz L, et al. GaN microwave DC–DC converters[J]. in IEEE Transactions
on Microwave Theory and Techniques. 2015;63(12):4473–4482.
[5] You F, Wang Y, Dong S, et al. Waveform-based design of a 2.8-GHz self synchronous class-E
RF-DC rectifier with GaN transistor[C]. 2018 Asia-Pacific Microwave Conference (APMC),
Kyoto. 2018: 126–128.
[6] Hamano K, Suzuki A, Nishikawa K, et al. 2.4/5.8GHz dual-band rectifiers for aerospace wireless
sensor and RF energy harvester system[C]. 2019 IEEE Radio and Wireless Symposium (RWS),
Orlando, FL, USA. 2019: 1–4.
[7] You F, Dong S, Wang Y, et al. Design method of self-driving RF-DC rectifier based on
waveform-guided solutions to passive matching network[J]. in IEEE Transactions on Power
Electronics. 2019;34(7):6498–6509.
[8] Liu W, Huang K, Wang T, et al. Broadband high-efficiency RF rectifier with a cross-shaped
match stub of two one-eighth-wavelength transmission lines. in IEEE Microwave and Wireless
Components Letters. Oct. 2021;31(10):1170–1173.
[9] Haider MF, Zhang S, You F, et al. A high-efficiency self-synchronous RF-DC rectifier with a
fixed broadband phase offset. in IEEE Microwave and Wireless Components Letters. March
2021;vol. 31(no. 3):324–327.
[10] Qu H, et al. A dual-frequency microwave rectifier circuit for microwave power transmission.
2021 IEEE MTT-S International Wireless Symposium (IWS). 2021: 1–3.
[11] Litchfield M, Schafer S, Reveyrand T, et al. High-efficiency X-band MMIC GaN power
amplifiers operating as rectifiers[C]. 2014 IEEE MTT-S International Microwave Symposium
(IMS2014), Tampa, FL. 2014: 1–4.
[12] Hamano K, Suzuki A, Nishikawa K, et al. 2.4/5.8G < Hz dual-band rectifiers for aerospace
wireless sensor and RF energy harvester system[C]. 2019 IEEE Radio and Wireless Symposium
(RWS), Orlando, FL, USA. 2019: 1–4.
Downloaded from https://iranpaper.ir http://pooyamoshaver.com
Puyamoshaver@gmail.com
JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 15

[13] You F, Dong S, Wang Y, et al. Design method of self-driving RF-DC rectifier based on
waveform-guided solutions to passive matching network[J]. in IEEE Transactions on Power
Electronics. 2019;34(7):6498–6509.
[14] Dang K, Zhang J, Zhou H, et al. Lateral GaN schottky barrier diode for wireless high-power
transfer application with high RF/DC conversion efficiency: from circuit construction and
device technologies to system demonstration[J]. in IEEE Transactions on Industrial Electron-
ics. 2019;67.
[15] Jardel O, Groote FD, Reveyrand T, et al. An electrothermal model for AlGaN/GaN power
HEMTs including trapping effects to improve large-signal simulation results on high VSWR[J].
in IEEE Transactions on Microwave Theory and Techniques. 2007;55(12):2660–2669.