Article 1

Design of a Wide Dynamic RF-DC Rectifier Circuit based on 2

Unequal Wilkinson Power Divider 3

Cheng Peng 1,2, Zhihao Ye 1, Jianhua Wu 1,*, Cheng Chen 1, Zerun Wang 1 4

1 Naval University of Engineering, Wuhan Hubei, 430010, China 5

2 National University of Defense Technology, Wuhan Hubei, 430010, China 6
* Correspondence: raul0421@sina.com.cn 7

Abstract: In this paper, a dual-channel RF-DC microwave rectifier circuit with a 2:1 power 8
distribution ratio of Wilkinson power splitter is designed. The rectifier circuit works at 2.45Ghz. 9
After impedance matching and tuning, the structure can broaden the dynamic power range of the 10
rectifier circuit while maintaining the maximum rectifier efficiency. Compared with HSMS2820 11
rectifier branch, this design extends 4dBm and 3dBm respectively in the power dynamic range of 12
over 60% efficiency and over 50% efficiency. Compared with the HSMS2860 rectifier branch 13
efficiency of 60% and efficiency of more than 50%, the power dynamic range is expanded by 5dBm 14
and 2dBm respectively. This shows that the technology is helpful to improve the stability of energy 15
conversion at the receiver end of microwave wireless energy transmission system. Finally, the 16
rationality of this conclusion is verified by establishing a mathematical model. 17

Keywords: Unequal Wilkinson power divider; wide dynamic; RF-DC microwave rectifier circuit 18
19

1. Introduction 20

Wires have been always as carriers of power transmission since electric energy was invented. 21
However, with the technical progress and expansion of human activity space, power transmission 22
through wires cannot satisfy special power demands anymore (such as autonomous charging robots 23
and satellites, etc.). Under the circumstance, Wireless Power Transfer (WPT) emerged at the right 24
moment [1]. Relative to Inductive Power Transfer (IPT) [2] and Resonant Power Transfer (RPT) [3], 25
Microwave Wireless Power Transfer (MWPT) is featured with remote transmission distance, high 26
power, and certain penetrability so it is increasingly concerned by more people. Particularly, with 27
the development of new energy technology and people’s attention on solar energy, MWPT advan- 28
taged with remote transmission distance will develop an important role in power transmission of 29
solar power stations (SPSs) [4]. Moreover, the device can be located near sources of radiation, such 30
as base stations, to recycle electromagnetic energy. In the MWPT system, microwave rectifier circuit 31
at the receiver end can convert radio frequency (RF) energy to direct current (DC) energy, playing 32
a crucial role, as shown in the red box in Figure 1. 33

DC Receiving DC
Transmitting
antenna antenna

Microwave power Microwave

Free space
generator rectifier circuit

Ƞt Ƞs Ƞr
34

Figure 1. Schematic Diagram of the MWPT System. 35

In practical applications, overall efficiency of MWPT system’s recruiter circuit at the 36

receiver end is extremely unstable because RF power gained by receiving antennas will 37

Electronics 2021, 10, x. https://doi.org/10.3390/xxxxx www.mdpi.com/journal/electronics

Electronics 2021, 10, x FOR PEER REVIEW 2 of 11

be affected by topography, landform, ground feature, transmission path, and polarization 38

matching. When input power is changed, there will be a great change in input impedance 39
due to nonlinearity of rectifying devices, resulting in impedance mismatch and extreme 40
reduction of rectification efficiency. To overcome such an issue, wide dynamic RF-DC mi- 41
crowave rectifier circuit is widely concerned by domestic and overseas scholars. The so- 42
called wide dynamic RF-DC microwave rectifier circuit remains RF-DC conversion effi- 43
ciency at a higher level when input power is changed at a wider scope. According to cur- 44
rent literature, some progress has been gained in such a field. For example, a scholar used 45
MOSFET’s sensitivity to voltage to design two lines of self-adaptive control rectifier circuit 46
[5]. Switching the field-effect tube control circuit between series and parallel expands the 47
working range of circuit power. Even if the principle of the power control technology is 48
simple, this enhances microwave rectifier circuit’s adaptability to different input power 49
to some extent. Since the complicated control circuit or network like MOSFET is intro- 50
duced, this will consume some input power, leading to affect rectifier circuit efficiency. 51
For this reason, a scholar proposed a design method of wide dynamic rectifier circuit 52
based on the passive microwave network. A scholar from the Massachusetts Institute of 53
Technology (MIT) put forward the real impedance compression technique [6]. First of all, 54
rectifier circuit’s impedance changed with input power is adjusted to real impedance 55
through the differential circuit and then the change scope is declined. This has realized 56
wide dynamic rectification, there is a certain limitation. In recent two years, multi-channel 57
output and energy recycle technology based on mismatching property has become a hot 58
spot. Based on two lines of microwave rectifier circuit, a research team at the South China 59
University of Technology recycled mismatching reflective energy through a directional 60
coupler and enhanced rectifier circuit’s dynamic scope for power response [7]. 61
A microwave network of Wilkinson power divider is used in this paper to expand 62
the dynamic power range. Of rectifier power. The RF power distribution technology is 63
adopted to divide input RF energy into two lines of 2:1. One line is RF-DC circuit with 64
good high-power response and another line is RF-DC circuit with good lower-power re- 65
sponse. While in the literature [8] have a similar design, but this paper this paper imple- 66
mented is different, the first is based on the three band pass filter as a dc filter suppress 67
harmonic produced by nonlinear devices, secondly this paper adopts two levels before 68
and after the impedance matching to ensure the transmission efficiency of the whole cir- 69
cuit to keep the work frequency is higher, the most important of all,Most literatures only 70
give the engineering implementation method and simple qualitative description. In this 71
paper, an approximate mathematical model is established to explain the real reason why 72
this method achieves wide dynamic.Because of the characteristics of the dual rectifier cir- 73
cuit, when the input power changes dynamically, the overall RF-DC conversion efficiency 74
remains high. 75

2. Single RF-DC circuit design 76

Before designing the dual RF-DC microwave rectifier circuit, the single RF-DC mi- 77
crowave rectifier circuit should be designed in Advanced Design system(ADS) 2017 78
SOFTWARE, showing the structure in Figure 2. It is believed that the single RF-DC mi- 79
crowave rectifier circuit is the most traditional RF-DC rectifier, in which a receiving an- 80
tenna converts microwave energy to RF energy in the microwave circuit and then converts 81
to DC energy through the rectifier network composed of a Shottky diode, arriving at the 82
load in the end. Given that a diode is a nonlinear component and forms higher harmonic, 83
a DC filter should be connected between the rectifier network and the load, in hope of 84
inhibiting the harmonic influence and preventing high-frequency energy leakage. To en- 85
hance transmission efficiency, an impedance matching network should be connected be- 86
tween the rectifier circuit and the antenna to reduce high-frequency energy reflection. 87
Sometimes, it is also necessary to perform impedance matching between the DC filter and 88
the load separately. 89
Electronics 2021, 10, x FOR PEER REVIEW 3 of 11

RFin

Rectifying
Matching DC pass DC
circuit
network filter Load
90
Figure 2. Structure Diagram of the Single Microwave Rectifier Circuit. 91

2.1. Design of the DC Filter 92

A DC filter is an important part of microwave energy collecting system. As shown in 93
the microwave energy collecting system drawing of Figure 2, it can be observed that the 94
DC filter is situated between the RF-DC microwave rectifier circuit and the end load. Since 95
the Schottky diode is a nonlinear component, higher harmonic will be formed during the 96
rectifier process, leading to affect the rectifier waveform and additional energy loss. 97
Generally speaking, such higher harmonic occurs in resonant frequency’s multiples of two. 98
For instance, when resonant frequency is 2.45GHz, primary harmonic occurs at 4.9GHz. 99
At the same time, such higher harmonic will bring additional energy loss while exerting 100
an impact on load voltage. The DC filter enables DC component for passing while higher 101
harmonic generated from the RF-DC microwave rectifier circuit reflects back to the diode 102
for rectification until it is completely converted to DC component, strongly enhancing 103
rectification efficiency. 104

H=0.762mm
Εr=2.65

90
PORT1 L2
90
L4 L6 PORT2
90
L1 L3 L5 L7

105
Figure 3. Structure Diagram of a Triband Filter. 106

Low pass or band elimination is available in the direct filter. Given that primary, 107
secondary, and triple harmonic only generate at 2.45GHz, 4.9GHz, and 7.35GHz. If a band 108
elimination filter is adopted, it will be good for further enhancing harmonic reflectivity, 109
improving rectification efficiency. To this end, a tri-band elimination filter is applied in 110
this paper to filter primary, secondary, and triple harmonic, as shown in Figure 3. Port 1 111
is connected with the output of the diode rectifier circuit, port 2 is connected with the 112
load，the thickness of the dielectric plate H  0.762mm ，and the dielectric constant 113
 r  2.65 ,Through simulation optimization, the size of each microstrip branch of the filter 114
circuit is determined as L1  3.75mm ， L2  5.4mm ， L3  12mm , L4  3.4675mm , L 5  10 mm , 115
L6  1.7675mm ， L7  6mm ，and, among which, the three parallel short branches adopt a 70- 116
degree fan structure to improve their impedance matching performance. 117
118

119
Figure 4. S Parameter Simulation of the Tri-band Elimination Filter. 120

It can be seen from S11 parameters of the tri-band filter in Figure 4 that this filter is 121
equipped with remarkable trafficability at the DC part while S21 parameter clearly shows 122
that such a value at primary harmonic 2.45GHz, secondary harmonic 4.9GHz, and triple 123
harmonic 7.4GHz respectively reaches -40dBm, -60dBm,and -30dBm, better eliminating 124
Electronics 2021, 10, x FOR PEER REVIEW 4 of 11

each harmonic’s influence on the rectifier circuit and showing excellent traceability and 125
harmonic inhibiting ability. The filter will re-reflect the harmonic generated back to the 126
diode rectifier circuit and continue to participate in the rectifier until it becomes DC 127
completely, greatly improving the circuit RF-DC conversion efficiency. At the same time, 128
when the frequency is 0, the insertion loss of the filter is only -1.115dB, so the filter has a 129
good DC conduction performance. 130
2.2. Single matching and optimization 131
The filter designed is linked between the Schottky diode and the load. Since 132
impedance matching is conducted in the band elimination filter in accordance with 50Ω 133
input impedance, a part of stub line in parallel is added between the Schottky diode and 134
the tri-band DC filter for impedance matching at the rear end. Then, the diode’s rectifier 135
circuit, the DC filter, and the load should be viewed as a load impedance as a whole while 136
stub lines in series and parallel should be added at the input port and rectifier circuit as 137
the front-end impedance matching, so as to optimize RF-DC conversion efficiency of the 138
entire rectifier circuit, as shown in Figure 5: 139

140
Figure 5. Structure Diagram of the Single Microwave Rectifier Circuit. 141

It is worth noting that as adjusting impedance matching, the overall input impedance 142
at the rear-end circuit should be measured during the process and then the size of 143
impedance stub should be confirmed in accordance with the rear-end input impedance 144
because it is necessary to match with different situations of two-line rectifier circuits. 145
Equipped with the unequal power divider, HSMS2820 diode showing a good response to 146
high-power input is applied in one circuit while due to small power in another circuit, 147
HSMS2860 diode showing a good response to low-power input should be adopted here. 148
Table 1 shows performance parameters of the two-type diode. 149

Table 1. Performance Parameters of HSMS2820/HSMS2860 Schottky Diode. 150

Backward Offset Saturation Launching

Types Ohmage Range
voltage capacitance current system
HSMS2820 6 15 0.7 2.2E-8 1.08 >-20dBm
HSMS2860 5 7 0.18 5E-6 1.08 >-20dBm

It is worth emphasizing that due to different Schottky diode in two-line rectifier 151
circuits, impedance matching of each circuit should be individually optimized. In fact, 152
different diodes will show diverse impedance characteristics at the same condition. To 153
optimize the overall effect of circuits, matching detail parameters of two-line diode’s 154
rectifier circuits should be optimized. With the purpose of verifying the rectification effect 155
of each circuit, input power is respectively set up as 6dBm, 7dBm, 8dBm, 9dBm, 10dBm, 156
11dBm, and 12dBm, gaining the each circuit’s output voltage curve changing with time, 157
as shown in Figure 6: 158
Electronics 2021, 10, x FOR PEER REVIEW 5 of 11

(a) The Load Voltage-Time Curve of HSMS2820 Circuit (b) The Load Voltage-Time Curve of HSMS2860 Circuit

Figure 6. Single Rectifier Load Voltage-Time Curve. 159

The curve in Figure 6 indicates that output voltage in each circuit excludes a negative 160
value. After confirming input power P=in=, output voltage V=out= basically remains at a 161
fixed value, indicating that this circuit has managed to realize RF-DC rectification. 162
Moreover, the higher Pin is, the larger output voltage Vout will be. When input power 163
closes but fails to reach the maximum rectification efficiency, voltage ripple disturbance 164
is enlarged. As closing to the maximum rectification efficiency, the diode reversely breaks 165
down disturbance triggered by the effect. Due to the small sampling value as a whole, it 166
is further from the maximum rectification efficiency value of HSMS2820. Hence, for 167
sampling power, HSMS2820 circuit is more stable than the output voltage of HSMS2860. 168
Input power Pin (unit dBm) is deemed as a variable. After conversion, the actual 169
Pin /10
input power P  10 ( unit mW) is gained and the real part of output voltage Vout 170
should be Vr(unit V) and Zload should be load impedance. PCE of the single RF-DC 171
microwave rectifier circuit efficiency can be calculated in accordance with the following 172
formula: 173
2
1000 V / Z load
r
PCE   100% 174
P
Through optimization, the single rectification efficiency-input power curve is 175
illustrated in Figure 7, showing that HSMS2820 diode performs good efficiency for higher 176
input power. When input power Pin is 23dBm, maximum RF-DC rectification efficiency 177
P [16,25], rectification efficiency is greater than 60% and the dynamic
is 77.55%. As in 178

range is 9dBm. When input power is in

P [13,26] , rectification efficiency is greater than 179
50% and the dynamic range is 13dBm. It can be observed from Figure 7(b) that HSMS2860 180
diode shows a favorable response to the lower input power. When input power Pin is 181

13dBm, the maximum rectification efficiency occurs as 77.66%. As

Pin [4,14] , 182
P [0,16],
rectification efficiency is greater than 60% and the dynamic range is 10dBm. As in 183
rectification efficiency is greater than 50% and the dynamic range is 16dBm. 184
Electronics 2021, 10, x FOR PEER REVIEW 6 of 11

HSMS2820 branch HSMS2860 branch

80 80

70 70

60 60

50 50
PCE(%)

PCE(%)
40 40

30 30

20 20

10 10

0 0

-10 -10
-10 0 10 20 30 40 -10 0 10 20 30 40
Input power(dBm) Input power(dBm)

(a) Rectification Efficiency—Input Power Curve of (b) Rectification Efficiency-Input Power Curve of
HSMS2820 Circuit HSMS2860 Circuit

Figure 7. Single RF-DC Circuit Efficiency-Input Power Curve. 185

3. Design of the dual RF-DC circuit 186

3.1. Design of the unequal power divider 187

To distribute the RF power at 2:1, a 2:1 power distribution network based on the 188
Wilkinson power divider is hereby designed through simulation software. The circuit 189
schematic diagram is illustrated in Figure 8: 190

191
Figure 8. Schematic Diagram of 2:1 Wilkinson Power Divider. 192

Assuming that the power ratio between port 2 and port 3 is K2=P3/P2, the following 193
design formula is applied. As K=1, this circuit is a power divider circuit, in which it can 194
be observed that the output line is matched with impedance R2=Z0K and R3=Z0/K, 195
instead of matching with impedance Z0=. A matching convertor is available for converting 196

such output impedances. As K  1/ 2 , output power at port 2 is exactly double of that 197
of port 3. 198
2
1 K
Z 03  Z 0
K3 199
2 2
Z 02  K Z 0 3  Z 0 K (1  K )
200
1
R  Z0 (K  )
K 201
Based on this principle, the unequal power divider is designed through simulation. 202
After figuring up the impedance characteristic, a plate with the thickness of H=0.762mm 203

and dielectric constant r

  2.65 should be selected. Through software simulation, the 204
unequal power divider S parameter curve is gained in Figure 9. The work frequency 205
reflectance of this power divider’s port 1 at 2.45GHz is S11=-28.747dB. Then, reflectance 206
at port 2 and port respectively reaches at S22=-33.608dB and S33=-35.803dB, implying that 207
Electronics 2021, 10, x FOR PEER REVIEW 7 of 11

this power divider has realized better impedance matching at the working frequency of 208
2.45GHz, showing excellent transmission efficiency. The insertion loss between port 1 and 209
port 2 is S21=-1.742dB and the insertion loss between port 3 and port 2 is S31=-4.966dB, 210
differing for 3.224dB. Such a result indicates that output power at port 2 is twice of port 3, 211
realizing power matching at 2:1 power divider ratio. 212

213
Figure 9. 2:1 Wilkinson Power Divider S Parameter Curve. 214

3.2. Overall circuit debugging 215

The single RF-DC microwave rectifier circuit is respectively linked to HSMS2820 216
diode rectifier circuit I showing a good response to high-input power at port 2 and 217
HSMS2860 diode rectifier circuit II at port 3 of this power divider. Given that the power 218
divider introduced will affect the overall matching characteristic of the circuit, each 219
branch has been adjusted to the matching state but cannot be dramatically adjusted. The 220
fine-tuning optimization method is applied for the load to adjust the load in upper and 221
lower circuits into different values. The optimized load of the rectifier circuit I and the 222
rectifier circuit II is respectively confirmed as Zload1=430Ω and Zload2=260Ω, showing 223
the excellent overall performance in the circuit. The system’s resonant frequency is still 224

2.45GHz, medium thickness is H=0.762, dielectric constant is r , microstrip line

  2.65 225
texture is copper, thickness is T=0.035mm, and loss angle tangent is set up as tanD=0.001. 226
The schematic diagram and layout of the dual RF-DC microwave rectifier circuit based on 227
the unequal power divider can be gained through simulation design, as shown in Figure 228
10: 229

Matching 90

circuit 90

Branch Ⅰ 90
Vout1

HSMS2820
2:1Wilkinson DC pass filter
Power divider
Matching Zload1
circuit

R
Pin

Matching 90

circuit 90

90 Vout2
50 Ohm

Branch Ⅱ HSMS2860
DC pass filter
Matching Zload2
circuit

230
Figure 10. The Schematic Diagram of 2:1 Dual RF-DC Microwave Rectifier Circuit. 231

To analyze the relationship between rectification efficiency and input power, the load 232
and real output voltage at circuit 1 are respectively set up as Zload1= and Vout1(unit V). 233
Then, the load and real output voltage at circuit 2 are respectively established as Zload2 234
and Vout2(unit V). Even if output voltage passes through DC filtering, there are still fewer 235
high-frequent components (DC voltage ripples). Since such high-frequency components 236
cause an extremely small influence, it can be ignored. Rectification efficiency of the entire 237
Electronics 2021, 10, x FOR PEER REVIEW 8 of 11

circuit is PCE and input power is Pin(unit dBm). Through conversion, the actual input 238
Pin /10
power is gained as P  10 (unit: mW). Then, the total efficiency of the dual RF-DC 239
microwave rectifier circuit is calculated according to the following formula: 240
2 2
(V out 1 / Z load 1  Vout 2 / Z load 2 ) 10000
PCE  100%
P 241
The input power is set up as Pin=. The dynamic range of Pin variable parameters at 242
high-frequency circuit simulation software is set up as -10dBm-40dBm. According to the 243
calculation formula, the efficiency-input power relationship curve of the dual RF-DC 244
rectifier circuit based on the unequal power divider is plotted in Figure 11. 245

2：1 rectifier

80

70

60

50
PCE(%)

40

30

20

10

-10
-10 0 10 20 30 40
Pin(dBm)
246
Figure 11. Transmission Efficiency Comparison on the Single/ Dual RF-DC Microwave Rectifier Circuit. 247

It can be observed from the simulation curve that the maximum rectification 248
efficiency 75.49% of the 2:1 dual RF-DC microwave rectifier circuit occurs at Pin=18dBm. 249
At Pin=13dBm within the dynamic range of 12dB-25dBm, RF-DC rectification efficiency is 250
greater than 60%; At Pin=18dBm within the dynamic range of 9dBm-27dBm, RF-DC 251
rectification efficiency is greater than 50%. 252

4. Comparison analysis 253

To better clarify the influence of the dual RF-DC microwave rectifier circuit based on 254
unequal Wilkinson power divider on the dynamic scope of circuit power, the 2:1 dual 255
rectifier circuit is compared with the dynamic power range of HSMS2820 circuit and 256
HSMS2860 circuit. The curves of three-type rectifier circuits’ rectification efficiency PCE 257
changing with input power Pin are plotted in Figure 12. It can be observed from maximum 258
rectification efficiency that 2:1 dual RF-DC rectification efficiency is slightly lower than 259
that of the single one because the complicated circuit structure brings additional energy 260
loss (such as thermal loss of circuits). However, from the dynamic power range, only 261
13dBm of the dynamic power range reaches more than 60% of 2:1 dual RF-DC rectification 262
efficiency. Relative to HSMS2820 circuit, it is expanded by 4dBm while relative to 263
HSMS2860, it is broadened by 3dBm. There is 18dBm in the dynamic power range above 264
50%, it is expanded by 5dBm relative to HSMS2820 circuit and it is broadened by 2dBm 265
relative to HSMS2860. The simulation result demonstrates that relative to the traditional 266
single RF-DC microwave rectifier circuit, this design can remarkably widen the dynamic 267
RF-DC power range. 268
Electronics 2021, 10, x FOR PEER REVIEW 9 of 11

HSMS2860 branch
HSMS2820 branch
80
2：1 rectifier

70

60

50

PCE(%)
40

30

20

10

-10
-10 0 10 20 30 40
Pin(dBm)
269
Figure 12. Comparison on the Dynamic Power Range. 270

With the purpose of further demonstrating feasibility of this technology, a 271

mathematical model is hereby established to analyze the fundamental principle of this 272
technology. The approximation method is adopted, in which the efficiency-power curve 273
of diode 1 and diode 2 is assumed as the equilateral triangle structure. Among them, the 274
maximum rectification efficiency of diode 1 and diode 2 respectively occurs at input 275
power Pin1=3mW and Pin2=6mW, as plotted in Figure 13. 276

277
Figure 13. The Mathematical Model of the Wider Dynamic Dual RF-DC Microwave Rectifier Circuit. 278

It can be observed from the figure that both dynamic power ranges with above 50% 279
of efficiency at diode 1 and diode 2 are 1mW. To calculate the dynamic power range above 280
50% of rectification efficiency of 2:1 dual RF-DC rectifier circuit, input power Pin of 2:1 281
dual RF-DC microwave rectifier circuit is calculated as 3x (unit mW). Through 2:1 unequal 282
power divider, input power Pin1 and Pin2 respectively gained at the circuit of diode 1 283
and diode 2 should be x and 2x. Considering the function relationship of the equilateral 284
triangle, it should be discussed in different situations. 285
6  12，
Pin  3x   0， + 
1. As , input power of the circuit at diode 1 is 286
2   4，
Pin1  x   0， +
while input power of the circuit at diode 2 is 287
4  8，
Pin 2  2x   0， +
. Under the circumstance, rectification efficiency of 288
two circuits should be PCE1=PCE2=0, excluding in this paper. 289
7.5  10.5，
Pin  3x   6， 12
2. As , input power of the circuit at diode 1 is 290
2.5  3.5，
Pin1  x   2， 4
. Under the circumstance, the rectification 291
efficiency of this circuit should be PCE2≤50%. Input of the circuit at diode 2 is 292
5   7，
Pin 2  2x   4， 8
, so the rectification efficiency of this circuit should be 293
PCE2=0. Moreover, due to Pin1<Pin2, the total efficiency of 2:1 dual RF-DC 294
rectifier circuit is PCE<50, excluding in this paper. 295
Electronics 2021, 10, x FOR PEER REVIEW 10 of 11

Pin  3x   7.5，
9
3. As , input power of the circuit at diode 1 is 296
Pin1  x   2.5,3 Pin 2  x  5,6
and input power of the circuit at diode 2 is , 297
thus the total efficiency of 2:1 dual RF-DC rectifier circuit can be calculated in 298
accordance with the following formula: 299
x  3(x  2)/ 3+2x  （
3 2x 5)/ 3
PCE  100% 50%
3x 300
Pin  3 x  8.1mW 301
Pin  3x   9，
10.5
4. As , input power of the circuit at diode 1 is 302
Pin1  x  3,3.5 P  x   6,7
and input power of the circuit at diode 2 is in 2 , 303
the total efficiency of 2:1 dual RF-DC rectifier circuit can be calculated according 304
to the formula below: 305

x 3(4  x)/ 3+2x  （

3 7  2x)/ 3
PCE  100% 50%
3x 306
Pin  3 x  9.9mW 307
It can be observed from the above-mentioned mathematical derivation that the 308
dynamic power range of 2:1 dual RF-DC rectifier efficiency above 50% of efficiency is 309
Pin  3 x  8.1,9.9 mW
, reaching 1.8mW. relative to the single microwave rectification 310
of each circuit, it is expanded by 0.8mw because this 2:1 dual RF-DC microwave rectifier 311
circuit overcomes the limitation of each single diode rectification circuit to high power 312
input response capacity. High power is inputted to HSMS2820 Schottky diode with 313
stronger high power input response ability while small power is inputted to HSMS2860 314
Schottky diode showing a good response to low power and fully developing different 315
diodes’ rectification capacity for the applicable dynamic range of input to further optimize 316
the overall circuit efficiency and maintain stable total circuit rectification efficiency within 317
the larger dynamic range of input power. This shows important significance to MWPT 318
system engineering application. 319

5. Conclusion and prospect 320

The dual RF-DC microwave rectifier circuit based on unequal Wilkinson power 321
divider was designed in this paper. Two parts of input power with the ratio of 2:1 were 322
designed in this rectifier circuit, passing through HSMS2820 and HSMS2860 Schottky 323
diodes with different power response characteristics. Under the precondition of 324
optimizing impedance matching of each rectifier circuit, the overall dynamic power range 325
of the circuit is compared with the dynamic power range of each single circuit. Relative to 326
HSMS2820 circuit, the dynamic power range above 60% and 50% of efficiency is 327
respectively broadened by 4dBm and 3dBm. Relative to HSMS2860 circuit, the dynamic 328
power range above 60% and 50% of efficiency is respectively expanded by 5dBm and 329
2dBm, indicating that relative to the traditional rectifier circuit, 2:1 RF-DC microwave 330
rectifier circuit can better expand the dynamic power range while making MWPT system 331
maintain relatively stable RF-DC transfer efficiency at the constantly changeable 332
environment. In the end, a typical mathematical model was constructed to demonstrate 333
rationality of this conclusion. 334

References 335

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