Lecture #17

OUTLINE
• pn junctions (cont’d)
– Deviations from the ideal I-V
§ R-G current
§ series resistance
§ high-level injection
– Narrow-base diode

Reading: Chapter 6.2, 6.3

Prof. Changhwan Shin

 Effect of R-G in Depletion Region
• The net generation rate is given by
2
¶p ¶n ni - np
= =
¶t ¶t τ p (n + n1 ) + τ n ( p + p1 )
where n1 º ni e ( ET - Ei ) / kT and p1 º ni e ( Ei - ET ) / kT
ET = trap - state energy level
• R-G in the depletion region contributes an
additional component of diode current IR-G
¶p
xn
I R -G = - qAò dx
- x p ¶t
R -G

Prof. Changhwan Shin

• For reverse bias greater than several kT/q,
qAniW 1 æ n1 p1 ö
I R -G =- where τ 0 º çç τ p + τ n ÷÷
2τ 0 2 è ni ni ø
I n

Ip

Prof. Changhwan Shin

• For forward biases,
I R -G µ qAniWe qVA / 2 kT
In

Ip

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Effect of Series Resistance

Prof. Changhwan Shin

 High-Level Injection Effect
• As VA increases, the side of the junction
which is more lightly doped will eventually
reach HLI:
nn > nno (p+n junction)

or
p p > p po (n+p junction)

Þ significant gradient in majority-carrier profile

Majority-carrier diffusion current reduces the diode
current from the ideal

Prof. Changhwan Shin

Summary: Deviations from Ideal I-V

Forward-bias current Reverse-bias current

Prof. Changhwan Shin

 Derivation of Narrow-Base Diode I-V
• We have the following boundary conditions:

Dpn ( xn ) = pno ( e qVA / kT - 1) Dpn ( x' = xc ' ) ® 0

• With the following coordinate system:

x' 0 0 x' '
NEW:

x' c

• Then, the solution is of the form:

x¢ / L p - x¢ / L p
Dp ( x) = A1e + A2 e

Prof. Changhwan Shin

Applying the boundary conditions, we have:
Dpn (0) = A1 + A2
xc' / L p - xc' / L p
0 = A1e + A2 e
Therefore
æ e (xc - x ' )/ LP - e - (xc - x ' )/ LP
' '
ö
Dpn ( x' ) = pn 0 (e qV A / kT
- 1)ç ÷, 0 < x' < xc'
ç e xc' / LP - e - xc' / LP ÷
è ø

Note that sinh (x ) = ex - e - x

2
so that

Dpn ( x' ) = pn 0 (e qV A / kT
- 1)çç
[(
æ sinh xc' - x' / LP ) ]ö÷, 0 < x' < x '

è sinh x '
c / LP [ ] ÷ø c

Prof. Changhwan Shin

Excess Carrier Profiles: Limiting Cases

Long base (xc’ ® ¥):

æ e (x - x ' )/ L - e - (x - x ' )/ L ö
' '
c P c P

Dpn ( x' ) = pn 0 (e qV A / kT
- 1) ç ÷
ç e xc' / LP - e - xc' / LP ÷
è ø
' - x '/ L p '
æe x / L - x / LP x ' / L p ö
c P
e - e c
e
= pn 0 (e qV A / kT
- 1)ç ÷
ç e xc' / LP
-e - xc' / LP ÷
è ø
qV A / kT - x '/ L p
@ pn 0 (e - 1)e

Prof. Changhwan Shin

Narrow base (xc’ ® 0):

Dpn ( x' ) = pn 0 (e qVA / kT æ

- 1)çç
sinh [(x '
) ]
c - x ' / LP
ö
÷÷
[ ]
'
è sinh xc / LP ø

= pn 0 (e qVA / kT æ
- 1)çç
(x '
)
c - x ' / LP
ö
÷÷ = pn 0 (e qV A / kT æ x' ö
- 1)çç1 - ' ÷÷
'
è xc / LP ø è xc ø

Dpn is a linear function of x

à Jp is constant (no recombination)

Prof. Changhwan Shin

 ¶Dpn ( x¢) cosh (x ) = ex + e - x
2
J P = - qD p
¶x¢
ì 1 ü
ïï - L cosh[( xc - x ) / LP ]ïï
¢ ¢
J P = - qD p pn 0 e ( qV A / kT
-1 í P) sinh ( xc¢ / LP )
ý
ï ï
ïî ïþ
• For a p+n junction, then:
D p ni2 qVA kT cosh ( xc¢ / LP )
I = AJ P = qA (e - 1)
x¢ = 0
LP N D sinh ( xc¢ / LP )
= I 0¢ (e qVA kT
- 1)

where
'
I = qA (
DP ni 2 cosh xc' / LP )
0 (
LP N D sinh xc' / LP )
Prof. Changhwan Shin
Note: sinh (x ) ® x as x ® 0 and cosh(x ) ® 1 + x 2 as x ® 0

• If xc’ << LP:

2
cosh ( xc / LP ) 1 + ( xc / LP )
¢ ¢ LP
@ @
sinh ( xc¢ / LP ) (xc¢ / LP ) xc¢

D p ni2 æ LP ö D p ni2
I 0¢ = qA çç ÷÷ = qA
LP N D è xc¢ ø xc¢ N D

Prof. Changhwan Shin

Narrow (Short) Base Diode I-V Equation
Let WN º width of n - type region
WP º width of p - type region

and WN¢ º WN - xn << LP

WP¢ º WP - x p << LN

Then,

é DP DN ù qVA / kT
2
I = qAni ê + ú e( - 1 = I)0 e (
qV A / kT
-1 )
ëWN¢ N D WP¢ N A û

Prof. Changhwan Shin

Summary: Current Flow in pn Junctions
• The diode current is dominated by the term
associated with the more lightly doped side:
2 æ DP ö
qAni çç ÷÷ long n - side
è LP N D ø
p+n diode: I 0 @ I P ( xn ) =
2æ DP ö
qAni çç ÷÷ short n - side
è WN¢ N D ø
2æ D ö
qAni çç N ÷÷ long p - side
pn+ diode: I 0 @ I N (- x p ) = è LN N A ø
2 æ DN ö
qAni çç ÷÷ short p - side
è WP¢ N A ø
i.e. current flowing across junction is dominated by
carriers injected from the more heavily doped side

Prof. Changhwan Shin