INTERNAL ASSESSMENT TEST-1 Sixth Semester Department of Electronics and Communication Engineering EC 8095 VLSI DESIGN Time: 2 Hours Maximum marks: 70 Answer ALL questions
Q.N PART - A (10x2=20 marks)
CO K o 1 Define Logical Effort. CO1 K1 2 What is channel length modulation? CO1 K1 Define Moore’s Law CO1 3 K1 4 Define Noise Margin. CO1 K1 5 Infer body effect. CO1 K2 6 What is Critical path? CO2 K1 7 Infer bubble pushing. CO2 K2 8 Define Ratioed Circuits. CO2 K1
Q.No PART - B (5x13=65 marks)
CO K 9(a) Inspect the following: i) CMOS process enhancements (8) CO1 K4 ii) Layout design rules. (5) Or (b) Examine and derive the DC Transfer characteristics of CMOS inverter for the CO1 K4 various regions of operation. (13) 10(a) Compare the scaling techniques which improves the circuit performance (13) CO1 K3 Or (b) Develop three Capacitance and Voltage characteristics models for a MOS CO1 K3 transistor. (13) 11(a) Contrast asymmetric and skewed gates used for Static CMOS optimization process CO2 K4 (13) Or (b) Analyze pseudo nMOS and Ganged CMOS Logic for designing Ratioed Circuits. CO2 K4 (13)
Q.No PART - C (1x15=15 marks) CO K
12(a) Determine CMOS Logic for the following equations. (i) Y=( A . B )+ ( A . C )+(B . D) (7) CO1 K5 (ii) Y=( A . B )+(C . D) (8) Or (b) Determine the delay using RC Delay and Linear delay model. CO1 K5 (15)