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F5042 FUJI Intelligent Power MOSFET

Intelligent Power MOSFET

Features Outline drawings [mm] Connection
• Over temperature protection K-pack(s)
• Short circuit protection
• Low on-resistance
• High speed switching

Applications
• Solenoid driver
• Lamp driver
• Replacements for fuse and relay

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C, unless otherwise specified)
Description Symbol Characteristics Unit Remarks
Drain-source voltage VDSS 40 V DC
Gate-source voltage VGSS -0.3~7.0 V DC
Continuous drain current ID 8 A –
Maximum power dissipation PD 15 W –
Operating junction temperature Tj 150 °C –
Storage temperature range Tstg -55 ~ 150 °C –
Tj =150°C, L=5mH, I D =8A
Single pulse inductive load switch-off energy dissipation ECL 100 mJ
Single pulse, dv/dt≤10V/μs

Electrical characteristics (at Tc=25°C unless otherwise specified)

Description Symbol Conditions min. typ. max. Unit
Drain-source clamp voltage VDSS I D =1mA, VGS=0V 40 – 60 V
Gate threshold voltage VGS (th) I D =10mA, VDS=13V 1.0 – 2.8 V
Operation gate voltage (protection circuit operates) VGS (p) – 3.0 – 7.0 V
VDS=13V, VGS=0V – – 100 μA
Zero gate voltage drain current I DSS
VDS=30V, VGS=0V – – 1 mA
I GS (n)** – – 500 μA
Gate-sourse leakage current VGS=5V
I GS (un)*** – – 800 μA
Drain-source on-state resistance R DS (on) I D =5A, VGS=5V – – 140 mΩ
Turn-on time t on – – 50 μS
VDS=13V, I D =5A, VGS=5V
Turn-off time t off – – 50 μS
Over-temperature protection Ttrip VGS=5V 150 – – ˚C
Short circuit protection I OC VGS=5V 12 – – A
Note ** : Under normal operation
Note *** : Under self protection

Electrical characteristics (at Tc=-40~105°C unless otherwise specified)

Description Symbol Conditions min. typ. max. Unit
Drain-source clamp voltage VDSS I D =1mA, VGS=0V 38 – 62 V
Gate threshold voltage VGS (th) I D =10mA, VDS=13V 1.0 – 3.0 V
Operation gate voltage (protection circuit operates) VGS (p) – 3.0 – 6.7 V
VDS=13V, VGS=0V – – 170 μA
Zero gate voltage drain current I DSS
VDS=30V, VGS=0V – – 1.6 mA
I GS (n)* VGS=5V – – 600 μA
Gate-sourse leakage current
I GS (un)** VGS=5V, Tj>150˚C – – 940 μA
Drain-source on-state resistance R DS (on) I D =5A, VGS=5V – – 205 mΩ
Turn-on time t on – – 62 μs
VDS=13V, I D =5A, VGS=5V
Turn-off time t off – – 52 μs
Short circuit protection I OC VGS=5V 8.4 – – A
Note * : Under normal operation
Note ** : Under self protection

Thermal resistance
Description Symbol Test conditions min. typ. max. Unit
Rth (j-c) Junction-case – – 8.3 °C/W
Thermal resistance
Rth (j-a) Junction-ambient – – 125 °C/W

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Timing chart

Circuit block diagram

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Drain-source clamp voltage Gate threshold voltage

VDSS=f(Tj):ID=1mA,VGS=0V VGS(th)=f(Tj):VDS=13V,ID=10mA
80 4.0

70 3.5

max. max.
60 3.0

50 typ. 2.5
VDSS[V]

typ.

VGS(th)[V]
min.
40 2.0

30 1.5
min.
20 1.0

10 0.5

0 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Tj[ ] Tj[ ]

Gate-source leakage current Gate-source leakage current

IGS(n)=f(Tj):VGS=5V,VDS=0V IGS(n)=f(VGS):Tj=25 ,VDS=0V
700 700
650 650
600 600 max.

550 550
500 500
450 450
A]

A]

400 400
350 350
IGS(n)[

IGS(n)[

300 max. 300

250 250
typ. typ.
200 200
150 150
100 100
50 50
0 0
-100 -50 0 50 100 150 200 2 3 4 5 6 7 8
Tj[ ] VGS[V]

Drain-source on-state resistance Drain-source on-state resistance

RDS(on)=f(Tj):ID=5A,VGS=5V RDS(on)=f(Tj):ID=5A,Tj=25
300 300

250 250
VGS=5V
max.
200 200
]
]

RDS(on)[m
RDS(on)[m

150 150
VGS=5V
typ.
max.
100 100

typ.

50 50

0 0
-100 -50 0 50 100 150 200 2 3 4 5 6 7 8
Tj[ ] VGS[V]

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Zero gate voltage drain current Zero gate voltage drain current
IDSS=f(Tj):VDS=13V,30V,VGS=0V IDSS(max.)=f(Tj):VDS=13V,30V,VGS=0V
70 1800

1600
60
1400
50
1200

A]
40 1000
A]

IDSS(max.)[
IDSS[

800
30
VDS=30V
600 VDS=30V
typ.
20 max.
400

10
VDS=13V 200
VDS=13V
typ. max.
0 0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Tj[ ] Tj[ ]

Short circuit detection Short circuit detection

IOC=f(Tj):VGS=5V IOC=f(VGS):Tj=25
35 35

30 30

typ.
25 25

20 20
IOC[A]
IOC[A]

15 15
typ. min.

10 10

min.
5 5

0 0
-100 -50 0 50 100 150 200 2 3 4 5 6 7 8
Tj[ ] VGS[V]

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Forward on voltage
IF=f(VSD)
30

25
typ.

20

15
IF[A]

10

0
0.0 0.5 1.0 1.5 2.0
VSD[V]

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WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.

3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

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such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
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