Birla Institute of Technology & Science Pilani, Hyderabad Campus,

Shameerpet, Hyderabad -78

EEE/INSTR 342 – Power Electronics

Tutorial – 1
Topic: power diodes, transistors, basic concepts

1. Find the thermal voltage across a power diode at 250 C. If the forward voltage drop
is 1.2 V at a conducting current of 300A, then find the reverse saturation current
of the diode. Take emission coefficient as 2, Boltzmann constant k=1.3806 X 10-23
J/K.
2. The total reverse recovery time of a power diode is 3µsec and the rate of drooping
of current during reverse bias is 30A/µs. Determine the stored charge and peak
reverse current.
3. Two diodes are connected in series and 2 resistors, say R1, R2 are connected each
across each diode. The reverse blocking voltage across this series combination is
5kV. The reverse leakage currents of the two diodes are 30mA and 35mA
respectively. (a) Find the voltage across each diode if R1 = R2 =100 kΩ. (b) If the
voltage across each diode is half of the reverse blocking voltage, then find the
values of R1 and R2.
4. A bipolar junction transistor is connected in CE configuration as shown in the
above figure. The current gain β=40, load resistance Rc = 10Ω, dc supply voltage
Vcc = 130Ω, the base voltage VB = 10V. If VCEs= 1V, VBES=1.5V the find,
a. Value of RB such that saturation operation is achieved.
b. Value of RB if the base current is 5 times that during saturation.
c. Forced current gain
d. Power loss in the transistor in cases of (a) and (b)

5.
A power transistor has its switching waveforms as shown in above figure. If the
average power loss is to be limited to 300 W, find the switching frequency of the
power transistor.