Professional Documents
Culture Documents
Two examples:
- Microcars
Inertia Sensor for Automobile “Air Bag”Deployment System
Micro inertia sensor (accelerometer) in place:
Sensor-on-a-chip:
(the size of a
rice grain)
Rice grains
MEMS = a pioneer technology for
Miniaturization –
“Intelligent,”
“Robust,”
“Multi-functional,” and
Size reduction
Palm-top Wireless PC
Miniature devices
(1 nm - 1 mm)
A bottom-up approach
Inspired by Richard Feynman in 1959, with active
Nanotechnology (NT) R&D began in around 1995
(0.1 nm – 0. 1 m)**
There is a long way to building nano devices!
Nanotechnology:
$50 million in Year 2001
$26.5 billion in Year 2003
(if include products involving parts produced by nanotechnology)
Power
Supply
Micro
Input Transduction Output
Sensing
Signal Unit Signal
Element
Micro
Output Transduction
Actuating
Action Unit
Element
Power
Supply
Signal
Transduction &
Processing
Unit
Microsystem
Typical Microsystems Products
Inertia Sensor for “Air Bag” DeploymentSystem
(Courtesy of Analog Devices, Inc.)
Inertia Sensor for Automobile “Air Bag”Deployment System
Micro inertia sensor (accelerometer) in place:
Sensor-on-a-chip:
(the size of a
rice grain)
Collision
A micro gear-train by
Sandia National Laboratories
25 m
Capillary Electrophoresis (CE) Network Systems for Biomedic Analysis
A simple capillary tubular network with cross-sectional area of 20x30 µm is illustrated below:
Buffer
Reservoir,B
Analyte Analyte Waste
Reservoir,A Reservoir,A’
Injection Channel
Separation Channel
“Plug”
Waste
Reservoir,B’ Silicon Substrate
Work on the principle of driving capillary fluid flow by applying electric voltages at the
terminals at the reservoirs.
Commercial MEMS and Microsystems Products
INPUT:
Desired Sensing and/or Transduction
M easurements actuating unit
or element Signal
functions Conditioner
MEMS & Processor
OUTPUT:
Controller Actuator Measurements
or Actions
Signal
Processor
Comparator Measurements
Evolution of Microfabrication
● There is no machine tool with today’s technology can produce any device or MEMS
component of the size in the micrometer scale (or in mmsizes).
●The complex geometry of these minute MEMS components can only be produced
by various physical-chemical processes – the microfabrication techniques originally
developed for producing integrated circuit (IC) components.
Significant technological development towards miniaturization was
initiated with the invention of transistors by three Nobel Laureates, W.
Schockley, J. Bardeen and W.H. Brattain of Bell Laboratories in 1947.
Mechanical Engineering
Machine components design
Electrical Engineering Precision machine design Materials Engineering
Mechanisms & linkages Materials for substrates
Power supply
Thermomechanicas: & package
Electric systems for
electrohydro- (solid & fluid mechanics, heat Materials for signal
dynamics and transfer, fracture mechanics) mapping and transduction
signal transduction Intelligent control Materials for fabrication
Electric circuit Micro process equipment processes
design design and manufacturing
Integration of Packaging and assembly design
MEMS and CMOS
Chemical Engineering
Micro fabrication Industrial Engineering
processes Process design
Thin film technology Production control
Micro assembly
Commercialization of MEMS and Microsystems
Sphygmomanometers
Respirators
Acoustic wave sensor does not related to the sensing of acoustic waves transmitted in
solids or other media, as the nameimplies.
Primary application of these sensors is to act like “band filters” in mobile telephones and
base stations.
The term “BioMEMS” has been a popular terminology in the MEMS industry in
recent years due to the many break-through in this technology, which many
believe to be a viable lead to mitigate the sky-rocketing costs in healthcare costs
in many industrialized countries.
Biomedcial Sensors
For the measurements of biological substances in the sample and also for medical
diagnosis purposes.
Input signal: Biological sample (e.g., blood samples or body fluids typically in
minute amount in µL or nL)
Transduction unit: the product of whatever the chemical reactions between the
sample and the chemical in the sensing element will convert
itself into electrical signal (e.g. in milli volts, mV).
Pt electrode
Blood sample
Polyvinyl alcohol solution
V H+ H+ H+ H+ H+
i
Ag/AgCl Reference electrode
Working principle:
●The difference of potential between the two electrodes due to the build-up
of H2 in the Pt electrode relates to the amount of glucose in the blood
sample.
Biosensors
Biomolecule B
B Supply
Biomolecule Layer B B
Chemical
B B B B Optical
Output Thermal
Sensor
Signals Resonant
Electrochemical
ISFET (Ion Sensitive
Field Effect Transducer )
Chemical Sensors
Measurand Gas
Chemical Sensors-Cont’d
Measurand Gas
SiO2
Silicon Substrate
Chemical Sensors-Cont’d
SnO2 Pt + Sb CO
SnO2 Pt Alcohols
WO3 Pt NH3
Fe2O3 Ti-doped + Au CO
Ga2O3 Au CO
In2O3 None O3
Optical Sensors
● These sensors are used to detect the intensity of lights.
incident light
Semiconductor B R
Bias
Voltage Photon Energy
Photon Energy
Reverse _ R
Bias + p-Material
Voltage p n
Vout
n-Material Leads
(c)Photodiodes
Optical Sensors-Cont’d
Photon Energy
Photon Energy
Collector p n p Emitter Collector p n p Emitter
Base Base
(d) Phototransistors
Silicon (Si) and Gallium arsenide (GaAs) are common sensing materials.
GaAs has higher electron mobility than Si- thus higher quantum efficiency.
● Micro pressure sensors are used to monitor and measure minute gas
pressure in environments or engineering systems, e.g. automobile intake
pressure to the engine.
●They are among the first MEMS devices ever developed and producedfor
“real world” applications.
Silicon Die
with
Diaphragm
Cavity Cavity
Constraint
Base
Measurand
Fluid Inlet
R3 (+ve) R1(+ve)
Wire bond Piezoresistors
+
Metal film Vin a Vo
Dielectric layer b
-
R2(-ve) R4(-ve)
Silicone gel
Silicon Metal
Diaphragm Die Casing
Attach
Pyrex Glass Wheatstone bridge for signaltransduction
Constraining
Baseor Metal R1 R3
Header
Vo V in
Passage for
1
R R4 R2 R3
Interconnect
Pressurized
Medium R1,R 3= resistance induced by longitudinal and transverse stresses
R2,R4 = reference resistors
Pressure Sensors-Cont’d
Metallic
Silicon Cover
Signal output: capacitance changes
Electrode
(for higher temperature applications)
A
C r o
Metallic
V Electrode
d
r= Relative permittivity = 1.0 withair
Silicon Die
Cavity
Constraint o= Permittivity in vacuum = 8.85 pF/m
Base A = Overlap area
D = Gap between plate electrodes
Measurand
Fluid Inlet
Diffused p-type Vibrating beam:
electrode (n-type Si wafer,40 m wide
Silicon diaphragm x 600 m long x 6 m thick)
By resonant vibration 1200 m sq.x 100 m thick
12
Vo Vin 10
8
C C 6
4
2
0
0 0.5 1 1.5 2 2.5
Gap,micrometer
Pressure Sensors-Cont’d
The generated voltage (V) by a temperature rise at the bead (∆T) is:
V T
where β = Seebeck coefficient
Thermal Sensors-Cont’d
Thermocouples
Hot Junction
Region, Th
V N T
with N = number of
thermocouple pairs in the
thermopile.
Thermal Sensors-Cont’d
A micro thermal sensor:
3.6 mm
● 32 polysilicon-gold thermocouples
32 Thermocouples
16 m wide
Junction
Region
● Typical output is 100 mV
Diaphragm: 1.6 mm dia
x 1.3 m thick ● Response time is 50 ms
Top view
Hot Junction
Region
Thermocouples
20m
SiliconRim
Diaphragm Support
Elevation