Experiment 2 Student’s Manual

American International University- Bangladesh

Department of Electrical and Electronic Engineering
EEE 4214: Industrial Electronics Laboratory

Title: SCR Triggering Circuit Using UJT

Abstract:
This lab session is subjected to make the students understand the I-V characteristics of UJT
and its application as relaxation oscillator.

Introduction:
The Uni Junction Transistor (UJT) is a device that can be used in gate pulse, timing circuits
and trigger generator applications to switch and control both thyristors and triacs for AC
power control type applications. Since UJT is a triggering device, it can be used to trigger the
SCR.

Theory:
UJT (Unijunction Transistor) consists of a bar of lightly doped n-type silicon with a small
piece of heavily doped P type material (or Al rod) joined to one side. It has got three
terminals. They are Emitter (E), Base1 (B1), and Base2 (B2).

Structure:

Fig 1 (a): Symbol of UJT Fig 1(b): Pin configuration of UJT

Since the silicon bar is lightly doped, it has a high resistance & can be represented as two
resistors, RB1 & RB2. When VB1B2 = 0, a small increase in VE forward biases the emitter
junction. The resultant plot of VE & IE is simply the characteristics of forward biased diode
with resistance. Increasing VEB1 reduces the emitter junction reverse bias. When VEB1 = VRB1
there is no forward or reverse bias. & IE = 0. Increasing VEB1 beyond this point begins to
forward bias the emitter junction. At the peak point, a small forward emitter current is
flowing. This current is termed as peak current (IP). Until this point UJT is said to be
operating in cutoff region. When IE increases beyond peak current the device enters the
negative resistance region. In which the resistance rB1 falls rapidly & VE falls to the valley
voltage Vv. At this point IE = IV. A further increase of IE causes the device to enter the
saturation region. When voltage VBB is applied across the two base terminals B1 & B2 .The
𝑅𝐵1
potential of point A w.r.t B1 is 𝑉𝐴𝐵1 = 𝑉𝐵𝐵 ∗ = 𝜂𝑉𝐵𝐵 , where 𝜂 is called as intrinsic
𝑅𝐵1 +𝑅𝐵2
standoff ratio critically value of 𝜂 is from 0.51 to 0.82.Internal resistance RB1 + RB2 =RBB is
of order of 5 to 10 kΩ.

© Dept. of EEE, Faculty of Engineering, American International University-Bangladesh (AIUB) 1

 Fig 2 (a): Internal construction of UJT Fig 2 (b): Equivalent circuit of UJT

The graph of emitter to base1 voltage versus emitter current is called UJT characteristics. The
characteristics can be divided in three regions, cut-off region, negative resistance region and
saturation region. The most important region is negative resistance region. Negative
resistance region is the part of the characteristics whereas current increases voltage decreases.

Fig 3: V-I characteristics of UJT

Pre-Lab Homework:

Students should read the theory before coming to lab.

Apparatus:

i. SCR (TYN 612)

ii. UJT (2N2646)
iii. Transformer (220V:12V)
iv. Diode
v. LED
vi. Resistances (470 Ω, 6.8kΩ, 100 Ω, 1.2 k Ω, 100k pot)
vii. Capacitor (1uF)

Precaution:
The circuit setup contains 220V. Students should be cautious about this.

© Dept. of EEE, Faculty of Engineering, American International University-Bangladesh (AIUB) 2

Circuit Diagram:

Fig 4: complete experimental setup

Experimental Procedure:
1. Construct the circuit as shown in Figure 4.
2. Complete table 1 by observing the wave shapes.

Data Table 1:

No. Value of POT (KΩ) Delay angle (Degree) Output voltage (V)
1
2

Findings:

1. Draw wave shapes at base-1 of UJT (VB2), emitter of UJT (VE).and across the SCR.
2. Measure the output voltages across the load and determine delay angle in each case by
varying the POT.
3. Show the graphical representation of the conduction angle (180o-delay angle) vs.
output voltage (i.e. voltage across the load).

Simulation and Measurement:

Construct the circuit using your simulation software and compare the simulation results with
experimental data and comment on the differences (if any).

Questions for report writing:

1. Why is the full wave rectification used here?

2. What is the function of the diode in the gate circuit?
3. Explain the operation of the UJT relaxation oscillator.
4. Explain the role of capacitor and variable resistance in the emitter of UJT.
5. Why UJT trigging circuit is superior when compared to R and RC triggering circuit?
6. What do you mean by intrinsic standoff ratio and negative resistance region of UJT?
7. What is phase control and delay angle?
© Dept. of EEE, Faculty of Engineering, American International University-Bangladesh (AIUB) 3
Discussion:
Determine whether or not the theorem was verified. Discuss about the reasons behind the
achieved results and practical applications of the theorem based on the experiment.

Conclusion:
Summarize the experiment here and discuss whether the objectives were fulfilled or not within a
short paragraph.

References:

1. http://www.electronics-tutorials.ws/power/unijunction-transistor.html
2. http://www.docircuits.com
3. http://www.docircuits.com/circuit-editor/1134/ujt-relaxation-oscillator

© Dept. of EEE, Faculty of Engineering, American International University-Bangladesh (AIUB) 4