ED CIE-I Question Bank

Part - A

1. The most commonly used semiconductor material is

a) Silicon, b) Germanium, c) Boron, d) Arsenic

2. The types of carriers in a semiconductor are

a) 1, b) 2, c) 3, d) 4

3. Diffusion capacitance that exits during

a) Reverse bias, b) Forward bias, c) Both forward and reverse bias , d) None of the above

4. BJT is --------------

a) Voltage controlled device, b) Current controlled device, c) Both of them, d) None of

the above

5. In CB configuration the AC current gain (α) value is

a) 1, b) Less than 1, c) Greater than 1, d) None of the above

6. In a bipolar transistor which current is largest?

a) Collector current, b) Base current, c) Emitter Current, d) Base current or emitter current

7. Breakdown mechanism is during the

a. Forward bias, b. Reverse bias, c. Both forward bias and reverse bias

d. None of the above

8. Mass action law is

a. np = ni, b. np = pn, c. np = ni2 d. None of the above

9. At room temperature the current in an intrinsic semiconductor is due to

a. Holes, b. Electrons, c. Ions, d. Holes and Electrons

10. A transistor has two p-n junctions. The batteries should be connected such that

a. both junctions are forward biased, b. both junctions are reverse biased, c. one junction is
forward biased and the other is reverse biased, d. None of the above

11. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
a.100, b. 99, c.1.01, d. 0.99

12. Current gain of the Common Emitter is

a. High, b. Low, c. Medium, d. None of the above

Part - B

1. Calculate barrier potential in PN junction. Consider a silicon PN junction at 270 C with

doping densities are, NA = 1*10-18 cm-3 , ND = 1*10-15 cm-3 and Ni = 1.5 *10-10 cm-3
2. Define Mass-Action Law.
3. Write down Einstein relationship equation.
4. Write diode current equation.
5. What are the types of transistor configuration?
6. If a transistor has α = 0.97, find β. If β = 200, find α.
7. Sketch the symbols of CE, CB and CC transistors.
8. What are the three modes of operation involved in transistor?
9. What is doping?
10. Define transition capacitance of the diode.
11. List out the diode parameters.
12. What is barrier potential?
13. Define bipolar transistor.
14. In a CB configuration, emitter current is 6.5mA, collector current is 6.2mA. Find the
common base DC current gain.
15. List the h-parameters of the transistors.
16. Draw the i/p and o/p characteristics of CE configuration.

Part – C

1. With a neat diagram and explain the working of a PN junction diode in forward and reverse
bias conditions.
2. The reverse saturation current of silicon PN junction diode is 10 mA. Calculate the diode
current in forward bias voltage is 0.6 V at 270 C
3. A diode prating at 300K at forward bias voltage 0.4 V and current carries of 10 mA. When
voltage is changed to 0.42V the current becomes twice. Calculate the values of reverse
leakage current, η value of the diode.
4. List out the applications of PN junction diode.
5. Explain in details about the CE configuration with input and output characteristics.
6. A current gain of common emitter configuration, β = 50. Calculate the CB current gain (α),
base current when emitter current is 3 mA.
7. Drive the current gain equations for CE, CB and CC configurations with relationship
between α, β and γ.
8. In common base DC current gain of transistor is 0.984, if emitter current is 10 mA. Find out the base
current.
9. Derive transition capacitance of the PN junction diode.
10. For what voltage will be the reverse current in a PN silicon diode reach 80%of its saturation
value room temperature.
11. Explain the switching characteristics of PN junction diode.
12. The reverse saturation current of silicon PN junction diode is 10 µA. Calculate the diode
current in forward bias voltage is 0.6 V at 250 C.
13. Explain in details about the CB configuration with input and output characteristics.
14. Compare CB,CE,CC.
15. IB = 200 µA, IC = 2 mA, Find out i) β, ii) α, iii) IE, iv) if IB changes by +50 µA and IC
changes by +0.8 mA and find out new β value.
16. Expalain the h-parameters of CB, CC, CE configurations.