BASIC ELECTRONICS MCQ

1. Why is there a sudden increase in current in Zener diode?

a) Due to the rupture of ionic bonds

b) Due to rupture of covalent bonds

c) Due to viscosity

d) Due to potential difference

Answer: b

Explanation: The sudden increase in current in a Zener diode is due to the rupture of the many covalent
bonds present. Therefore, the Zener diode should be connected in reverse bias.

2. What is the semiconductor diode used as?

a) Oscillator

b) Amplifier

c) Rectifier

d) Modulator

Answer: c

Explanation: Semiconductor diode can be used as a rectifier. The function of a rectifier is that it converts
an alternating current into direct current by allowing the current to pass through in one direction.

3. What is an oscillator?

a) An amplifier with a large gain

b) An amplifier with negative feedback

c) An amplifier with positive feedback

d) An amplifier with no feedback

Answer: c

Explanation: An oscillator is considered as an amplifier with positive feedback. It converts direct current
from a power supply to an alternating current signal. It produces an alternating waveform without any
input.
4. What is rectification?

a) Process of conversion of ac into dc

b) Process of conversion of low ac into high ac

c) Process of conversion of dc into ac

d) Process of conversion of low dc into high dc

Answer: a

Explanation: Rectification is the process of conversion of alternating current into direct current. The
conversion first powers to alternating current then use a transformer to change the voltage, and finally
rectifies power back to direct current.

5. What is a Zener diode used as?

a) Oscillator

b) Regulator

c) Rectifier

d) Filter

Answer: b

Explanation: Zener diode can be used as a voltage regulator. They can also be used as shunt regulators to
regulate the voltage across small circuits. Zener diodes are always operated in a reverse-biased condition.

6. Forward biasing of p-n junction offers infinite resistance.

a) True

b) False

Answer: b

Explanation: No, this is a false statement. Forward biasing of p-n junction offers low resistance. In the
case of an ideal p-n junction, the resistance offered is zero. So, forward biasing does not offer any
resistance.

7. When a junction diode is reverse biased, what causes current across the junction?

a) Diffusion of charges

b) Nature of material

c) Drift of charges
d) Both drift and diffusion of charges

Answer: c

Explanation: The reverse current is mainly due to the drift of charges. It is due to the carriers like holes
and free electrons passing through a square centimeter area that is perpendicular to the direction of flow.

8. Identify the condition for a transistor to act as an amplifier.

a) The emitter-base junction is forward biased and the base-collector junction is reverse biased

b) No bias voltage is required

c) Both junctions are forward biased

d) Both junctions are reverse biased

Answer: a

Explanation: In order to use a transistor as an amplifier the emitter-base junction is set up as forward
biased and the base-collector junction is set up as reverse biased. This is the criteria for making a
transistor function as an amplifier.

9. What can a p-n junction diode be used as?

a) Condenser

b) Regulator

c) Amplifier

d) Rectifier

Answer: d

Explanation: A junction diode can be used as a rectifier. The rectifier converts alternating current into
direct current. During the positive half cycle, the diode is forward biased and allows electric current
through it.

10. What is a transistor made up of?

a) Chip

b) Insulator

c) Semiconductor

d) Metal

Answer: c
Explanation: A transistor is a semiconductor device. Transistors can work either as an amplifier or as a
switch. It is used to amplify or switch electronic signals. A transistor is a solid-state device made up of
silicon and germanium.

11. What is the SI unit of conductivity?

a) ?m

b) (?m)-1

c) ?

d) m

Answer: b

Explanation: The formula of the conductivity is the s=1/?.

So, the unit of resistivity is ?m.

Now, the unit of conductivity becomes the inverse of resistivity.

12. Which of the following expressions doesn’t represent the correct formula for Drift current
density?

a) J=sE

b) J=qnµE

c) J=µE

d) None

Answer : c

Explanation: The following formulae represent the correct expression for drift current density,

J=sE

And J=qnµE.

13. Does a semiconductor satisfy the ohm’s law?

a) True

b) False

Answer: a

Explanation: V=IR

J=sE
I/A=s(V/L)

V=(L/ sA)*I=(?L)*I/A=IR

Thus, above equation satisfies Ohm’s law.

14. In which range of temperature, freeze out point begins to occur?

a) Higher range

b) Lower range

c) Middle range

d) None

Answer: b

Explanation: At lower range of temperature, the concentration and conductivity decreases with lowering
of the temperature.

15. Which of the following expression represents the correct formula for the conductivity in an
intrinsic material?

a) ?=e(µn+µp )ni

b) s=e(µn+µp )ni

c) s=1/(e(µn+µp )ni)

d) ?=1/(e(µn+µp )ni)

Answer: b

Explanation: Option b is the correct formula.

Check this: Electronics & Communication Engineering Books | Electronics & Communication
Engineering MCQs

16. What is the voltage difference if the current is 1mA and length and area is 2cm and 4cm2
respectively?(?=2?m)

a) 0.025V

b) 25V

c) 0.25V

d) None

Answer: d
Explanation: V=IR

R=?l/(A)=2*2/4=100?

V=1mA*100

=0.1V.

17. Is resistivity is a function of temperature?

a)True

b)False

Answer: a

Explanation: Resistance depends on the temperature and the resistivity depends on the resistance, so now
the resistivity depends on the temperature.

18. What is the electric field when the voltage applied is 5V and the length is 100cm?

a) 0.5V/m

b) 5V/m

c) 50V/m

d) None

Answer: c

Explanation: E=V/L=5/100cm=5V/m.

19. Calculate the average random thermal energy at T=300K?

a) 0.038eV

b) 3.8eV

c) 38eV

d) 0.38eV

Answer: a

Explanation: Average random thermal energy=3/2*k*T=0.038eV.

20. In the below figure, a semiconductor having an area ‘A’ and length ‘L’ and carrying current ‘I’
applied a voltage of ‘V’ volts across it. Calculate the relation between V and A?

a) V = ((?*L)/A)*I
b) V = ((?*A)/L)*I

c) V = ((?*I)/(A*L))

d) V = ((?*I*A*L)

Answer: a

Explanation: Option A, satisfies the Ohm’s law which is V=IR where R=(?l)/A.

This set of Engineering Physics Multiple Choice Questions & Answers (MCQs) focuses on “Transistors”.

21. BJT stands for __________

a) Bi-Junction Transfer

b) Blue Junction Transistor

c) Bipolar Junction Transistor

d) Base Junction Transistor

Answer: c

Explanation: BJT stands for Bipolar Junction Transistor. It was the first transistor to be invented. It is
widely used in circuits.

22. The doped region in a transistor are ________

a) Emitter and Collector

b) Emitter and Base

c) Collector and Base

d) Emitter, Collector and Base

Answer: d

Explanation: There are three doped regions forming two p-n junctions between them. There are two types
of transistors n-p-n transistor and p-n-p transistor.

23. Which region of the transistor is highly doped?

a) Emitter

b) Base

c) Collector

d) Both Emitter and Collector

Answer: a

Explanation: In a transistor, emitter is of moderate size and heavily doped. Collector is moderately doped
and larger as compared to the emitter. Base is very thin and lightly doped.

24. Both the junctions in a transistor are forward biased.

a) True

b) False

Answer: b

Explanation: Emitter-base junction of the transistor is forwards biased while the collector-base junction of
the transistor is reverse biased or vice versa depending on the condition desired.

25. Which junction is forward biased when transistor is used as an amplifier?

a) Emitter-Base

b) Emitter-Collector

c) Collector-Base

d) No junction is forward biased

Answer: a

26. The MOSFET combines the areas of _______ & _________

a) field effect & MOS technology

b) semiconductor & TTL

c) mos technology & CMOS technology

d) none of the mentioned

Answer: a
Explanation: It is an enhancement of the FET devices (field effect) using MOS technology.

27. Which of the following terminals does not belong to the MOSFET?
a) Drain

b) Gate

c) Base
d) Source
Answer: c
Explanation: MOSFET is a three terminal device D, G & S.

28. Choose the correct statement

a) MOSFET is a uncontrolled device

b) MOSFET is a voltage controlled device

c) MOSFET is a current controlled device

d) MOSFET is a temperature controlled device

Answer: b
Explanation: It is a voltage controlled device.

29. Choose the correct statement(s)

i) The gate circuit impedance of MOSFET is higher than that of a BJT

ii) The gate circuit impedance of MOSFET is lower than that of a BJT

iii) The MOSFET has higher switching losses than that of a BJT

iv) The MOSFET has lower switching losses than that of a BJT

a) Both i & ii
b) Both ii & iv
c) Both i & iv
d) Only ii

Answer: c
Explanation: MOSFET requires gate signals with lower amplitude as compared to BJTs & has lower
switching losses.

30. Choose the correct statement

a) MOSFET is a unipolar, voltage controlled, two terminal device

b) MOSFET is a bipolar, current controlled, three terminal device

c) MOSFET is a unipolar, voltage controlled, three terminal device

d) MOSFET is a bipolar, current controlled, two terminal device
Answer: c
Explanation: MOSFET is a three terminal device, Gate, source & drain. It is voltage controlled unlike the
BJT & only electron current flows.