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NPN AT DC
Before beginning this lab, you should:

• Know the basic operations of NPN transistors

• Know how to use LTcpice simulator

After completing this lab, you should be able to:

• Do DC analysis of three circuits: (I) an NPN transistor that is biased in the active region, (2) an NPN transistor that is
biased in the saturation region, and (3) a diode-connected NPN transistor
• Be able to simulate the circuits to compare the results with the paper analysis
• Implement the circuits in an experimental setting, taking measurements, and comparing their performance with
theoretical and simulated results
• Qualitatively seeing the impact of transistor-to-transistor variations.

NPN AT DC

This lab is related to section 6.3 of Sedra and Smith Microelectronic circuit textbook. The used
transistor is a NPN transistor. An unformatted spice model is provided at the end of this manual
for your reference.

PART 1: DESIGN AND ANALYSIS

Consider the circuit shown in Figure 1:

FIGURE 16.3.1: NPN-based circuit. Related to Fig. 6.29(a) in S&S.

We need to design the circuit in Figure 1 such that IC = 1mA, VB = 9 V and VC = +5 V.

Use supplies of V+ = 30V and V_ = 0 V. Use β= 100.

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Pre-lab Calculations:
• Sketch the circuit in your lab book, clearly labeling the transistor’s three terminals.
• What are IB and IE?
• Based on these numbers, what is VE?
• You now have enough information to calculate RE and RC.
• Derive the Thévenin equivalent of RB1 and RB2. What values do you need to use to
achieve VB = 9V? Remember that IB ≠ 0.

LAB PROCEDURE
• Simulate your circuit using values of RE, RC, RB1, and RB2 based on your calculations.
• Report the values of VE, VC, IE, and IC.
• How closely do they match your calculations?

We now want to operate the transistor in saturation region. Redesign the circuit in Figure 1
such that IC = 1 mA, IE = 1.2 mA, VC = +2 V, and VCE = 0.2 V. Note that you must use the
saturation model.

• Sketch the circuit in your lab book, clearly labeling the transistor’s three terminals.
• Based on the specifications, calculate VE and VB.
• You now have enough information to calculate resistors in the circuit.
• What is the value of βforced?
• Simulate your circuit using your calculated values of resistors.
• Report the values of VE, VC, VB, 1E, IC and IB.
• How closely do they match your calculations?

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* Copyright © 2000 Linear Technology Corporation. All rights reserved.

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.model 2N2222 NPN(IS=1E-14 VAF=100
+ BF=200 IKF=0.3 XTB=1.5 BR=3
+ CJC=8E-12 CJE=25E-12 TR=100E-9 TF=400E-12
+ ITF=1 VTF=2 XTF=3 RB=10 RC=.3 RE=.2 Vceo=30 Icrating=800m mfg=Philips)

.model 2N2907 PNP(IS=1E-14 VAF=120

+ BF=250 IKF=0.3 XTB=1.5 BR=3
+ CJC=8E-12 CJE=30E-12 TR=100E-9 TF=400E-12
+ ITF=1 VTF=2 XTF=3 RB=10 RC=.3 RE=.2 Vceo=40 Icrating=600m mfg=Philips)

.model 2N3904 NPN(IS=1E-14 VAF=100

+ Bf=300 IKF=0.4 XTB=1.5 BR=4
+ CJC=4E-12 CJE=8E-12 RB=20 RC=0.1 RE=0.1
+ TR=250E-9 TF=350E-12 ITF=1 VTF=2 XTF=3 Vceo=40 Icrating=200m mfg=Philips)

.model 2N3906 PNP(IS=1E-14 VAF=100

+ BF=200 IKF=0.4 XTB=1.5 BR=4
+ CJC=4.5E-12 CJE=10E-12 RB=20 RC=0.1 RE=0.1
+ TR=250E-9 TF=350E-12 ITF=1 VTF=2 XTF=3 Vceo=40 Icrating=200m mfg=Philips)

.model FZT849 NPN(IS=5.8591E-13 NF=0.9919 BF=230 IKF=18 VAF=90

+ ISE=2.0067E-13 NE=1.4 NR=0.9908 BR=180 IKR=6.8
+ VAR=20 ISC=5.3E-13 NC=1.46 RB=0.023 RE=0.0223
+ RC=0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532
+ CJE=1.21E-9 TF=1.07E-9 TR=9.3E-9 Vceo=30 Icrating=7 mfg=Zetex) ; (C) 1993 ZETEX PLC, Last revision
14/3/97