Electronic Devices and Circuits

Name:__ABDULLAH______ Class Number__P16-6455_

Section:___EE-(B1)________________

Lab No: 8
DC ANALYSIS OF DIFFERENT BJT CIRCUITS.
________________________________________________________________________

OBJECTIVE:
To determine the quiescent operating conditions of the voltage divider and collector feedback
bias BJT configurations

EQUIPMENT:
Instruments
DMM
Components
Resistors: 680 Ω, 1.8 kΩ, 2.2 kΩ (2), 3.3 kΩ, 6.8 kΩ, 33 kΩ, 390 kΩ, 1MΩ
Transistors: 2N3904

THEORY:
Bipolar transistors operate in three modes: cutoff, saturation and active. In each of these
modes, the physical characteristics of the transistor and the external circuit connected to it
uniquely specify the operating point of the transistor. In the cutoff mode, there is only a small
amount of reverse current from emitter to collector, making the devise an open switch. In the
saturation mode there is a maximum current flow from collector to emitter, making the device a
closed switch. The amount of this current depends upon the external circuit connected to the
transistor. Both of these modes are used in digital circuits.
Active region of the transistor characteristics is employed for amplification with
minimum distortion. A DC voltage is applied to the transistor, forward biasing the base-emitter
junction and reverse biasing the base-collector junction, typically establishing a quiescent point
near or at the center of the linear region.
In this experiment we will investigate two biasing networks: voltage divider bias and
collector feedback bias configuration.
VOLTAGE DIVIDER BIAS
The voltage-divider bias circuit employs a feedback arrangement that makes the base-
emitter and collector-emitter voltages primarily dependent on the external circuit elements and
not the beta of the transistor. Thus, even though the beta of the individual transistors may vary
considerably, the location of the Q-point on the load line will remain essentially fixed.

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 Electronic Devices and Circuits

COLLECTOR FEEDBACK BIAS

In collector feedback bias circuit the base resistor is connected to the collector terminal of
the transistor and not to fixed supply voltage Vcc. Thus the voltage across the base resistance of
the collector feedback configuration is a function of the collector voltage and in turn to collector
current. In particular this circuit demonstrates the principal of negative feedback, in which the
tendency of an output variable to increase or decrease will result in a decrease or increase in the
input variable respectively. For instance, if Ic increases, Vc will reduce which will lower the level
of IB, thus offsetting the increase of Ic. The result is a design less sensitive to variations in its
parameters.

PROCEDURE:

Part 1: Determining β

A) Construct the circuit of Figure-1 using 2N3904 transistor. Insert the measured resistance
values.

Figure-1
RB(meas) =__________
RC(meas) =__________
RE(meas) =__________
b) Measure the voltages VB and VRC.
(Measured) VB = _________
(Measured) VRC = _________

National University of Computer & Emerging Sciences, Peshawar

 Electronic Devices and Circuits

c) Using the measured resistor values calculate the resulting base current,
IB = VRB / RB = (VCC – VB) / RB = _________
The voltage VRB was not measured directly for determining IB because of the loading effect
of the meter across the high resistance of RB.

d) Also calculate the collector current,

IC = VRC / RC = _________
e) Calculate β (=IC/IB) of the transistor and use this value for all the calculations in this
experiment.
β (3904) = ___________
Part 2: Voltage divider configuration

a) Construct the circuit of Figure-2 using 2N3904 transistor.

Figure-2

b) Record the measured value of each resistor.

R1meas = ___________
R2meas = ___________
RCmeas = ___________
REmeas = ___________
c) Using value of β determined in Part 1 for both transistors, calculate the theoretical values
of VB, VE, VC, VCE, IE, IC, and IB for the circuit of Figure-2 and record in Table-1.
National University of Computer & Emerging Sciences, Peshawar
 Electronic Devices and Circuits

d) Measure VB, VE, VC and VCE and record in Table-2. Calculate currents IE and IC. Also
measure voltages VR1 and VR2 and calculate currents I1 and I2 (I1=VR1/R1 and I2=VR2/R2)
using measured resistor values. Calculate the current IB using Kirchhoff’s current law
(IB=I1-I2). Insert the calculated current levels for IE, IC and IB in Table-2

Table-1

Theoretical Calculated Values

Transistor VB VC VE VCE IB IC IE
Type (volts) (volts) (volts) (volts) (μA) (mA) (mA)
2N3904

Table-2

Measured Values Calc from measured values

Transistor VB VC VE VCE IB IC
IE (mA)
Type (volts) (volts) (volts) (volts) (μA) (mA)
2N3904

Part 3: Collector feedback configuration

a) Construct the circuit of Figure-3 using 2N3904 transistor.

Figure-3

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 Electronic Devices and Circuits

Record the measured value of each resistor.

RBmeas = ___________
RCmeas = ___________

b) Using value of β determined in Part 1, calculate the theoretical values of IB, IC, VB, VC and
VCE and record in Table-3.

c) Measure VB, VC and VCE and record in Table-4. Also calculate currents IB and IC using
measured resistance values and record in Table-4.

Table-3

Theoretical Calculated Values

Transistor
VB VC VCE IB IC
Type

2N3904

Table-4

Measured Values Calc from measured values

Transistor VB VC VCE
IB (μA) IC (mA)
Type (volts) (volts) (volts)

2N3904

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 Electronic Devices and Circuits

Part 4: Collector Feedback Configuration (with RE)

a) Construct the circuit of Figure-4 using 2N3904 transistor.

Figure-4

Record the measured value of each resistor.

RBmeas = ___________
RCmeas = ___________
REmeas = ___________

b) Using value of β determined in Part 1 for both transistors, calculate the theoretical values
of IB, IC, IE, VB, VC and VCE and record in Table-5.

c) Measure VB, VC, VE and VCE and record in Table-6. Also calculate currents IB, IC and IE
using measured resistance values and record in Table-6.

National University of Computer & Emerging Sciences, Peshawar

 Electronic Devices and Circuits

Table-5

Theoretical Calculated Values

Transistor Type VB VC VCE IB IC

2N3904

Table-6

Measured Values Calc from measured values

Transistor VB VC VE VCE
IB (μA) IC (mA) IE (mA)
Type (volts) (volts) (volts) (volts)

2N3904

Signature: ______________ Date: ______________

Marks Awarded: ________________________

National University of Computer & Emerging Sciences, Peshawar