MP4501

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)

MP4501
Industrial Applications
High Power Switching Applications.
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.

· Package with heat sink isolated to lead (SIP 12 pin)

· High collector power dissipation (4 devices operation)
: PT = 5 W (Ta = 25°C)
· High collector current: IC (DC) = 3 A (max)
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
· Diode included for absorbing fly-back voltage.

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 120 V

Collector-emitter voltage VCEO 100 V
JEDEC ―
Emitter-base voltage VEBO 6 V
DC IC 3 JEITA ―
Collector current A
Pulse ICP 6 TOSHIBA 2-32B1A
Continuous base current IB 0.5 A Weight: 6.0 g (typ.)
Collector power dissipation
PC 3.0 W
(1 device operation)
Collector power Ta = 25°C 5.0
dissipation PT W
(4 devices operation) Tc = 25°C 25

Isolation voltage VIsol 1000 V

Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Array Configuration

2 3 4 9 10 11

5 8 12
1

6 7
R1 R2 R1 ≈ 4.5 kΩ R2 ≈ 300 Ω

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance of junction to

ambient ΣRth (j-a) 25 °C/W
(4 devices operation, Ta = 25°C)
Thermal resistance of junction to case
ΣRth (j-c) 5.0 °C/W
(4 devices operation, Tc = 25°C)
Maximum lead temperature for
soldering purposes TL 260 °C
(3.2 mm from case for 10 s)

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 120 V, IE = 0 A ― ― 10 µA

Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 µA
Emitter cut-off current IEBO VEB = 6 V, IC = 0 A 0.5 ― 2.5 mA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 120 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 100 ― ― V
hFE (1) VCE = 2 V, IC = 1.5 A 2000 ― 15000
DC current gain ―
hFE (2) VCE = 2 V, IC = 3 A 1000 ― ―
Collector-emitter VCE (sat) IC = 1.5 A, IB = 3 mA ― ― 1.5
Saturation voltage V
Base-emitter VBE (sat) IC = 1.5 A, IB = 3 mA ― ― 2.0
Transition frequency fT VCE = 2 V, IC = 0.5 A ― 60 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 30 ― pF

Turn-on time ton Output ― 0.3 ―

IB1
Input
20 Ω

20 µs IB2
Switching time Storage time tstg ― 2.0 ― µs
IB1

VCC = 30 V
IB2

Fall time tf ― 0.4 ―

IB1 = −IB2 = 3 mA, duty cycle ≤ 1%

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Maximum forward current IFM ― ― ― 3 A

Surge current IFSM t = 1 s, 1 shot ― ― 6 A
Forward voltage VF IF = 1 A, IB = 0 A ― 1.2 1.8 V
Reverse recovery time trr ― 1.0 ― µs
IF = 3 A, VBE = −3 V, dIF/dt = −50 A/µs
Reverse recovery charge Qrr ― 5 ― µC

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Flyback-Diode Rating and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Maximum forward current IFM ― ― ― 3 A

Reverse current IR VR = 120 V ― ― 0.4 µA
Reverse voltage VR IR = 100 µA 120 ― ― V
Forward voltage VF IF = 0.5 A ― ― 1.8 V

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IC – VCE IC – VBE
6 6
10 3 1 Common emitter

5 0.5 5 VCE = 2 V
(A)

(A)
0.3
4 4
IC

IC
Collector current

Collector current
0.2
3 3

2 IB = 0.15 mA 2

Common emitter −55

1 1 Tc = 100°C 25
Tc = 25°C

0
0 0
0 1 2 3 4 5 6 7 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE – IB
20000 2.4
Common emitter Common emitter
VCE = 2 V Tc = 25°C
(V)

10000 2.0
hFE

VCE

5000 Tc = 100°C IC = 6 A
1.6
DC current gain

5
Collector-emitter voltage

3000 25 4
1.2 3
−55
2
1000 1
0.8

0.1
500 0.5
0.4
300
0.05 0.1 0.3 1 3 10
0
Collector current IC (A) 0.1 0.3 1 3 10 30 100 300

Base current IB (mA)

VCE (sat) – IC VBE (sat) – IC

10 10
Common emitter
Collector-emitter saturation voltage

Common emitter
Base-emitter saturation voltage

IC/IB = 500
5 5 IC/IB = 500
VCE (sat) (V)

3
VBE (sat) (V)

Tc = −55°C

Tc = −55°C
1 1
100 25

25
0.5 100 0.5

0.3 0.3
0.1 0.3 1 3 10 0.1 0.3 1 3 10

Collector current IC (A) Collector current IC (A)

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rth – tw
300
Curves should be applied in thermal
(°C/W) limited area. (single nonrepetitive pulse) (4)
100 Below figure show thermal resistance per
1 unit versus pulse width.
rth

30
Transient thermal resistance

(3)
(2)
10
(1)

3 -No heat sink and attached on a circuit board-

(1) 1 device operation

1 (2) 2 devices operation

(3) 3 devices operation
(4) 4 devices operation Circuit board
0.3
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Safe Operating Area PT – Ta

8
(1) 1 device operation
(2) 2 devices operation
10
(W)

IC max (pulsed)* (3) 3 devices operation

100 µs*
5 (4) 4 devices operation
6
1 ms*
PT

Attached on a circuit board

3 10 ms* (4)
(A)

Total power dissipation

(3)

4 (2)
IC

1
Circuit board
Collector current

0.5
(1)
0.3
2

0.1

0
0.05 0 40 80 120 160 200
0.03 *: Single nonrepetitive pulse
Tc = 25°C Ambient temperature Ta (°C)
Curves must be derated linearly with VCEO max
increase in temperature.
0.01
0.3 1 3 10 30 100

Collector-emitter voltage VCE (V)

∆Tj – PT
160
(°C)

(1) (2) (3) (4)

Junction temperature increase ∆Tj

120

80

Circuit board
Attached on a circuit board
40 (1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
0
0 2 4 6 8 10

Total power dissipation PT (W)

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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