IGBT - Field Stop

600 V, 60 A

FGH60N60SFD
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com
welder and PFC applications where low conduction and switching
losses are essential.
C
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A
G
• High Input Impedance
• Fast Switching
E
• This Device is Pb−Free and is RoHS Compliant
E
Applications C
G
• Solar Inverter, UPS, Welder, PFC
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K
FGH60N60
SFD

$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SFD = Specific Device Code

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

February, 2020 − Rev. 2 FGH60N60SFD/D
 FGH60N60SFD

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Description Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V
Transient Gate−to−Emitter Voltage ±30
Collector Current TC = 25°C IC 120 A
Collector Current TC = 100°C 60 A
Pulsed Collector Current TC = 25°C ICM (Note 1) 180 A
Maximum Power Dissipation TC = 25°C PD 378 W
Maximum Power Dissipation TC = 100°C 151 W
Operating Junction Temperature TJ −55 to +150 °C
Storage Temperature Range Tstg −55 to +150 °C
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive test, Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction to Case RJC(IGBT) − 0.33 °C/W
Thermal Resistance, Junction to Case RJC(Diode) − 1.1 °C/W
Thermal Resistance, Junction to Ambient RJA − 40 °C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60N60SFDTU FGH60N60SFD TO−247 Tube N/A N/A 30

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V
Temperature Coefficient of Breakdown BVCES/TJ VGE = 0 V, IC = 250 A − 0.4 − V/°C
Voltage

Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A

G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICs
G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 5.0 6.5 V
Collector to Emitter Saturation Voltage VCE(sat) IC = 60 A, VGE = 15 V − 2.3 2.9 V
IC = 60 A, VGE = 15 V, TC = 125°C − 2.5 − V

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 FGH60N60SFD

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter Symbol Test Conditions Min Typ Max Unit

DYNAMIC CHARACTERISTICS
Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz − 2820 − pF
Output Capacitance Coes − 350 − pF
Reverse Transfer Capacitance Cres − 140 − pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VCC = 400 V, IC = 60 A, − 22 − ns
RG = 5  VGE = 15 V,
Rise Time tr Inductive Load, TC = 25°C − 42 − ns
Turn−Off Delay Time td(off) − 134 − ns
Fall Time tf − 31 62 ns
Turn−On Switching Loss Eon − 1.79 − mJ
Turn−Off Switching Loss Eoff − 0.67 − mJ
Total Switching Loss Ets 2.46 − mJ
Turn−On Delay Time td(on) VCC = 400 V, IC = 60 A, − 22 − ns
RG = 5  VGE = 15 V,
Rise Time tr Inductive Load, TC = 125°C − 44 − ns
Turn−Off Delay Time td(off) − 144 − ns
Fall Time tf − 43 − ns
Turn−On Switching Loss Eon − 1.88 − mJ
Turn−Off Switching Loss Eoff − 1.0 − mJ
Total Switching Loss Ets − 2.88 − mJ
Total Gate Charge Qg VCE = 400 V, IC = 60 A, VGE = 15 V − 198 − nC
Gate to Emitter Charge Qge − 22 − nC
Gate to Collector Charge Qgc − 106 − nC

ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
VFM Diode Forward Voltage IF = 30 A TC = 25°C − 2.0 2.6 V
TC = 125°C − 1.8 −
trr Diode Reverse Recovery Time IF = 30 A, diF/dt = 200 A/s TC = 25°C − 47 − ns
TC = 125°C − 179 −
Qrr Diode Reverse Recovery Charge TC = 25°C − 83 − nC
TC = 125°C − 567 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH60N60SFD

TYPICAL PERFORMANCE CHARACTERISTICS

180 180
TC = 25°C 20 V TC = 125°C 20 V 15 V
15 V
150 150
12 V
Collector Current, IC [A]

Collector Current, IC [A]

12 V 10 V
120 10 V 120

90 90

60 60 VGE = 8 V
VGE = 8 V
30 30

0 0
0 2 4 6 8 0 2 4 6 8
Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

180 180
Common Emitter Common Emitter
VGE = 15 V VCE = 20 V
150 TC = 25°C 150

Collector Current, IC [A]

TC = 25°C
Collector Current, IC [A]

TC = 125°C TC = 125°C
120 120

90 90

60 60

30 30

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V] Gate−Emitter Voltage, VGE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
4.0 20
Common Emitter Common Emitter
Collector−Emitter Voltage, VCE [V]

VGE = 15 V TC = −40°C
Collector−Emitter Voltage, VCE [V]

3.5
16
120 A
3.0
12
2.5
60 A 8
2.0
120 A
IC = 30 A 4
1.5 60 A
IC = 30 A
1.0 0
25 50 75 100 125 0 4 8 12 16 20
Collector−Emitter Case Temperature, TC [°C] Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. Case Temperature Figure 6. Saturation Voltage vs VGE
at Variant Current Level

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 FGH60N60SFD

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

20 20
Common Emitter Common Emitter
TC = 25°C TC = 125°C

Collector−Emitter Voltage, VCE [V]

Collector−Emitter Voltage, VCE [V]

16 16

12 12

8 8
120 A
60 A 120 A
4 4
60 A
IC = 30 A
IC = 30 A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate−Emitter Voltage, VGE [V] Gate−Emitter Voltage, VGE [V]
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

6000 15
Common Emitter Common Emitter
VGE = 0 V, f = 1 MHz TC = 25°C

Gate−Emitter Voltage, VGE [V]

5000 TC = 25°C 12
300 V
Cies
Capacitance [pF]

4000 VCC = 100 V

9
200 V
3000
6
Coes
2000
3
1000
Cres
0
1 10 30 0 50 100 150 200
Collector−Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

500 300
10 s
100
100
100 s
Collector Current, IC [A]

Collector Current, IC [A]

10 1 ms

10 ms
1 10
DC
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase Safe Operating Area
in temperature. VGE = 15 V, TC = 125°C
0.01 1
1 10 100 1000 1 10 100 1000
Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics Figure 12. Turn−Off Switching SOA Characteristics

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 FGH60N60SFD

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

300 6000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
100 TC = 25°C
1000
Switching Time [ns]

TC = 125°C

Switching Time [ns]

tr td(off)

100
Common Emitter tf
td(on) VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°C
TC = 125°C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [] Gate Resistance, RG []
Figure 14. Turn−Off Characteristics
Figure 13. Turn−On Characteristics vs. Gate Resistance
vs. Gate Resistance

Common Emitter
VGE = 15 V, RG = 5 
500 TC = 25°C
Common Emitter TC = 125°C
VGE = 15 V, RG = 5 
Switching Time [ns]

TC = 25°C
TC = 125°C td(off)
Switching Time [ns]

tr
100 100

tf
td(on)

10 10
2 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector Current, IC [A] Collector Current, IC [A]
Figure 15. Turn−On Characteristics Figure 16. Turn−Off Characteristics
vs. Collector Current vs. Collector Current

20
10 30
Common Emitter Common Emitter
VCC = 400 V, VGE=  V VGE = 15 V, RG = 5 
IC = 60 A 10 TC = 25°C
TC = 25°C TC = 125°C Eon
Switching Loss [mJ]

Switching Loss [mJ]

TC = 125°C

Eon

1 Eoff

1
Eoff

0.5 0.1
0 10 20 30 40 50 0 20 40 60 80 100 120
Gate Resistance, RG [] Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current

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 FGH60N60SFD

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

200 500

100 100 TC = 125°C

Reverse Current, IR [A]

Forward Current, IF [A]

TJ = 125°C TJ = 25°C 10

TC = 75°C
10 1
TJ = 75°C

0.1
TC = 25°C TC = 25°C
TC = 125°C
1 0.01
0 1 2 3 4 0 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]
Figure 19. Forward Characteristics Figure 20. Reverse Current

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

200 A/s
80 200 A/s 50

di/dt = 100 A/s

60 diF/dt = 100 A/s 40

TC = 25°C
40 30
5 20 40 60 5 20 40 60
Forward Current, IF [A] Forward Current, IF [A]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time

1
Thermal Response [Zjc]

0.5
0.1
0.2
0.1
0.05
0.02
0.01 0.01
Single Pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zjc + TC
1E−3
1E−5 1E−4 1E−3 0.01 0.1 1
Rectangular Pulse Duration [sec]
Figure 23. Transient Thermal Impedance of IGBT

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK
ISSUE A
DATE 31 JAN 2019
A P1
A E
A2
P D2

Q
E2
S
D1
D B E1

2
1 2 3

L1
A1

b4 L

c
(3X) b
(2X) b2 0.25 M B A M
MILLIMETERS
(2X) e DIM
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
GENERIC D 20.32 20.57 20.82
MARKING DIAGRAM*
D1 13.08 ~ ~
AYWWZZ D2 0.51 0.93 1.35
XXXXXXX E 15.37 15.62 15.87
XXXXXXX E1 12.81 ~ ~
E2 4.96 5.08 5.20
XXXX = Specific Device Code e ~ 5.56 ~
A = Assembly Location
Y = Year L 15.75 16.00 16.25
WW = Work Week L1 3.69 3.81 3.93
ZZ = Assembly Lot Code
P 3.51 3.58 3.65
*This information is generic. Please refer to
device data sheet for actual part marking. P1 6.60 6.80 7.00
Pb−Free indicator, “G” or microdot “G”, may Q 5.34 5.46 5.58
or may not be present. Some products may
not follow the Generic Marking. S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13851G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD SHORT LEAD PAGE 1 OF 1

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