2N4360

CASE 29-02, STYLE 7

TO-92 (TO-226AA)

JFET
MAXIMUM RATINGS LOW-FREQUENCY/LOW-NOISE
Rating Symbol Value Unit P-CHANNEL — DEPLETION
Drain-Source Voltage vDs 20 Vdc
Drain-Gate Voltage Vdg 20 Vdc
Gate-Source Voltage vgs 20 Vdc
Total Device Dissipation @ T^ = 25°C Pd 310 mW
Derate above 25°C 2.82 mW/°C
Storage Temperature Range T stg -55 to +125 °C

Refer to 2N5460 for graphs.

ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.!

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage V (BR)GSS 20 — Vdc
dG = 10 M)
Gate Reverse Current 'GSS — 10 nA
(V G S =15)
Gate Source Cutoff Voltage v GS(off) 0.7 10.0 Vdc
(V DS = -10 V, l
D = 1.0 fiA)

Gate Source Voltage vqs 0.4 9.0 Vdc

D = o.3mA, y D s = -iov)
<i

ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current !
DSS 3.0 30 mA
(v DS = -iov, v G s = ov)
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Resistance rds — 700 Ohms
(ID = 0'Vqs = °' f = 1-0 kHz)

Forward Transfer Admittance lYfsl 2000 8000 /xmhos

(VqS = - 10 V, Vqs = V, f = I.O kHz)

Output Admittance IVosI

— 100 /xmhos
(V DS = - 10 V, V GS = V, f = 1.0 kHz)

Common Source Forward Transconductance Re(y fs ) 1500 — /xmhos

(VDS = -10 V, Vqs = V, f = 1.0 MHz)

Input Capacitance C|ss — 20 PF

(V D s = -10 V, f = 1.0 MHz)
Reverse Transfer Capacitance C r ss — 5.0 PF
(VDS = -10 V, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure NF — 5.0 dB
(Vqs = - 10 V, Iq = 10 mA, Rq = 1.0 mil, f = 100 Hz)

6-37