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2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m12 A
Drain Current (pulse) Note1
ID(pulse) m30 A
Total Power Dissipation (TC = 25°C) PT 23 W
Total Power Dissipation (TA = 25°C) PT 1.0 W (TO-252)
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note2
Single Avalanche Current IAS –12 A
Note2
Single Avalanche Energy EAS 14.4 mJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 A
Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 A
Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V
Fall Time tf V RG = 0 10 ns
D.U.T.
L D.U.T.
RG = 25
RL V GS()
VGS 90%
50 V DD 10% V GS
PG. Wave Form 0
RG
VGS = 20 0 V PG. V DD
VDS()
BV DSS 90% 90%
IAS VDS
V GS()
V DS VDS 10% 10%
0 Wave Form 0
ID
VDD td(on) tr td(off) t
f
ton toff
= 1 s
Starting Tch Duty Cycle 1%
D.U.T.
IG = 2 mA RL
PG. 50 V DD
100 25
60 15
40 10
20 5
0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
0
TC - Case Temperature - ˚C TC - Case Temperature - ˚C
PW
ID(pulse) =
10
s
10
0 s
ID - Drain Current - A
–10 d ID(DC) 1
ite m
s
m Po
Li Li w e 10
n) m rD m
S(
o i te
d iss
s
D ip D
R ati
on
C
–1
TC = 25˚C
Single Pulse
–0.1
–0.1 –1 –10 –100
10
Rth(ch-C) = 5.43˚C/W
0.1
Single Pulse
0.01
10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
–40
–10
I D - Drain Current - A
ID - Drain Current - A
10 150
TA = 150˚C
1 75˚C ID = –6 A
100
25˚C
50˚C
0.1 50
VDS = –10 V
0.01 Pulsed
0
–0.01 –0.1 –1 –10 –100 0 –5 –10 –15 –20
ID - Drain Current - A VGS - Gate to Source Voltage - V
300
Pulsed VDS = –10 V
ID = –1 mA
VGS(off) - Gate Cut-off Voltage - V
–3.0
VGS = –4.0 V
200 –4.5 V
–10 V
–2.0
100
–1.0
0 0
–0.1 –1 –10 –100 –50 0 50 100
150
ID - Drain Current - A
Tch - Channel Temperature - ˚C
150 –10 V –1 0V
100
–0.1
50
ID = –6 A
0 –0.01
150 0 –1.5
50 0 50 100 –0.5 –
tf
100 Coss 10 td(on)
Crss tr
10 1
–0.1 –1 –10 –100 –0.1 –1 –10 –100
VDD = –48 V
–30 V
100 –40 –12 V –8
–30 –6
10 –20 –4
–10 –2
VDS
1 0 0
0.1 1 10 100 0 2 4 6 8 10 12 14 16
IF - Drain Current - A QG - Gate Charge - nC
IAS –12 A
60
–1
40
VDD = –30
V RG = 25 20
–0.1 VGS = –20 0
10 0 V 100 1 10 m 25 50 75 100 125 150
m
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C
+0.2
1.5 0.1
+0.2
1.5 0.1
5.0 ±0.2 0.5 ±0.1 6.5 ±0.2 2.3 ±0.2
4 5.0 ±0.2
0.5 ±0.1
1.6 ±0.2
5.5 ±0.2
1.8TYP.
10.0 MAX.
5.5 ±0.2
13.7 MIN.
MIN.
1 2 3
1.0
1 2 3
7.0 MIN.
1.1 ±0.2
MIN.
2.0
0.7
0.9 0.8
1.1 ±0.2 MAX MAX
2.3 2.3
. .
0.1
+0.2 0.1
+0.2 0.8
0.5 0.5 1. Gate
2.3 2.3
2. Drain
1. Gate 3. Source
0.75
EQUIVALENT CIRCUIT
Drain
Body
Gate Diode
Gate
Protection Source
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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