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µαe = µα (T ) − eϕ (1) where L is the sample length. Figure 2 illustrates the diffu-
where the subscript α represents the spin orientation, that sion of μS as calculated from Equation (5). Near to the sample
is, α = ↑/↓. The first term of the right-hand side is the spin- sinh( x /λsf )
boundary (x → ±L/2), the ratio ≈ ± 1 , and the
dependent chemical potential and the second term is the cosh(L/2λsf )
energy caused by the applied electric field. The spin-dependent ∆T
spin accumulation µS ≈ ± e(S↑ − S↓ )λsf . At the position far
chemical potential at a finite temperature T can be described as L
sinh( x /λsf )
π 2 K T 2 away from the boundary (|x| ≪ L/2), → 0 and the
cosh(L/2λsf )
µα (T ) ≈ µ 0α 1 − B (2) value of μS is negligible, that is, μ↑ = μ↓ , and there is no spin
12 µ 0α
accumulation inside the sample.
where μ0α = εF,α − MαB + Eα, εF,α is the Fermi energy at
0 K, − MαB is the Zeeman Energy, and Eα is the exchange split- 3. Spin Accumulation and Spin
ting energy between two spin channels. The Zeeman energy Continuity Equation
and the exchange energy shifted the sub-energy bands for spin-
up and -down, and the thermal equilibrium adjusted the spin- As indicated in Equation (5), the spin chemical potential μS ≠ 0
dependent Fermi energy to have the same chemical potential near the boundary/interface of FMs, that is, there will be spin
for both spins. A temperature gradient will drive the system accumulation under a linear temperature gradient. In this sec-
out of equilibrium and lead to a spatially dependent chemical tion, we will focus on the physical mechanism and the effect
potential. The understanding of the diffusion mechanism of of this spin accumulation. Considering the spin-flip scattering
the chemical potential is the key point to reveal the transport which is a random scattering process due to the spin-orbit
mechanism of SSE. In numerous articles, the standard spin dif- interaction, the number density of electrons at the Fermi level
fusion equation is used[9,19,20] in the system at any time can be described as
µ↑ − µ↓ n↑ = n↑0 e −t /τ↑↓ , and n↓ = n↓0 e −t /τ↓↑ (6)
∇ 2 (µ↑ − µ↓ ) = + (S↑ − S↓ )∇ 2T (3)
λsf2 where n↑0 and n↓0 are the number density at the Fermi Level
at t = 0 for spin-up and-down, respectively. At equilibrium, the
where λsf is the spin diffusion length of about several tens of
number of electrons with different spin orientations in the
nanometer for most FM metals and is assumed to be inde-
system remains constant, that is, the number of electrons from
pendent of the temperature. λsf = (Dτsf )1/2, where D is the
spin-up to spin-down in unit time is equal to the number of
diffusion coefficient of electrons and τsf is the spin-flip relaxa-
σ D + σ ↑D↓ [19] electrons from spin-down to spin-up. The first derivative of the
tion time. In FMs, D = (1 − β ) D↑ + β D↓ = ↓ ↑ and number of electrons in different spin states should be the same
1 1 1 σ
= + according to Matthiessen’s rule for independent dn↑ dn↓
τ sf τ ↑↓ τ ↓↑ = (7)
scattering statistics, where D↑(D↓) and τ↑↓(τ↓↑) are the diffu- dt dt
sion coefficients for spin-up (down) and the spin-flip relaxation
This leads to
times, respectively. The second term of right-hand side of the
equation is zero under a linear temperature gradient, leading to dn↑ n e −t /τ↑↓ n
the spin diffusion equation of = − ↑0 = − ↑ (8a)
dt τ ↑↓ τ ↑↓
µS ( x )
∇ 2 µS ( x ) = (4) dn↓ −n↓0 e −t /τ↓↑ n
λsf2 = = − ↓ (8b)
dt τ ↓↑ τ ↓↑
where μS μ↑ − μ↓ is the spin accumulation. The general solu-
tion to Equation (4) is The spin-flip relaxation time follows the relationship of
∆T sinh ( x /λsf ) τ ↑↓ n↑
µS ( x ) = e(S↑ − S↓ )λsf (5) = (8c)
L cosh (L/2λsf ) τ ↓↑ n↓
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Let us look at the process of spin-flip scattering. The spin- where ds is the area element on the surface of the cylinder. The
flip relaxation time does not depend on the scattering from continuity equation of spin current requires that the flux of the
phonon. Spin-flip occurs only during the exchange of angular spin current js is equal to the spin accumulation rate at any
momentum between different spins. As a result, the spin-flip position in the system, that is,
relaxation times hardly depend on temperature. In addition, the
nµ s 1 1
probability of spin-flip scattering is proportional to the number ∫∫∫ 2µ
τ
+
τ
∫∫
dV = js ⋅ ds (13c)
0 ↑↓ ↓↑
of electrons with opposite spin. That means, the spin diffusion
time is inversely proportional to the number of electrons with Equation (13c) is the continuity equation of spins in FMs,
opposite spin. Therefore, the relationship between the different which relates the spin accumulation μs with the spin current js.
spin-flip relaxation times for the spin-up and -down can be According to Equation (5), the spin accumulation μs in an FM is
described as: negligible everywhere inside the system. Then the spin accumu-
nµ 1 1
1 lation ∫∫∫ s + ∫∫ js ⋅ d s = 0, which indicates that
dV =
2µ 0 τ ↑↓ τ ↓↑
τ ↑↓ n↓ n↑
= = (8d) the divergence
of the spin current is zero inside the system,
τ ↓↑ 1 n↓ that is, ∇ ⋅ js = 0 represented by cylinder 1 in Figure 2.
n↑ At the positions near to the boundary where spin accumula-
This is the physical nature for this relationship. tion exists, the same method can be used to consider the cylinder
Considering a small disturbance of the spin polarization, 2 as shown in Figure 2. One can find that the flux of the spin
that is, n↑ changes to n↑ + Δn↑, then the number density of the current will no longer be zero. The vanishing or increasing spin
electrons with spin-down should be changed to n↓ − Δn↑ due density is due to the unbalanced spin reversal at the boundary.
to the conservation of the number of particles. This changes
Equation (8a) to
4. Concept and Definition of SSE Coefficient
dn↑ n + ∆n↑ n↓ − ∆n↑
=− ↑ − − (9)
dt τ ↑↓ τ ↓↑ Here, we clarify the definition of SSE coefficient Ss, which has
different expressions in numerous literatures.[13,21] In this sec-
On the right-hand side, the first term is the number of the tion, we discuss the spin-dependent electron transport in FMs
electrons changing from spin ↑ to ↓ in unit time, and vice versa from the basic electronic transport theory such as Boltzmann
for the second term. By using n↑ = n↓ from Equation (8c), (9) equation and the relaxation time approximation. We then derive
τ ↑↓ τ ↓↑
can be rewritten as the SSE coefficient under the linear response theory.
In solid state materials, electrons are scattered by phonons,
dn↑ 1 1 ∆n↑ electrons, or lattice defects, changing their wave vector k to k′. If
= −∆n↑ + =− (10) the system is macroscopically homogeneous and the scattering
dt τ ↑↓ τ ↓↑ τ sf
is weak, the motion of the electron can be described by the
In metals, the total chemical potential of the system is the semi-classical Boltzmann equation with Fermi-Dirac distribu-
average of all electrons. We therefore have tion function f(k, r, t), where f(k, r, t) is the probability that a par-
ticular state (k, r) is occupied at time t. When scattering occurs,
2∆n↑µ 0 ∆V 2∆n↑µ 0 the transport equation becomes df/dt = ∂f/∂t|coll , leading to
µ s = µ↑ − µ↓ = = (11)
(n↑ + n↓ ) ∆V n
df ∂ f dk
dr ∂ f
= + ∇k f ⋅ + ∇f ⋅ = |coll (14)
where μ0 is the chemical potential of a single electron at μs = 0, dt ∂t dt dt ∂t
and n the number density of electrons at the Fermi level, that The Fermi-Dirac distribution function is
is, n = n↑ + n↓ . Substituting Equation (11) into Equation (10),
1
one obtains f (E ) = (15)
e (E −µ )/kBT + 1
dn↑ 1 1 nµ s 1 1 where E is the energy of the electrons. Denoting f0 as the distri-
= − ∆n↑ + =− + (12) bution function of the equilibrium state, we have
dt τ ↑↓ τ ↓↑ 2µ 0 τ ↑↓ τ ↓↑
∂ f0
As shown in Figure 2, a small cylinder along the tempera- = 0 (16)
∂t
ture gradient at any point inside the FM metal has the spin
accumulation of In the transport calculation, the relaxation time τ approxi-
mation is generally used to deal with the collision process.
1 Considering that the distribution function f has an offset com-
dn↑ nµ s 1
∫∫∫ − dV = ∫∫∫ 2µ 0
τ
↑↓
+
τ
dV (13a) pared with f0 and this offset decays exponentially with time, the
dt ↓↑ change in the distribution function due to collisions mentioned
in Equation (14) can be described as
The spin current flux passing through the cylinder is
∂f f − f0
|coll = −
∫∫ js ⋅ ds (13b)
Φ= ∂t τ
(17)
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According to the linear response theory, the distribution When we consider the contribution of spin-flip, Equation (21)
function f can be written as f = f0 + Δf, where Δf is the offset will change to
from the equilibrium distribution function f0. For the electrons
of spin ↑ and spin ↓, the distribution function will be f = f0 + f↑ f↑ f ∂f E − µ↑
−
τ ↓τ ↓↑ + τ ↓τ ↑↓ + τ ↑↓τ ↓↑
≡ − ↑ = v 0 −∇µ↑e + (−∇T )
and f = f0 + f↓, respectively. By substituting f and Equation (16) τ ↑′ ∂E T (22a)
τ↑
into Equations (14) and (17), one has τ ↑τ ↓↑ + τ ↓τ ↑↓ + τ ↑↓τ ↓↑
dk dr f f↓ f ∂f E − µ↓
∇k f 0 ⋅ + ∇f 0 ⋅ = − ↑ (18a) − ≡ − ↓ = v 0 −∇µ↓e + (−∇T )
dt dt τ↑ τ ↑τ ↓↑ + τ ↑τ ↑↓ + τ ↑↓τ ↓↑ τ ↓′ ∂E T (22b)
τ↓
τ τ + τ τ
↑ ↓↑ ↓ ↑↓ ↑↓ ↓↑ + τ τ
dk dr f
∇k f 0 ⋅ + ∇f 0 ⋅ = − ↓ (18b)
dt dt τ↓ With spin-flip, the relaxation time changes from
τ τ + τ τ + τ τ
τλ to τλ′. Since τ ↑′ = τ ↑ ↓ ↓↑ ↓ ↑↓ ↑↓ ↓↑ ≈ τ ↑,
where τ↑ and τ↓ are the relaxation time of electron scattering τ ↑τ ↓↑ + τ ↓τ ↑↓ + τ ↑↓τ ↓↑
for spin-up and -down, respectively. Consider the spin-flip τ τ + τ τ + τ τ
τ ↓′ = τ ↓ ↑ ↓↑ ↑ ↑↓ ↑↓ ↓↑ ≈ τ ↓ due to τ↑↓ ≫ τ↑ and τ↓↑ ≫ τ↓,
events, the flip of spin-up electrons will contribute to the spin- τ ↑τ ↓↑ + τ ↓τ ↑↓ + τ ↑↓τ ↓↑
down electrons, and vice versa. Therefore, Equations (18a) and the spin-dependent transport equation in the gradient tempera-
(18b) change to the following: ture can still be calculated from the distribution function fα as
∇µ e 1
dk dr f f −f Jα = K α0 α − K α1 (−∇T ) (23)
∇k f 0 ⋅ + ∇f 0 ⋅ = − ↑ − ↑ ↓ (19a) e eT
dt dt τ↑ τ ↑↓
1 ∂ f0
dk
dr f f −f where K αn = e 2 ∫ 4π −
∂E
τ α E (k ) v 2 (k )[E (k ) − µ ]n dk .
∇k f 0 ⋅ + ∇f 0 ⋅ = − ↓ − ↓ ↑ (19b)
dt dt τ↓ τ ↓↑
Then the total charge current and spin current of the system
It is well known
that ℏk is the crystal momentum of the elec- are
dk 1
trons and = F, where F = − eε is the electric field force of
dt J c = J↑ + J↓ ≈ − (σ ↑∇µ↑e /e + σ ↓∇µ↓e /e + σ ↑S↑∇T + σ ↓S↓∇T ) (24a)
the electron in the external electric field ε. The first term on the
left-hand side of Equations (19a) and (19b) can be written as J s = J↑ − J↓ ≈ − (σ ↑∇µ↑e /e − σ ↓∇µ↓e /e + σ ↑S↑∇T − σ ↓S↓∇T ) (24b)
dk 1 1 ∂ f0 ∂f In Equations (24a) and (24b), the first two terms of the right-
∇k f 0 ⋅ = F ⋅ ∇k f 0 = F ⋅ ∇kE = − eε v 0 (20a) hand side are the contributions of the inhomogeneous distri-
dt ∂E ∂E
bution of spin-dependent chemical potential and the last two
where v is the velocity of the electrons. In a non-uniform terms are the contributions from the temperature gradient.
temperature field, both the distribution function f0 and the According to the previous conclusion, at equilibrium state, the
temperature T depend on the position. By using Equation (15) spin accumulation μs and Jc of open circuit should be zero.
and calculating the second term on the left-hand side of Defining ∇ µ↑e = ∇ µ↓e = ∇µ,e we have
Equation (19), the second term can be written as
−(σ ↑ + σ ↓ )∇µ e / e = (σ ↑S↑ + σ ↓S↓ ) ∇T (25)
dr ∂ f ∂f ∂ f E − µ ∂ f 0
∇f 0 ⋅ = 0 ∇µ + 0 ∇T ⋅ v = v 0 ∇µ + ∇T (20b)
dt ∂E ∂T ∂E T ∂E By using the definition of Seebeck coefficient S0, one can
obtain
Substituting Equations (20a) and (20b) into Equation (19), we
can obtain ∆V dV dT ∇µ e dT σ ↑S↑ + σ ↓S↓
S0 ≡ = / =− / = (26)
∆T lim dx dx Jc =0 e dx σ↑ +σ↓
f↑ f↑ − f↓ ∂ f ∇µ E − µ↑
− − = v 0 −e ε + ↑ + (−∇T )
τ↑ τ ↑↓ ∂E e T where S0 is the Seebeck coefficient and V is the Seebeck voltage
∂ f0 E − µ (21a) caused by the temperature gradient. The charge current Jc
=v −∇µ↑e + ↑
(−∇T )
∂E T caused by the temperature gradient as present in Equation (24a)
can be written as
f↓ f↓ − f↑ ∂ f ∇µ E − µ↓ J c = J↑ + J↓ = − σ ∇µ e/e − σ S0 ∇T (27)
− − = v 0 −e ε + ↓ + (−∇T )
τ↓ τ ↓↑ ∂E e T
∂ f0 E − µ↓ (21b)
=v −∇µ↓ +
e
(−∇T ) where σ = σ↑ + σ↓. Similarly, the spin current in Equation (24b)
∂E T should be rewritten as
∇µ λ ∇µ e
where ε + = ∇µ λe ≡ ε eff is the effective electrical field. J s = J↑ − J↓ = − (σ ↑ − σ ↓ ) − (σ ↑S↑ − σ ↓S↓ ) ∇T (28)
e e
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Here, the key point is the definition of SSE coefficient Ss. by a superconductor that connects the top and bottom layers.
There are two possible ways: The first one is to use a defini- With a vertical temperature gradient, the voltages along the FM
tion similar to charge current conductivity σ, which defines are measured and denoted as U0 and U1, respectively. The meas-
σs σ↑ − σ↓, then the SSE coefficient should be urement results of U1 include the contributions from the spin
current from the temperature gradient and the anomalous
σ ↑S↑ − σ ↓S↓ Nernst effect (ANE) of the FM. The latter can be removed using
Ss′ = (29)
σ↑ −σ↓ U0 − U1 since U1 only measures ANE of the FM. Therefore,
σ −σ↓ this experiment can determine the spin current caused only by
In the second method, a polarization parameter P = ↑ σ S − σ ↓S↓
σ↑ +σ↓ the temperature gradient, that is, J s = −(σ ↑ − σ ↓ ) ↑ ↑ ∆T
is introduced to clarify the difference between the σs and σ, by σ↑ −σ↓
which the spin current can be rewritten as σ S − σ ↓S↓
according to Equation (29) or J s = −σ ↑ ↑ ∆T according
σ↑ +σ↓
σ ↑S↑ − σ ↓S↓
J s = − σ (P∇µ e /e ) − σ ∇T (30)
to Equation (31). In Figure 3, we plotted (σ↑S↑ − σ↓S↓) (green
σ↑ +σ↓ σ ↑S↑ − σ ↓S↓
curve in Figure 3b), Ss′ = or Equation (29) (pink
σ↑ −σ↓
where P∇μe/e can be regarded as the equivalent electric field σ ↑S↑ − σ ↓S↓
curve), and Ss = or Equation (31) (blue curve) as
driving the spin current. Then the SSE coefficient is σ↑ −σ↓
σ ↑S↑ − σ ↓S↓ function of σ↑/σ↓. The SSE coefficient represents the ability
Ss =
σ ↑ + σ ↓ (31) of a material generating spin current in the presence of a tem-
perature gradient, which is closely related to (σ↑S↑ − σ↓S↓).
Comparing the expressions of Equations (29) and (31), the For most FMs, the conductivity σ↑ ≫ σ↓; in this case, the two
two only slightly differs in denominators. Next, we discuss expressions of SSE coefficient are not much different as seen
which expression is the better one for representing the ability from Figure 3b. However, there are a few metals with mark-
to generate spin currents from the temperature gradient. edly different electron structure, the conductivity σ↑ and σ↓ are
Consider an FM under a linear temperature gradient, as almost equal, and σ↑ < σ↓ is also possible such as in the case
shown in Figure 1; the metal is in an open circuit state and the of Fe. Clearly Equation (29) is inappropriate since it diverges
charge current in Equation (27) should be zero. Substituting
Equation (27) into (28), the spin current can be calculated as at σ↑ ≈ σ↓ and shows negative values at σ↑ < σ↓. Therefore
σ S − σ ↓S↓
Ss = ↑ ↑ is the better definition for the SSE coefficient.
2σ ↑σ ↓ σ↑ +σ↓
Js = − (S↑ − S↓ ) ∆T (32) Our proposed experiment will be an ideal method to confirm
σ↑ +σ↓
using Fe as the FM.
The measurement of spin current is generally realized by
depositing an NM with large spin Hall angle (such as Pt) on
the FM sample and measuring the inverse spin Hall voltage in
NM caused by the injected spin current from the FM. However,
5. Conclusions
it is rather difficult to measure the spin current purely from a We have investigated the SSE and the transport properties of
temperature gradient since there is built-in internal field along FMs under a linear temperature gradient. Based on the semi-
the temperature gradient that drives additional spin current as classical Boltzmann equation and the relaxation time approxi-
shown in Equation (28). This internal field ∇µ can be removed
e
mation, the relationship among the spin relaxation time, spin
e
Figure 3. a) The proposed experimental scheme to measure the spin current only caused by the temperature gradient. The two ends of an FM along
the temperature gradient are shorted by a superconductor, which eliminates the spin current due to the built-in electric field. The ANE can be directly
measured in a single FM (the bottom panel) which can be subtracted from U0. b) The different-defined SSE coefficients as a function of the ratio of
σ↑: σ↓, calculated from Equation (29) (pink lines), Equation (31) (blue line), and from (σ↑S↑ − σ↓S↓) (green line).
Adv. Funct. Mater. 2020, 30, 2004024 2004024 (5 of 6) © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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