J2

J1

J3

Phase Controlled Half Wave Rectification

iL v in R v
L SCR

v in RL

av

v 2

cos

I av

vm 2 R

1
L

cos

av

vm 1 RL

cos

TRIAC

TRIAC, from Triode for Alternating Current, is an electronic component which can conduct current in either direction when it is triggered (turned on), and is formally called a bidirectional triode thyristor or bilateral triode thyristor. MT2 MT2

MT1

MT1

A TRIAC is approximately equivalent to two complementary SCRs (joined in inverse parallel (paralleled but with the polarity reversed) and with their gates connected together. It can be triggered by either a positive or a negative voltage being applied to its gate electrode (with respect to MT1. Once triggered, the device continues to conduct until the current through it drops below a certain threshold value, the holding current, such as at the end of a half-cycle of alternating current (AC) mains power.

Equivalent circuit

APPLICATIONS
TRIAC is a very convenient switch for AC circuits, allowing the control of very large power flows with milliampere-scale control currents. In addition, applying a trigger pulse at a controllable point in an AC cycle allows one to control the percentage of current that flows through the TRIAC to the load (phase control).

STATC CHARACTERISTIC CURVE FOR TRIAC

GTO (gate-turn-off) SCR

Gate turn-off thyristor (GTO) is a special type of thyristor, a highpower semiconductor device. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their third lead, the GATE lead.

symbol

structure

OPERATION OF GTO-SCR
Normal SCR are not fully controllable switches (a "fully controllable switch" can be turned on and off at will). SCR can only be turned ON and cannot be turned OFF. SCR are switched ON by a gate signal, but even after the gate signal is removed, the SCR remains in the ON-state until any turn-off condition occurs (which can be the application of a reverse voltage to the terminals, or when the current flowing through (forward current) falls below a certain threshold value known as the "holding current"). Thus, a SCR behaves like a normal semiconductor diode after it is turned on .

OPERATION OF GTO-SCR
The GTO can be turned-on by a gate signal, and can also be turned-off by a gate signal of negative polarity. Turn on is accomplished by a "positive current" pulse between the gate and cathode terminals. The turn on phenomenon in GTO is however, not as reliable as an SCR and small positive gate current must be maintained even after turn on to improve reliability. Turn off is accomplished by a "negative voltage" pulse between the gate and cathode terminals.

OPERATION OF GTO-SCR
GTO thyristors suffer from long switch off times, whereby after the forward current falls, there is a long tail time where residual current continues to flow until all remaining charge from the device is taken away. This restricts the maximum switching frequency to approx. 1 kHz. It may however be noted that the turn off time of a comparable SCR is ten times that of a GTO. Thus switching frequency of GTO is faster than an SCR.

FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR

The Field-Effect Transistor (FET) relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are sometimes called unipolar transistors to contrast their single-carrier-type operation with the dual-carrier-type operation of bipolar (junction transistors (BJT).

Types of field-effect transistors

The channel of a FET is doped to produce either an N-type semiconductor or a Ptype semiconductor. The drain and source may be doped of opposite type to the channel, in the case of depletion mode FETs, or doped of similar type to the channel as in enhancement mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate. Types of FETs are: The JFET (Junction Field-Effect Transistor) uses a reverse biased p-n junction to separate the gate from the body. The MOSFET (MetalOxideSemiconductor Field-Effect Transistor) utilizes an insulator (typically SiO2) between the gate and the body.

JFET Construction and symbol

N-Channel JFET Conduction

N-Channel JFET Conduction

The depletion layer is thicker when Vgs high Less current can flow from Drain to source The current flow from Drain to source can be controlled by controlling gate voltage.

N-Channel JFET Conduction

The depletion layer is thinner when Vgs = 0N More current can flow from Drain to source The current flow from Drain to source can be controlled by controlling gate voltage.

Assignment 1
State the advantages and disadvantages of SCR and TRIAC compared to magnetic contactors. Differentiate characteristics between FET and Bipolar Junction Transistor (BJT). Explain the structure, symbol, static characteristics and application of the following devices: Bidirectional diode (DIAC) Programmable Unijunction Transistor (UJT) Submission date : Before 30 Jan 2010 Opto-coupler Prepared by Lab Group Zener diode Assessments : Photo transistor Assignment report : 5 Mark Photo thyristor Interview : 5 Mark Photo diode Operational Amplifier