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RC 2016-17
Contents:
Power Devices - I
Constructional Features, Operating Principle,
1. Power diode, Characteristics and Specification
2. SCR,
3. Diac,
4. Triac,
5. SCS, Unit - IV
6. GTO, Part -1
7. Light activated SCR. Dr. Samarth Borker
Asst. Professor
For detailed explanation and understanding, refer: Dept. of E & TC
R. Boylestad, L. Nashelsky; Electronic Devices and Circuits, PHI. Goa College of Engineering
P. S. Bimbhra; Power Electronics – Khanna Publishers.
Mohd. Rasheed; Power Electronic Circuits, Devices and Applications; Pearson Education.
J.B Gupta; Electronic Devices and Circuits; S. K. Kataria& Sons. http://samarthborkar.simplesite.com/1
An introductory overview of power electronic devices
V=0
i=0
Power diodes are also similar to signal diodes but have a little
difference in its construction.
Reference : https://www.electrical4u.com/power-diodes/
In signal diodes the doping level of both P and N sides is same
and hence we get a PN junction, but in power diodes we have a
junction formed between a heavily doped P+ and a lightly
doped N– layer which is epitaxially grown on a heavily doped N+
layer. Hence the structure looks as shown in the figure
https://www.electrical4u.com/thyristor-silicon-controlled-rectifier-scr/
semiconductor device made of silicon. This device is the solid
state equivalent of thyratron and hence it is also referred to as
Thyristor or Silicon Controlled Rectifier (SCR)
thyristor or thyroid transistor. In fact, SCR(Silicon Controlled
Rectifier) is a trade name given to the thyristor by General
Electric Company.
Basically SCR is a three-terminal, four-layer
semiconductor device consisting of alternate layers of p-type
and n-type material. Hence it has three p-n junctions J1, J2 and
J3. The figure below shows an SCR with the layers p-n-p-n. The
device has terminals Anode(A), Cathode(K) and the Gate(G).
The Gate terminal(G) is attached to the p-layer nearer to the
Cathode(K) terminal.
In this mode, the SCR is reverse biased by In this state, the SCR behaves as a typical
connecting its anode terminal (A) to negative end and diode. In this reverse biased condition, only reverse
the cathode terminal (K) to the positive end of the saturation current flows through the device as in the
battery. This leads to the reverse biasing of the case of the reverse biased diode which is shown in the
junctions J1 and J3, which in turn prohibits the flow of characteristic curve by blue line. The device also exhibits
current through the device, in spite of the fact that the reverse breakdown phenomenon beyond a reverse
the junction J2 remains in forward biased condition. safe voltage limit just like a diode.
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Forward Blocking Mode of SCR Here also current cannot pass through the
thyristor except the tiny current flowing as saturation
current as shown by the blue curve in the
characteristics curve below.
3. Diac
It is a device which consists of four layers and
two terminals. The construction is almost same as that of
the transistor. But there are certain points which deviate
from the construction from the transistor. The
Diac is a device which has two differentiating points are-
electrodes. It is a member of the thyristor family.
It is mainly used in triggering of thyristor. The 1. There is no base terminal in the diac.
advantage of using this device is that it can be 2. The three regions have almost same level of doping.
turned on or off simply by reducing the voltage 3. It gives symmetrical switching characteristics for
level below its avalanche breakdown voltage. either polarity of voltages.
https://www.electrical4u.com/diac/
Dr. Samarth Borker 15
Operation of Diac
From the figure, we see that it has two p-type material and
three n-type materials. Also it does not have any gate terminal in it.
Application of Diac
https://www.electrical4u.com/triac/
Dr. Samarth Borker 18
Construction of Triac
The triac can be turned on by applying the gate voltage higher than break over voltage. However,
without making the voltage high, it can be turned on by applying the gate pulse of 35 micro seconds to turn it on.
When the voltage applied is less than the break over voltage, then generally we tend to use the gate triggering
approach to turn it on.
Disadvantages of Triac
Uses of Triac
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4. Silicon-Controlled Switch (SCS)
Silicon controlled switch (SCS),
like the SCR, is a unilateral, four layer three
junction P-N-P-N silicon device with four
electrodes namely cathode C, cathode gate
Gx, anode gate G2 and the anode A, as
shown in figure.
The SCS is a low power device
compared with the SCR. It handles currents
in milli amperes rather than amperes. SCS
differs from an SCR in the following
aspects. It has an additional gate the The basic structure and schematic symbol of
anode gate. It is physically smaller than SCS are shown in the figures. It may be fabricated by
SCR. It has smaller leakage and holding using either the grown junction technique or the planar
currents than SCR. It needs small triggering technique.
signals. It gives more uniform triggering
characteristics from sample to sample.
http://www.circuitstoday.com/scs-silicon-controlled-switch
On the other hand, during the conduction state GTO behaves just like a thyristor with a small ON state
voltage drop. The GTO has faster switching speed than the thyristor and has higher voltage and current ratings than
the power transistors. 27
Construction of a Gate Turn-Off Thyristor
The junction between the P+ anode and N base is called anode junction. A heavily doped P+ anode region is
required to obtain the higher efficiency anode junction so that a good turn ON properties is achieved. However, the
turn OFF capabilities are affected with such GTOs.
•AC drives
•DC drives or DC choppers
•AC stabilizing power supplies
•DC circuit breakers
•Induction heating
•And other low power applications
•Magnitude of latching, holding currents is more. The latching current of the GTO is several times more as
compared to conventional thyristors of the same rating.
•On state voltage drop and the associated loss is more.
•Due to multi-cathode structure of GTO, triggering gate current is higher than that required for normal SCR.
•Gate drive circuit losses are more. Its reverse voltage blocking capability is less than the forward voltage
blocking capability.
The prime design goal of GTO devices are to achieve fast turn off time and high current turn off capability
and to enhance the safe operating area during turn off. The GTO’s turn off occurs by removal of excess holes
in the cathode base region by reversing the current through the gate terminal. Compare to BJT the GTO has
the following advantages:
https://electronicscoach.com/light-activated-scr.html
Dr. Samarth Borker 34
Dr. Samarth Borker
Working of LASCR
The more the intensity of light, the more will be the current through the
LASCR. The internal architecture of LASCR consists of two transistors in
such a way that the collector of one transistor is connected to the base
of another transistor.
The light falling on the light activated SCR generates the electron from
the valence band, and these electrons will enter conduction band. The
electrons will move from collector of one region to base of another
region, and then the cascading effect can be seen.
The best thing about Light Activated SCR is that they do not turn off
even when the supply of external light is ceased. If you want to turn off
the SCR, then you need to reverse the properties of electrodes.
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Dr. Samarth Borker
Applications of the Light Activated SCR
1.Low Power Applications: The Light activated SCR are generally used for the application
which requires low power to operate. This is because power generated by SCR is low in
magnitude.
2.Motor Control: The Light Activated SCR finds applications in the working of Motor
Control.
3.Computer Applications: The components used in the computer system also require
LASCR for meeting power requirements.
4.Optical light Controls: The optical light control use the principle of photoconduction
for generating the control signals. Therefore, the LASCR finds extensive application in
Optical light control.
5.Solid State Relay: In solid state relays, two LASCR are connected in reverse parallel so
that they can generate power in both the half cycle of AC.
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Disclaimer
Although I have made every effort to ensure that the information in this presentation is correct,
However I do not assume and disclaim any liability to any party for any loss , damage or disruption caused
by errors or omissions, whether such errors or omissions result from negligence, accident, or any other
cause.
Images used may be subject to copyright. Rights belong to the original creators.
The information presented in this presentation is meant to supplement and not replace
professional guidance or training.
This information is presented solely for educational purpose and not for any business or
commercial gains. The author is not offering it as legal, or other professional services advice.
The questions posted are solely based on past question papers, I do not have ownership or control
over the nature and content of those questions. I am not responsible for any discrepancies concerning the
duplicity of content over those questions.
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Students Note:
Refer standard textbooks in the subject for the in-depth detailed understanding of the concept. If any errors
might have crept in inadvertently, kindly bring them to my notice. samarthgec@gmail.com
Power Devices - II
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https://www.youtube.com/watch?v=UL_Z-12-2vM
https://www.youtube.com/watch?v=U85qDpmouhc https://www.youtube.com/watch?v=-XXGTH_eSw8
https://www.youtube.com/watch?v=msNdus02DjY https://www.youtube.com/watch?v=ZW7-3z4mGos