Goa College of Engineering

Department of Electronics and Telecommunication Engineering

SE Sem III, Sub: Electronic Devices and Circuits, (RC 2019-20)

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Tutorial Sheet 3 – Week 4 – 30th Sept 2020

Problems: Last Date of submission: 7th Oct 2020.

Instruction: Assume appropriate missing data if any.

1. What is contact potential? Obtain the value of contact potential of an abrupt junction at room
temperature of intrinsic concentration ni = 1.5x1016/m3 with doping level of ND = NA=1021/m3

2. Consider a Ge diode with ND = NA and with impurity concentration of 8 x 1014 /cm3. Assume ni
= 2x1013/cm3. At room temperature of 300k, calculate the height of the potential barrier under
open circuit conditions. Assume Boltzmann’s constant k =8.61x10-5 eV/k & electron charge e =
1.6 x10-19 C

3. a) Find the magnitude of the hall voltage VH in an n-type Ge bar having majority carrier
concentration ND=107/cm3.
b) What happens to VH if an identical p-type Ge bar having NA = 1017/cm3 is used in part?

4. The Hall effect is used to determine the mobility of holes in a p-type Si bar. Assume the bar
resistivity is 300KΩ-cm, the magnetic field Bz = 0.1 wb/m2 and d = w = 6 mm. The measured
values of the current and Hall voltage are 10μA and 60mv resp. Find μp.

5. The resistivity of the P-region and N-region of a Ge diode are 6Ω-cm and 4Ω-cm resp. Calculate
the contact potential Vo and potential barrier energy Eo. Given that e = q = 1.6 x 10-19 C, ni =
2.5 x1013/cm3, μp = 1800 cm2/V-s, μn = 3800 cm2/V-s and VT = 0.026 V at 300K.

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Subject Teacher: Dr. Samarth Borkar, Dept of E&TC, Goa College of Engineering.