Goa College of Engineering

Department of Electronics and Telecommunication Engineering

SE Sem III, Sub: Electronic Devices and Circuits, (RC 2019-20 )

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Tutorial Sheet 1 – Week 2 –16th September 2020

Problems: Last Date of submission: 23rd Sept 2020.

Instruction: Assume appropriate missing data if any.

1. a )Find the conductivity of intrinsic semiconductor Ge at 300゜k.

b ) If donor type impurity is added to the extent of 1 impurity atom in 107 Ge atoms, find conductivity.
c ) If acceptor impurity is added to the extent of 1 impurity atom in 107 Ge atoms find the conductivity.
Given that ni at 300k is 2.5x1013/cm3, μn and μp in Ge are 3800 and 1800cm2/v-s respectively and the
number of Ge atoms/cm3 = 4.41x1022.

2. a) Find the conductivity of intrinsic silicon at 300゜k. It is given that ni at 300゜k in Si is 1.5x1010/cm3, the
mobilities of electrons and holes in Si are 1300 cm2/v-s and 500 cm2/v-s respectively and number of
si atoms/cm3 = 5x1022.
b) If donor type impurity is added to the extent of 1 impurity atom in 108 si atoms, find the conductivity.
c) If acceptor type impurity is added to the extent of 1 impurity atoms in 108 Si atoms, find the conductivity.

3. Find the conductivity of Ge at 300゜k. : a) Intrinsic condition at 300゜k.

b) with donor impurity of 1 part in 106
c) with acceptor impurity of 1 part in a 107.
d) when both the above impurities are present simultaneously.
Given that n for Ge at 300゜k is 2.5x1013/cm3. , μn and μp in Ge are 3800 and 1800cm2/v-s
respectively and the number of Ge atoms/cm3 = 4.41x1022.

4. The resistivity of p type Si specimen is 0.12Ωm. Find electron and hole concentration.

5. a) Prove that the resistivity of Intrinsic Ge at 300゜k is 45 Ω-cm.

b) If a donor type impurity is added to the extent of 1 atom per 109 Ge atoms, prove that the resistivity
drops to 32.4 Ω-cm.
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Subject Teacher: Dr. Samarth Borkar, Dept of E&TC, Goa College of Engineering.