Goa College of Engineering

Department of Electronics and Telecommunication Engineering

SE ETC Sem III, Sub: Electronic Devices and Circuits, (RC 2019-20)

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Tutorial Sheet 5 -Week 5 –7th Oct. 2020

Problems: Last Date of submission: 14th October 2020.

Instruction: Assume appropriate missing data if any.

1. Determine the space charge width and electric field in Si pn junction at 300k with doping concentration
of NA = 1016/cm3 and ND = 1015/cm3 for intrinsic concentration of ni = 1.5 x1010/cm3,
Given that ε= εoεr = 11.7 x 8.85 x x10-14. Also compare the space charge width when reverse bias of
5v is applied across the terminals. (Hint: Vbi+VR).

2. A silicon p-n junction is formed between n-type Si doped with ND = 1017 /cm-3 and p-type Si
NA = 1016/cm3.
(a) Sketch the energy band diagram. Label all axes and all important energy levels.
(b) Find nn0, np0, pp0 , and pn0. Sketch the carrier concentration (of both electrons and holes) as a
function of position.
(c) Calculate the built-in potential Vbi in eV.

3. A Si p-n junction has dopant concentrations ND = 2 × 10 16/cm3 cm and NA = 2 × 1016/cm3.

Calculate the built-in potential Vbi in eV and the total width of the depletion region W = x n0 + x p0 at zero
bias (that is, Va = 0) and under a reverse bias Va = −8V. Given that: ni = 1.5 ×10 10/cm3.

4. A diode at a temperature of 25゜C has VD = 0.7v at Is=10nA. The temperature is raised to 125゜C.
i) Calculate ID at 25゜C, ii) What is the effect of rise in temp on VD & Is. Calculate ID at 125゜C
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Subject Teacher: Dr. Samarth Borkar, Dept of E&TC, Goa College of Engineering.