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4932 Ao4932
4932 Ao4932
SRFET TM
OM
The AO4932 uses advanced trench technology to provide FET1(N-Channel) FET2(N-Channel)
excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V
make a compact and efficient switch and synchronous ID= 11A (VGS=10V) 8A (VGS=10V)
rectifier combination for use in DC-DC converters. A
RDS(ON) RDS(ON)
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further. < 12.5mΩ (VGS=10V) < 19mΩ (VGS=10V)
< 15mΩ (VGS=4.5V) < 23mΩ (VGS=4.5V)
.C
100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested
IC
SOIC-8
SRFETTM
T-
Top View Bottom View Soft Recovery MOSFET: D1 D2
Integrated Schottky Diode
Top View
D2 G2
D2 S2/D1
G1 S2/D1
S1 S2/D1 G1 G2
SE
S1 S2
Pin1
TA=25°C 2 2
PD W
Power Dissipation B TA=70°C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W
OM
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 1.65 2.1 V
ID(ON) On state drain current VGS=10V, VDS=5V 60 A
VGS=10V, ID=11A 10 12.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 15 18
VGS=4.5V, ID=9A 12 15 mΩ
.C
gFS Forward Transconductance VDS=5V, ID=11A 75 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.7 V
IS Maximum Body-Diode + Schottky Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 930 1170 1400 pF
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
IC VGS=0V, VDS=15V, f=1MHz
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
CH
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
35 35
10V VDS=5V
30 4.5V 30
3V
25 2.75V 25
20 20
ID (A)
ID(A)
2.5V 125°C
OM
15 15
25°C
10 10
5 VGS=2.25V 5
0 0
0 1 2 3 4 5 1.5 1.8 2.1 2.4 2.7 3
.C
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
14 1.8
1.4
17
10 VGS=4.5V5
1.2 ID=9A
VGS=10V 2
8 10
1
T-
6 0.8
5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
18
SE
25 1.0E+02
ID=11A
1.0E+01 125°C
20 40
1.0E+00
25°C
125°C
Ω)
IP
RDS(ON) (mΩ
1.0E-01
IS (A)
15
1.0E-02
10 1.0E-03
25°C 1.0E-04
CH
5 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 1500
VDS=15V
ID=11A
8 1200
Ciss
Capacitance (pF)
VGS (Volts)
6 900
OM
4 600
Coss
2 300
Crss
0 0
.C
0 5 10 15 20 25 0 5 10 V (Volts)
15 20 25 30
DS
Qg (nC) Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0 1000
TA=25°C
10µs
RDS(ON)
10.0 limited IC
100µs
Power (W)
100
ID (Amps)
1.0 1ms
10ms 10
0.1 TJ(Max)=150°C DC 10s
T-
TA=25°C
0.0
1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
Figure 9: Maximum Forward Biased
to-Ambient (Note F)
Safe Operating Area (Note F)
SE
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient
1 RθJA=90°C/W
IP
0.1
0.01 PD
Ton
T
CH
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1.E-01 0.9
20A
0.8 10A
1.E-02 0.7
VDS=30V 0.6
VSD (V)
0.5
IR (A)
1.E-03
OM
0.4 5A
VDS=15V 0.3
1.E-04 0.2 IS=1A
0.1
1.E-05 0
.C
0 50
100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs. Figure 13: Diode Forward voltage vs. Junction
Junction Temperature Temperature
12 12 8 3
di/dt=800A/µs di/dt=800A/µs
10
8
125ºC IC 10
8
6
125ºC
25ºC
2.5
2
Qrr (nC)
25ºC
trr (ns)
Irm (A)
trr
6 6 4 1.5
S
Qrr
4 4 125ºC 1
125ºC
Irm 2 S
T-
2 2 0.5
25ºC 25ºC
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 14: Diode Reverse Recovery Charge and Peak Figure 15: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current
SE
10 10
12 3
Is=20A
125ºC Is=20A
8 8 10 2.5
125ºC
40
6 Qrr 25ºC 6 8 2
Qrr (nC)
Irm (A)
trr (ns)
IP
25ºC
6 1.5
S
trr
4 4
125ºC 4 125ºC 1
S
2 2
Irm 2 0.5
25ºC 25ºC
0 0 0 0
CH
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 16: Diode Reverse Recovery Charge and Peak Figure 17: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt
OM
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 40 A
VGS=10V, ID=8A 15.5 19
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 21 25
VGS=4.5V, ID=4A 18.6 23 mΩ
.C
gFS Forward Transconductance VDS=5V, ID=8A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 600 740 888 pF
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
IC VGS=0V, VDS=15V, f=1MHz
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
CH
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 30
10V VDS=5V
4V
25 3.5V 25
5V
20 20
ID(A)
ID (A)
3V
15 15
OM
10 10
125°C
VGS=2.5V 5
5 25°C
0 0
1 1.5 2 2.5 3 3.5 4
.C
0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
30 1.6
VGS=4.5V
17
20 1.2 5
VGS=4.5V
ID=4A
2
15 1
10
T-
VGS=10V
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate 0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E) 18
SE
40 1.0E+02
ID=8A
35 1.0E+01
40
1.0E+00
30
Ω)
IP
RDS(ON) (mΩ
1.0E-01 125°C
-IS (A)
25
125°C
1.0E-02
20
1.0E-03 25°C
15
25°C 1.0E-04
CH
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 1200
VDS=15V
ID=8A
1000
8
Ciss
Capacitance (pF)
800
VGS (Volts)
6
600
OM
4
400
Coss
2 200
Crss
0 0
.C
0 3 6 g (nC) 9 12 15 0 5 10 15 20 25 30
Q VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 1000
TA=25°C
10µs
10.0 RDS(ON) IC100µs 100
-ID (Amps)
Power (W)
1.0 1ms
10ms
10
0.1 TJ(Max)=150°C 10s
DC
T-
TA=25°C
0.0
1
0.01 0.1 1 10 100
0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note F) to-Ambient (Note F)
SE
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1
RθJA=90°C/W
IP
0.1
0.01
PD
Ton
0.001 T
CH
OM
VDC
DUT -
Vgs
Ig
Charge
.C
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
IC
Rg - 10%
ton toff
T-
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L 2
Vds E AR = 1/2 LIAR BVDSS
Id Vds
+ Vdd
SE
Vgs
Vgs VDC
I AR
Rg - Id
DUT
Vgs Vgs
IP
Vds + Q rr = - Idt
DUT
Vgs
CH
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds