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Keywords: Airborne molecular contamination (AMC) is one of the main causes of chip products defects during
FOUP, ME manufacturing. The downward moist air flow originated from the fan filter unit (FFU) inside the mini-
AMCs environment (ME) can penetrate into the front opening unified pod (FOUP) and cause wafer defects. Purging
RH
nitrogen or clean dry air (CDA) are two common techniques used to minimize the relative humidity (RH) level
CFD
inside the FOUP. This computational fluid dynamics (CFD) study compares purge performance of CDA and ni
LES
Nitrogen purge trogen when the FOUP door is open. The RH contours and moist air stream line were simulated inside the FOUP
CDA purge during purge. The FFU velocity, purging devices flow rate and temperature are kept constant during the simu
lation. An innovative large eddy simulation (LES) model was performed with the assistance of a small mesh size
to simulate accurately the flow behavior inside the FOUP and ME. The results show that purging the FOUP with
either CDA or nitrogen can significantly decrease the RH level to below 5% (RH < 5%). However, the FOUP
purge with nitrogen is preferred due to the higher moisture removal efficiency. The CFD simulation results are
verified by RH measurements with SHT-35 sensor inside the FOUP under the same processing conditions.
1. Introduction demand in terms of cleanliness level. FOUPs transport the wafers from
one mini-environment (ME) to another during manufacturing. Due to
In recent years, the rapid development of semiconductor the fact that the FOUP is susceptible to pollutants, especially at the step
manufacturing technology induced by the growing demand for elec when it is attached to the ME and the door is open [2], several methods
tronic devices has resulted in a dramatic reduction of the semiconductor related to FOUP environment protection have been investigated, such as
feature size. One critical factor in achieving nanoscale manufacturing wet cleaning, air curtain protection, and gas purging [5–7]. However,
with high yield rates is providing an ultra-clean working environment gas purging proposed in early 2000′ s [8] has gained exceptional atten
[1], in which pollutants like solid particles and airborne molecular tion, numerous investigations and improvements related to this tech
contamination (AMC), such as oxygen, hydrogen fluoride, and moisture, nology have been proposed in the following years. González-Aguirre
should be maintained at a lowest level as possible to prevent the et al. [6] compared the performance of the wet cleaning and gas purge
corrosion effect on the silicon wafer surface [2, 3]. Compared with the method. It is reported that compared with wet cleaning, the key
particles that filters can efficiently remove, AMC is significantly harder parameter to maintain the FOUP’s cleanliness is to provide continuous
to control because of the physical characteristics of the molecular or purging gas into the FOUP. Wang et al. [9] made an experimental study
atom-scale species and chemical characteristics of gas-phase contami on nitrogen purging of the FOUP’s open door case. The result shows gas
nants [4]. purging can efficiently decrease the moisture level to below 10% in 60 s
Since the front opening unified pod (FOUP or wafer box) is the main and maintains a constant moisture level at 3% for over two minutes.
wafer storage device during the manufacturing process, it has a rigorous Chiu et al. [10] further investigated an innovative purging method,
* Corresponding author at: Department of Energy and Refrigerating Air-Conditioning Engineering, National Taipei University of Technology, No. 1, Section 3,
Zhongxiao East Road, Da’an District, Taipei City, 106.
E-mail address: ozargar@ntut.edu.tw (O.A. Zargar).
1
Equal contribution.
https://doi.org/10.1016/j.ijft.2022.100198
Received 9 July 2022; Received in revised form 22 August 2022; Accepted 23 August 2022
Available online 28 August 2022
2666-2027/© 2022 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-
nc-nd/4.0/).
D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
of CDA.
Finally, it can be inferred that both CDA and nitrogen are good
candidates for protecting the inside of the FOUP from contamination,
however, the effectiveness of both gases is still under investigation.
Therefore, this study directly compares the use of CDA and nitrogen as
purging gas. Each set of the simulation is conducted under an identical
testing condition, with the purging gas acting as the only variable. The
Fig. 1. Computational domain for both purging gases (Nitrogen and CDA).
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 4. CFD results of the simulated streamline flow patterns and RH contours per percent in FOUP median plane during (a) CDA purge and (b) Nitrogen purge. Purge
flow rate = 200 LPM.
study aims to identify the best purging gas for the FOUP’s environmental purge efficiency of both gases, CDA and nitrogen (N2) is investigated at
protection. Previous studies investigated the FOUP moisture removal the same purge flow rates. This could be helpful for the semiconductor
efficiency of the purging gases CDA or nitrogen (N2) independently. For manufacturing industry to reduce the rate of product defects and energy
example, Wang et al. [9] and Hu et al. [11] focused on the efficiency of consumption.
the nitrogen purge technique, while Lin et al. [12] and Hu et al. [13]
focused on the efficiency of the CDA purge technique. In this study the
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 6. CFD results of the simulated streamline flow patterns and RH contours
per percent in FOUP right diffuser plane during (a) CDA purge and (b) Nitrogen
purge. Purge flow rate = 200 LPM.
2. Methodology
Fig. 5. CFD 3D results of the simulated RH contours per percent in FOUP and ∇⋅u = 0
ME median plane during (a) CDA purge and (b) Nitrogen purge. Purge flow
rate = 200 LPM. 1
ut − Δu + ∇⋅(uu) + ∇⋅τ + ∇p = 0
Re
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 8. CFD results of the simulated streamline flow patterns and RH contours
per percent in FOUP left diffuser plane during (a) CDA purge and (b) Nitrogen
purge. Purge flow rate = 200 LPM.
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
and bottom edges shown in Fig. 2. The designated FOUP has a complex
geometry in terms of curved shape and several steps along its cross
section in contrast with the ME simple geometry. As the FOUP is the
critical zone, the whole domain gets a mesh refinement. The ME must be
locally refined especially in the interface zone and the wall that co
incides with the FOUP. A previous study tested different grids for the
same application stating a range from 2.5 to 20 mm [17]. It determines
the subsequent element size: (1) FOUP & interface ≤ 5 mm and (2) ME
≤ 10 mm.
Turbulent fluid flow is usually characterized by a turbulent inter
mediate length scale commonly called the Taylor microscale that defines
how generated eddies are affected by fluid viscosity and turbulence.
Then, mesh size for the FOUP and interface region have to be deter
mined according to the Taylor microscale correlations, which states to
have at least 5 – 10 cells per integral scale (λ) to obtain an appropriate
turbulent flow behavior. The projected Taylor microscale value is
around λ = 15.65 mm setting a size element range from 1.5 to 3 mm.
Therefore, the overall size for the FOUP is 1.75 mm and the interface
zone adopts the lowest value from the scale to assure the inflation layer
elements maintain an acceptable aspect ratio. Fig. 3 presents the mesh
for the two critical zones of the study. The initial value for the closest
zone to the interface is set to 3 mm and the farthest area is set to 10 mm,
this increasing mesh size reduces the number of cells from non-critical
parts for the study. LES model also requires a proper time step (Δt) to
solve the flow field of unsteady calculations to achieve the turbulent
behavior and vortices in both FOUP and interface region. The way to
calculate the time step follows a relationship that involves mesh size and
the FFU airflow velocity. The most suitable time step is 0.01 and the time
is 7 min, which is a suitable period of time to let both deployed gases
enter in a stabilization zone and meet favorable conditions for the sys
tem. After the system stabilizes, purging effectiveness and humidity
level trends can be analyzed. Meshing stats are: (1) cells: 22,779,566 and
(2) nodes: 11,016,851.
The Taylor microscale or Turbulent Length Scale is used to charac
terize and simulate a turbulent fluid flow inside the FOUP and ME. This
is an intermediate length scale method that can define how much fluid
viscosity will affect the dynamics of turbulent eddies created inside the
FOUP and ME. The mesh size must be calculated for specific zones such
as FOUP, diffuser, and ME that can be influenced by the turbulent
eddies. For this present study, the cavity mesh related to the FOUP
should follow the Taylor microscale correlations shown below.
RMSVel. fluctuations × LengthT × ρ
Re =
u
Where the Re is Reynolds number,ρ is the fluid’s density [kg/m3],
RMSVel.fluctuations is the root mean square of velocity fluctuations [m/s],u
is the fluid’s dynamic viscosity [kg/m.s], and the LengthT is the size of
the target to be simulated such as FOUP, diffuser or ME [m]. then the λ
that is the Taylor microscale mesh size [m] can be calculated by:
√̅̅̅̅̅̅
10
λ= × LengthT
Re
This present study requires 5–10 grid cells per integral scale that can
be obtain a proper LES content. Therefore, the mesh size should be be
tween the following range in order to assure an accurate representation
Fig. 9. CFD 3D results of the simulated RH contours per percent in FOUP and of the flow pattern inside the FOUP and ME.
ME left diffuser plane during (a) CDA purge and (b) Nitrogen purge. Purge flow
rate = 200 LPM. λ
< mesh size <
λ
10 5
2.2. Meshing In order to simulate precisely the vortices generated inside the FOUP
and ME it is necessary to calculate the correct transient time. The rela
Although the control volume is a two-part assembly, the meshing tionship between the mesh size and the airflow velocity is known as time
procedure needs to focus in three important zones: (1) FOUP, (2) ME and step size and can be calculated with the following formula.
(3) the interface zone between the FOUP-ME system where fluid mixing
mesh size [m]
takes place. The interface zone is located in the FOUP’s door and the Δtstep size [s] = [ ]
velocity ms
surrounding areas along the door’s perimeter, especially in both upper
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 10. CFD results related to the trend of FOUP RH level during purge. The blue graph shows the trend of CDA purge and the red graph shows the trend of ni
trogen purge.
of the FOUP shown in Figs 1 and 2. FFU injects humid airflow into the
control volume from the ceiling and both flows (FFU & purging gas)
leave the control volume from the outlet. The approximate area of the
diffusers is about 0.02 m2 while FFU and outlet area is 0.38 m2 for each
zone. Table 1 summarizes the boundary conditions information for all
related zones and domain constant values.
LES model preselects some spatial discretization aspects; others are
set as second order upwind. A key point of the simulation is to define the
FOUP’s zone with zero water vapor species to match the close door case
conditions [18].
Fig. 4(a) and (b) show CFD results of the simulated stream line flow
patterns and RH contours per percent in FOUP median plane during
purge of CDA and nitrogen respectively. Fig. 5 shows a 3D presentation
of the corresponding RH contours of Fig. 4 in the FOUP and ME. The
purge flow rate was set to 200 LPM for both CDA and nitrogen, to
provide a high level of purge cleaning performance as per the findings of
previous studies [19] and [20]. When the purge gas is CDA the moist air
Fig. 11. The schematic of the RH measurement inside the FOUP. can slightly penetrate into the FOUP just in a small area in the top – 0.1
< x < 0, and 0.26 < z < 0.3. However, when the purge gas is nitrogen the
moist air can slightly penetrate into the FOUP in a large area at the
2.3. Numerical solving conditions bottom – 0.26 <x < 0, and 0 < z < 0.1. Monitoring the RH contours
colors in Figs. 3 and 4 shows that the purge performance of CDA is much
First, it is not necessary to include any cleanroom influence due to better than the purge performance of nitrogen in the FOUP median
the FOUP-ME system is isolated from the cleanroom core. The control plane.
volume geometry presented in Fig. 1 remains the same for both cases: Fig. 6(a) and (b). show CFD results of the simulated stream line flow
(1) CDA and (2) N2. LES is aforementioned as the viscous model for this patterns and RH contours per percent in FOUP right diffuser plane
study with SIMPLE scheme. The energy equation is enable to let the during purge of CDA and nitrogen respectively. Fig. 7 shows a 3D pre
fluids adopt incompressible-ideal-gas properties such as density. Tem sentation of the corresponding RH contours of Fig 6 in the FOUP and ME.
perature is constant in every point of the domain. Purging gases are The purge flow rate was set to 200 LPM for both CDA and nitrogen to
spread at a constant flow rate from both diffusers located in the rear zone provide high level of purge cleaning performance as per the findings of
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 12. RH values related to the CDA purge with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot number 1.
Fig. 13. RH values related to the CDA purge with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot number 13.
previous studies [19] and [20]. When the purge gas is CDA the moist air during purge. The blue and red graph shows the trend of CDA purge and
can slightly penetrate into the FOUP in a very large area 0 < x < 0.3, and nitrogen purge respectively. At the beginning of the measurement when
0 < z < 0.3. However, when the purge gas is nitrogen the moist air can the time is set to zero the FOUP door is opening. Zero RH was observed
slightly penetrate into the FOUP in a smaller area at the bottom 0 < x < at this moment (t = 0) for both CDA and nitrogen purge due to the
0.3, and 0 < z < 0.1. previous close door case dehumidification process. The measurements at
Fig. 8(a) and (b) show CFD results of the simulated stream line flow the period of 0 < t < 90 s is not considered because the purge process is
patterns and RH contours per percent in FOUP left diffuser plane during not yet stabilized. When the 90 < t < 420 s the average RH for nitrogen
purge of CDA and nitrogen respectively. Fig. 9 shows a 3D presentation and CDA are 3.59% and 4.91% (shown by the green and gray horizontal
of the corresponding RH contours of Fig 8 in the FOUP and ME. The lines respectively). This phenomenon shows that the nitrogen purge
purge flow rate was set to 200 LPM for both CDA and nitrogen to provide could be considerably more effective than the CDA purge. By consid
high level of purge cleaning performance as per the findings of previous ering 5% as an allowable RH level inside the FOUP [19], the results of
studies [19] and [20]. When the purge gas is CDA the moist air can the present study shown in Fig. 10 shows that even though both CDA and
slightly penetrate into the FOUP in a very large area 0 < x < 0.3, and 0 < nitrogen purge are effective, the efficiency of the nitrogen purge is much
z < 0.3. However, when the purge gas is nitrogen the moist air can higher than the efficiency of the CDA purge (up to 27%). The findings of
slightly penetrate into the FOUP in a smaller area at the bottom 0 < x < this study could be beneficial for semiconductor manufacturing to
0.3, and 0 < z < 0.1. Monitoring the RH contours colors in Figs. 5–8 reduce the defect rates in products.
shows that the purge performance of nitrogen is better than the purge
performance of CDA in the plane of the FOUP left and right diffusers.
Fig. 10 shows the CFD results related to the trend of FOUP RH level
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 14. RH values related to the CDA purge with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot number 25.
Fig. 15. RH values related to the Nitrogen (N2) purge with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot number 1.
Fig. 16. RH values related to the nitrogen (N2) purge with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot number 13.
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D. Benalcazar et al. International Journal of Thermofluids 16 (2022) 100198
Fig. 17. RH values related to the Nitrogen (N2) purge with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot number 25.
4. Validation and verification planes. The CFD results shows that the CDA purge has better perfor
mance in the FOUP median plan. In addition, the nitrogen purge has
To validate and verify the CFD simulation results presented in Fig 10 significantly higher efficiency in the plane of left and right diffusers. The
and analyzed by flow patterns presented in Figs. 4–9, RH data was overall purge efficiency of nitrogen was observed much higher than the
collected using 15 SHT-35 RH sensors located in slots 1, 13 and 15 of the CDA. Comparing the average RH data shows that even though both CDA
FOUP (as shown in Fig. 11). The elapsed time was set to 960 s. At 0 < t < and nitrogen deliver the acceptable level of average RH inside the FOUP
600 s, the FOUP door was closed. The door was open at 600 s < t < 960 s. (RH < 5%), the efficiency of nitrogen purge could be up to 27% higher
Figs. 12–14 show the RH values related to the CDA purge with a than the performance of the CDA purge. The findings of the CFD simu
purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at slot lation were verified experimentally by RH measurements at different
number 1, 13, and 25, respectively. The y-axis represents the% RH locations inside the FOUP. Those findings could be extremely beneficial
values while elapsed time is shown on the x-axis. Different colors show to reduce the defect rates and increase product quality in semiconductor
the location of the RH sensor within the FOUP. C means center of the manufacturing industries.
FOUP, F means front of the FOUP, B means back of the FOUP, R means
right side of the FOUP, and L means left of the FOUP.
Figs. 15–17 show the RH values related to the Nitrogen (N2) purge Declaration of Competing Interest
with a purge flow rate of 200 LPM and FFU face velocity of 0.5 m/s at
slot number 1, 13, and 25 respectively. The y-axis represents the% RH The authors declare that the present work have no conflict of
values while elapsed time is shown on the x-axis. Different colors show interest.
the location of the RH sensor within the FOUP. C means center of the
FOUP, F means front of the FOUP, B means back of the FOUP, R means References
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