TM

BTA216-600E
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

Passivated high commutation triacs in a plastic envelope intended for use in circuits where
high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the
full rated ms current at the maximum rated junction temperature without the aid of a snubber.

Symbol Simplified outline

Applications:
T2 T1
Motor control
Industrial and domestic lighting
G 12 Heating
3
TO-220 Static switching
Pin Description
1 Main terminal 1 (T1)
Features
2 Main terminal 2 (T2) Blocking voltage to 600 V
3 gate (G) On-state RMS current to 16 A

TAB Main terminal 2 (T2)

SYMBOL PARAMETER Value Unit

V DRM Repetitive peak off-state voltages 600 V

IT RMS RMS on-state current 16 A

I TSM Non-repetitive peak on-state current 140 A

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

R thj-mb Thermal resistance full cycle - - 1.2 K/W

Junction to mounting base half cycle - - 1.7 K/W

Thermal resistance in free air - 60 - K/W

R th j-a Junction to ambient

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 TM
BTA216-600E
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Limiting values in accordance with the Maximum system(IEC 134)

SYMBOL PARAMETER CONDITIONS MIN Value UNIT
Repetitive peak off-state - 600
V DRM V
voltages
I T(RMS) RMS on-state current Full sine wave;T mb 99 C
o
- 16 A
o
Non repetitive surge Full sine wave;Tj=25 C - 140
I TSM peak on-statecurrent prior to surge t=20ms A
t=16.7ms - 150 A
I 2t 2
I t for fusing T p=10ms - 98 A 2S
Repetitive rate of
I TM=20A;I G=0.2A ;
dI T/dt
rise of on-state current - 100 A/ s
after triggering dI G/dt=0.2A/ s
I GM Peak gate current - 2 A
P GM Peak gate power - 5 W
P G(AV) Average gate power Over any 20 ms period - 0.5 W
T stg Storage temperature
range -40 150

Operating junction
Tj Temperature range
-40 125

O
T J=25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Static characteristics
I GT Gate trigger current
2
V D=12V; I T=0.1A
T2+G+ - - 10 mA
T2+G- - - 10 mA
T2-G- - - 10 mA

IL Latching current V D=12V; I GT=0.1A - -

T2+G+ 25 mA
T2+G- - - 30 mA
T2-G- - - 30 mA

IH Holding current V D=12V; I GT=0.1A - - 25 mA

VT On-state voltage I T=20A - - 1.5 V
Gate trigger voltage V D=12V; I T=0.1A - - 1.5
V GT V D=400V; I T=0.1A;T J=125 0.25 - -
V

ID Off-state leakage current V D=V DRM(max); T J=125 - - 0.5 mA

Dynamic Characteristics

dV D/dt Critical rate of rise of V DM=67% V DRM(max);T J=110 60 - - V/ s

off-state voltage exponential waveform;gate open circuit
Critical rate of change of V DM=400 V;T J=125 I T(RMS)=16A - -
dI com/dt commutating current 6.2 A/ms
dV com/dt=10 V/ s; gate open circuit
Critical rate of change of V DM=400 V;T J=125 I T(RMS)=16A - -
dI com/dt commutating current 20 A/ms
dV com/dt=10 V/ s; gate open circuit

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 TM
BTA216-600E
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

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 TM
BTA216-600E
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

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 TM
BTA216-600E
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

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