BT134 series

GENERAL DESCRIPTION
SYMBOL SOT82
Glass passivated triacs in a plastic TO-126
envelope, intended for use in
applications requiring high
bidirectional transient and blocking
voltage capability and high thermal T2 T1
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
G

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. MAX. MAX. UNIT
BT134- 500 600 800
BT134- 500F 600F 800F
BT134- 500G 600G 800G
V DRM Repetitive peak off-state 500 600 800 V
voltages
IT(RMS) RMS on-state current 4 4 4 A
ITSM Non-repetitive peak on-state 25 25 25 A
current

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

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 BT134 series

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Rth j-a Thermal resistance in free air - 100 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
VT On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134- ... ...F ...G
dVD/dt Critical rate of rise of VDM =67% VDRM(max); 100 50 200 250 - V/µs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/µs
commutating voltage IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); - - - 2 - µs
time IG = 0.1 A;
dIG/dt = 5 A/µs;

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 BT134 series

Ptot / W BT136 Tmb(max) / C IT(RMS) / A BT136

8 101 5

7 104 107 C
= 180 4
6 1
107
120
5 110 3
90
60
4 113
30
3 116 2

2 119
1
1 122

0 125 0
0 1 2 3 4 5 -50 0 50 100 150
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.

ITSM / A BT136 IT(RMS) / A BT136

1000 12

IT ITSM
10
T time
8
Tj initial = 25 C max

100 6
dIT /dt limit
4
T2- G+ quadrant

10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 107˚C.

ITSM / A BT136 VGT(Tj)

30 VGT(25 C) BT136
1.6
IT I TSM
25
1.4
T time
20 Tj initial = 25 C max 1.2

15
1

10 0.8

5 0.6

0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

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 BT134 series

IGT(Tj) IT / A BT136
IGT(25 C) BT136 12
3 Tj = 125 C
T2+ G+ Tj = 25 C typ max
T2+ G- 10
2.5 Vo = 1.27 V
T2- G- Rs = 0.091 ohms
T2- G+ 8
2

1.5 6

1 4

0.5 2

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT136

IL(25 C) 10
TRIAC
3 unidirectional

2.5 bidirectional
1
2

1.5

0.1 P tp
D
1

0.5 t

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dVcom/dt (V/us)

1000
IH(25C) TRIAC
3
off-state dV/dt limit
BT134...G SERIES
2.5
BT134 SERIES
100 BT134...F SERIES
2

1.5

1 10

0.5 dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4

A/ms
0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

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