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Absorption, Scattering
and Diffraction
David Attwood
(http://www.coe.berkeley.edu/AST/srms)
X-Ray Interaction with Matter: Absorption, Scattering and Diffraction, EE290F, 18 Jan 2007
Basic Ionization and Emission
Processes in Isolated Atoms
(a) Electron collision induced ionization (b) Photoionization
Scattered
primary Photoelectron
′)
electron (Ep (E = ω – EB)
Primary e– e–
electron Photon
(Ep) e– e– (ω)
+Ze +Ze
K Secondary K
L electron (Es) L
M M
e–
ω KLL Auger
electron
+Ze +Ze
K K
L L
M M
www.cxro.LBL.gov
1.0
0.9
Fluorescence and Auger yields K-shell
0.8
K-shell fluorescence
0.7 Auger L3-subshell
0.6 Auger
0.5
0.4
0.3
L3-subshell
0.2 fluorescence
0.1
0
0 20 40 60 80 100
Atomic number
(a) 4 (c)
3 Al
100
2
Mean free path (nm)
0 10
(b) 4
3 Au
2 1
0 0 0.1
10 101 102 103 104 1 10 100 1000
Energy above Fermi level (eV)
Intensity
Photon energy (eV)
(c) (d) 100
na Cu atom
σabs Distance, x
Mb 10
atom
Ι0 Ι(x) 3p 3d
ω ω 1
2p
3s
0.1 4s
2s I = e–naσabsx
x I0
0.01
10 100 1000
Photon energy (eV)
mZ 2 e 4 1
En = (1.4)
32π 2 20 2 n 2
4π0 2
rn = · n2 (1.5)
me 2 Z
me 4 1 – 1 Z2
ω = Ei – Ef = (1.6)
32π 2 0 2 n f2 n 2i
13.6 eV
a0n2
rn = ; a0 = 0.529 Å (1.9)
Z
2 2 ∂Ψ(r, t)
– ∇ Ψ(r, t) + V(r, t)Ψ(r, t) = i (1.10)
2m ∂t
Probability
Lower state
Time
Upper state
0
Time
20
1s
10
2s
5 3p
3s
3 2 5/2 MV 3d5/2 .
3 2 3/2 MIV 3d3/2 .
3 1 3/2 M MIII 3p3/2 EM3, abs = 75 eV
3 1 1/2 MII 3p1/2 .
3 0 1/2 MI 3s EM1, abs = 123 eV
Lα1 Lα2 Lβ2
λ λ
(c) Diffraction by an ordered array of atoms, (d) Diffraction from a well-defined geometric
as in a crystal structure, such as a pinhole
λ
λ D
θ θ null
d
θ
θ null = 1.22λ
d
mλ = 2d sinθ
λ
λ
θ<θ c
n = 1–δ+iβ
n=1 n = 1–δ+iβ
Maxwell’s equations:
(2.1)
(2.2)
(2.3)
(2.4)
(2.5)
(2.6)
(3.1)
n = 1– δ + β
n=1
λ
λ
Wave Equation
) (in
uum am
v ac r 2) (C
ha
ate
ria
(in apte pte l)
h r3
(C )
Radiation by a single electron (“dipole Refractive index with many atoms
radiation”) present
Scattering cross-sections Role of forward scattering
Scattering by a free electron (“Thomson Contributions to refractive index by
scattering”) bound electrons
Scattering by a single bound electron Refractive index for soft x-rays and EUV
(“Rayleigh scattering”) n = 1 – δ + iβ (δ, β << 1)
Scattering by a multi-electron atom
f0′ f0′′
Atomic “scattering factors”, f0′ and f0′′
Determining f0′ and f0′′ ; measurements
and Kramers-Kronig
Total external reflection
Reflectivity vs. angle
Brewster’s angle
Professor David Attwood
Univ. California, Berkeley X-Ray Interaction with Matter: Absorption, Scattering and Diffraction, EE290F, 18 Jan 2007 Ch02_Eqs_1VG.ai
Atomic Scattering Factors
for Silicon (Z = 14)
103 f20
1 10–1
10
10–1 10–2
10 100 1000 10000 10 100 1000 10000
E (eV) E (eV)
Edge Energies: K 1838.9 eV L1 149.7 eV
L2 99.8 eV
L3 99.2 eV
mλ = 2d sinθ
ne
Mo
Si
Mo
d Si
Mo
Si
Mo
Si
θ
λ
For normal incidence, θ = π/2, first order (m = 1) reflection
λ = 2d
d = λ/2
if the two layers are approximately equal
∆t λ/4
a quarter-wave plate coating.
Mo/Si
0.8
Mo/B4C/Si
0.7
70% at 13.5 nm
0.6 FWHM = 0.55 nm
50 bilayers
0.5
Reflectivity
0.4
0.3
0.2
0.1
0.0
12.0 12.5 13.0 13.5 14.0 14.5
Wavelength (nm)
ˇ Bajt, LLNL.
Courtesy of Sasa
Extreme Ultraviolet Lithography
mλ = 2d sinθ
mλ
The path difference of
radiation “reflecting”
θ θ off sequential planes
must be equal to an
interger number of
θ d wavelengths.
From A.H. Compton and S.K. Allison, X-Rays in Theory and Experiment (D.Van Nostrand, New York, 1926), p.29.
Also see M. Siegbahn, The Spectroscopy of X-Rays (Oxford University Press, London, 1925), p.16.
θ θ
θ θ
d
ds
inθ
inθ
ds
θ θ
λ d
θ θ
R.B. Leighton, Principles of Modern Physics (McGraw-Hill, New York, 1959), p. 456.
Primitive vectors:
z a = ai, b = aj, c = ak
Coordinates of atoms
4 8 within unit cell:
1: (0,0,0)
Crystal a(Å) 2: (0,0,a/2)
Rocksalt Na Cl 5.64 3: (a/2,0,a/2)
Sylvine K Cl 6.28 2 4: (a/2,0,a)
Ag Cl 5.54 3 7 5: (a/2,a/2,0)
6 6: (a/2,a/2,a/2)
Mg O 4.20 a
Galena Pb S 5.97 7: (0,a/2,a/2)
Pb Se 6.14 d 1 8: (0,a/2,a)
Pb Te 6.34 y
5
x Nearest neighbor
distance d = a/2
From R.B. Leighton, Principles of Modern Physics (McGraw-Hill, New York, 1959), section 12.4.